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Sequentielle lithographische verfahren zur reduktion von stapelfehler-nukleierungsstellen und strukturen mit verringerten stapelfehler-nukleierungsstellen
Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device
Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure
Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device