JP2005303053A5 - - Google Patents

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Publication number
JP2005303053A5
JP2005303053A5 JP2004117894A JP2004117894A JP2005303053A5 JP 2005303053 A5 JP2005303053 A5 JP 2005303053A5 JP 2004117894 A JP2004117894 A JP 2004117894A JP 2004117894 A JP2004117894 A JP 2004117894A JP 2005303053 A5 JP2005303053 A5 JP 2005303053A5
Authority
JP
Japan
Prior art keywords
plasma processing
processing apparatus
ring
coil
insulating component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004117894A
Other languages
English (en)
Japanese (ja)
Other versions
JP4657620B2 (ja
JP2005303053A (ja
Filing date
Publication date
Priority claimed from JP2004117894A external-priority patent/JP4657620B2/ja
Priority to JP2004117894A priority Critical patent/JP4657620B2/ja
Application filed filed Critical
Priority to US10/921,341 priority patent/US20050224182A1/en
Publication of JP2005303053A publication Critical patent/JP2005303053A/ja
Publication of JP2005303053A5 publication Critical patent/JP2005303053A5/ja
Priority to US12/567,137 priority patent/US7744721B2/en
Priority to US12/783,686 priority patent/US8231759B2/en
Publication of JP4657620B2 publication Critical patent/JP4657620B2/ja
Application granted granted Critical
Priority to US13/545,422 priority patent/US20120273136A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004117894A 2004-04-13 2004-04-13 プラズマ処理装置 Expired - Fee Related JP4657620B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004117894A JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置
US10/921,341 US20050224182A1 (en) 2004-04-13 2004-08-19 Plasma processing apparatus
US12/567,137 US7744721B2 (en) 2004-04-13 2009-09-25 Plasma processing apparatus
US12/783,686 US8231759B2 (en) 2004-04-13 2010-05-20 Plasma processing apparatus
US13/545,422 US20120273136A1 (en) 2004-04-13 2012-07-10 Plasma Processing Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004117894A JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010238188A Division JP2011040786A (ja) 2010-10-25 2010-10-25 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2005303053A JP2005303053A (ja) 2005-10-27
JP2005303053A5 true JP2005303053A5 (enExample) 2007-04-12
JP4657620B2 JP4657620B2 (ja) 2011-03-23

Family

ID=35059360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004117894A Expired - Fee Related JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置

Country Status (2)

Country Link
US (4) US20050224182A1 (enExample)
JP (1) JP4657620B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8187416B2 (en) * 2005-05-20 2012-05-29 Applied Materials, Inc. Interior antenna for substrate processing chamber
CN101136279B (zh) * 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
JP5561812B2 (ja) * 2006-11-28 2014-07-30 サムコ株式会社 プラズマ処理装置
CN101595768B (zh) * 2007-02-16 2012-07-04 朗姆研究公司 感应线圈、等离子发生装置及等离子发生方法
KR101484341B1 (ko) * 2007-03-05 2015-01-19 산드빅 인터렉츄얼 프로퍼티 에이비 히터 요소 및 전기로용 인서트
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
EP2384098A1 (en) 2009-01-15 2011-11-02 Hitachi High-Technologies Corporation Plasma processing equipment and plasma generation equipment
JP5155235B2 (ja) * 2009-01-15 2013-03-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
WO2011133562A2 (en) * 2010-04-20 2011-10-27 Lam Research Corporation Methods and apparatus for an induction coil arrangement in a plasma processing system
KR20120004040A (ko) * 2010-07-06 2012-01-12 삼성전자주식회사 플라즈마 발생장치
JP5851682B2 (ja) * 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP2013182966A (ja) 2012-03-01 2013-09-12 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
JP5800937B2 (ja) * 2014-03-14 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置
CN107849694B (zh) * 2015-06-15 2020-03-31 应用材料公司 用于改良bcd及蚀刻深度性能的源rf功率分裂式内线圈
CN109887872B (zh) * 2019-03-29 2024-11-15 华南理工大学 用于制备凹槽栅增强型器件的精准刻蚀装置及其刻蚀方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68924413T2 (de) 1989-01-25 1996-05-02 Ibm Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung.
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
TW249313B (enExample) * 1993-03-06 1995-06-11 Tokyo Electron Co
JP3165941B2 (ja) 1993-10-04 2001-05-14 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5753044A (en) 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
JP3424867B2 (ja) * 1994-12-06 2003-07-07 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
US5998933A (en) * 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
JP5204941B2 (ja) * 2000-08-11 2013-06-05 アプライド マテリアルズ インコーポレイテッド 外部から励磁されるトロイダルプラズマチャンバ
KR100404723B1 (ko) * 2001-04-26 2003-11-07 주식회사 플라즈마트 낮은 종횡비를 갖는 유도결합형 플라즈마 발생장치
JP3787079B2 (ja) * 2001-09-11 2006-06-21 株式会社日立製作所 プラズマ処理装置
EP1552727A4 (en) * 2002-07-26 2007-06-06 Plasmart Co Ltd INDUCTIVE-COUPLED PLASMAGENERATOR WITH LOWER SIDE TRIM
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置

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