JP4657620B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4657620B2
JP4657620B2 JP2004117894A JP2004117894A JP4657620B2 JP 4657620 B2 JP4657620 B2 JP 4657620B2 JP 2004117894 A JP2004117894 A JP 2004117894A JP 2004117894 A JP2004117894 A JP 2004117894A JP 4657620 B2 JP4657620 B2 JP 4657620B2
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JP
Japan
Prior art keywords
coil
ring
plasma
plasma processing
processing apparatus
Prior art date
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Expired - Fee Related
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JP2004117894A
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English (en)
Japanese (ja)
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JP2005303053A5 (enExample
JP2005303053A (ja
Inventor
学 枝村
豪 宮
健 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2004117894A priority Critical patent/JP4657620B2/ja
Priority to US10/921,341 priority patent/US20050224182A1/en
Publication of JP2005303053A publication Critical patent/JP2005303053A/ja
Publication of JP2005303053A5 publication Critical patent/JP2005303053A5/ja
Priority to US12/567,137 priority patent/US7744721B2/en
Priority to US12/783,686 priority patent/US8231759B2/en
Application granted granted Critical
Publication of JP4657620B2 publication Critical patent/JP4657620B2/ja
Priority to US13/545,422 priority patent/US20120273136A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2004117894A 2004-04-13 2004-04-13 プラズマ処理装置 Expired - Fee Related JP4657620B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004117894A JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置
US10/921,341 US20050224182A1 (en) 2004-04-13 2004-08-19 Plasma processing apparatus
US12/567,137 US7744721B2 (en) 2004-04-13 2009-09-25 Plasma processing apparatus
US12/783,686 US8231759B2 (en) 2004-04-13 2010-05-20 Plasma processing apparatus
US13/545,422 US20120273136A1 (en) 2004-04-13 2012-07-10 Plasma Processing Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004117894A JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010238188A Division JP2011040786A (ja) 2010-10-25 2010-10-25 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2005303053A JP2005303053A (ja) 2005-10-27
JP2005303053A5 JP2005303053A5 (enExample) 2007-04-12
JP4657620B2 true JP4657620B2 (ja) 2011-03-23

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ID=35059360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004117894A Expired - Fee Related JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置

Country Status (2)

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US (4) US20050224182A1 (enExample)
JP (1) JP4657620B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8187416B2 (en) * 2005-05-20 2012-05-29 Applied Materials, Inc. Interior antenna for substrate processing chamber
CN101136279B (zh) * 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
JP5561812B2 (ja) * 2006-11-28 2014-07-30 サムコ株式会社 プラズマ処理装置
CN101595768B (zh) * 2007-02-16 2012-07-04 朗姆研究公司 感应线圈、等离子发生装置及等离子发生方法
KR101484341B1 (ko) * 2007-03-05 2015-01-19 산드빅 인터렉츄얼 프로퍼티 에이비 히터 요소 및 전기로용 인서트
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
EP2384098A1 (en) 2009-01-15 2011-11-02 Hitachi High-Technologies Corporation Plasma processing equipment and plasma generation equipment
JP5155235B2 (ja) * 2009-01-15 2013-03-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
WO2011133562A2 (en) * 2010-04-20 2011-10-27 Lam Research Corporation Methods and apparatus for an induction coil arrangement in a plasma processing system
KR20120004040A (ko) * 2010-07-06 2012-01-12 삼성전자주식회사 플라즈마 발생장치
JP5851682B2 (ja) * 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP2013182966A (ja) 2012-03-01 2013-09-12 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
JP5800937B2 (ja) * 2014-03-14 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置
CN107849694B (zh) * 2015-06-15 2020-03-31 应用材料公司 用于改良bcd及蚀刻深度性能的源rf功率分裂式内线圈
CN109887872B (zh) * 2019-03-29 2024-11-15 华南理工大学 用于制备凹槽栅增强型器件的精准刻蚀装置及其刻蚀方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68924413T2 (de) 1989-01-25 1996-05-02 Ibm Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung.
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
TW249313B (enExample) * 1993-03-06 1995-06-11 Tokyo Electron Co
JP3165941B2 (ja) 1993-10-04 2001-05-14 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5753044A (en) 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
JP3424867B2 (ja) * 1994-12-06 2003-07-07 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
US5998933A (en) * 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
JP5204941B2 (ja) * 2000-08-11 2013-06-05 アプライド マテリアルズ インコーポレイテッド 外部から励磁されるトロイダルプラズマチャンバ
KR100404723B1 (ko) * 2001-04-26 2003-11-07 주식회사 플라즈마트 낮은 종횡비를 갖는 유도결합형 플라즈마 발생장치
JP3787079B2 (ja) * 2001-09-11 2006-06-21 株式会社日立製作所 プラズマ処理装置
EP1552727A4 (en) * 2002-07-26 2007-06-06 Plasmart Co Ltd INDUCTIVE-COUPLED PLASMAGENERATOR WITH LOWER SIDE TRIM
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
US20100078130A1 (en) 2010-04-01
US20100263796A1 (en) 2010-10-21
US8231759B2 (en) 2012-07-31
US7744721B2 (en) 2010-06-29
JP2005303053A (ja) 2005-10-27
US20120273136A1 (en) 2012-11-01
US20050224182A1 (en) 2005-10-13

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