JP2005285826A - 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 - Google Patents
半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 Download PDFInfo
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- JP2005285826A JP2005285826A JP2004093197A JP2004093197A JP2005285826A JP 2005285826 A JP2005285826 A JP 2005285826A JP 2004093197 A JP2004093197 A JP 2004093197A JP 2004093197 A JP2004093197 A JP 2004093197A JP 2005285826 A JP2005285826 A JP 2005285826A
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- Prior art keywords
- thin film
- semiconductor thin
- region
- phase shifter
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 239000010409 thin film Substances 0.000 title claims abstract description 192
- 239000004065 semiconductor Substances 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000010408 film Substances 0.000 claims abstract description 137
- 239000013078 crystal Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000009826 distribution Methods 0.000 claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 238000002425 crystallisation Methods 0.000 claims description 35
- 230000008025 crystallization Effects 0.000 claims description 32
- 230000009467 reduction Effects 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000002441 reversible effect Effects 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000003252 repetitive effect Effects 0.000 claims description 7
- 230000002829 reductive effect Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims 1
- 239000000382 optic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 description 23
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005224 laser annealing Methods 0.000 description 6
- 230000010363 phase shift Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004093197A JP2005285826A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004093197A JP2005285826A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005285826A true JP2005285826A (ja) | 2005-10-13 |
| JP2005285826A5 JP2005285826A5 (enExample) | 2007-02-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004093197A Abandoned JP2005285826A (ja) | 2004-03-26 | 2004-03-26 | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005285826A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113640907A (zh) * | 2021-08-17 | 2021-11-12 | 燕山大学 | 一种制备薄膜光栅的装置及方法 |
| WO2024031756A1 (zh) * | 2022-08-10 | 2024-02-15 | 武汉华星光电技术有限公司 | 薄膜晶体管及电子器件 |
-
2004
- 2004-03-26 JP JP2004093197A patent/JP2005285826A/ja not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113640907A (zh) * | 2021-08-17 | 2021-11-12 | 燕山大学 | 一种制备薄膜光栅的装置及方法 |
| CN113640907B (zh) * | 2021-08-17 | 2022-10-28 | 燕山大学 | 一种制备薄膜光栅的装置及方法 |
| WO2024031756A1 (zh) * | 2022-08-10 | 2024-02-15 | 武汉华星光电技术有限公司 | 薄膜晶体管及电子器件 |
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