JP2005223337A - 連続側面固相法を利用して単結晶シリコン薄膜を形成する方法 - Google Patents
連続側面固相法を利用して単結晶シリコン薄膜を形成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 116
- 239000010409 thin film Substances 0.000 title claims abstract description 66
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 42
- 238000007711 solidification Methods 0.000 title abstract description 3
- 230000008023 solidification Effects 0.000 title abstract description 3
- 239000013078 crystal Substances 0.000 claims abstract description 78
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000059 patterning Methods 0.000 claims abstract description 4
- 238000002425 crystallisation Methods 0.000 claims description 55
- 230000008025 crystallization Effects 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005452 bending Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 238000001914 filtration Methods 0.000 description 42
- 239000007790 solid phase Substances 0.000 description 37
- 230000008569 process Effects 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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Abstract
【解決手段】 基板上に形成された非晶質シリコン層を結晶化する方法において、結晶の成長が開始される第1領域、粒界のない単結晶が成長される第3領域、および前記第1領域と前記第3領域との間を連結するものであって、前記第1領域で発生した粒界が前記第3領域に到達することを防止するために、前記第1領域および前記第2領域に比べて幅が狭く形成された第2領域とを有するように、前記非晶質シリコン層をパターニングする段階と、前記第1領域上にマスク層を部分的に形成する段階と、前記第1領域から第3領域まで順次に1ステップずつレーザビームを照射することによって、前記非晶質シリコン層を結晶化する段階と、を含むことを特徴とする単結晶シリコン薄膜の形成方法。
【選択図】 図7D
Description
下記の第2実施形態ないし第4実施形態は、このような垂直方向の粒界が無粒界単結晶領域116に到達することを防止するためのものである。
114 粒界フィルタリング領域
116 無粒界単結晶領域
130 反射マスク層
250 副粒界
Claims (20)
- 基板上に形成された非晶質シリコン層を結晶化する方法において、
結晶の成長が開始される第1領域、粒界のない単結晶が成長される第3領域、および前記第1領域と前記第3領域との間を連結するものであって、前記第1領域で発生した粒界が前記第3領域に到達することを防止するために、前記第1領域および前記第2領域に比べて幅が狭く形成された第2領域とを有するように、前記非晶質シリコン層をパターニングする段階と、
前記第1領域上にマスク層を部分的に形成する段階と、
前記第1領域から第3領域まで順次に1ステップずつレーザビームを照射することによって、前記非晶質シリコン層を結晶化する段階と、を含むことを特徴とする単結晶シリコン薄膜の形成方法。 - 前記第3領域の一部分は、前記第2領域に向かって次第に幅が狭くなるようにテーパ状に形成されることを特徴とする請求項1に記載の単結晶シリコン薄膜の形成方法。
- 前記第3領域のテーパ状に形成されない残りの部分は、一定の幅を維持することを特徴とする請求項2に記載の単結晶シリコン薄膜の形成方法。
- 前記マスク層は、レーザビームを反射する材料で形成されることを特徴とする請求項1に記載の単結晶シリコン薄膜の形成方法。
- 前記マスク層は、Alを含む材料で形成されることを特徴とする請求項4に記載の単結晶シリコン薄膜の形成方法。
- 前記マスク層は、頂点を有する形であることを特徴とする請求項4に記載の単結晶シリコン薄膜の形成方法。
- 前記マスク層は、前記第1領域で形成され始めた粒界の方向を斜めに変更できるように、前記第2領域と対向する方向に頂点が位置することを特徴とする請求項6に記載の単結晶シリコン薄膜の形成方法。
- 前記マスク層の頂点は、前記第1領域の幅の中心線上に位置することを特徴とする請求項7に記載の単結晶シリコン薄膜の形成方法。
- 前記マスク層は、前記第1領域の幅中心線を基準に対称となることを特徴とする請求項8に記載の単結晶シリコン薄膜の形成方法。
- 前記レーザビームの幅をbとし、ビーム境界から結晶が成長可能な最大の距離をdC-SLGとするとき、次の数式:
- 前記少なくともテーパ部分におけるレーザビームの1ステップ当りの移動距離は、レーザの移動方向に対するテーパ角度をθとするとき、次の数式:
- 前記第2領域は、前記第1領域の一側の中心からレーザの進行方向に延設されることを特徴とする請求項11に記載の単結晶シリコン薄膜の形成方法。
- 前記第2領域は、所定の角度で少なくとも1回以上屈曲されたことを特徴とする請求項12に記載の単結晶シリコン薄膜の形成方法。
- 前記第2領域は、前記第2領域が所定の角度で屈曲された第1屈曲部と、前記第2領域が前記角度だけ逆方向にもう一度屈曲された第2屈曲部とを有し、前記第1屈曲部は、前記第2屈曲部より前記第1領域に近接していることを特徴とする請求項13に記載の単結晶シリコン薄膜の形成方法。
- 前記マスク層の頂点と前記第1屈曲部の内側の屈曲点とを連結する線分の傾斜度は、前記第1屈曲部の内側の屈曲点と前記第2屈曲部の内側の屈曲点とを連結する線分の傾斜度より大きいことを特徴とする請求項14に記載の単結晶シリコン薄膜の形成方法。
- 前記第1領域の幅は、前記第2領域に近づくほど次第に狭くなることを特徴とする請求項13に記載の単結晶シリコン薄膜の形成方法。
- 前記第2領域は、前記第1領域の一側の中心から所定の距離だけ離れた位置からレーザの進行方向に延設されていることを特徴とする請求項11に記載の単結晶シリコン薄膜の形成方法。
- 前記第1領域と前記第2領域とが接する前記第1領域の面から前記マスク層の頂点までのレーザ進行方向への距離をd、前記第1領域と前記第2領域とが接する前記第1領域の面中心から前記第2領域までのレーザ進行方向に垂直な距離をm、前記第2領域の長さをl、そして前記第2領域の幅をwとするとき、次の数式:
- 前記第1領域に形成される単結晶部分の幅をPとするとき、次の数式:
- 前記非晶質シリコン層を結晶化する段階は、線形ビームSLS方法を利用して行われることを特徴とする請求項1に記載の単結晶シリコン薄膜の形成方法。
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KR1020040008175A KR101045204B1 (ko) | 2004-02-07 | 2004-02-07 | 연속 측방 고상법을 이용하여 단결정 실리콘 박막을형성하는 방법 |
KR2004-008175 | 2004-02-07 |
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JP2005223337A true JP2005223337A (ja) | 2005-08-18 |
JP4689288B2 JP4689288B2 (ja) | 2011-05-25 |
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US (1) | US7238559B2 (ja) |
JP (1) | JP4689288B2 (ja) |
KR (1) | KR101045204B1 (ja) |
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US6792029B2 (en) * | 2002-03-27 | 2004-09-14 | Sharp Laboratories Of America, Inc. | Method of suppressing energy spikes of a partially-coherent beam |
KR100707176B1 (ko) * | 2005-01-13 | 2007-04-13 | 삼성전자주식회사 | 단결정 실리콘으로 구성된 박막 트랜지스터의 채널 영역형성 방법 |
TWI256138B (en) * | 2005-02-01 | 2006-06-01 | Ind Tech Res Inst | Method of fabricating a poly-silicon thin film transistor |
TWI299431B (en) * | 2005-08-23 | 2008-08-01 | Au Optronics Corp | A mask for sequential lateral solidification (sls) process and a method thereof |
KR100713894B1 (ko) * | 2006-03-17 | 2007-05-04 | 비오이 하이디스 테크놀로지 주식회사 | 결정화 패턴 및 이를 이용한 비정질실리콘의 결정화 방법 |
KR102470876B1 (ko) * | 2021-01-28 | 2022-11-25 | 재단법인대구경북과학기술원 | 모놀리식 3차원 소자의 상부층 고결정화 방법 및 이를 통해 제조된 모놀리식 3차원 소자 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03250620A (ja) * | 1990-02-27 | 1991-11-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2001274088A (ja) * | 2001-02-28 | 2001-10-05 | Trustees Of Columbia Univ In The City Of New York | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
JP2002118061A (ja) * | 2000-10-05 | 2002-04-19 | Sharp Corp | 結晶性半導体膜の形成方法および半導体装置並びにディスプレイ装置 |
JP2002329667A (ja) * | 2000-11-11 | 2002-11-15 | Seung Ki Joo | シリコン薄膜結晶化方法および薄膜トランジスタの製造方法 |
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US5817548A (en) * | 1995-11-10 | 1998-10-06 | Sony Corporation | Method for fabricating thin film transistor device |
KR100327087B1 (ko) * | 1999-06-28 | 2002-03-13 | 구본준, 론 위라하디락사 | 레이저 어닐링 방법 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03250620A (ja) * | 1990-02-27 | 1991-11-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2002118061A (ja) * | 2000-10-05 | 2002-04-19 | Sharp Corp | 結晶性半導体膜の形成方法および半導体装置並びにディスプレイ装置 |
JP2002329667A (ja) * | 2000-11-11 | 2002-11-15 | Seung Ki Joo | シリコン薄膜結晶化方法および薄膜トランジスタの製造方法 |
JP2001274088A (ja) * | 2001-02-28 | 2001-10-05 | Trustees Of Columbia Univ In The City Of New York | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
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JP4689288B2 (ja) | 2011-05-25 |
KR101045204B1 (ko) | 2011-06-30 |
US7238559B2 (en) | 2007-07-03 |
US20050176189A1 (en) | 2005-08-11 |
KR20050079861A (ko) | 2005-08-11 |
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