JP2005210083A5 - - Google Patents

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Publication number
JP2005210083A5
JP2005210083A5 JP2004350021A JP2004350021A JP2005210083A5 JP 2005210083 A5 JP2005210083 A5 JP 2005210083A5 JP 2004350021 A JP2004350021 A JP 2004350021A JP 2004350021 A JP2004350021 A JP 2004350021A JP 2005210083 A5 JP2005210083 A5 JP 2005210083A5
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JP
Japan
Prior art keywords
insulating film
opening
film
forming
gate
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Granted
Application number
JP2004350021A
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English (en)
Japanese (ja)
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JP4712361B2 (ja
JP2005210083A (ja
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Publication date
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Priority to JP2004350021A priority Critical patent/JP4712361B2/ja
Priority claimed from JP2004350021A external-priority patent/JP4712361B2/ja
Publication of JP2005210083A publication Critical patent/JP2005210083A/ja
Publication of JP2005210083A5 publication Critical patent/JP2005210083A5/ja
Application granted granted Critical
Publication of JP4712361B2 publication Critical patent/JP4712361B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004350021A 2003-12-02 2004-12-02 薄膜トランジスタの作製方法 Expired - Fee Related JP4712361B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004350021A JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003403666 2003-12-02
JP2003403848 2003-12-02
JP2003403666 2003-12-02
JP2003403848 2003-12-02
JP2004350021A JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2005210083A JP2005210083A (ja) 2005-08-04
JP2005210083A5 true JP2005210083A5 (https=) 2006-10-05
JP4712361B2 JP4712361B2 (ja) 2011-06-29

Family

ID=34916066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004350021A Expired - Fee Related JP4712361B2 (ja) 2003-12-02 2004-12-02 薄膜トランジスタの作製方法

Country Status (1)

Country Link
JP (1) JP4712361B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737442B2 (en) * 2005-06-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4670596B2 (ja) 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP5028900B2 (ja) * 2006-08-01 2012-09-19 カシオ計算機株式会社 発光素子を用いたディスプレイパネルの製造方法
JP4919738B2 (ja) * 2006-08-31 2012-04-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101681578B (zh) * 2007-06-08 2012-04-11 株式会社半导体能源研究所 显示装置
CN102112913B (zh) * 2008-08-27 2013-10-09 夏普株式会社 电极接触构造、具备它的液晶显示装置及电极接触构造制造方法
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
JP6088852B2 (ja) * 2012-03-01 2017-03-01 株式会社半導体エネルギー研究所 半導体装置の作製方法、及び半導体装置
CN105122125B (zh) * 2014-01-16 2018-03-09 华为终端（东莞）有限公司 液晶显示器及液晶显示器检测方法和电子装置
KR102468861B1 (ko) * 2017-12-22 2022-11-18 엘지디스플레이 주식회사 전계발광표시장치
JP6664567B1 (ja) * 2018-04-26 2020-03-13 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスおよびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159174A (ja) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd 液晶表示装置
JP3926076B2 (ja) * 1999-12-24 2007-06-06 日本電気株式会社 薄膜パターン形成方法
US6952036B2 (en) * 2001-02-19 2005-10-04 International Business Machines Corporation Thin-film transistor structure, method for manufacturing the thin-film transistor structure, and display device using the thin-film transistor structure
JP2003318193A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器

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