JP2005191605A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005191605A5 JP2005191605A5 JP2005090415A JP2005090415A JP2005191605A5 JP 2005191605 A5 JP2005191605 A5 JP 2005191605A5 JP 2005090415 A JP2005090415 A JP 2005090415A JP 2005090415 A JP2005090415 A JP 2005090415A JP 2005191605 A5 JP2005191605 A5 JP 2005191605A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- stress
- wiring
- stress relaxation
- external electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 16
- 230000005540 biological transmission Effects 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000002040 relaxant effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005090415A JP4258660B2 (ja) | 1997-01-17 | 2005-03-28 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991597 | 1997-01-17 | ||
| JP2005090415A JP4258660B2 (ja) | 1997-01-17 | 2005-03-28 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53270398A Division JP3811957B2 (ja) | 1997-01-17 | 1998-01-16 | 電子部品及び半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008247471A Division JP2009027185A (ja) | 1997-01-17 | 2008-09-26 | 電子部品および半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005191605A JP2005191605A (ja) | 2005-07-14 |
| JP2005191605A5 true JP2005191605A5 (enExample) | 2007-03-08 |
| JP4258660B2 JP4258660B2 (ja) | 2009-04-30 |
Family
ID=34796884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005090415A Expired - Lifetime JP4258660B2 (ja) | 1997-01-17 | 2005-03-28 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4258660B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW448524B (en) * | 1997-01-17 | 2001-08-01 | Seiko Epson Corp | Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment |
| KR100759309B1 (ko) | 2005-08-08 | 2007-09-17 | 세이코 엡슨 가부시키가이샤 | 반도체 장치 |
| JP4235835B2 (ja) | 2005-08-08 | 2009-03-11 | セイコーエプソン株式会社 | 半導体装置 |
| JP4997848B2 (ja) * | 2006-07-04 | 2012-08-08 | Tdk株式会社 | 電子部品 |
| JP5284125B2 (ja) * | 2009-01-23 | 2013-09-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
2005
- 2005-03-28 JP JP2005090415A patent/JP4258660B2/ja not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2008120705A1 (ja) | 半導体装置 | |
| WO2009002381A3 (en) | Mold compound circuit structure for enhanced electrical and thermal performance | |
| JP2011114192A5 (enExample) | ||
| USD597582S1 (en) | Projector mounting device | |
| WO2007041529A3 (en) | Fuse with cavity forming enclosure | |
| WO2009060670A1 (ja) | 半導体装置及びその製造方法 | |
| JP2010186814A5 (enExample) | ||
| JP2010147281A5 (ja) | 半導体装置 | |
| WO2008103331A3 (en) | Wide-bandgap semiconductor devices | |
| JP2009266979A5 (enExample) | ||
| WO2008099863A1 (ja) | 半導体,半導体装置及び相補型トランジスタ回路装置 | |
| ATE549750T1 (de) | Piezoelektrischer aktuator | |
| ATE515079T1 (de) | Oberflächenmontagekomponente bildender steckverbinder | |
| WO2009131335A3 (ko) | 반도체 발광소자 | |
| WO2009057620A1 (ja) | 圧力センサ及びその製造方法 | |
| WO2007011511A3 (en) | Die package with asymmetric leadframe connection | |
| EP1837906A3 (en) | Semiconductor memory device and methods of manufacturing and operating the same | |
| JP5083261B2 (ja) | 半導体装置及びその製造方法 | |
| JP2005191605A5 (enExample) | ||
| WO2008126696A1 (ja) | 半導体発光装置 | |
| WO2008021219A3 (en) | Semiconductor device having improved heat dissipation capabilities | |
| WO2009004759A1 (ja) | 熱電素子 | |
| USD585394S1 (en) | Groove formed around a semiconductor device on a circuit board | |
| USD580895S1 (en) | Grooves formed around a semiconductor device on a circuit board | |
| USD584249S1 (en) | Grooves formed around a semiconductor device on a circuit board |