JP2005191166A - 投影露光装置及び投影露光方法 - Google Patents
投影露光装置及び投影露光方法 Download PDFInfo
- Publication number
- JP2005191166A JP2005191166A JP2003428758A JP2003428758A JP2005191166A JP 2005191166 A JP2005191166 A JP 2005191166A JP 2003428758 A JP2003428758 A JP 2003428758A JP 2003428758 A JP2003428758 A JP 2003428758A JP 2005191166 A JP2005191166 A JP 2005191166A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- light
- transmittance
- projection exposure
- active gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 70
- 238000002834 transmittance Methods 0.000 claims abstract description 64
- 239000011261 inert gas Substances 0.000 claims abstract description 20
- 238000010926 purge Methods 0.000 claims abstract description 20
- 230000008859 change Effects 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000000356 contaminant Substances 0.000 claims description 19
- 230000007246 mechanism Effects 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052815 sulfur oxide Inorganic materials 0.000 claims description 3
- 238000011109 contamination Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 9
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003428758A JP2005191166A (ja) | 2003-12-25 | 2003-12-25 | 投影露光装置及び投影露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003428758A JP2005191166A (ja) | 2003-12-25 | 2003-12-25 | 投影露光装置及び投影露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005191166A true JP2005191166A (ja) | 2005-07-14 |
| JP2005191166A5 JP2005191166A5 (enExample) | 2006-04-27 |
Family
ID=34787622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003428758A Pending JP2005191166A (ja) | 2003-12-25 | 2003-12-25 | 投影露光装置及び投影露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005191166A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008078642A (ja) * | 2006-08-28 | 2008-04-03 | Interuniv Micro Electronica Centrum Vzw | リソグラフ要素の汚染測定方法およびシステム |
| JP2014207479A (ja) * | 2009-08-07 | 2014-10-30 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| CN114402265A (zh) * | 2019-09-16 | 2022-04-26 | 罗伯特·博世有限公司 | 用于在表面上局部去除和/或更改聚合物材料的方法和设备 |
-
2003
- 2003-12-25 JP JP2003428758A patent/JP2005191166A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008078642A (ja) * | 2006-08-28 | 2008-04-03 | Interuniv Micro Electronica Centrum Vzw | リソグラフ要素の汚染測定方法およびシステム |
| JP2014207479A (ja) * | 2009-08-07 | 2014-10-30 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| JP5618261B2 (ja) * | 2009-08-07 | 2014-11-05 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| CN114402265A (zh) * | 2019-09-16 | 2022-04-26 | 罗伯特·博世有限公司 | 用于在表面上局部去除和/或更改聚合物材料的方法和设备 |
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