JP2005174967A - 半導体素子およびその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
【解決手段】 光電変換部2が形成された半導体基板1上に第1透明膜10を形成し、その上に第1透明膜10よりも屈折率が高い第2透明膜をスパッタリング法により成膜して、光電変換部2上方において第2透明膜の上下面の少なくとも一方に凸部を形成して層内レンズ11を構成する。第2透明膜は、金属化合物や珪素化合物から所望の屈折率の薄膜を選択することができ、2種類以上の化合物を同時にスパッタリングしたり、2種類以上の化合物を交互に積層して薄膜多層構造とすることによって、自由に屈折率を変更することができる。
【選択図】 図1
Description
2 光電変換部
3 読み出しゲート部
4 CCD転送チャネル
5 チャネルストッパ
6 絶縁膜
7 転送電極
8 層間絶縁膜
9 遮光膜
10 第1平坦化膜(第1透明膜)
11 層内レンズ
12 第2平坦化膜(第3透明膜)
13 カラーフィルタ
14 保護膜
15 マイクロレンズ
16 高屈折率透明膜(第2透明膜)
17 レジストパターン
18 層内レンズ
18a 層内レンズの平坦部
19 層内レンズ
20 CCD固体撮像素子
Claims (15)
- 半導体基板上に形成された光電変換部と、該光電変換部上に設けられた第1透明膜と、該光電変換部に対応した該第1透明膜上の位置に設けられた層内レンズとを有する半導体素子において、
該層内レンズは、該第1透明膜よりも屈折率が高く、2種類以上の化合物の薄膜多層構造により成膜された第2透明膜の上下面の少なくとも一方面が凸状に形成されている半導体素子。 - 前記第2透明膜は、金属化合物および珪素化合物から選ばれた2種類以上の化合物を含む請求項1に記載の半導体素子。
- 半導体基板上に形成された光電変換部と、該光電変換部上に設けられた第1透明膜と、該光電変換部に対応した該第1透明膜上の位置に設けられた層内レンズとを有する半導体素子において、
該層内レンズは、該第1透明膜よりも屈折率が高く、スパッタリング法により成膜された第2透明膜の上下面の少なくとも一方面が凸状に形成されている半導体素子。 - 前記第2透明膜は、金属化合物および珪素化合物から選ばれた1種類または2種類以上の化合物を含む請求項3に記載の半導体素子。
- 前記第2透明膜は、2種類以上の化合物を含む請求項3に記載の半導体素子。
- 前記第2透明膜は、2種類以上の化合物の薄膜多層構造である請求項3または5に記載の半導体素子。
- 前記第2透明膜は、酸化チタン層と窒化シリコン層とが交互に積層された薄膜多層構造である請求項1または6に記載の半導体素子。
- 前記第2透明膜は、酸化チタン層と酸化シリコン層とが交互に積層された薄膜多層構造である請求項1または6に記載の半導体素子。
- 前記第1透明膜は、前記光電変換部上方の凹部に起因する凹部を上面に有し、該上面の凹部内に前記第2透明膜が埋め込まれて該第2透明膜の下面に凸部が形成されて前記層内レンズが構成されている請求項1または3に記載の半導体素子。
- 前記第2透明膜上に該第2透明膜よりも屈折率が低い第3透明膜が形成されている請求項1または3に記載の半導体素子。
- 前記第3透明膜の上方にはマイクロレンズが形成されている請求項10に記載の半導体素子。
- 光電変換部が形成された半導体基板上に第1透明膜を成膜する第1透明膜成膜工程と、
該第1透明膜上に、該第1透明膜よりも屈折率が高い第2透明膜を、2種類以上の化合物の薄膜多層構造により成膜する第2透明膜成膜工程と、
該光電変換部に対応する該第1透明膜上の位置に該第2透明膜の上下面の少なくとも一方面に凸部を形成する層内レンズ作製工程とを有する半導体素子の製造方法。 - 光電変換部が形成された半導体基板上に第1透明膜を成膜する第1透明膜成膜工程と、
該第1透明膜上に該第1透明膜よりも屈折率が高い第2透明膜をスパッタリング法により成膜する第2透明膜成膜工程と、
該光電変換部に対応する該第1透明膜上の位置に該第2透明膜の上下面の少なくとも一方面に凸部を形成する層内レンズ作製工程とを有する半導体素子の製造方法。 - 前記第2透明膜成膜工程は、2種類以上の化合物を同時にスパッタリングして前記第2透明膜を成膜する請求項13記載の半導体素子の製造方法。
- 前記第2透明膜成膜工程は、2種類以上の化合物薄膜を順次またはこれを繰り返して積層して前記第2透明膜を薄膜多層構造に形成する請求項13記載の半導体素子の製造方法。
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JP2003408340A JP4208072B2 (ja) | 2003-12-05 | 2003-12-05 | 半導体素子およびその製造方法 |
TW093137522A TWI244757B (en) | 2003-12-05 | 2004-12-03 | Semiconductor device and method for fabricating the same |
KR1020040101559A KR100602881B1 (ko) | 2003-12-05 | 2004-12-04 | 반도체 소자 및 그 제조방법 |
US11/006,509 US7439554B2 (en) | 2003-12-05 | 2004-12-06 | Semiconductor device and method for fabricating the same |
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JP2003408340A JP4208072B2 (ja) | 2003-12-05 | 2003-12-05 | 半導体素子およびその製造方法 |
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JP2005174967A true JP2005174967A (ja) | 2005-06-30 |
JP4208072B2 JP4208072B2 (ja) | 2009-01-14 |
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US (1) | US7439554B2 (ja) |
JP (1) | JP4208072B2 (ja) |
KR (1) | KR100602881B1 (ja) |
TW (1) | TWI244757B (ja) |
Cited By (4)
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JP2007281296A (ja) * | 2006-04-10 | 2007-10-25 | Nikon Corp | 固体撮像装置、および電子カメラ |
JP2009260445A (ja) * | 2008-04-11 | 2009-11-05 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
US8395686B2 (en) | 2007-12-06 | 2013-03-12 | Sony Corporation | Solid-state imaging device, method of manufacturing the same, and camera |
JP2020086408A (ja) * | 2018-11-30 | 2020-06-04 | キヤノン株式会社 | 光学装置および機器 |
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JP4761505B2 (ja) * | 2005-03-01 | 2011-08-31 | キヤノン株式会社 | 撮像装置、ならびに撮像システム |
US20070235877A1 (en) * | 2006-03-31 | 2007-10-11 | Miriam Reshotko | Integration scheme for semiconductor photodetectors on an integrated circuit chip |
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JP2011124407A (ja) * | 2009-12-11 | 2011-06-23 | Sony Corp | 固体撮像素子及びその製造方法 |
JP5663925B2 (ja) * | 2010-03-31 | 2015-02-04 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
US9547231B2 (en) * | 2013-06-12 | 2017-01-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Device and method for making photomask assembly and photodetector device having light-collecting optical microstructure |
JP2017011002A (ja) * | 2015-06-18 | 2017-01-12 | ソニー株式会社 | 撮像素子、電子機器 |
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JP2002246578A (ja) | 2001-02-20 | 2002-08-30 | Matsushita Electric Ind Co Ltd | 固体撮像装置の製造方法 |
JP2003229553A (ja) | 2002-02-05 | 2003-08-15 | Sharp Corp | 半導体装置及びその製造方法 |
JP2004079932A (ja) | 2002-08-22 | 2004-03-11 | Sony Corp | 固体撮像素子及びその製造方法 |
-
2003
- 2003-12-05 JP JP2003408340A patent/JP4208072B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-03 TW TW093137522A patent/TWI244757B/zh not_active IP Right Cessation
- 2004-12-04 KR KR1020040101559A patent/KR100602881B1/ko not_active IP Right Cessation
- 2004-12-06 US US11/006,509 patent/US7439554B2/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007281296A (ja) * | 2006-04-10 | 2007-10-25 | Nikon Corp | 固体撮像装置、および電子カメラ |
US8395686B2 (en) | 2007-12-06 | 2013-03-12 | Sony Corporation | Solid-state imaging device, method of manufacturing the same, and camera |
JP2009260445A (ja) * | 2008-04-11 | 2009-11-05 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
US8217481B2 (en) | 2008-04-11 | 2012-07-10 | Sharp Kabushiki Kaisha | Solid-state image capturing device and electronic information device |
JP2020086408A (ja) * | 2018-11-30 | 2020-06-04 | キヤノン株式会社 | 光学装置および機器 |
US11332409B2 (en) | 2018-11-30 | 2022-05-17 | Canon Kabushiki Kaisha | Optical apparatus and equipment |
JP7301530B2 (ja) | 2018-11-30 | 2023-07-03 | キヤノン株式会社 | 光学装置および機器 |
Also Published As
Publication number | Publication date |
---|---|
TW200525741A (en) | 2005-08-01 |
TWI244757B (en) | 2005-12-01 |
KR100602881B1 (ko) | 2006-07-19 |
US7439554B2 (en) | 2008-10-21 |
KR20050054862A (ko) | 2005-06-10 |
US20050179103A1 (en) | 2005-08-18 |
JP4208072B2 (ja) | 2009-01-14 |
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