JP2005159332A5 - - Google Patents

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Publication number
JP2005159332A5
JP2005159332A5 JP2004312684A JP2004312684A JP2005159332A5 JP 2005159332 A5 JP2005159332 A5 JP 2005159332A5 JP 2004312684 A JP2004312684 A JP 2004312684A JP 2004312684 A JP2004312684 A JP 2004312684A JP 2005159332 A5 JP2005159332 A5 JP 2005159332A5
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JP
Japan
Prior art keywords
region
ultrafine carbon
channel formation
semiconductor device
forming
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Application number
JP2004312684A
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English (en)
Japanese (ja)
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JP2005159332A (ja
JP4762522B2 (ja
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Priority to JP2004312684A priority Critical patent/JP4762522B2/ja
Priority claimed from JP2004312684A external-priority patent/JP4762522B2/ja
Publication of JP2005159332A publication Critical patent/JP2005159332A/ja
Publication of JP2005159332A5 publication Critical patent/JP2005159332A5/ja
Application granted granted Critical
Publication of JP4762522B2 publication Critical patent/JP4762522B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004312684A 2003-10-28 2004-10-27 半導体装置の作製方法 Expired - Fee Related JP4762522B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004312684A JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003368159 2003-10-28
JP2003368159 2003-10-28
JP2004312684A JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010271734A Division JP5250615B2 (ja) 2003-10-28 2010-12-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2005159332A JP2005159332A (ja) 2005-06-16
JP2005159332A5 true JP2005159332A5 (enExample) 2007-11-22
JP4762522B2 JP4762522B2 (ja) 2011-08-31

Family

ID=34741101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004312684A Expired - Fee Related JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Country Status (1)

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JP (1) JP4762522B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
JP4568286B2 (ja) * 2004-10-04 2010-10-27 パナソニック株式会社 縦型電界効果トランジスタおよびその製造方法
US8890117B2 (en) 2007-03-28 2014-11-18 Qunano Ab Nanowire circuit architecture
KR101553414B1 (ko) * 2007-07-03 2015-09-15 파나소닉 주식회사 반도체 장치와 그 제조 방법 및 화상 표시 장치
EP2263273B1 (en) * 2008-04-11 2012-05-16 Sandisk 3D LLC Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
JP2011187901A (ja) 2010-03-11 2011-09-22 Canon Inc 半導体デバイスの製造方法
JP6250210B2 (ja) * 2017-04-11 2017-12-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. 半導体装置
CN113471298A (zh) * 2021-06-23 2021-10-01 Tcl华星光电技术有限公司 薄膜晶体管、显示面板及电子设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법

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