JP2005159332A5 - - Google Patents

Claims (15)

A source region, a channel formation region, and a drain region stacked in the thickness direction of the substrate, a gate insulating film surrounding the channel formation region, and at least a portion of the channel formation region overlap with each other with the gate insulating film interposed therebetween. It has a gate electrode,
The channel forming region is formed of ultra fine carbon fiber ,
A member filling the space between the ultrafine carbon fibers is formed between the ultrafine carbon fibers . In claim 1 ,
Member for filling between the ultrafine carbon fibers, wherein a that is formed of a semi-conductor material. In claim 1 ,
The member filling the space between the ultrafine carbon fibers is made of an insulating material. In any one of Claims 1 thru | or 3 ,
The channel formation region is formed of a single ultrafine carbon fiber. In any one of Claims 1 thru | or 3 ,
The channel formation region is formed of a plurality of ultrafine carbon fibers. In any one of 請 Motomeko 1 to claim 5,
The source region, the channel formation region, and the drain region stacked in the thickness direction of the substrate have a columnar shape,
It said channel formation region is a columnar shape, a semiconductor device characterized by a plurality. In claim 6,
The semiconductor device according to claim 1, wherein the gate electrode is common to the plurality of channel formation regions having a columnar shape. In any one of Claims 1 thru | or 5 ,
The source region, the channel formation region, and the drain region stacked in the thickness direction of the substrate have a columnar shape,
The gate electrode is formed on both sides of the channel formation region having a columnar shape . In any one of Claims 1 thru | or 8 ,
The ultrafine carbon fiber is a graphite nanofiber, a carbon nanofiber, a carbon nanotube, a tube-like graphite, a carbon nanocone, or a cone-like graphite. A region including a metal element is selectively formed over the first region having conductivity,
Forming an ultrafine carbon fiber on the region containing the metal element;
Forming a member filling the space between the ultrafine carbon fibers;
Forming a gate insulating film surrounding the ultrafine carbon fiber;
Forming a gate electrode in contact with the gate insulating film;
A method for manufacturing a semiconductor device, wherein the second region having conductivity connected to the ultrafine carbon fiber is formed. A region including a metal element is selectively formed over the first region having conductivity,
After the formation of ultrafine carbon fibers on a region including the metal element to form a semiconductor material,
Wherein the semiconductor material is irradiated with laser light by filling between the ultrafine carbon fibers semiconductor materials,
After removing a portion of the semiconductor materials,
Forming a gate insulating film surrounding the ultrafine carbon fiber;
Forming a gate electrode in contact with the gate insulating film;
A method for manufacturing a semiconductor device, comprising forming a second region having conductivity connected to the ultrafine carbon fiber. In claim 11 ,
The method for manufacturing a semiconductor device, wherein the laser light is laser light emitted from a continuous wave laser. In any one of Claims 10 to 12 ,
The metal elemental a method for manufacturing a semiconductor device comprising nickel, iron, cobalt, platinum, germanium, titanium, or an element selected from palladium, or that an alloy material or a compound mainly containing the element . In any one of Claims 10 to 13 ,
The method for manufacturing a semiconductor device, wherein the first region having conductivity and the second region having conductivity are a source region and a drain region. In any one of Claims 10 to 14 ,
The ultrafine carbon fibers, a method for manufacturing a semiconductor device comprising graphite nanofibers, carbon nanofibers, carbon nanotubes, tubular graphite, that the carbon nano cone or cone-like graphite.