JP2005159332A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element that can be increased in speed and can be integrated highly, to provide a semiconductor device in which semiconductor elements thus constituted are highly integrated, and to provide methods of manufacturing them. <P>SOLUTION: The semiconductor device comprises a source region, a channel forming region, and drain region, all of which are laminated upon another in the thickness direction of a substrate. The device also comprises a gate electrode superimposed upon the channel forming region through an insulating film. The channel forming region is formed of extra fine carbon fibers. Since the semiconductor device has the extra fine carbon fibers in the channel forming region, and semiconductor elements laminated upon another in the longitudinal direction of surface of the substrate, the device can be integrated highly. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a microstructured semiconductor element and a method for manufacturing a semiconductor device formed of the microstructured semiconductor element.

  In recent years, electric appliances including semiconductor devices (video cameras, digital cameras, projectors, personal computers, mobile computers, mobile phones, electronic books, and the like) have been increasingly demanded for reduction in size, weight, and cost. It is a natural requirement for users that the performance does not decrease even if the appliance is reduced in size and weight, and the appliance still requires higher performance. Note that the function and performance of an electric appliance are determined by the characteristics of an LSI (abbreviation for Large Scale Integrated Circuit) constituting the system and the characteristics of the display device in the display unit of the electric appliance. Therefore, research and development relating to miniaturization and high integration of semiconductor devices such as LSIs and high luminance and high definition of display devices have been promoted. This is because an increase in the fineness and the degree of integration increases the number of functions that can be mounted on a single chip, thus satisfying the demands for reducing the size, weight, and performance of the above-described electric appliance. Further, in the display device, high-definition image display can be performed by increasing the number of pixels.

  In addition, for example, a circuit that constitutes one system (functional circuit) such as MPU, memory, and I / O interface is monolithically mounted on one chip, enabling system-on that can achieve high speed, high reliability, and low power consumption. Tips have been proposed. Further, there has been proposed a system-on-panel in which the above-described system (functional circuit) is formed by thin film transistors (hereinafter referred to as TFTs) and is formed (mounted) on the same substrate as the display panel. In order to realize these, high integration technology development continues. Further, in order to form the system (functional circuit) as described above with TFTs, it is necessary to produce TFTs with a high switching speed. For this reason, the crystallinity of the semiconductor region of the TFT is increased and the TFT element is increasingly miniaturized, and the size of each part of the semiconductor element (wiring width, channel width, contact hole diameter, etc.) is reduced. Attempts have been made.

However, in miniaturization, the alignment accuracy of the exposure process for forming the resist mask, the accuracy of the processing technique by reduced projection exposure, the finished dimensions of the resist mask formed after developing the resist, and the interlayer insulation to open the contact hole The amount of etching in the lateral direction when the film is etched must be precisely controlled, making the manufacture of a semiconductor device having a finely structured semiconductor element extremely difficult.

  Further, when the size of each part of the semiconductor element (wiring width, channel width, contact hole diameter, etc.) is reduced in order to increase the response speed of the semiconductor device, the threshold voltage increases due to the short channel effect, There is a problem that reliability decreases.

  Based on the above, the present invention provides a semiconductor element that can be increased in speed and integration, a semiconductor device in which the semiconductor element is highly integrated, and a manufacturing method thereof.

  One embodiment of the present invention includes a source region, a channel formation region, and a drain region that are stacked in a thickness direction of a substrate, and a gate electrode that overlaps the channel formation region with an insulating film interposed therebetween, and the channel formation region Is a semiconductor device formed of ultrafine carbon fibers.

Another aspect of the present invention is a semiconductor device in which a semiconductor element is formed over a substrate surface, and the semiconductor element is stacked in contact with a vertical direction of the substrate surface, a channel formation region, and a drain A gate insulating film formed on a side surface of the channel formation region, and a gate electrode formed on the opposite side of the channel formation region with the gate insulating film interposed therebetween. It is made of carbon fiber.

  The ultrafine carbon fiber is surrounded by a member filling the ultrafine carbon fiber, and the material thereof is formed of an insulating material or a semiconductor material.

  In addition, when the member filled with the ultrafine carbon fiber is formed of an insulating material, it also functions as a gate insulating film.

  The channel forming region is formed of one ultrafine carbon fiber or a plurality of ultrafine carbon fibers.

A region containing a metal element is formed between the source region or the drain region and the ultrafine carbon fiber.

The region containing the metal element is an element selected from nickel, iron, cobalt, platinum, germanium, titanium, palladium, or zinc, or an alloy material or compound containing the element as a main component.

  The gate electrode surrounds the channel formation region. In this case, a plurality of channel formation regions may be covered with one gate electrode.

  The gate electrode overlaps a part of the channel formation region. In this case, the channel formation region may overlap with a plurality of gate electrodes.

  As the substrate, a single crystal silicon substrate or a compound semiconductor substrate, or glass, quartz, plastic, alumina, ceramic, or a conductive member having an insulating film formed on the surface thereof is used.

The ultrafine carbon fiber is graphite nanofiber, carbon nanofiber, carbon nanotube, tubular graphite, carbon nanocone, or cone-like graphite.

  According to another aspect of the present invention, a region containing a metal element is selectively formed on the first region having conductivity, an ultrafine carbon fiber is formed on the region containing the metal element, and the ultrafine carbon fiber is formed. Forming a gate electrode in contact with the insulating film surrounding the ultrafine carbon fiber, and forming a conductive second region connected to the ultrafine carbon fiber. is there.

  In addition, a gate electrode is formed over the first region having conductivity via a first insulating film, a second insulating film covering the surface of the gate electrode is formed, and the first insulating film After removing a part and exposing the first region having conductivity, a region having a metal element is formed on the first region having conductivity, and an extremely fine region is formed on the region having the metal element. This is a method for manufacturing a semiconductor device in which a carbon fiber is formed, a member filling the space between the ultrafine carbon fibers is formed, and then a conductive second region connected to the ultrafine carbon fibers is formed.

  In addition, a region containing a metal element is selectively formed over the first region having conductivity, an ultrafine carbon fiber is formed over the region containing the metal element, a semiconductor film is formed, and the semiconductor The film is irradiated with laser light to fill the space between the ultrafine carbon fibers with a member formed of a semiconductor material, and after removing a part of the member formed of the semiconductor material, the ultrafine carbon fiber is surrounded. This is a method for manufacturing a semiconductor device in which an insulating film is formed, a gate electrode in contact with the insulating film surrounding the ultrafine carbon fiber is formed, and a conductive second region connected to the ultrafine carbon fiber is formed.

  In addition, a gate electrode is formed over the first region having conductivity via a first insulating film, a second insulating film covering the surface of the gate electrode is formed, and the first insulating film After removing a part and exposing the first region having conductivity, a region having a metal element is formed on the first region having conductivity, and an extremely fine region is formed on the region having the metal element. After forming the carbon fiber, forming a semiconductor film, irradiating the semiconductor film with a laser beam, filling the space between the ultrafine carbon fibers with a member formed of a semiconductor material, and then a part of the semiconductor film And forming a third insulating film on the semiconductor film and the gate electrode, removing a part of the third insulating film to expose the ultrafine carbon fiber, and then conducting a second conductive layer. This is a method for manufacturing a semiconductor device in which the region is formed.

The laser beam is a laser beam emitted from a continuous wave laser. Typical continuous wave lasers are Nd: YAG laser, Nd: YVO ₄ laser, Nd: YLF laser, Nd: YA.
lO ₃ laser, a glass laser, ruby laser, alexandrite laser, or Ti,: sapphire laser.

  The first region having conductivity and the second region having conductivity are a source region and a drain region.

The ultrafine carbon fiber is graphite nanofiber, carbon nanofiber, carbon nanotube, tubular graphite, carbon nanocone, or cone-shaped graphite.

  As the CNT, there is a single layer or a multilayer, and either one can be used here.

  The ultrafine carbon fiber exhibits a semiconductor. For this reason, the semiconductor element using the ultrafine carbon fiber exhibits ballistic conduction like the field effect transistor. Further, the ultrafine carbon fiber is a nano unit, is fine, and has stability. Furthermore, the semiconductor elements of the present invention are stacked in the vertical direction with respect to the substrate surface. For this reason, it is possible to form a fine semiconductor element having a high switching speed. In addition, since the semiconductor element is minute, a highly integrated semiconductor device can be manufactured.

  The best mode for carrying out the invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention should not be construed as being limited to the description of the embodiment modes. In the drawings, common portions are denoted by the same reference numerals, and detailed description thereof is omitted.

(First embodiment)

One embodiment of a semiconductor device of the present invention will be described with reference to FIG. In this embodiment, the gate electrode surrounds (encloses) the channel formation region.

FIG. 1A is a perspective view schematically showing a semiconductor element. The semiconductor element includes source and drain regions 101a and 101b, a channel formation region (not shown) formed between the source and drain regions, a gate insulating film 102 covering at least the channel formation region, and gate insulation. The gate electrode 103 surrounds the channel formation region with the film 102 interposed therebetween.

  FIG. 1B is a cross-sectional view illustrating (A)-(A ′) in FIG. A channel formation region 104 is formed between the source and drain regions 101a and 101b, and the channel formation region is surrounded (enclosed) by the gate electrode 103 with the gate insulating film 102 interposed therebetween.

  A member 107 is formed between the ultrafine carbon fibers 105 to fill the space between the ultrafine carbon fibers. As a typical example, it is formed of an insulating material or a semiconductor material.

  When the member 107 filling the space between the ultrafine carbon fibers is made of an insulating material, the gate insulating film 102 is not provided as shown in FIG. 12, and the gate is in contact with the material filling the space between the ultrafine carbon fibers. An electrode 103 may be provided. In this case, the number of steps for forming the semiconductor element can be reduced, and the throughput can be improved.

When the member 107 filling the space between the ultrafine carbon fibers is formed of a semiconductor material, the channel forming region 104 is the member filling the ultrafine carbon fiber and the space therebetween. On the other hand, when the member filling the space between the ultrafine carbon fibers is formed of an insulating material, the channel forming region 104 is an ultrafine carbon fiber. At this time, when a low dielectric constant material (preferably a material having a relative dielectric constant of 4 or less) such as acrylic, benzocyclobutene, parylene, flare, polyimide, siloxane polymer, or the like is used as an insulating material, The generated parasitic capacitance can be reduced, and low power consumption and high speed operation are possible.

The ultrafine carbon fiber is formed on the region 106 having a metal element selectively formed on one of the source region and the drain region, and is connected to the other of the source region and the drain region. The region 106 having a metal element is a region formed of a metal element or a region formed of a metal element compound. In this embodiment, the region 106 having a metal element is formed of a nickel element, an iron element, a cobalt element, a platinum element, a germanium element, a titanium element, a palladium element, a zinc element, or a compound of these elements. Examples of the compound include silicides and oxides.

As shown in FIG. 13, the channel formation region 104 may be formed with a single ultrafine carbon fiber 105. In this case, a finer semiconductor element can be formed and a highly integrated semiconductor device can be manufactured.

  The source or drain regions 101a and 101b can be formed using a conductive material. As the conductive material, a metal material such as aluminum, titanium, gold, platinum, or tungsten, or an alloy including these materials or a combination of a plurality of types is used. Further, it may be a part of a conductive semiconductor, typically a p-type or n-type crystalline semiconductor film or a single crystal semiconductor substrate.

  The source or drain regions 101a and 101b are formed by performing photolithography after a metal material of aluminum, titanium, gold, platinum, or tungsten is formed by a sputtering method, an evaporation method, or a CVD method. In addition, an impurity imparting n-type or p-type to the semiconductor substrate is added to any region. Further, in the case where the source region or the drain region 101b is formed over an insulating substrate, an n-type or p-type semiconductor film is formed over the insulating substrate, and a known photolithography process is performed. Etch to desired shape. Alternatively, a semiconductor film is formed over an insulating substrate, an impurity element imparting n-type or p-type is added to the semiconductor film, and etching is performed into a desired shape by a known photolithography process.

  Note that the surface of the source or drain regions 101a and 101b, which is in contact with the ultrafine carbon fiber 105 or the region 106 containing a metal element, is constant with respect to the substrate surface like the source or drain regions 111a and 111b illustrated in FIG. It is good also as a structure which has this inclination. In this case, the ends of the ultrafine carbon fibers are also arranged with an inclination with respect to the substrate surface.

  In the present embodiment, the source region, the drain regions 101a and 101b, and the channel formation region 104 are shown as cylindrical, but the present invention is not limited to this structure. For example, it can be formed in a prismatic structure such as a triangular prism, a quadrangular prism, or a polygonal prism. Furthermore, the source region, the drain region, and the channel formation region may have different cross-sectional structures.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. Therefore, the semiconductor element is fine and has a high switching speed.

(Second Embodiment)
In this embodiment mode, a semiconductor element having a structure different from that in Embodiment Mode 1 is shown with reference to FIG. In addition, about the site | part similar to FIG. 1, it demonstrates using the same code | symbol and detailed description of each site | part is abbreviate | omitted.

FIG. 2A is a perspective view schematically showing the semiconductor element of this embodiment. The semiconductor element includes a source region and a drain region 101a, 101b, a channel formation region (not shown) formed between the source region and the drain region, a gate insulating film 102 that covers at least the channel formation region, and a gate insulating film. A single gate electrode 203 is formed so as to overlap a part of the channel formation region via 102.

  The ratio at which the gate electrode overlaps the channel formation region can be arbitrarily set.

  FIG. 2B is a cross-sectional view taken along (B)-(B ′) of FIG. A channel formation region 104 is formed between the source region and the drain region, and the channel formation region overlaps with the gate electrode 203 with the gate insulating film 102 interposed therebetween.

  In the same manner as in the first embodiment, a member that fills the space between the ultrafine carbon fibers 105 is formed between the ultrafine carbon fibers 105. As a typical example, it is formed of an insulating material or a semiconductor material.

  When the member 107 that fills the space between the ultrafine carbon fibers is formed of a semiconductor material, the ultrafine carbon fiber 105 and the member 107 that fills the space are channel forming regions. On the other hand, when the member 107 filling the space between the ultrafine carbon fibers is formed of an insulating material, the channel forming region is the ultrafine carbon fiber 105.

  Further, as in the first embodiment, the ultrafine carbon fiber 105 is formed on a region having a metal element selectively formed on one of the source region and the drain region, and in the source region or the drain region. Connected to the other.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. Therefore, the semiconductor element is fine and has a high switching speed.

(Third embodiment)
In the present embodiment, a semiconductor element having a structure different from that of the first embodiment and the second embodiment is shown using FIG. In addition, about the site | part similar to FIG. 1, it demonstrates using the same code | symbol and detailed description of each site | part is abbreviate | omitted.

  FIG. 3A is a perspective view schematically showing the semiconductor element of this embodiment. The semiconductor element includes a source region and a drain region 101a, 101b, a channel formation region (not shown) formed between the source region and the drain region, a gate insulating film 102 that covers at least the channel formation region, and a gate insulating film. A plurality of gate electrodes 303 a and 303 b overlap with part of the channel formation region via 102. In this embodiment, it is formed of two gate electrodes.

  The ratio of the gate electrode overlapping the channel formation region and the distance between the gate electrodes can be arbitrarily set.

  FIG. 3B is a cross-sectional view taken along (c)-(c ′) of FIG. A channel formation region 104 is formed between the source and drain regions 101a and 101b, and the channel formation region overlaps with the two gate electrodes 303a and 303b with the gate insulating film 102 interposed therebetween.

  In the same manner as in the first embodiment, a member that fills the space between the ultrafine carbon fibers 105 is formed between the ultrafine carbon fibers 105. As a typical example, it is formed of an insulating material or a semiconductor material.

  When the member 107 that fills the space between the ultrafine carbon fibers is formed of a semiconductor material, the ultrafine carbon fiber 105 and the member 107 that fills the space are channel forming regions. On the other hand, when the member 107 filling the space between the ultrafine carbon fibers is formed of an insulating material, the channel forming region is the ultrafine carbon fiber 105.

Further, as in the first embodiment, the ultrafine carbon fiber 105 is formed on a region having a metal element selectively formed on one of the source region and the drain region, and the source region or the drain region. Connected to the other.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. Therefore, the semiconductor element is fine and has a high switching speed.

(Fourth embodiment)
In this embodiment, a semiconductor element having a structure different from that of the first to third embodiments is shown with reference to FIG. In addition, about the site | part similar to FIG. 1, it demonstrates using the same code | symbol and detailed description of each site | part is abbreviate | omitted.

FIG. 4A is a perspective view schematically showing the semiconductor element of this embodiment. The semiconductor element includes source and drain regions 101a to 101d, a channel formation region (not shown) formed between the source and drain regions, gate insulating films 102a and 102b covering the channel formation region, and gate insulation. The gate electrode 403 surrounds the channel formation region via the films 102a and 102b. In this embodiment, one gate electrode 403 surrounds two channel formation regions.

  In this embodiment, the gate electrode 403 surrounds the channel formation regions 104a and 104b. However, the present invention is not limited to this structure, and a part of the two channel formation regions 104a and 104b may overlap each other. Good.

  FIG. 4B is a cross-sectional view taken along line (c)-(c ′) of FIG. Channel formation regions 104a and 104b are formed between the source region and the drain region (between 101a and 101b and between 101c and 101d). The channel formation region is gated through gate insulating films 102a and 102b. Surrounded by the electrode 403.

  As in the first embodiment, a member that fills the space between the ultrafine carbon fibers 105a and 105b is formed between the ultrafine carbon fibers 105a and 105b. As a typical example, it is formed of an insulating material or a semiconductor material.

When the member 107 filling the space between the ultrafine carbon fibers is formed of a semiconductor material, the ultrafine carbon fibers 105a and 105b and the members 107a and 107b filling the space between them are channel forming regions. On the other hand, when the members 107a and 107b filling the space between the ultrafine carbon fibers are formed of an insulating material, the channel forming regions are the ultrafine carbon fibers 105a and 105b.

Similarly to the first embodiment, the ultrafine carbon fibers 105a and 105b are formed on a region having a metal element selectively formed on one of the source region and the drain region, and the source region or the drain Connected to the other side of the area.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. Therefore, the semiconductor element is fine and has a high switching speed.

(Fifth embodiment)
In this embodiment, a method for manufacturing the semiconductor element shown in any of Embodiments 1 to 4 will be described with reference to FIGS. In this embodiment mode, a method for manufacturing the semiconductor element shown in the first embodiment mode is shown, but it can be applied to each of the semiconductor elements shown in the second to fourth embodiment modes.

In the present embodiment, an insulating substrate, typically glass, quartz, ceramic, or plastic is used as the substrate. As the glass substrate, an alkali-free glass substrate such as aluminoborosilicate glass, barium borosilicate glass, or aluminosilicate glass is used. Furthermore, a semiconductive or conductive substrate such as a silicon substrate or a stainless steel substrate having an insulating film formed on the surface is also applicable.

  As shown in FIG. 5A, a semiconductor region 502 having a desired shape is formed over a substrate 501, and a first interlayer insulating film is formed thereover. The semiconductor region 502 is one of a source region and a drain region.

  Here, the semiconductor region 502 is formed by forming a crystalline semiconductor film containing phosphorus (P) or boron (B) over a substrate and etching it into a desired shape using a resist mask formed by a photolithography process.

The first interlayer insulating film is a raw material mainly composed of an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.) or an organic material (polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, or siloxane polymer). To form a layer.

Next, a resist mask (not shown) is formed on part of the first interlayer insulating film by a photolithography process. Thereafter, a part of the interlayer insulating film is removed by using a known method such as a dry etching method or a wet etching method to form a second interlayer insulating film 504 having a contact hole 503, and the semiconductor region 502 is formed. Expose part.

  Next, as illustrated in FIG. 5B, a region 511 including a metal element is selectively formed on the surface of the exposed semiconductor region. In the region including the metal element, a first conductive film is formed at least in the semiconductor region, a part of the first conductive film is removed by a lift-off method, an etching method, or the like, and a striped metal element is formed over the semiconductor region. A region 221 including the same is formed. In addition, a region containing a metal element can be formed using a mask. Further, after the first conductive film is formed on the semiconductor region, it is heated at a predetermined temperature to form a metal compound (metal silicide, metal nitride, metal oxide, etc.) on the surface of the semiconductor region. be able to. Typical examples of the first conductive film include a nickel element, an iron element, a cobalt element, a platinum element, a germanium element, a titanium element, a palladium element, a zinc element, an alloy of these elements, and a film formed of a compound. Is mentioned.

  Next, an ultrafine carbon fiber 512 is formed using the region 511 containing a metal element as a catalyst. As a forming method, a catalytic CVD method using alcohol as a source gas, a thermal CVD method in which heating is performed at 100 to 1100 degrees, preferably 400 to 650 degrees in an atmosphere containing a hydrocarbon such as methane, ethylene, or acetylene, There is a plasma CVD method in which a hydrocarbon is used and formed under a reduced pressure of 0.1 to 10 torr. In the plasma CVD method, by applying a negative voltage to the substrate side, the ultrafine carbon fiber grows in a direction perpendicular to the substrate. Alternatively, CNTs can be formed by a plasma CVD method in which a pulse voltage is applied using a hydrocarbon as a raw material in an atmospheric pressure atmosphere.

Next, a member 513 that fills the space between the ultrafine carbon fibers is formed. Examples of the member 513 that fills the space between the ultrafine carbon fibers include a member formed of a semiconductor material or a member formed of an insulating material. In this embodiment, an insulating material is used to form a member that fills the space between the ultrafine carbon fibers. The insulating material is a material that can be applied, and representative examples include a polyimide resin, an acrylic resin, a resin containing a siloxane structure, or a coated silicon oxide represented by organic SOG (Spin on Glass), inorganic SOG (Spin on Glass), or the like. A membrane is mentioned. Examples of the inorganic SOG include PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (borophosphosilicate glass), silicate-based SOG, alkoxysilicate-based SOG, and polysilazane-based SOG. Examples of the organic SOG include a silicon oxide film having a Si—CH ₃ bond represented by polymethylsiloxane. By applying these by spin coating, the space between the ultrafine carbon fibers is filled.

  In addition, as shown in FIG. 15, the member 513 that fills the space between the ultrafine carbon fibers may be discharged from the discharge port 561 by the droplet discharge method. . Reference numeral 562 denotes a member that fills a space between ultrafine carbon fibers formed by a droplet discharge method. By this method, it is possible to discharge the material only in a desired region, and it is possible to reduce the material and cost.

  Next, as shown in FIG. 5C, the surface of the member 513 filling the space between the ultrafine carbon fibers is etched to expose the ultrafine carbon fibers 512, and a part or all of the interlayer insulating film 504 is made different. Isotropic etching is performed to form an ultrafine carbon fiber and a region 521 surrounding the same, as shown at 521 in FIG. The region surrounding the ultrafine carbon fiber is a part of the member that fills the space between the ultrafine carbon fibers.

  Next, a second insulating film is formed so as to cover the ultrafine carbon fiber and the region 521 surrounding it. The second insulating film becomes a later gate insulating film. As the second insulating film, a single layer or a laminated structure of an insulating film containing silicon is formed using a plasma CVD method or a sputtering method. When the ultrafine carbon fiber and the semiconductor region are covered with an insulating film due to the etching conditions of the member 513 filling the space between the ultrafine carbon fibers and the second interlayer insulating film, it is necessary to form the second insulating film. There is no.

  Next, a second conductive film 523 is formed over the second insulating film. The material of the second conductive film can be a single layer structure or a multilayer structure. The material of the gate electrode was selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), and neodymium (Nd). It can be formed of an element or an alloy material or a compound material containing these elements as main components. Alternatively, a silver-copper-palladium alloy (AgPdCu alloy) may be used. Further, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used.

  Next, as shown in FIG. 5D, the gate electrode 531 is formed by etching the second conductive film into a desired shape. For example, by performing anisotropic etching without using a mask, a gate electrode surrounding the channel formation region as shown in the first embodiment can be formed. In addition, by using a mask in a desired region, a gate electrode that overlaps part of the channel formation region as shown in the second to fourth embodiments can be formed.

  Next, as shown in FIG. 5E, after the third interlayer insulating film 541 is formed, a part of the third interlayer insulating film is etched to form a contact hole, and in the channel formation region. Some ultrafine carbon fibers 512 and the semiconductor region 502 are partially exposed. Next, conductive films 542 and 543 connected to the channel formation region and the semiconductor region are formed. In this embodiment mode, a conductive crystalline semiconductor film is formed as a conductive layer connected to the channel formation region and the semiconductor region, and is etched into a desired shape. The crystalline semiconductor film connected to the channel formation region is the other of the drain region and the source region. Note that, as in this embodiment, the conductive film connected to the channel formation region and the conductive film connected to the semiconductor region are formed over the same interlayer insulating film, but the structure is not limited to this, and different layers are used. It may be formed.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. For this reason, it is possible to manufacture a fine semiconductor element having a high switching speed.

(Sixth embodiment)
In this embodiment, a method for manufacturing the semiconductor element described in any of Embodiments 1 to 4 will be described with reference to FIGS. In the present embodiment, an example in which a semiconductor film is used as a member filling the space between the ultrafine carbon fibers in the fifth embodiment is shown.

  As shown in FIG. 6A, ultra fine carbon fibers 512 are formed in the contact holes formed on the semiconductor region 502 by the process of the fifth embodiment.

  Next, a member 551 that fills the space between the ultrafine carbon fibers is formed. In this embodiment, the member 551 that fills the space between the ultrafine carbon fibers is formed using a semiconductor material. As a typical example of the semiconductor material, an amorphous semiconductor film or a crystalline semiconductor film is given. An amorphous or crystalline semiconductor film is formed on a substrate by plasma CVD or sputtering, and the semiconductor film is irradiated with a laser beam 552 emitted from a continuous wave laser and melted.

As a continuous wave laser, an Nd: YAG laser, an Nd: YVO ₄ laser, an Nd: YLF laser, an Nd: YAlO ₃ laser, a glass laser, a ruby laser, an alexandride laser, or a Ti: sapphire laser is appropriately used. it can.

  As a result, a member that fills the space between the ultrafine carbon fibers as indicated by 553 in FIG. 6B can be formed. Note that the melted amorphous semiconductor film is crystallized between ultrafine carbon fibers.

  Thereafter, as shown in FIGS. 6C to 6E, the second insulating film 522, the gate electrode 531, and the conductive films 542 and 543, which become the gate insulating film, are performed by the same process as in the fifth embodiment. A third interlayer insulating film 541 is formed.

  Note that in this embodiment, a single crystal semiconductor substrate can be used instead of an insulating substrate. In this case, the semiconductor region 502 may be formed by doping a part of the semiconductor substrate with an impurity element.

  In addition, although the member 513 that fills the space between the ultrafine carbon fibers has been formed of an insulating material, it may be formed of a semiconductor material. In this case, the first insulating film 522 is essential.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. For this reason, it is possible to manufacture a fine semiconductor element having a high switching speed.

(Seventh embodiment)
In the present embodiment, as a manufacturing process of the semiconductor element shown in the first to fourth embodiments, a process different from the fifth embodiment or the sixth embodiment is shown. In this embodiment, an example in which a semiconductor material such as silicon single crystal or a single crystal substrate of a semiconductor compound is used as the substrate is shown. This embodiment can also be applied to a substrate having an insulating surface such as a glass substrate.

As shown in FIG. 7A, a p-type well region or an n-type well region 602 is formed by doping a silicon substrate 601 with an impurity imparting p-type conductivity or an impurity imparting n-type conductivity. Note that a substrate having an insulating surface as a substrate, typically glass, quartz, ceramic, or plastic, or a semiconductive or conductive substrate such as a silicon substrate or a stainless steel substrate with an insulating film formed on the surface was used. In this case, as shown in the fifth embodiment or the sixth embodiment, a semiconductor film having a desired shape and conductivity is formed.

Next, a first insulating film 603 is formed on the substrate surface. As the first insulating film, a single layer or a laminated structure of an insulating film containing silicon is formed using a plasma CVD method, a sputtering method, a thermal oxidation method, or the like.

  Note that the first insulating film 603 is provided to insulate the p-type well region or the n-type well region 602 from the gate electrode 611 to be formed later.

  Next, a first interlayer insulating film is formed on the first insulating film. As the interlayer insulating film, a material and a manufacturing method similar to those of the first interlayer insulating film shown in the fifth embodiment are appropriately used. Next, a part of the interlayer insulating film is etched to form an interlayer insulating film 604 in which contact holes are formed, and the first insulating film 603 is exposed.

  Next, a first conductive film 605 is formed in the contact hole. Thereafter, the first conductive film can be manufactured using the same material and manufacturing method as those of the second conductive film 523 of the fifth embodiment.

  Next, as illustrated in FIG. 7B, the gate electrode 611 is formed by etching part of the first conductive film. In this embodiment, the gate electrode surrounding the channel formation region as shown in the first embodiment can be formed by using anisotropic etching. In addition, a gate electrode as shown in the second to fourth embodiments can be appropriately formed depending on the region to be etched. Furthermore, when the first conductive film is formed, a gate electrode having a desired shape can be formed without an etching step by using a mask.

  Next, a second insulating film 612 is formed at least on the exposed portion of the gate electrode. The second insulating film can be formed by the same method as the second insulating film of the fifth embodiment. The second insulating film is also formed using the same material and method as the second insulating film of the fifth embodiment. After that, in the second insulating film, the portion of the second insulating film in contact with the p-type well region or the n-type well region is removed by dry etching or wet etching, as shown in FIG. A gate insulating film 621 is formed.

  Note that when the gate electrode is formed using aluminum, tantalum, titanium, or the like, the gate insulating film 621 is formed on the surface of the gate electrode by anodic oxidation or plasma oxidation instead of forming the gate insulating film by the above process. You can also In the case of this step, since the second insulating film in contact with the p-type well region or the n-type well region is not formed, the number of steps can be reduced.

  Next, a region 511 containing a metal element is formed on the surface of the semiconductor region by the same process as in the fifth embodiment, and then an ultrafine carbon fiber 512 is formed on the region.

  Next, as shown in FIG. 7D, the member 513 that fills the space between the ultrafine carbon fibers is formed as in the fifth embodiment. In this embodiment, the member 513 filling between the ultrafine carbon fibers can be formed of an insulating material or a semiconductor material.

  Next, as shown in FIG. 7E, the surface of the member 513 filling the space between the ultrafine carbon fibers is etched to expose the surface of the ultrafine carbon fibers and form a channel formation region 641. In this step, a known wet etching method, dry etching method, CPM (Chemical-Mechanical Polishing) method or the like can be used. Note that the channel formation region 641 is a region formed of an ultrafine carbon fiber 512 and a semiconductor material.

  Next, after forming a second interlayer insulating film, a part of the second interlayer insulating film is etched to form a third interlayer insulating film 642 in which contact holes are formed, and a channel forming region 641 To expose a part of Next, a drain region 643 connected to the channel formation region is formed.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. For this reason, it is possible to manufacture a fine semiconductor element having a high switching speed.

(Eighth embodiment)
In this embodiment, as a manufacturing process of the semiconductor element shown in the first to fourth embodiments, a manufacturing process of a structure using an insulating film as a material filling the space between the ultrafine carbon fibers in the seventh embodiment. Show.

  As shown in FIGS. 8A to 8C, ultrafine carbon fibers 512, a gate insulating film 621, and a gate electrode 611 are formed on a 601 silicon substrate by the same process as in the seventh embodiment.

  Next, as shown in FIG. 8D, a member 713 that fills the space between the ultrafine carbon fibers is formed between the ultrafine carbon fibers. In this embodiment, an insulating film is formed as a member that fills the space between the ultrafine carbon fibers. The material of the insulating film and the formation method thereof can be the same as the member 513 that fills the space between the ultrafine carbon fibers of the fifth embodiment. In this embodiment, since the member filling the space between the ultrafine carbon fibers is an insulating film, it also functions as a second interlayer insulating film. Therefore, the first interlayer insulating film and the third insulating film are formed with a certain film thickness.

  Next, as shown in FIG. 8E, a part of the member filling the space between the ultrafine carbon fibers is etched by a known method such as a dry etching method or a wet etching method to form a contact hole. , Expose a part of ultra fine carbon fiber.

  Next, a drain region 643 connected to the ultrafine carbon fiber which is the channel formation region 641 is formed.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. For this reason, it is possible to manufacture a fine semiconductor element having a high switching speed.

  In this example, the semiconductor element shown in the first to fourth embodiments is formed by stacking a source region, a channel formation region, and a drain formation region in the substrate film thickness direction, and forming the channel formation region with ultrafine carbon fibers. FIG. 9 shows an example of a semiconductor device having a multilayer wiring structure.

  As shown in FIG. 9A, a source region, a channel formation region, and a drain formation region are stacked on the substrate in the film thickness direction by the steps shown in the fifth to eighth embodiments, and channel formation is performed. A semiconductor element having a region formed of ultrafine carbon fiber is formed. In this embodiment, the process shown in the eighth embodiment is applied, and a p-type well region or an n-type well region 602 on a 601 silicon substrate, a channel formation region 641 connected to the semiconductor region, and the channel formation region are provided. A third insulating film 612 that surrounds and functions as a gate insulating film, a gate electrode 611 that surrounds the channel formation region through the third insulating film, and a drain region 643 that is connected to the channel formation region are formed. Note that the second insulating film 610 that insulates between the gate electrode 611 and the p-type well region or the n-type well region 602, the first insulating film formed on the second insulating film and on the side surface of the gate electrode. The interlayer insulating film 604, the third insulating film 612 formed on the first interlayer insulating film, and the member 713 formed on the third insulating film and filling between the ultrafine carbon fibers are formed. .

  Next, as shown in FIG. 9B, a third interlayer insulating film 811 is formed over the member 713 and the drain region 643 filling the space between the ultrafine carbon fibers functioning as the second interlayer insulating film. The third interlayer insulating film can be formed using a material similar to that of the first interlayer insulating film 407. Next, part of the third interlayer insulating film is etched to open contact holes, and then a first conductive film 812 and a second conductive film 813 are formed. The first conductive film 812 is formed using a conductive material having a blocking effect. A typical example of the first conductive film is a film formed of Ti, TiN, TiW, Ta, TaN, and WSix. As the second conductive film 813, a reflowable metal material film 706 is formed. Here, an alloy containing aluminum as a main component, typically an AlGe film, is formed. In this embodiment, a conductive film having a two-layer structure is formed.

  Next, as shown in FIG. 9C, heat treatment at 350 ° C. to 400 ° C. is performed to reflow the second conductive film, thereby reducing the unevenness. Here, a metal film 821 in which unevenness is reduced is formed. The first conductive film and the second conductive film are etched into a desired shape, so that a first connection wiring 832 illustrated in FIG. 9D is formed.

  Note that instead of the alloy containing aluminum, a film formed of copper may be formed as the second conductive film, and the connection wiring may be formed by a damascene method. Since the wiring formed of copper has low resistance and flatness, the device can be further integrated by enabling multilayer wiring.

  Next, the formation of the interlayer insulating film, the formation of the contact hole, the formation of the metal material film, the reflow process, and the etching process are repeated in the same manner to obtain the fourth interlayer insulating film 833 and the fifth interlayer insulating film. 835, a second connection wiring 834, and a third connection wiring 836 are formed.

  In this embodiment, a semiconductor device having a multilayer structure including a semiconductor element formed over a single crystal semiconductor substrate is shown; however, the present invention is not limited thereto, and an FET using a substrate having an insulating surface such as a glass substrate is included. It can also be applied to a semiconductor device.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. For this reason, it is possible to manufacture a fine semiconductor element having a high switching speed. In addition, since the multilayer wiring structure is provided, further integration of elements can be achieved.

  In this embodiment, a package which is an example of a semiconductor device including a semiconductor element formed using the present invention will be described with reference to FIGS. FIG. 10A is a perspective view showing a cross-sectional structure of a package in which a chip is connected to an interposer by a wire bonding method. Reference numeral 901 denotes an interposer, 902 denotes a chip, and 903 denotes a mold resin layer. The chip 902 is mounted on the interposer 901 with a mounting adhesive 904.

  An interposer 901 shown in FIG. 10A is a ball grid array type in which solder balls 905 are provided. The solder ball 905 is provided on the side opposite to the side on which the chip 902 of the interposer 901 is mounted. The wiring 906 provided in the interposer 901 is electrically connected to the solder ball 905 through a contact hole provided in the interposer 901.

  In this embodiment, the wiring 906 for electrical connection between the chip 902 and the solder ball 905 is provided on the surface of the interposer 901 on which the chip is mounted. It is not limited to. For example, the wiring may be provided in multiple layers inside the interposer.

  In FIG. 10A, the chip 902 and the wiring 906 are electrically connected by a wire 907. FIG. 10B is a cross-sectional view of the package illustrated in FIG. The chip 902 is provided with the semiconductor element 909 shown in the first to fourth embodiments, and a pad 908 is provided on the opposite side of the chip 902 from the side where the interposer 901 is provided. . The pad 908 is electrically connected to the semiconductor element 909. The pad 908 is connected to a wiring 906 provided in the interposer 901 by a wire 907.

  Reference numeral 910 corresponds to a part of the printed wiring board, and 911 corresponds to a wiring or an electrode provided on the printed wiring board 910. The wiring 906 is connected to a wiring or electrode 911 provided on the printed wiring board 910 via a solder ball 905. Note that various methods such as thermocompression bonding, thermocompression bonding with ultrasonic vibration, and the like can be used for connection between the solder ball 905 and the wiring or electrode 911. It should be noted that the gap between the solder balls after pressure bonding may be filled with underfill to increase the mechanical strength of the connecting portion and the efficiency of diffusion of heat generated in the package. The underfill is not necessarily used, but connection failure can be prevented from occurring due to a stress caused by a mismatch between the thermal expansion coefficients of the interposer and the chip. When crimping by applying ultrasonic waves, poor connection can be suppressed as compared to the case of simply thermocompression bonding.

  In this embodiment, the package in which the chip is connected to the interposer by the wire bonding method is shown, but the present invention is not limited to this. These may be connected using a flip chip method. In this case, even if the number of pads to be connected is increased, a relatively wide pitch between the pads can be secured as compared with the wire bonding method, which is suitable for connection of a chip having a large number of terminals.

  Further, chips may be stacked in the package. In this case, since a plurality of chips can be provided in one package, there is an advantage that the size of the entire package can be suppressed.

  Furthermore, a plurality of packages may be stacked. This structure has an advantage that the yield can be increased because electrical inspection is performed for each package and only good products can be selected and stacked.

  According to the present invention, a highly integrated semiconductor device with high yield can be manufactured.

  In this embodiment, a display device which is an example of a semiconductor device including a semiconductor element formed using the present invention will be described.

    A semiconductor element formed using the present invention is a liquid crystal display device, a light emitting device including a light emitting element typified by an organic light emitting element in each pixel, DMD (Digital Micromirror Device), PDP (Plasma Display Panel), FED (Field). It can be used for various circuits for controlling driving of a display device such as an Emission Display.

  The semiconductor element shown in this embodiment has ultrafine carbon fibers in a channel formation region and is stacked in the vertical direction with respect to the substrate surface. Therefore, the semiconductor device is a highly integrated semiconductor element having a high switching speed.

Various electronic devices can be manufactured by incorporating a semiconductor device obtained by implementing the present invention. Electronic devices include video cameras, digital cameras, goggles-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook-type personal computers, game machines, and portable information terminals (mobile computers, A mobile phone, a portable game machine, an electronic book, etc.), and an image playback apparatus (specifically, a digital versatile disc (DVD)) provided with a recording medium, and a display capable of displaying the image Apparatus). A car navigation which is one of electronic devices is taken as an example, and FIG. 11A shows a state in which the element of the present invention is actually mounted on an electronic device.

  A display unit module of the navigation system illustrated in FIG. 11A includes a pixel portion 1102 on a substrate, a scanning line driver circuit 1103 for controlling display of the pixel portion, a signal line driver circuit 1104, a control circuit 1105, and an audio circuit 1106. A video signal processing circuit 1107, an SRAM 1108, and the like are provided. In this embodiment, the substrate 1101 is a glass substrate.

  Further, it is connected to an external printed wiring board by the FPC 1109.

FIG. 11B shows a block diagram of each circuit formed over the substrate 1001. Note that a circuit in the case where a liquid crystal element is formed in the pixel portion 1102 is described. The pixel portion 1102 has a gradation power supply 1111. A scan line driver circuit 1103 and a signal line driver circuit 1104 are provided around the pixel portion 1102. Note that the pixel portion 1102 may use a light-emitting element, a DMD element, a field emission element, or the like.

The control circuit 1105 includes a CPU 1112, a CPU interface (I / F) 1113, a WRAM 1114 functioning as a stack / variable SRAM used by the CPU, a PROM 1115 functioning as a mask ROM storing programs and image data, a PROM and a WRAM. And a memory controller 1116 having a function of decoding a part of the WRAM address and generating a signal for controlling the audio circuit.

The audio circuit 1106 includes an audio ROM 1121 functioning as a mask ROM storing audio data, an audio controller 1122 having a function of generating a clock signal of the audio circuit, and generating an address of the audio ROM using a counter, An amplifier 1123 having a function of creating an analog waveform from digital audio data and amplifying the analog waveform is provided.

The video signal processing circuit 1107 includes a CRAM 1131 that functions as an SRAM that stores color information of image data.

Further, an SRAM 1108 for storing image coordinate information and image information for one line of the image is provided.

Each circuit having these functions is supplied with power from a power supply circuit provided on a printed board (not shown) via the FPC 1109.

  Also, an input signal from an externally provided keyboard, signals such as a memory, a clock, a speaker, and a power source are input / output via the FPC 1109.

  Since the semiconductor element manufactured according to the present invention can operate finely and at high speed, high-definition display can be achieved by applying the present invention to the manufacturing of the semiconductor element of each circuit shown in FIG. It is possible to produce a navigation system having a small response deviation.

Sectional drawing explaining the semiconductor element which concerns on this invention. Sectional drawing explaining the semiconductor element which concerns on this invention. Sectional drawing explaining the semiconductor element which concerns on this invention. Sectional drawing explaining the semiconductor element which concerns on this invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a semiconductor element according to the present invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a semiconductor element according to the present invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a semiconductor element according to the present invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a semiconductor element according to the present invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. FIG. 14 is a cross-sectional view illustrating an electronic device according to the invention. Sectional drawing explaining the semiconductor element which concerns on this invention. Sectional drawing explaining the semiconductor element which concerns on this invention. Sectional drawing explaining the semiconductor element which concerns on this invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a semiconductor element according to the present invention.

Claims (26)

A source region, a channel formation region, and a drain region stacked in the thickness direction of the substrate;
A gate electrode overlapping with the channel formation region via an insulating film;
The channel formation region is formed of an ultrafine carbon fiber. A semiconductor device in which a semiconductor element is formed on a substrate surface,
The semiconductor element includes a source region, a channel formation region, and a drain region stacked in contact with a vertical direction of the substrate surface, a gate insulating film formed on a side surface of the channel formation region, and the gate insulating film. And a gate electrode formed on the opposite side of the channel formation region,
The channel formation region is formed of an ultrafine carbon fiber.   3. The semiconductor device according to claim 1, wherein the ultrafine carbon fiber is surrounded by a member that fills the ultrafine carbon fiber.   4. The semiconductor device according to claim 3, wherein the member filled with the ultrafine carbon fiber is made of the semiconductor material.   4. The semiconductor device according to claim 3, wherein the member filling the ultrafine carbon fiber is formed of an insulating material.   6. The semiconductor device according to claim 5, wherein the member filled with the ultrafine carbon fiber is a gate insulating film.   7. The semiconductor device according to claim 1, wherein the channel formation region is formed of a single ultrafine carbon fiber.   7. The semiconductor device according to claim 1, wherein the channel formation region is formed of a plurality of ultrafine carbon fibers.   9. The semiconductor device according to claim 1, wherein a region containing a metal element is formed between the source region or the drain region and the ultrafine carbon fiber.   10. The region containing the metal element according to claim 1, wherein the region containing the metal element is an element selected from nickel, iron, cobalt, platinum, germanium, titanium, palladium, or zinc, or a main component of the element. A semiconductor device characterized by being an alloy material or a compound.   11. The semiconductor device according to claim 1, wherein the gate electrode surrounds the channel formation region.   12. The semiconductor device according to claim 1, wherein the channel formation region includes a plurality of channel formation regions.   11. The semiconductor device according to claim 1, wherein the gate electrode overlaps a part of the channel formation region.   11. The semiconductor device according to claim 1, wherein the gate electrode includes a plurality of gate electrodes and a part of the channel formation region is overlapped.   15. The semiconductor device according to claim 1, wherein the substrate is a single crystal silicon substrate or a compound semiconductor substrate.   15. The semiconductor according to claim 1, wherein the substrate is made of glass, quartz, plastic, alumina, ceramic, or a conductive member having an insulating film formed on a surface thereof. apparatus.   17. The ultrafine carbon fiber according to claim 1, wherein the ultrafine carbon fiber is graphite nanofiber, carbon nanofiber, carbon nanotube, tubular graphite, carbon nanocone, or cone-shaped graphite. Semiconductor device. A region including a metal element is selectively formed over the first region having conductivity,
Forming an ultrafine carbon fiber on the region containing the metal element;
Forming an insulating film surrounding the ultrafine carbon fiber;
Forming a gate electrode in contact with an insulating film surrounding the ultrafine carbon fiber;
A method for manufacturing a semiconductor device, wherein the second region having conductivity connected to the ultrafine carbon fiber is formed. Forming a gate electrode over the first region having conductivity through the first insulating film;
Forming a second insulating film covering the surface of the gate electrode;
After removing a part of the first insulating film to expose the first region having conductivity, a region having a metal element is formed on the first region having conductivity.
Forming an ultrafine carbon fiber on the region having the metal element;
A method for manufacturing a semiconductor device, comprising: forming a member that fills a space between the ultrafine carbon fibers, and then forming a second region having conductivity connected to the ultrafine carbon fibers. A region including a metal element is selectively formed over the first region having conductivity,
After forming ultrafine carbon fibers on the region containing the metal element, a semiconductor film is formed,
The semiconductor film is filled with a member formed of a semiconductor material between the ultrafine carbon fibers by irradiating a laser beam,
After removing a part of the member formed of the semiconductor material,
Forming an insulating film surrounding the ultrafine carbon fiber;
Forming a gate electrode in contact with an insulating film surrounding the ultrafine carbon fiber;
A method for manufacturing a semiconductor device, comprising forming a second region having conductivity connected to the ultrafine carbon fiber. Forming a gate electrode over the first region having conductivity through the first insulating film;
Forming a second insulating film covering the surface of the gate electrode;
After removing a part of the first insulating film to expose the first region having conductivity, a region having a metal element is formed on the first region having conductivity.
After forming ultrafine carbon fiber on the region having the metal element, a semiconductor film is formed,
After irradiating the semiconductor film with laser light and filling the space between the ultrafine carbon fibers with a member formed of a semiconductor material, a part of the semiconductor film is removed,
Forming a third insulating film on the semiconductor film and the gate electrode;
A method for manufacturing a semiconductor device, comprising: removing a part of the third insulating film to expose the ultrafine carbon fiber; and forming a second region having conductivity.   24. The method for manufacturing a semiconductor device according to claim 20, wherein the laser light is laser light emitted from a continuous wave laser. 23. The continuous wave laser according to claim 22, wherein the continuous wave laser is an Nd: YAG laser, an Nd: YVO ₄ laser, an Nd: YLF laser, an Nd: YAlO ₃ laser, a glass laser, a ruby laser,
A method for manufacturing a semiconductor device, which is an Alexandride laser or a Ti: sapphire laser.   24. The region containing the metal element according to any one of claims 18 to 23, an element selected from nickel, iron, cobalt, platinum, germanium, titanium, or palladium, or the element as a main component. A semiconductor device characterized by being an alloy material or a compound.   25. The semiconductor device according to claim 18, wherein the first region having conductivity and the second region having conductivity are a source region and a drain region. Manufacturing method. 26. The ultrafine carbon fiber according to any one of claims 18 to 25, wherein the ultrafine carbon fiber is a graphite nanofiber, a carbon nanofiber, a carbon nanotube, a tube-like graphite, a carbon nanocone, or a cone-like graphite. Semiconductor device.

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