JP4762522B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4762522B2
JP4762522B2 JP2004312684A JP2004312684A JP4762522B2 JP 4762522 B2 JP4762522 B2 JP 4762522B2 JP 2004312684 A JP2004312684 A JP 2004312684A JP 2004312684 A JP2004312684 A JP 2004312684A JP 4762522 B2 JP4762522 B2 JP 4762522B2
Authority
JP
Japan
Prior art keywords
region
ultrafine carbon
semiconductor
insulating film
carbon fiber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004312684A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005159332A (ja
JP2005159332A5 (enExample
Inventor
舜平 山崎
幸恵 根本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004312684A priority Critical patent/JP4762522B2/ja
Publication of JP2005159332A publication Critical patent/JP2005159332A/ja
Publication of JP2005159332A5 publication Critical patent/JP2005159332A5/ja
Application granted granted Critical
Publication of JP4762522B2 publication Critical patent/JP4762522B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004312684A 2003-10-28 2004-10-27 半導体装置の作製方法 Expired - Fee Related JP4762522B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004312684A JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003368159 2003-10-28
JP2003368159 2003-10-28
JP2004312684A JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010271734A Division JP5250615B2 (ja) 2003-10-28 2010-12-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2005159332A JP2005159332A (ja) 2005-06-16
JP2005159332A5 JP2005159332A5 (enExample) 2007-11-22
JP4762522B2 true JP4762522B2 (ja) 2011-08-31

Family

ID=34741101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004312684A Expired - Fee Related JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4762522B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
JP4568286B2 (ja) * 2004-10-04 2010-10-27 パナソニック株式会社 縦型電界効果トランジスタおよびその製造方法
US8890117B2 (en) 2007-03-28 2014-11-18 Qunano Ab Nanowire circuit architecture
KR101553414B1 (ko) * 2007-07-03 2015-09-15 파나소닉 주식회사 반도체 장치와 그 제조 방법 및 화상 표시 장치
EP2263273B1 (en) * 2008-04-11 2012-05-16 Sandisk 3D LLC Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
JP2011187901A (ja) 2010-03-11 2011-09-22 Canon Inc 半導体デバイスの製造方法
JP6250210B2 (ja) * 2017-04-11 2017-12-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
CN113471298A (zh) * 2021-06-23 2021-10-01 Tcl华星光电技术有限公司 薄膜晶体管、显示面板及电子设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법

Also Published As

Publication number Publication date
JP2005159332A (ja) 2005-06-16

Similar Documents

Publication Publication Date Title
JP4689218B2 (ja) 半導体装置の作製方法
KR101013482B1 (ko) 반도체 장치 및 그의 제작방법
US7067926B2 (en) Semiconductor chip and method for manufacturing the same
CN101009241B (zh) 制造布线和显示器件的方法
US6911675B2 (en) Active matrix display device and manufacturing method thereof
TWI330396B (en) Semiconductor device and method for manufacturing the same
US7655560B2 (en) Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP4762522B2 (ja) 半導体装置の作製方法
JP5250615B2 (ja) 半導体装置
CN101635261B (zh) 半导体器件及其制造方法
JP4408042B2 (ja) 半導体装置及びその作製方法
JP4850168B2 (ja) 半導体装置
JP2005072573A (ja) 配線基板及びその作製方法、並びに半導体装置及びその作製方法
US7923293B2 (en) Method for manufacturing a semiconductor device wherein the electrical connection between two components is provided by capillary phenomenon of a liquid conductor material in a cavity therebetween
JP2005056985A (ja) 半導体装置の製造方法、半導体装置および電子機器
JP4646531B2 (ja) 薄膜トランジスタ及びその作製方法、並びに前記薄膜トランジスタを用いた電子機器
US20090141009A1 (en) LCD Driver IC and Method for Manufacturing the Same
JP4879467B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071010

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071010

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101116

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20101119

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110412

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110518

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110607

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110608

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140617

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140617

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees