JP2005154771A - 分子多面体型シルセスキオキサンを用いた半導体層間絶縁膜の形成方法 - Google Patents
分子多面体型シルセスキオキサンを用いた半導体層間絶縁膜の形成方法 Download PDFInfo
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- JP2005154771A JP2005154771A JP2004339133A JP2004339133A JP2005154771A JP 2005154771 A JP2005154771 A JP 2005154771A JP 2004339133 A JP2004339133 A JP 2004339133A JP 2004339133 A JP2004339133 A JP 2004339133A JP 2005154771 A JP2005154771 A JP 2005154771A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000011229 interlayer Substances 0.000 title claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 53
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000011347 resin Substances 0.000 claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 32
- 239000000178 monomer Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims description 43
- 239000002904 solvent Substances 0.000 claims description 41
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 34
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 21
- 125000005843 halogen group Chemical group 0.000 claims description 20
- 239000011148 porous material Substances 0.000 claims description 19
- 125000003545 alkoxy group Chemical group 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 15
- 125000000524 functional group Chemical group 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000003960 organic solvent Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims description 12
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 8
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 8
- 125000003342 alkenyl group Chemical group 0.000 claims description 8
- 125000000304 alkynyl group Chemical group 0.000 claims description 8
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical group COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 8
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 238000012643 polycondensation polymerization Methods 0.000 claims description 7
- -1 polyethylene Polymers 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229920000858 Cyclodextrin Polymers 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- 239000003377 acid catalyst Substances 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 4
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical group CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- 150000001338 aliphatic hydrocarbons Chemical group 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 4
- 229920001400 block copolymer Polymers 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 4
- 229920001610 polycaprolactone Polymers 0.000 claims description 4
- 239000004632 polycaprolactone Substances 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 239000008096 xylene Substances 0.000 claims description 4
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 3
- 125000006832 (C1-C10) alkylene group Chemical group 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 2
- 229940092714 benzenesulfonic acid Drugs 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 3
- 150000002576 ketones Chemical class 0.000 claims 3
- 239000011827 silicon-based solvent Substances 0.000 claims 3
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 56
- 229920000642 polymer Polymers 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000010409 thin film Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910008051 Si-OH Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910006358 Si—OH Inorganic materials 0.000 description 6
- 230000007062 hydrolysis Effects 0.000 description 6
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000003361 porogen Substances 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical group CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000001116 FEMA 4028 Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- MVIOINXPSFUJEN-UHFFFAOYSA-N benzenesulfonic acid;hydrate Chemical compound O.OS(=O)(=O)C1=CC=CC=C1 MVIOINXPSFUJEN-UHFFFAOYSA-N 0.000 description 1
- 229960004853 betadex Drugs 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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Abstract
【解決手段】 分子多面体型シルセスキオキサンをシロキサン系樹脂の単量体として使用し、または分子多面体型シルセスキオキサン自体を気孔形成物質として用いて絶縁膜形成用組成物を製造した後、これを用いて絶縁膜を形成する。
【選択図】 図2
Description
本発明の他の態様においては、前記製造されたシロキサン系樹脂及び有機溶媒を含む絶縁膜形成用組成物が提供される。
次に、前記分子多面体型シルセスキオキサンがシロキサン系樹脂の重合に使用される過程についてより具体的に説明する。すなわち、前記化学式2の分子多面体型シルセスキオキサンを、単独で使用し、或いは下記化学式3〜6で表される化合物からなる群より選択される1種以上のシラン系単量体と混合し、有機溶媒内で水と酸触媒または塩基触媒との存在下で縮重合してシロキサン系樹脂を製造する。
前記分子多面体型シルセスキオキサンの具体的化合物の基本構造としては、下記化学式7で表われるような構造を挙げることができる。
(1)誘電率測定:
ホウ素がドープされたp型のシリコンウェーハ上にシリコン熱酸化膜を3000Åの厚さに塗布し、金属蒸着器で、チタニウム100Å、アルミニウム2000Å、チタニウム100Åを蒸着した。その後、その上に測定対象絶縁膜を形成した。前記絶縁膜上に電極直径が1mmに設計されたハードマスクを用いて直径1mmの円形のチタニウム100Å及びアルミニウム薄膜5000Åを蒸着してMIM(metal−insulator−metal)構造の誘電率測定用低誘電薄膜を完成した。完成された薄膜をProbe station(micromanipulator 6200 probe station)付きPRECISION LCR METER(HP4284A)を用いて約10kHz、100kHz及び1MHzの周波数で静電容量を測定し、プリズムカプラを用いて薄膜の厚さを測定した後、数式1から誘電率を求めた。
(2)硬度(hardness)及び弾性係数(modulus):
硬度及び弾性係数は、MTS社のナノインデンタIIを用いて絶縁膜を定量的に分析して決定した。より詳しくは、薄膜をナノインデンタで圧入し、圧入深さが薄膜厚さの10%であるとき、薄膜の硬度と弾性係数を求めた。薄膜の厚さはプリズムカプラを用いて測定した。本実施例では信頼度を確保するために、絶縁膜上の9ヶ所を圧入して平均値からそれぞれの硬度及び弾性係数を求めた。
製造例1
乾燥させたフラスコに硫酸(H2SO4)80gと15%のSO3が含まれた発煙硫酸をベンゼン200mLによく混ぜた後、素早く撹拌しながら6時間徐々にトリクロロシラン12.7g(0.094mmol)を仕込んだ。トリクロロシランの添加が終了したら、有機層を50%のH2SO4溶液で数回洗浄し、さらに蒸留水で洗浄した。有機層に溶解されない物質と除去されない物質を無くすために、フィルターリングを行った後、有機層を濃縮して4.8gのn=12、14、16の分子多面体型シルセスキオキサン前駆体(前記化学式8)を得た。このように得た混合物は昇華法によってそれぞれを分離した。
前記製造例1で収得したn=14の[Si14O21]H141gをフラスコに仕込み、メタノール20mLに溶かした後、Pd/C0.1gを仕込んで常温で8時間反応させることにより[Si14O21]OMe140.8gを得た。
製造例3
前記製造例1で収得した単量体[Si14O21]H145gをフラスコに仕込み、溶液全体の濃度が0.05〜0.07Mとなるようにベンゼンを入れて希釈させた後、前記フラスコにPtCl2触媒を0.01mmol%添加し、その後常温で12時間反応を行った。反応が完結した後、溶液からセライトを用いて触媒を除去し、これを気孔0.2μmのフィルターで濾過した後、溶媒を除去した。前記白色粉末を0〜20℃の温度及び0.9torrの圧力下で4時間乾燥させてシロキサン系重合体「以下、「(a−1)」という」3.5gを得た。前記重合体におけるSi−OH含量およびSi−CH3含量は、それぞれ38.70%、61.30%であった。
溶媒としてベンゼンの代わりにテトラヒドロフランを使用した以外は、前記製造例3と同様の方法で常温で6時間反応せた後、2,4,6,8−テトラメチル−2,4,6,8−テトラキス(トリメトキシシリル)シクロシロキサン5gをフラスコに仕込み、反応液の温度を−78℃にした。前記フラスコに塩酸0.484mmolと水241.2mmolをそれぞれ添加した後、反応液の温度を−78℃から70℃に徐々に昇温して6時間反応を行った。反応溶液を分別漏斗に移した後、最初仕込んだテトラヒドロフランと同量のジエチルエーテルとテトラヒドロフランを添加し、溶媒全体の1/8程度の水で3回洗い出した後、減圧下で揮発性物質を除去して白色粉末タイプの重合体を得た。前記方法で得た重合体をテトラヒドロフランに溶解させて透明な溶液を作り、これを気孔0.2μmのフィルターで濾過した後、濾液に水を徐々に添加して白色粉末の沈殿を収得した。前記白色粉末を0〜20℃の温度及び0.9torrの圧力下で8時間乾燥させてシロキサン系重合体(以下、「a−2」という)6.2gを得た。前記重合体におけるSi−OH含量およびSi−OCH3含量及びSi−CH3含量はそれぞれ39.50%、0.65%及び59.85%であった。
2,4,6,8−テトラメチル−2,4,6,8−テトラキス(トリメトキシシリル)シクロシロキサン(T4Q4)及び非環式アルコキシシラン単量体としてメチルトリメトキシシラン(MTMS、Aaldrich社製造)を使用した以外は、製造例4と同様の方法によって重合体(以下、「(a−3)」という)を製造した。重合体製造時に使用された各単量体の量、使用したHCl及び水の量は表1に示す通りである。一方、それぞれ収得した重合体の量、Si−OH含量、Si−OCH3含量、及びSi−CH3含量も表1に示した。
シロキサン系重合体として前記重合体(a−3)0.207g、気孔形成物質として製造例1の分子多面体型シルセスキオキサン(n=14)0.046gを使用し、溶媒としてプロピレングリコールメチルエーテルアセテートを使用して固形分含量24質量%のコーティング液を製造した。前記コーティング液を2000rpmで30秒間シリコンウェーハ上にスピンコーティングを行い、窒素雰囲気のホットプレート上で、150℃で1分間、そして250℃で1分間予備加熱して乾燥させることによりフィルムを製造した。前記フィルムを真空雰囲気、420℃(昇温速度:3℃/min)で1時間熱処理して絶縁膜C−1を製造した。製造された絶縁膜の厚さ、屈折率、誘電率、硬度、弾性係数及び炭素含量を測定した。結果を表2に示す。
シロキサン系重合体として前記重合体(a−3)0.459gに気孔形成物質を使用せず、溶媒としてプロピレングリコールメチルエーテルアセテートを使用して固形分含量24質量%のコーティング液を製造した以外は、前記実施例1と同様の方法で絶縁膜(C−2)を製造した。製造された絶縁膜の厚さ、屈折率、誘電率、硬度、弾性係数及び炭素含量を測定した。結果を表2に示す。
シロキサン系重合体として前記重合体(a−3)0.413g及び気孔形成物質としてヘプタキス[2,3,6−トリ−メトキシ]−β−シクロデキストリン0.046gを使用した以外は、前記実施例1と同様の方法で絶縁膜(C−3)を製造した。製造された絶縁膜の厚さ、屈折率、誘電率、硬度、弾性係数及び炭素含量を測定した。結果を表2に示す。
Claims (21)
- 下記化学式2で表わされる1種以上の分子多面体型シルセスキオキサンを、単独で使用し、または下記化学式3、4、5及び6で表わされる化合物からなる群より選択される1種以上の単量体と混合し、有機溶媒内で水と酸触媒または塩基触媒との存在下で縮重合して製造されるシロキサン系樹脂。
- 前記酸触媒は、塩酸、硝酸、ベンゼンスルホン酸、シュウ酸、蟻酸またはこれらの混合物であり、前記塩基触媒は水酸化カリウム、水酸化ナトリウム、トリエチルアミン、炭酸水素ナトリウム、ピリジンまたはこれらの混合物であることを特徴とする請求項1記載のシロキサン系樹脂。
- 全単量体と使用される酸触媒または塩基触媒とのモル比は、1:1×10−5〜1:10であることを特徴とする請求項1記載のシロキサン系樹脂。
- 全単量体と使用される水とのモル比は、1:1〜1:100であることを特徴とする請求項1記載のシロキサン系樹脂。
- 前記重合反応は0〜200℃の温度で0.1〜100時間行われることを特徴とする請求項1記載のシロキサン系樹脂。
- 前記有機溶媒は、ヘキサンまたはヘプタンである脂肪族炭化水素溶媒;アニソール、メシチレン、キシレン、ベンゼンである芳香族炭化水素溶媒;メチルイソブチルケトン、1−メチル−2−ピロリジノン、シクロヘキサノンまたはアセトンであるケトン系溶媒;テトラヒドロフランまたはイソプロピルエーテルであるエーテル系溶媒;エチルアセテート、ブチルアセテートまたはプロピレングリコールメチルエーテルアセテートであるアセテート系溶媒;イソプロピルアルコールまたはブチルアルコールであるアルコール系溶媒;ジメチルアセトアミドまたはジメチルホルムアミドであるアミド系溶媒;シリコン系溶媒;または前記溶媒の混合物であることを特徴とする請求項1記載のシロキサン系樹脂。
- 前記シロキサン系樹脂の重量平均分子量は1,000〜300,000であることを特徴とする請求項1記載のシロキサン系樹脂。
- 請求項1記載のシロキサン系樹脂、及び有機溶媒を含む絶縁膜形成用組成物。
- 前記溶媒は、ヘキサンまたはヘプタンである脂肪族炭化水素溶媒;アニソール、メシチレン、キシレン、ベンゼンである芳香族炭化水素溶媒;メチルイソブチルケトン、1−メチル−2−ピロリジノン、シクロヘキサノンまたはアセトンであるケトン系溶媒;テトラヒドロフランまたはイソプロピルエーテルであるエーテル系溶媒;エチルアセテート、ブチルアセテートまたはプロピレングリコールメチルエーテルアセテートであるアセテート系溶媒;イソプロピルアルコールまたはブチルアルコールであるアルコール系溶媒;ジメチルアセトアミドまたはジメチルホルムアミドであるアミド系溶媒;シリコン系溶媒;または前記溶媒の混合物であることを特徴とする請求項8記載の絶縁膜形成用組成物。
- 前記絶縁膜形成用組成物は、さらに、シクロデキストリン、ポリカプロラクトン、Brij系界面活性剤、ポリエチレングリコール−ポリプロピレングリコール−ポリエチレングリコールの三元ブロック共重合体系界面活性剤及びこれらの誘導体からなる群より選択される気孔形成物質を含むことを特徴とする請求項8記載の絶縁膜形成用組成物。
- 下記化学式2で表わされる1種以上の分子多面体型シルセスキオキサン、熱的に安定したシロキサン前駆体、及びこれらを溶解させる溶媒を含む絶縁膜形成用組成物。
- 前記熱的に安定したシロキサン前駆体は、化学式3、4、5及び6で表わされる化合物からなる群より選択される1種以上の単量体を混合して有機溶媒内で水と酸触媒または塩基触媒との存在下で縮重合して製造されることを特徴とする請求項11記載の絶縁膜形成用組成物。
- 前記絶縁膜形成用組成物は、さらにシクロデキストリン、ポリカプロラクトン、Brij系界面活性剤、ポリエチレングリコール−ポリプロピレングリコール−ポリエチレングリコールの三元ブロック共重合体系界面活性剤及びこれらの誘導体からなる群より選択される気孔形成物質を含むことを特徴とする請求項11記載の絶縁膜形成用組成物。
- 前記分子多面体型シルセスキオキサンは、組成物中の総固形分に対して0.1〜99.9質量%含まれることを特徴とする請求項11〜13のいずれか1項に記載の絶縁膜形成用組成物。
- 前記溶媒は、ヘキサンまたはヘプタンである脂肪族炭化水素溶媒;アニソール、メシチレン、キシレン、またはベンゼンである芳香族炭化水素溶媒;メチルイソブチルケトン、1−メチル−2−ピロリジノン、シクロヘキサノンまたはアセトンであるケトン系溶媒;テトラヒドロフランまたはイソプロピルエーテルであるエーテル系溶媒;エチルアセテート、ブチルアセテートまたはプロピレングリコールメチルエーテルアセテートであるアセテート系溶媒;イソプロピルアルコールまたはブチルアルコールであるアルコール系溶媒;ジメチルアセトアミドまたはジメチルホルムアミドであるアミド系溶媒;シリコン系溶媒;または前記溶媒の混合物であることを特徴とする請求項11記載の絶縁膜形成用組成物。
- 前記組成物の固形分の含量は、組成物全体に対して5〜70質量%であることを特徴とする請求項11〜13のいずれか1項に記載の絶縁膜形成用組成物。
- 請求項8または11に記載の組成物を製造する段階と、前記組成物を基板上にコーティングし熱硬化させる段階とを含むことを特徴とする半導体層間絶縁膜の形成方法。
- 前記絶縁膜形成用組成物は、さらにシクロデキストリン、ポリカプロラクトン、Brij系界面活性剤、ポリエチレングリコール−ポリプロピレングリコール−ポリエチレングリコールの三元ブロック共重合体系界面活性剤及びこれらの誘導体からなる群より選択される気孔形成物質を含むことを特徴とする請求項17記載の半導体層間絶縁膜の形成方法。
- 前記コーティングは、スピンコーティング、ディップコーティング、スプレーコーティング、フローコーティング、またはスクリーン印刷によって行われることを特徴とする請求項17記載の半導体層間絶縁膜の形成方法。
- 前記熱硬化は150℃〜600℃の温度で1〜180分間行うことを特徴とする請求項17記載の半導体層間絶縁膜の形成方法。
- 請求項17の方法で形成された半導体層間絶縁膜。
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