JP2005136394A5 - - Google Patents

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Publication number
JP2005136394A5
JP2005136394A5 JP2004292643A JP2004292643A JP2005136394A5 JP 2005136394 A5 JP2005136394 A5 JP 2005136394A5 JP 2004292643 A JP2004292643 A JP 2004292643A JP 2004292643 A JP2004292643 A JP 2004292643A JP 2005136394 A5 JP2005136394 A5 JP 2005136394A5
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JP
Japan
Prior art keywords
semiconductor
semiconductor device
insulating film
substrate
semiconductor element
Prior art date
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Application number
JP2004292643A
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English (en)
Japanese (ja)
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JP2005136394A (ja
JP4481135B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2004292643A priority Critical patent/JP4481135B2/ja
Priority claimed from JP2004292643A external-priority patent/JP4481135B2/ja
Publication of JP2005136394A publication Critical patent/JP2005136394A/ja
Publication of JP2005136394A5 publication Critical patent/JP2005136394A5/ja
Application granted granted Critical
Publication of JP4481135B2 publication Critical patent/JP4481135B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004292643A 2003-10-06 2004-10-05 半導体装置及びその作製方法 Expired - Fee Related JP4481135B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004292643A JP4481135B2 (ja) 2003-10-06 2004-10-05 半導体装置及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003347676 2003-10-06
JP2004292643A JP4481135B2 (ja) 2003-10-06 2004-10-05 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2005136394A JP2005136394A (ja) 2005-05-26
JP2005136394A5 true JP2005136394A5 (OSRAM) 2007-08-16
JP4481135B2 JP4481135B2 (ja) 2010-06-16

Family

ID=34655940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004292643A Expired - Fee Related JP4481135B2 (ja) 2003-10-06 2004-10-05 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP4481135B2 (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4532418B2 (ja) * 2005-02-18 2010-08-25 株式会社半導体エネルギー研究所 光センサ及びその作製方法
US7492028B2 (en) 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
EP1724844A2 (en) 2005-05-20 2006-11-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device, manufacturing method thereof and semiconductor device
EP1727120B1 (en) 2005-05-23 2008-07-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP5082036B2 (ja) * 2005-10-31 2012-11-28 株式会社リキッド・デザイン・システムズ 半導体装置の製造方法および半導体装置
WO2007125977A1 (en) 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8207589B2 (en) * 2007-02-15 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
JP2008270757A (ja) 2007-03-26 2008-11-06 Semiconductor Energy Lab Co Ltd 半導体装置
KR101423055B1 (ko) * 2007-04-18 2014-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP6368921B2 (ja) 2013-10-01 2018-08-08 パナソニックIpマネジメント株式会社 半導体装置
TWI656631B (zh) * 2014-03-28 2019-04-11 日商半導體能源研究所股份有限公司 攝像裝置
CN107112315B (zh) * 2015-01-16 2019-03-29 雫石诚 半导体器件及其制造方法
JP2021072583A (ja) 2019-10-31 2021-05-06 株式会社村田製作所 高周波モジュール及び通信装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326618A (ja) * 1992-05-15 1993-12-10 Rohm Co Ltd 半導体装置
JP3393842B2 (ja) * 1992-09-11 2003-04-07 株式会社半導体エネルギー研究所 光電変換装置の作製方法
JP3507251B2 (ja) * 1995-09-01 2004-03-15 キヤノン株式会社 光センサicパッケージおよびその組立方法
JP3725266B2 (ja) * 1996-11-07 2005-12-07 株式会社半導体エネルギー研究所 配線形成方法
JP3523815B2 (ja) * 1999-08-30 2004-04-26 シャープ株式会社 半導体装置
JP2001036097A (ja) * 2000-01-01 2001-02-09 Semiconductor Energy Lab Co Ltd 半導体装置

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