JP2005129909A - 光センサー装置および電子機器 - Google Patents

光センサー装置および電子機器 Download PDF

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Publication number
JP2005129909A
JP2005129909A JP2004269801A JP2004269801A JP2005129909A JP 2005129909 A JP2005129909 A JP 2005129909A JP 2004269801 A JP2004269801 A JP 2004269801A JP 2004269801 A JP2004269801 A JP 2004269801A JP 2005129909 A JP2005129909 A JP 2005129909A
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Japan
Prior art keywords
optical sensor
amplifier circuit
tft
photodiode
sensor device
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Application number
JP2004269801A
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English (en)
Japanese (ja)
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JP2005129909A5 (https=
Inventor
Jun Koyama
潤 小山
Takeshi Nagata
剛 長多
Takanori Matsuzaki
隆徳 松嵜
Kazuo Nishi
和夫 西
Junya Maruyama
純矢 丸山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004269801A priority Critical patent/JP2005129909A/ja
Publication of JP2005129909A publication Critical patent/JP2005129909A/ja
Publication of JP2005129909A5 publication Critical patent/JP2005129909A5/ja
Withdrawn legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2004269801A 2003-09-19 2004-09-16 光センサー装置および電子機器 Withdrawn JP2005129909A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004269801A JP2005129909A (ja) 2003-09-19 2004-09-16 光センサー装置および電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003327629 2003-09-19
JP2003342632 2003-09-30
JP2004269801A JP2005129909A (ja) 2003-09-19 2004-09-16 光センサー装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010244928A Division JP5542259B2 (ja) 2003-09-19 2010-11-01 光センサー装置

Publications (2)

Publication Number Publication Date
JP2005129909A true JP2005129909A (ja) 2005-05-19
JP2005129909A5 JP2005129909A5 (https=) 2007-10-25

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ID=34657715

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JP2004269801A Withdrawn JP2005129909A (ja) 2003-09-19 2004-09-16 光センサー装置および電子機器

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JP (1) JP2005129909A (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227476A (ja) * 2007-02-15 2008-09-25 Semiconductor Energy Lab Co Ltd 光電変換装置及び電子機器、並びに光電変換装置の作製方法
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP2009246347A (ja) * 2008-03-14 2009-10-22 Semiconductor Energy Lab Co Ltd 半導体装置
US7622785B2 (en) 2006-04-28 2009-11-24 Semiconductor Laboratory Co., Ltd. Photoelectric conversion element and manufacturing method of photoelectric conversion element
US8053717B2 (en) 2008-05-22 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device having a reference voltage generation circuit with a resistor and a second diode element and electronic device having the same
US8053816B2 (en) 2006-03-10 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8431883B2 (en) 2007-06-29 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device comprising a current mirror circuit connected to a field effect transistor, a buffer and a voltage detection circuit
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置
US8610226B2 (en) 2009-12-28 2013-12-17 Sharp Kabushiki Kaisha Photosensor element, photosensor circuit, thin-film transistor substrate, and display panel
US8614493B2 (en) 2009-12-25 2013-12-24 Sharp Kabushiki Kaisha Photosensor element, photosensor circuit, thin film transistor substrate, display panel, and method for manufacturing photosensor element
KR101387370B1 (ko) 2007-03-26 2014-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014222226A (ja) * 2008-09-04 2014-11-27 株式会社半導体エネルギー研究所 光検出回路

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62124770A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Works Ltd 半導体デバイス
JPH01257368A (ja) * 1988-04-07 1989-10-13 Seiko Epson Corp カラーイメージセンサ
JPH01289381A (ja) * 1988-05-17 1989-11-21 Seiko Epson Corp 増幅型固体撮像装置
JPH04304011A (ja) * 1991-03-31 1992-10-27 Nec Corp アイソレータのインターフェース回路
JPH0629567A (ja) * 1992-07-13 1994-02-04 Nippon Telegr & Teleph Corp <Ntt> 受光回路
JPH11168670A (ja) * 1997-08-13 1999-06-22 Rockwell Sci Center Llc 単一光子読出回路
JPH11205247A (ja) * 1998-01-16 1999-07-30 Mitsubishi Electric Corp 光電変換回路
JP2003198268A (ja) * 2001-12-26 2003-07-11 Sharp Corp 受光アンプ回路
JP2003254826A (ja) * 2002-02-27 2003-09-10 Toshiba Corp 光検出回路

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62124770A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Works Ltd 半導体デバイス
JPH01257368A (ja) * 1988-04-07 1989-10-13 Seiko Epson Corp カラーイメージセンサ
JPH01289381A (ja) * 1988-05-17 1989-11-21 Seiko Epson Corp 増幅型固体撮像装置
JPH04304011A (ja) * 1991-03-31 1992-10-27 Nec Corp アイソレータのインターフェース回路
JPH0629567A (ja) * 1992-07-13 1994-02-04 Nippon Telegr & Teleph Corp <Ntt> 受光回路
JPH11168670A (ja) * 1997-08-13 1999-06-22 Rockwell Sci Center Llc 単一光子読出回路
JPH11205247A (ja) * 1998-01-16 1999-07-30 Mitsubishi Electric Corp 光電変換回路
JP2003198268A (ja) * 2001-12-26 2003-07-11 Sharp Corp 受光アンプ回路
JP2003254826A (ja) * 2002-02-27 2003-09-10 Toshiba Corp 光検出回路

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053816B2 (en) 2006-03-10 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8415664B2 (en) 2006-03-10 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012216872A (ja) * 2006-03-10 2012-11-08 Semiconductor Energy Lab Co Ltd 半導体装置
US7791154B2 (en) 2006-04-28 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and manufacturing method of photoelectric conversion element
US7622785B2 (en) 2006-04-28 2009-11-24 Semiconductor Laboratory Co., Ltd. Photoelectric conversion element and manufacturing method of photoelectric conversion element
US8154096B2 (en) 2006-04-28 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and manufacturing method of photoelectric conversion element
JP2008227476A (ja) * 2007-02-15 2008-09-25 Semiconductor Energy Lab Co Ltd 光電変換装置及び電子機器、並びに光電変換装置の作製方法
US8592936B2 (en) 2007-02-15 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
KR101387370B1 (ko) 2007-03-26 2014-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8431883B2 (en) 2007-06-29 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device comprising a current mirror circuit connected to a field effect transistor, a buffer and a voltage detection circuit
JP2009047688A (ja) * 2007-07-25 2009-03-05 Semiconductor Energy Lab Co Ltd 光電変換装置及びその光電変換装置を具備する電子機器
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8154480B2 (en) 2007-07-25 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8913050B2 (en) 2007-07-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP2009246347A (ja) * 2008-03-14 2009-10-22 Semiconductor Energy Lab Co Ltd 半導体装置
US8053717B2 (en) 2008-05-22 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device having a reference voltage generation circuit with a resistor and a second diode element and electronic device having the same
JP2014222226A (ja) * 2008-09-04 2014-11-27 株式会社半導体エネルギー研究所 光検出回路
US8614493B2 (en) 2009-12-25 2013-12-24 Sharp Kabushiki Kaisha Photosensor element, photosensor circuit, thin film transistor substrate, display panel, and method for manufacturing photosensor element
US8610226B2 (en) 2009-12-28 2013-12-17 Sharp Kabushiki Kaisha Photosensor element, photosensor circuit, thin-film transistor substrate, and display panel
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置
JPWO2013065668A1 (ja) * 2011-10-31 2015-04-02 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置
US9478691B2 (en) 2011-10-31 2016-10-25 Kyocera Corporation Light-receiving and emitting device including integrated light-receiving and emitting element and sensor

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