JP2005126757A - 化合物薄膜の製造装置および方法 - Google Patents
化合物薄膜の製造装置および方法 Download PDFInfo
- Publication number
- JP2005126757A JP2005126757A JP2003362626A JP2003362626A JP2005126757A JP 2005126757 A JP2005126757 A JP 2005126757A JP 2003362626 A JP2003362626 A JP 2003362626A JP 2003362626 A JP2003362626 A JP 2003362626A JP 2005126757 A JP2005126757 A JP 2005126757A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- compound thin
- substrate
- film forming
- vib
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003362626A JP2005126757A (ja) | 2003-10-23 | 2003-10-23 | 化合物薄膜の製造装置および方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003362626A JP2005126757A (ja) | 2003-10-23 | 2003-10-23 | 化合物薄膜の製造装置および方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005126757A true JP2005126757A (ja) | 2005-05-19 |
| JP2005126757A5 JP2005126757A5 (enExample) | 2006-11-02 |
Family
ID=34642192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003362626A Pending JP2005126757A (ja) | 2003-10-23 | 2003-10-23 | 化合物薄膜の製造装置および方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005126757A (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009069740A1 (ja) * | 2007-11-30 | 2009-06-04 | Tokyo Electron Limited | 成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 |
| JP2011060865A (ja) * | 2009-09-07 | 2011-03-24 | Optorun Co Ltd | リニア蒸着源とその使用方法、成膜装置並びに成膜方法 |
| JP2011060866A (ja) * | 2009-09-07 | 2011-03-24 | Optorun Co Ltd | 多元素同時レートモニターシステム、多元素同時レートモニター方法、成膜装置及び成膜方法 |
| DE102009047483A1 (de) * | 2009-12-04 | 2011-06-09 | Sulfurcell Solartechnik Gmbh | Vorrichtung und Verfahren zur Erzeugung von Chalkopyrit-Absorberschichten in Solarzellen |
| JP2011176148A (ja) * | 2010-02-24 | 2011-09-08 | Nitto Denko Corp | 太陽電池モジュールの製造方法およびそれを用いて得られた太陽電池モジュール |
| CN103132023A (zh) * | 2011-11-21 | 2013-06-05 | 绿阳光电股份有限公司 | 快速加热处理系统及其硫化方法 |
| WO2014010371A1 (ja) * | 2012-07-09 | 2014-01-16 | 日東電工株式会社 | 化合物太陽電池の製法 |
| CN103966551A (zh) * | 2013-01-27 | 2014-08-06 | 常州碳维纳米科技有限公司 | 一种解决高温下衬底原子蒸发影响平整度的方法及装置 |
-
2003
- 2003-10-23 JP JP2003362626A patent/JP2005126757A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009069740A1 (ja) * | 2007-11-30 | 2009-06-04 | Tokyo Electron Limited | 成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 |
| JP2009132977A (ja) * | 2007-11-30 | 2009-06-18 | Tokyo Electron Ltd | 成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 |
| US20100259162A1 (en) * | 2007-11-30 | 2010-10-14 | Tokyo Electron Limited | Film forming device control method, film forming method, film forming device, organic el electronic device, and recording medium storing its control program |
| JP2011060865A (ja) * | 2009-09-07 | 2011-03-24 | Optorun Co Ltd | リニア蒸着源とその使用方法、成膜装置並びに成膜方法 |
| JP2011060866A (ja) * | 2009-09-07 | 2011-03-24 | Optorun Co Ltd | 多元素同時レートモニターシステム、多元素同時レートモニター方法、成膜装置及び成膜方法 |
| DE102009047483A1 (de) * | 2009-12-04 | 2011-06-09 | Sulfurcell Solartechnik Gmbh | Vorrichtung und Verfahren zur Erzeugung von Chalkopyrit-Absorberschichten in Solarzellen |
| WO2011067179A3 (de) * | 2009-12-04 | 2011-11-24 | Sulfurcell Solartechnik Gmbh | Vorrichtung und verfahren zur erzeugung von chalkopyrit-absorberschichten in solarzellen |
| JP2011176148A (ja) * | 2010-02-24 | 2011-09-08 | Nitto Denko Corp | 太陽電池モジュールの製造方法およびそれを用いて得られた太陽電池モジュール |
| CN103132023A (zh) * | 2011-11-21 | 2013-06-05 | 绿阳光电股份有限公司 | 快速加热处理系统及其硫化方法 |
| WO2014010371A1 (ja) * | 2012-07-09 | 2014-01-16 | 日東電工株式会社 | 化合物太陽電池の製法 |
| CN103966551A (zh) * | 2013-01-27 | 2014-08-06 | 常州碳维纳米科技有限公司 | 一种解决高温下衬底原子蒸发影响平整度的方法及装置 |
| CN103966551B (zh) * | 2013-01-27 | 2016-11-23 | 常州国成新材料科技有限公司 | 一种解决高温下衬底原子蒸发影响平整度的方法及装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9085822B2 (en) | Apparatus and method for depositing a material on a substrate | |
| JP5738601B2 (ja) | 薄膜太陽電池セルのための緩衝層蒸着 | |
| TWI555864B (zh) | 提供硫屬元素之方法及裝置 | |
| KR920003591B1 (ko) | 연속진공증착장치 | |
| US8865259B2 (en) | Method and system for inline chemical vapor deposition | |
| US7910166B2 (en) | System and method for depositing a material on a substrate | |
| US20100291308A1 (en) | Web Substrate Deposition System | |
| US20120321910A1 (en) | Methods and apparatus for atomic layer deposition on large area substrates | |
| US20090148669A1 (en) | Methods structures and apparatus to provide group via and ia materials for solar cell absorber formation | |
| JP2014523479A (ja) | インライン式の化学気相成長の方法及びシステム | |
| US7931937B2 (en) | System and method for depositing a material on a substrate | |
| JP2005126757A (ja) | 化合物薄膜の製造装置および方法 | |
| CN101432457B (zh) | 大气压化学气相淀积 | |
| JP2010232316A (ja) | 酸化亜鉛系半導体薄膜の成膜方法、及び成膜装置 | |
| CN222024489U (zh) | 复合膜层的连续镀膜装置 | |
| US20110262641A1 (en) | Inline chemical vapor deposition system | |
| CN111655898A (zh) | 用于蒸发源材料的蒸发器、材料沉积源、沉积装置及其方法 | |
| WO2022116434A1 (zh) | 钙钛矿薄膜节奏化沉积生产方法与设备 | |
| CN102102177B (zh) | 用于在基板上持续沉积薄膜层的气相沉积设备和过程 | |
| US8071165B2 (en) | Chemical vapor deposition method and system for semiconductor devices | |
| JPS62151573A (ja) | 堆積膜形成法 | |
| CN110408891B (zh) | 一种叠层蒸发源装置 | |
| CN102899638B (zh) | 用于光辅助金属有机物化学气相沉积的气体喷淋头装置 | |
| KR20120106964A (ko) | Cu(in,ga)x₂박막을 증착시키는 캐소드 스퍼터 | |
| TWI839614B (zh) | 液體材料驟蒸發坩堝、蒸氣沉積設備及用於塗覆真空腔室內的基板的方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060915 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060915 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20080430 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080704 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080715 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080916 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081104 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081217 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090120 |