JP2005123764A - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
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- JP2005123764A JP2005123764A JP2003354606A JP2003354606A JP2005123764A JP 2005123764 A JP2005123764 A JP 2005123764A JP 2003354606 A JP2003354606 A JP 2003354606A JP 2003354606 A JP2003354606 A JP 2003354606A JP 2005123764 A JP2005123764 A JP 2005123764A
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- mosfet
- semiconductor integrated
- integrated circuit
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- power amplifier
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 230000003321 amplification Effects 0.000 claims abstract description 52
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 52
- 239000003990 capacitor Substances 0.000 claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims description 17
- 238000002955 isolation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/99—A diode as rectifier being used as a detecting circuit in an amplifying circuit
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
【解決手段】 少なくとも1段以上の増幅素子Q1〜Q3を備える高周波電力増幅用パワーアンプを備える半導体集積回路において、初段増幅素子Q1の入力端にソースが接続され、ドレインが接地され、ゲートと接地との間にキャパシタが接続されたMOSFET
M1と、このMOSFETのドレインとゲート間に並列接続された検波ダイオードZDとを含む整合回路を備える。MOSFET M1がON動作することで初段増幅素子Q1の実効的なゲインを低減し、モード変化に対応させる。
【選択図】 図1
Description
Q1、2段目増幅用HBT Q2、終段増幅用HBT Q3はそれぞれ入力または前段のコレクタ出力がベースに入力されるエミッタ接地増幅回路として構成されている。初段増幅用HBT Q1のベースには入力端子INが接続されており、この入力端子INにはRF信号が入力される。また、終段増幅用HBT Q3のコレクタには出力端子OUTが接続される。入力端子IN、各段のHBT Q1〜Q3、及び出力端子OUTの間にはそれぞれ直流カット用のキャパシタC1〜C4が直列に接続され、各段のベース及びコレクタにはそれぞれバイアス電圧Vb1,Vb2,Vb3,Vcc1,Vcc2,Vcc3が供給される。
Q2 2段増幅用HBT
Q3 終段増幅用HBT
M1 PチャネルMOSFET
ZD 検波ダイオード
R1,R2 抵抗
C0〜C4 キャパシタ(コンデンサ)
IN 入力端子
OUT 出力端子
Vmode モード切替端子
Claims (7)
- 少なくとも1段以上の増幅素子を備える高周波電力増幅用パワーアンプを備える半導体集積回路において、前記増幅素子の入力端にソースが接続され、ドレインが接地され、ゲートと接地との間にキャパシタが接続されたMOSFETと、前記MOSFETのドレインとゲート間に並列接続された検波ダイオードとを含む整合回路を備えることを特徴とする半導体集積回路。
- 少なくとも2段構成の増幅素子を備える高周波電力増幅用パワーアンプを備える半導体集積回路において、前段の増幅素子の出力端にソースが接続され、ドレインが接地され、ゲートと接地との間にキャパシタが接続されたMOSFETと、前記MOSFETのドレインとゲート間に並列接続された検波ダイオードとを備える整合回路を備えることを特徴とする半導体集積回路。
- 前記MOSFETはPチャネルMOSFETであることを特徴とする請求項1又は2に記載の半導体集積回路。
- 前記ドレインと接地との間に第1の抵抗が接続され、前記キャパシタと並列に第2の抵抗が接続されていることを特徴とする請求項1ないし3のいずれかに記載の半導体集積回路。
- 前記検波ダイオードは、前記MOSFETのドレインにアノードを接続し、ゲートにカソードを接続していることを特徴とする請求項3又は4に記載の半導体集積回路。
- 前記高周波電力増幅用パワーアンプは、EDGE方式動作とGSM方式動作の切り替えが可能な携帯電話の送信電力増幅用パワーアンプとして構成されていることを特徴とする請求項1ないし5のいずれかに記載の半導体集積回路。
- 前記高周波電力増幅用パワーアンプはマルチチップモジュールとして構成されていることを特徴とする請求項6に記載の半導体集積回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003354606A JP4417069B2 (ja) | 2003-10-15 | 2003-10-15 | 半導体集積回路 |
US10/963,558 US7193476B2 (en) | 2003-10-15 | 2004-10-14 | Integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003354606A JP4417069B2 (ja) | 2003-10-15 | 2003-10-15 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005123764A true JP2005123764A (ja) | 2005-05-12 |
JP4417069B2 JP4417069B2 (ja) | 2010-02-17 |
Family
ID=34509734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003354606A Expired - Fee Related JP4417069B2 (ja) | 2003-10-15 | 2003-10-15 | 半導体集積回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7193476B2 (ja) |
JP (1) | JP4417069B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101164372B1 (ko) | 2010-03-25 | 2012-07-09 | 후지쯔 가부시끼가이샤 | 고주파 파워 앰프 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779923B (zh) * | 2015-02-13 | 2017-09-01 | 康希通信科技(上海)有限公司 | 一种射频放大电路及其功率扩展模块 |
CN104639069B (zh) * | 2015-02-13 | 2017-08-11 | 康希通信科技(上海)有限公司 | 一种射频放大电路及其功率限制模块 |
JP2016208305A (ja) * | 2015-04-23 | 2016-12-08 | 株式会社村田製作所 | 電力増幅モジュール |
US10985712B2 (en) | 2019-03-13 | 2021-04-20 | Murata Manufacturing Co., Ltd. | Power amplification module |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851609A (ja) | 1981-09-24 | 1983-03-26 | Nec Corp | 自動利得制御回路 |
JPH07202613A (ja) | 1994-01-07 | 1995-08-04 | Fujitsu Ltd | 抵抗値自動切替回路 |
DE69813049T2 (de) * | 1997-01-21 | 2004-02-12 | Matsushita Electric Industrial Co., Ltd., Kadoma | Hochfrequenzleistungsverstärker |
JPH1188065A (ja) * | 1997-09-11 | 1999-03-30 | Mitsubishi Electric Corp | 半導体増幅回路 |
KR19990053981A (ko) * | 1997-12-24 | 1999-07-15 | 정선종 | 저잡음 증폭기의 이득 제어 회로 |
US6586993B2 (en) * | 2000-11-08 | 2003-07-01 | Research In Motion Limited | Impedance matching low noise amplifier having a bypass switch |
US6580321B1 (en) * | 2001-08-24 | 2003-06-17 | Anadigics, Inc. | Active clamping circuit for power amplifiers |
KR100499787B1 (ko) * | 2002-11-29 | 2005-07-07 | 인티그런트 테크놀로지즈(주) | 스위치 모드 동작을 하는 선형성이 우수한 광대역 가변이득 증폭기 |
TW535353B (en) * | 2002-06-20 | 2003-06-01 | Faraday Tech Corp | High frequency amplifier |
KR100704568B1 (ko) * | 2002-08-05 | 2007-04-06 | 인티그런트 테크놀로지즈(주) | 가변 이득 저잡음 증폭기 |
US6762647B1 (en) * | 2002-08-09 | 2004-07-13 | Triquint Semiconductor, Inc. | Active protection circuit for load mismatched power amplifier |
KR100663450B1 (ko) * | 2003-05-19 | 2007-01-02 | 삼성전자주식회사 | 집적 가능한 전압조정 초고주파 전력 증폭기 |
-
2003
- 2003-10-15 JP JP2003354606A patent/JP4417069B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-14 US US10/963,558 patent/US7193476B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101164372B1 (ko) | 2010-03-25 | 2012-07-09 | 후지쯔 가부시끼가이샤 | 고주파 파워 앰프 |
US8456155B2 (en) | 2010-03-25 | 2013-06-04 | Fujitsu Limited | Radio-frequency power amplifier |
Also Published As
Publication number | Publication date |
---|---|
JP4417069B2 (ja) | 2010-02-17 |
US20050083135A1 (en) | 2005-04-21 |
US7193476B2 (en) | 2007-03-20 |
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