JP2005123497A5 - - Google Patents

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Publication number
JP2005123497A5
JP2005123497A5 JP2003358923A JP2003358923A JP2005123497A5 JP 2005123497 A5 JP2005123497 A5 JP 2005123497A5 JP 2003358923 A JP2003358923 A JP 2003358923A JP 2003358923 A JP2003358923 A JP 2003358923A JP 2005123497 A5 JP2005123497 A5 JP 2005123497A5
Authority
JP
Japan
Prior art keywords
layer
insulating
effect transistor
polymer material
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003358923A
Other languages
English (en)
Japanese (ja)
Other versions
JP4356420B2 (ja
JP2005123497A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003358923A priority Critical patent/JP4356420B2/ja
Priority claimed from JP2003358923A external-priority patent/JP4356420B2/ja
Publication of JP2005123497A publication Critical patent/JP2005123497A/ja
Publication of JP2005123497A5 publication Critical patent/JP2005123497A5/ja
Application granted granted Critical
Publication of JP4356420B2 publication Critical patent/JP4356420B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003358923A 2003-10-20 2003-10-20 電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP4356420B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003358923A JP4356420B2 (ja) 2003-10-20 2003-10-20 電界効果型トランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003358923A JP4356420B2 (ja) 2003-10-20 2003-10-20 電界効果型トランジスタ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2005123497A JP2005123497A (ja) 2005-05-12
JP2005123497A5 true JP2005123497A5 (enExample) 2006-08-10
JP4356420B2 JP4356420B2 (ja) 2009-11-04

Family

ID=34615303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003358923A Expired - Fee Related JP4356420B2 (ja) 2003-10-20 2003-10-20 電界効果型トランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JP4356420B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4844510B2 (ja) * 2007-09-04 2011-12-28 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置
PT103998B (pt) * 2008-03-20 2011-03-10 Univ Nova De Lisboa Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem

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