JP4356420B2 - 電界効果型トランジスタ及びその製造方法 - Google Patents

電界効果型トランジスタ及びその製造方法 Download PDF

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JP4356420B2
JP4356420B2 JP2003358923A JP2003358923A JP4356420B2 JP 4356420 B2 JP4356420 B2 JP 4356420B2 JP 2003358923 A JP2003358923 A JP 2003358923A JP 2003358923 A JP2003358923 A JP 2003358923A JP 4356420 B2 JP4356420 B2 JP 4356420B2
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layer
insulating
polymer material
matrix layer
effect transistor
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JP2005123497A (ja
JP2005123497A5 (enExample
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正雄 小田
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Sony Corp
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Sony Corp
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JP2003358923A 2003-10-20 2003-10-20 電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP4356420B2 (ja)

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JP2003358923A JP4356420B2 (ja) 2003-10-20 2003-10-20 電界効果型トランジスタ及びその製造方法

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JP2003358923A JP4356420B2 (ja) 2003-10-20 2003-10-20 電界効果型トランジスタ及びその製造方法

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JP2005123497A JP2005123497A (ja) 2005-05-12
JP2005123497A5 JP2005123497A5 (enExample) 2006-08-10
JP4356420B2 true JP4356420B2 (ja) 2009-11-04

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4844510B2 (ja) * 2007-09-04 2011-12-28 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
PT103998B (pt) * 2008-03-20 2011-03-10 Univ Nova De Lisboa Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico

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