JP2005063531A - Polishing liquid composition for magnetic disk - Google Patents
Polishing liquid composition for magnetic disk Download PDFInfo
- Publication number
- JP2005063531A JP2005063531A JP2003290690A JP2003290690A JP2005063531A JP 2005063531 A JP2005063531 A JP 2005063531A JP 2003290690 A JP2003290690 A JP 2003290690A JP 2003290690 A JP2003290690 A JP 2003290690A JP 2005063531 A JP2005063531 A JP 2005063531A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- acid
- weight
- substrate
- liquid composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005498 polishing Methods 0.000 title claims abstract description 127
- 239000000203 mixture Substances 0.000 title claims abstract description 60
- 239000007788 liquid Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 49
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 37
- 150000007524 organic acids Chemical class 0.000 claims abstract description 21
- 150000002978 peroxides Chemical class 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001868 water Inorganic materials 0.000 claims abstract description 7
- 150000007522 mineralic acids Chemical class 0.000 claims description 7
- 235000005985 organic acids Nutrition 0.000 claims description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 239000002253 acid Substances 0.000 description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 238000011109 contamination Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 230000009467 reduction Effects 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 229910018104 Ni-P Inorganic materials 0.000 description 6
- 229910018536 Ni—P Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000013585 weight reducing agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 3
- 150000003460 sulfonic acids Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000003242 anti bacterial agent Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- MPNNOLHYOHFJKL-UHFFFAOYSA-N peroxyphosphoric acid Chemical compound OOP(O)(O)=O MPNNOLHYOHFJKL-UHFFFAOYSA-N 0.000 description 2
- 125000003703 phosphorus containing inorganic group Chemical group 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- UTCHNZLBVKHYKC-UHFFFAOYSA-N 2-hydroxy-2-phosphonoacetic acid Chemical compound OC(=O)C(O)P(O)(O)=O UTCHNZLBVKHYKC-UHFFFAOYSA-N 0.000 description 1
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 1
- SZHQPBJEOCHCKM-UHFFFAOYSA-N 2-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P(O)(O)=O)(C(O)=O)CC(O)=O SZHQPBJEOCHCKM-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- GEHMBYLTCISYNY-UHFFFAOYSA-N Ammonium sulfamate Chemical compound [NH4+].NS([O-])(=O)=O GEHMBYLTCISYNY-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 239000004343 Calcium peroxide Substances 0.000 description 1
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229940120146 EDTMP Drugs 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000004974 alkaline earth metal peroxides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 239000012935 ammoniumperoxodisulfate Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- FJTUUPVRIANHEX-UHFFFAOYSA-N butan-1-ol;phosphoric acid Chemical compound CCCCO.OP(O)(O)=O FJTUUPVRIANHEX-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 239000000645 desinfectant Substances 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- IOMVESOOLNIYSU-UHFFFAOYSA-L dipotassium;oxido carbonate Chemical compound [K+].[K+].[O-]OC([O-])=O IOMVESOOLNIYSU-UHFFFAOYSA-L 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960004995 magnesium peroxide Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- NALMPLUMOWIVJC-UHFFFAOYSA-N n,n,4-trimethylbenzeneamine oxide Chemical compound CC1=CC=C([N+](C)(C)[O-])C=C1 NALMPLUMOWIVJC-UHFFFAOYSA-N 0.000 description 1
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 125000001297 nitrogen containing inorganic group Chemical group 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- UUZZMWZGAZGXSF-UHFFFAOYSA-N peroxynitric acid Chemical compound OON(=O)=O UUZZMWZGAZGXSF-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011697 sodium iodate Substances 0.000 description 1
- 229940032753 sodium iodate Drugs 0.000 description 1
- 235000015281 sodium iodate Nutrition 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 125000002153 sulfur containing inorganic group Chemical group 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本発明は、磁気ディスク用研磨液組成物、並びにそれを用いた研磨方法及び基板の製造方法に関する。 The present invention relates to a polishing liquid composition for a magnetic disk, and a polishing method and a substrate manufacturing method using the same.
ハードディスクは、最小記録面積を小さくし高容量化を推進するために、磁気ヘッドの浮上量を小さくすることや表面欠陥（表面汚れ）防止が求められている。このヘッドの浮上量を小さくするためにはハードディスク基板の研磨工程での短波長うねり（波長５０〜５００μm のうねり）、並びに長波長うねり（波長０．５ｍｍ以上のうねり）の低減、更には表面への残留物防止が求められている。ここで言う「うねり」とは表面粗さよりも波長の長い表面凹凸のことであり、Canon 販売製「Zygo」に代表される光学計測機器等で測定可能である。このようなうねり、表面汚れを低減した基板を製造するために、研磨パッドの孔径制御、硬さ制御や研磨時の研磨荷重や回転数を制御するといった機械的条件が検討されている。しかし、この様な機械的条件は効果があるものの充分とは言えない。一方、研磨液組成物からのアプローチも検討されている。特許文献１では酸化剤、リン含有無機酸と他の無機酸を含有する研磨液組成物が開示されている。特許文献２では研磨粒子、過酸化水素、金属硝酸塩及び硝酸を含む研磨工程用スラリーが開示されている。しかし、これら研磨液組成物からのアプローチでは、実用化に必要な研磨速度とうねり低減の両立、更には表面汚れ防止という観点で十分とは言えない。
本発明は、高い研磨速度を持ち且つうねりの低減が可能な研磨液組成物を提供することを目的とする。また、該研磨液組成物を用いた被研磨基板のうねりを低減させる研磨方法、及び該研磨液組成物を用いた基板の製造方法を提供することを目的とする。 An object of the present invention is to provide a polishing composition having a high polishing rate and capable of reducing waviness. It is another object of the present invention to provide a polishing method for reducing waviness of a substrate to be polished using the polishing liquid composition, and a method for producing a substrate using the polishing liquid composition.
即ち、本発明の要旨は、
〔１〕アルミナ、水、過酸化物、及び有機酸を含有する磁気ディスク用研磨液組成物、
〔２〕前記〔１〕記載の研磨液組成物を用いて、被研磨基板を研磨する方法、並びに
〔３〕前記〔１〕記載の研磨液組成物を用いて、被研磨基板を研磨する工程を有する基板の製造方法
に関する。
That is, the gist of the present invention is as follows.
[1] Polishing liquid composition for magnetic disk containing alumina, water, peroxide, and organic acid,
[2] A method of polishing a substrate to be polished using the polishing composition according to [1], and [3] a step of polishing a substrate to be polished using the polishing composition according to [1]. It is related with the manufacturing method of the board | substrate which has.
本発明の研磨液組成物を磁気ディスク用研磨に用いることにより、高い研磨速度と被研磨物のうねり低減を達成し、且つ基板欠陥、特に基板汚れを低減させるという効果が奏される。また該研磨液組成物を用いた被研磨基板のうねりを低減させる研磨方法及び基板の製造方法が得られる。 By using the polishing composition of the present invention for polishing for a magnetic disk, it is possible to achieve a high polishing rate, a reduction in waviness of the object to be polished, and a reduction in substrate defects, particularly substrate contamination. Moreover, the grinding | polishing method and the manufacturing method of a board | substrate which reduce the wave | undulation of the board | substrate to be polished using this polishing liquid composition are obtained.
本発明の研磨液組成物は、研磨材にアルミナを用いた研磨液組成物の研磨促進剤として、有機酸と過酸化物を併用することに大きな特徴があり、かかる特徴を有する研磨液組成物を用いることで、高い研磨速度を達成し、かつ被研磨基板のうねりを有意に低減することができ、同時にスクラッチ、ピット等の基板欠陥、特に基板汚れが低減できるという顕著な効果が発現される。 The polishing liquid composition of the present invention has a great feature in that an organic acid and a peroxide are used in combination as a polishing accelerator of a polishing liquid composition using alumina as an abrasive, and the polishing liquid composition having such characteristics By using this, it is possible to achieve a high polishing rate and to significantly reduce the waviness of the substrate to be polished, and at the same time, a remarkable effect that substrate defects such as scratches and pits, particularly substrate contamination, can be reduced. .
本発明の研磨液組成物を用いた場合の研磨の機構の詳細については不明であるが、研磨中のｐＨを低下させるほど研磨速度が向上することから、酸から生じる水素イオンの被研磨材へのエッチング効果で研磨を促進していると推定している。したがって酸強度が高いほど研磨速度は高い。また過酸化物はアルミナの研磨効力が十分に発揮されるように被研磨物の表面を変化させて上記エッチング作用を増幅させ、結果実生産レベルの加工速度でのうねりの低減を可能にしており、この有機酸と過酸化物の組合せによる増幅効果は同時に基板欠陥、特に基板汚れの低減に繋がっていると推測している。 The details of the polishing mechanism when the polishing liquid composition of the present invention is used are unknown, but the polishing rate increases as the pH during polishing is lowered, so that the material to be polished with hydrogen ions generated from the acid is improved. It is estimated that polishing is promoted by the etching effect. Therefore, the higher the acid strength, the higher the polishing rate. In addition, the peroxide changes the surface of the object to be polished so that the polishing effect of alumina is fully exerted, thereby amplifying the etching action, and as a result, it is possible to reduce waviness at the processing speed of the actual production level. It is presumed that the amplification effect by the combination of organic acid and peroxide leads to reduction of substrate defects, particularly substrate contamination.
本発明の研磨液組成物は研磨材としてアルミナを含有する。本発明に用いられるアルミナとしては、うねり低減、表面粗さ低減、研磨速度向上及び表面欠陥防止の観点から、アルミナとしての純度が９５％以上のアルミナが好ましく、より好ましくは９７％以上、さらに好ましくは９９％以上のアルミナである。また、研磨速度の観点からは、α−アルミナが好ましく、表面性状及びうねり低減の観点からは、γ−アルミナ、δ−アルミナ、θ―アルミナ、η−アルミナ、κ−アルミナ等の中間アルミナが好ましい。本発明の中間アルミナとは、α−アルミナ粒子以外のアルミナ粒子の総称であり、具体的にはγ−アルミナ、δ−アルミナ、θ−アルミナ、η−アルミナ、κ−アルミナ、これらの混合物等が挙げられる。その中間アルミナの中でも、研磨速度向上及びうねり低減の観点から、γ−アルミナ、δ−アルミナ、θ−アルミナ及びこれらの混合物が好ましく、特に好ましくはγ−アルミナ及びθ−アルミナである。 The polishing composition of the present invention contains alumina as an abrasive. The alumina used in the present invention is preferably alumina having a purity of 95% or more, more preferably 97% or more, and still more preferably from the viewpoints of waviness reduction, surface roughness reduction, polishing rate improvement and surface defect prevention. Is 99% or more of alumina. Further, from the viewpoint of polishing rate, α-alumina is preferable, and from the viewpoint of reducing surface properties and waviness, intermediate alumina such as γ-alumina, δ-alumina, θ-alumina, η-alumina, and κ-alumina is preferable. . The intermediate alumina of the present invention is a general term for alumina particles other than α-alumina particles, and specifically includes γ-alumina, δ-alumina, θ-alumina, η-alumina, κ-alumina, and mixtures thereof. Can be mentioned. Among the intermediate aluminas, γ-alumina, δ-alumina, θ-alumina and mixtures thereof are preferable from the viewpoint of improving the polishing rate and reducing waviness, and γ-alumina and θ-alumina are particularly preferable.
アルミナの一次粒子の平均粒径は、うねり低減の観点から、一次粒子の平均粒径は0.005 〜0.8 μm がより好ましく、特に好ましくは0.01〜0. 4μm であり、二次粒子の平均粒径は0.01〜2 μm がより好ましく、さらに好ましくは0.05〜1.0 μm 、特に好ましくは0.1 〜0.5 μm である。研磨材の一次粒子の平均粒径は、走査型電子顕微鏡で観察（好適には3000〜30000 倍）又は透過型電子顕微鏡で観察（好適には10000 〜300000倍）して画像解析を行い、粒径を測定することにより求めることができる。また、二次粒子の平均粒径はレーザー光回折法を用いて体積平均粒径として測定することができる。 From the viewpoint of reducing waviness, the average particle size of primary particles of alumina is more preferably 0.005 to 0.8 μm, particularly preferably 0.01 to 0.4 μm, and the average particle size of secondary particles is 0.01 to 2 μm is more preferable, 0.05 to 1.0 μm is more preferable, and 0.1 to 0.5 μm is particularly preferable. The average particle size of the primary particles of the abrasive is observed with a scanning electron microscope (preferably 3000 to 30000 times) or observed with a transmission electron microscope (preferably 10000 to 300000 times), and image analysis is performed. It can be determined by measuring the diameter. The average particle size of the secondary particles can be measured as a volume average particle size using a laser beam diffraction method.
特に、アルミナが中間アルミナの場合、BET 法で測定された比表面積好ましくは30〜300 ｍ2 ／ｇ、より好ましくは50〜200 ｍ2 ／ｇである。 In particular, when the alumina is intermediate alumina, the specific surface area measured by BET method is preferably 30 to 300 m 2 / g, more preferably 50 to 200 m 2 / g.
アルミナの含有量は、研磨速度の向上及びうねり低減の観点から、研磨液組成物中において、好ましくは0.05重量％以上、より好ましくは0.1 重量％以上、さらに好ましくは0.5 重量％以上、特に好ましくは1 重量％以上である。また、表面品質及び経済性の観点から、好ましくは40重量％以下、より好ましくは30重量％以下、さらに好ましくは25重量％以下、特に好ましくは20重量％以下である。即ち、研磨液組成物中のアルミナの含有量は、好ましくは0.05〜40重量％、より好ましくは0.1 〜30重量％、さらに好ましくは0.5 〜25重量％、特に好ましくは１〜20重量％である。 The content of alumina is preferably 0.05% by weight or more, more preferably 0.1% by weight or more, further preferably 0.5% by weight or more, particularly preferably from the viewpoint of improving the polishing rate and reducing waviness in the polishing composition. 1% by weight or more. Further, from the viewpoint of surface quality and economy, it is preferably 40% by weight or less, more preferably 30% by weight or less, still more preferably 25% by weight or less, and particularly preferably 20% by weight or less. That is, the content of alumina in the polishing composition is preferably 0.05 to 40% by weight, more preferably 0.1 to 30% by weight, still more preferably 0.5 to 25% by weight, and particularly preferably 1 to 20% by weight. .
本発明の研磨液組成物は、研磨速度の向上及びうねり低減の観点から、過酸化物を含有する。本発明の過酸化物はその構造から無機系過酸化物と有機系過酸化物に大別される。それら過酸化物の具体例を以下に示す。無機系過酸化物としては、過酸化水素、更には過酸化ナトリウム、過酸化カリウム、過酸化カルシウム、過酸化バリウム、過酸化マグネシウムの様なアルカリ金属、又はアルカリ土類金属の過酸化物類、ペルオキソ炭酸ナトリウム、ペルオキソ炭酸カリウム等のペルオキソ炭酸塩類、ペルオキソ二硫酸アンモニウム、ペルオキソ二硫酸ナトリウム、ペルオキソ二硫酸カリウム、ペルオキソ一硫酸等のペルオキソ硫酸又はその塩類、ペルオキソ硝酸、ペルオキソ硝酸ナトリウム、ペルオキソ硝酸カリウム等のペルオキソ硝酸又はその塩類、ペルオキソリン酸ナトリウム、ペルオキソリン酸カリウム、ペルオキソリン酸アンモニウム等のペルオキソリン酸又はその塩類、ペルオキソホウ酸ナトリウム、ペルオキソホウ酸カリウム等のペルオキソホウ酸塩類、ペルオキソクロム酸カリウム、ペルオキソクロム酸ナトリウム等のペルオキソクロム酸塩類、過マンガン酸カリウム、過マンガン酸ナトリウム等の過マンガン酸塩類、過塩素酸ナトリウム、過塩素酸カリウム、塩素酸、次亜塩素酸ナトリウム、過沃素酸ナトリウム、過沃素酸カリウム、沃素酸、沃素酸ナトリウム等の含ハロゲン酸素酸又はその誘導体類を用いることができる。有機系過酸化物としては、過酢酸、過ギ酸、過安息香酸等の過カルボン酸類、ｔ−ブチルパーオキサイド、クメンパーオキサイド等のパーオキサイド類、を用いることができる。これらの内、研磨速度向上性や入手性、水溶性等の取り扱い性を比較した場合、無機系過酸化物が好ましい。さらに、環境問題の点を考慮すると重金属を含まない無機系過酸化物が好ましい。以上の観点より、より好ましくは、無機系過酸化物であり、更には過酸化水素、ペルオキソ硫酸塩類、含ハロゲン酸素酸又はその塩であり、特に好ましくは過酸化水素である。また、これらの過酸化物は１種でもよいが、２種以上を混合して用いても良い。 The polishing composition of the present invention contains a peroxide from the viewpoint of improving the polishing rate and reducing waviness. The peroxides of the present invention are roughly classified into inorganic peroxides and organic peroxides based on their structures. Specific examples of these peroxides are shown below. Examples of inorganic peroxides include hydrogen peroxide, and also sodium peroxide, potassium peroxide, calcium peroxide, barium peroxide, alkali metal such as magnesium peroxide, or alkaline earth metal peroxides, Peroxo carbonates such as sodium peroxocarbonate and potassium peroxocarbonate, peroxosulfuric acid such as ammonium peroxodisulfate, sodium peroxodisulfate, potassium peroxodisulfate, and peroxomonosulfuric acid, peroxosulfuric acid such as peroxonitric acid, sodium peroxonitrate, and potassium peroxonitrate Peroxophosphoric acid or its salts such as nitric acid or its salt, sodium peroxophosphate, potassium peroxophosphate, ammonium peroxophosphate, peroxophosphoric acid such as sodium peroxoborate, potassium peroxoborate Acid salts, peroxochromates such as potassium peroxochromate and sodium peroxochromate, permanganates such as potassium permanganate and sodium permanganate, sodium perchlorate, potassium perchlorate, chloric acid, hypochlorous acid Halogenated oxygen acids such as sodium chlorate, sodium periodate, potassium periodate, iodic acid, sodium iodate or derivatives thereof can be used. As the organic peroxide, percarboxylic acids such as peracetic acid, performic acid and perbenzoic acid, and peroxides such as t-butyl peroxide and cumene peroxide can be used. Among these, inorganic peroxides are preferable when the handling properties such as improvement in polishing rate, availability, and water solubility are compared. Furthermore, in view of environmental problems, inorganic peroxides that do not contain heavy metals are preferable. From the above viewpoints, inorganic peroxides are more preferable, hydrogen peroxide, peroxosulfuric acid salts, halogen-containing oxygen acids or salts thereof are more preferable, and hydrogen peroxide is particularly preferable. These peroxides may be used alone or in combination of two or more.
過酸化物の含有量は、研磨速度の向上及びうねり低減の観点から、研磨液組成物中において好ましくは0.002 重量％以上、より好ましくは0.005 重量％以上、さらに好ましくは0.007 重量％以上、特に好ましくは0.01重量％以上である。また、表面品質及び経済性の観点から、好ましくは20重量％以下、より好ましくは15重量％以下、さらに好ましくは10重量％以下、特に好ましくは5 重量％以下である。即ち、研磨液組成物中の過酸化物の含有量は好ましくは0.002 〜20重量％、より好ましくは0.005 〜15重量％、さらに好ましくは0.007 〜10重量％、特に好ましくは0.01〜5 重量％である。 The content of the peroxide is preferably 0.002% by weight or more, more preferably 0.005% by weight or more, still more preferably 0.007% by weight or more, particularly preferably from the viewpoint of improving the polishing rate and reducing waviness. Is 0.01% by weight or more. From the viewpoint of surface quality and economy, it is preferably 20% by weight or less, more preferably 15% by weight or less, still more preferably 10% by weight or less, and particularly preferably 5% by weight or less. That is, the peroxide content in the polishing composition is preferably 0.002 to 20% by weight, more preferably 0.005 to 15% by weight, still more preferably 0.007 to 10% by weight, and particularly preferably 0.01 to 5% by weight. is there.
本発明の研磨液組成物には研磨速度の向上、及びうねり低減の観点から、アルミナ、過酸化物に加え、有機酸を含有する。本発明に用いられる有機酸は、研磨速度の向上、うねり低減の観点から、そのｐＫ１が７以下、より好ましくは５以下、更に好ましくは４以下、特に好ましくは２以下であることが好ましい。ここでｐＫ１とは２５℃における第１酸解離定数の逆数の対数値を表わす。各化合物のｐＫ１は化学便覧改訂４版（基礎編）II、pp316 〜325 （日本化学会編）等に記載されている。 The polishing composition of the present invention contains an organic acid in addition to alumina and peroxide from the viewpoint of improving the polishing rate and reducing waviness. The organic acid used in the present invention preferably has a pK1 of 7 or less, more preferably 5 or less, still more preferably 4 or less, and particularly preferably 2 or less, from the viewpoint of improving the polishing rate and reducing waviness. Here, pK1 represents the logarithmic value of the reciprocal of the first acid dissociation constant at 25 ° C. PK1 of each compound is described in Chemical Handbook 4th edition (basic edition) II, pp316-325 (edited by Chemical Society of Japan).
本発明に用いられる有機酸としては、研磨速度向上、うねり低減及び表面汚れ防止の観点から、含硫黄有機酸、カルボン酸、及び含リン有機酸が好ましい。その具体例を以下に示す。ギ酸、酢酸、グリコール酸、乳酸、プロパン酸、ヒドロキシプロパン酸、酪酸、安息香酸、グリシン等のモノカルボン酸、シュウ酸、コハク酸、グルタル酸、アジピン酸、マレイン酸、フマル酸、イタコン酸、リンゴ酸、酒石酸、クエン酸、イソクエン酸、フタル酸、ニトロトリ酢酸、エチレンジアミンテトラ酢酸等の多価カルボン酸、メタンスルホン酸、パラトルエンスルホン酸等の含硫黄有機酸、エチルリン酸、ブチルリン酸、ラウリルリン酸、ホスホノヒドロキシ酢酸、ヒドロキシエチリデン-1,1- ジホスホン酸、ホスホノブタントリカルボン酸、エチレンジアミンテトラメチレンホスホン酸等の含リン有機酸等が挙げられる。これらの内、研磨速度の向上、及び、うねり低減の観点から含硫黄有機酸や含リン有機酸が好ましく、より好ましくは有機スルフォン酸類や有機ホスホン酸類、更に好ましくは有機スルフォン酸類である。また、被研磨物の汚れの観点からは含硫黄有機酸やカルボン酸が好ましく、より好ましくは有機スルフォン酸類や多価カルボン酸類である。
これらの化合物は単独で用いても良いし、混合して用いても良い。
The organic acid used in the present invention is preferably a sulfur-containing organic acid, a carboxylic acid, or a phosphorus-containing organic acid from the viewpoints of improving the polishing rate, reducing waviness and preventing surface contamination. Specific examples are shown below. Monocarboxylic acid such as formic acid, acetic acid, glycolic acid, lactic acid, propanoic acid, hydroxypropanoic acid, butyric acid, benzoic acid, glycine, oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, itaconic acid, apple Acids, tartaric acid, citric acid, isocitric acid, phthalic acid, polyvalent carboxylic acids such as nitrotriacetic acid, ethylenediaminetetraacetic acid, sulfur-containing organic acids such as methanesulfonic acid and paratoluenesulfonic acid, ethyl phosphoric acid, butyl phosphoric acid, lauryl phosphoric acid And phosphorus-containing organic acids such as phosphonohydroxyacetic acid, hydroxyethylidene-1,1-diphosphonic acid, phosphonobutanetricarboxylic acid, and ethylenediaminetetramethylenephosphonic acid. Of these, sulfur-containing organic acids and phosphorus-containing organic acids are preferable from the viewpoint of improving the polishing rate and reducing waviness, more preferably organic sulfonic acids and organic phosphonic acids, and still more preferably organic sulfonic acids. Further, from the viewpoint of contamination of the object to be polished, sulfur-containing organic acids and carboxylic acids are preferable, and organic sulfonic acids and polyvalent carboxylic acids are more preferable.
These compounds may be used alone or in combination.
有機酸の含有量は、研磨速度の向上及びうねり低減の観点から、研磨液組成物中において好ましくは0.002 重量％以上、より好ましくは0.005 重量％以上、さらに好ましくは0.007 重量％以上、特に好ましくは0.01重量％以上である。また、表面品質及び経済性の観点から、好ましくは20重量％以下、より好ましくは15重量％以下、さらに好ましくは10重量％以下、特に好ましくは5 重量％以下である。即ち、研磨液組成物中の酸の含有量は好ましくは0.002 〜20重量％、より好ましくは0.005 〜15重量％、さらに好ましくは0.007 〜10重量％、特に好ましくは0.01〜5 重量％である。 The content of the organic acid is preferably 0.002% by weight or more, more preferably 0.005% by weight or more, further preferably 0.007% by weight or more, particularly preferably from the viewpoint of improving the polishing rate and reducing waviness. 0.01% by weight or more. From the viewpoint of surface quality and economy, it is preferably 20% by weight or less, more preferably 15% by weight or less, still more preferably 10% by weight or less, and particularly preferably 5% by weight or less. That is, the acid content in the polishing composition is preferably 0.002 to 20% by weight, more preferably 0.005 to 15% by weight, still more preferably 0.007 to 10% by weight, and particularly preferably 0.01 to 5% by weight.
本発明の研磨液組成物中の水は、媒体として使用されるものであり、その含有量は被研磨物を効率良く研磨する観点から、好ましくは55〜99重量％、より好ましくは60〜97重量％、さらに好ましくは70〜95重量％である。 The water in the polishing composition of the present invention is used as a medium, and the content thereof is preferably 55 to 99% by weight, more preferably 60 to 97, from the viewpoint of efficiently polishing an object to be polished. % By weight, more preferably 70 to 95% by weight.
本発明の研磨液組成物には更なる研磨速度向上及びうねり低減の観点から無機酸を併用することが好ましい。無機酸としては硝酸、亜硝酸等の含窒素無機酸、硫酸、亜硫酸、アミド硫酸等の含硫黄無機酸、リン酸、ピロリン酸、ポリリン酸、ホスホン酸等の含リン無機酸等が挙げられる。これらの内、研磨速度向上の観点から、好ましくは硝酸、亜硝酸、硫酸、亜硫酸及びアミド硫酸であり、より好ましくは硫酸、亜硫酸及びアミド硫酸、特に好ましくは硫酸である。無機酸を併用する場合の含有量は研磨液組成物中において好ましくは0.002 重量％以上、より好ましくは0.005 重量％以上、さらに好ましくは0.007 重量％以上であり、特に好ましくは0.01重量％以上である。また、表面品質及び経済性の観点から好ましくは20重量％以下、より好ましくは15重量％以下、さらに好ましくは10重量％以下、特に好ましくは５重量％以下である。即ち、研磨液組成物中の無機酸の含有量は好ましくは0.002 〜20重量％、より好ましくは0.005 〜15重量％、さらに好ましくは0.007 〜10重量％、特に好ましくは0.01〜5 重量％である。 It is preferable to use an inorganic acid in combination with the polishing composition of the present invention from the viewpoint of further improving the polishing rate and reducing waviness. Examples of the inorganic acid include nitrogen-containing inorganic acids such as nitric acid and nitrous acid, sulfur-containing inorganic acids such as sulfuric acid, sulfurous acid and amidosulfuric acid, and phosphorus-containing inorganic acids such as phosphoric acid, pyrophosphoric acid, polyphosphoric acid and phosphonic acid. Of these, nitric acid, nitrous acid, sulfuric acid, sulfurous acid, and amidosulfuric acid are preferable, and sulfuric acid, sulfurous acid, and amidosulfuric acid are more preferable, and sulfuric acid is particularly preferable. The content in the case of using an inorganic acid in combination is preferably 0.002% by weight or more, more preferably 0.005% by weight or more, still more preferably 0.007% by weight or more, and particularly preferably 0.01% by weight or more in the polishing composition. . From the viewpoint of surface quality and economy, it is preferably 20% by weight or less, more preferably 15% by weight or less, still more preferably 10% by weight or less, and particularly preferably 5% by weight or less. That is, the content of the inorganic acid in the polishing composition is preferably 0.002 to 20% by weight, more preferably 0.005 to 15% by weight, still more preferably 0.007 to 10% by weight, and particularly preferably 0.01 to 5% by weight. .
また、本発明の研磨液組成物には、必要に応じて、無機塩、増粘剤、防錆剤、塩基性物質等の他の成分を配合することができる。特に、硝酸アンモニウム、硫酸アンモニウム、硫酸カリウム、硫酸ニッケル、硫酸アルミニウム、スルファミン酸アンモニウム等の無機塩は研磨速度向上の補助的効果がある。これらの成分は単独で用いても良いし、２種類以上混合して用いても良い。また、その含有量は経済性の観点から、研磨液組成物中好ましくは０．０５〜２０重量％、より好ましくは０．０５〜１０重量％、さらに好ましくは０．０５〜５重量％である。 Moreover, other components, such as an inorganic salt, a thickener, a rust preventive agent, and a basic substance, can be mix | blended with the polishing liquid composition of this invention as needed. In particular, inorganic salts such as ammonium nitrate, ammonium sulfate, potassium sulfate, nickel sulfate, aluminum sulfate, and ammonium sulfamate have an auxiliary effect of improving the polishing rate. These components may be used alone or in combination of two or more. Moreover, the content is preferably 0.05 to 20% by weight, more preferably 0.05 to 10% by weight, and further preferably 0.05 to 5% by weight in the polishing composition from the viewpoint of economy. .
さらに、他の成分として必要に応じて殺菌剤や抗菌剤等を配合することができる。これらの殺菌剤、抗菌剤の含有量は機能を発揮する観点、並びに研磨性能への影響及び経済性の観点から、研磨液組成物中、好ましくは0.0001〜0.1 重量% 、より好ましくは0.001 〜0.05重量％、さらに好ましくは0.002 〜0.02重量％である。 Furthermore, a disinfectant, an antibacterial agent, etc. can be mix | blended as another component as needed. The content of these bactericides and antibacterial agents is preferably 0.0001 to 0.1% by weight, more preferably 0.001 to 0.05% in the polishing composition, from the viewpoint of exerting the function, and the influence on polishing performance and the viewpoint of economy. % By weight, more preferably 0.002 to 0.02% by weight.
尚、本発明の研磨液組成物の各成分濃度は、研磨する際の好ましい濃度であるが、該組成物の製造時の濃度であって良い。通常、組成物は濃縮液として組成物は製造され、これを使用前あるいは使用時に希釈して用いる場合が多い。 In addition, although each component density | concentration of the polishing liquid composition of this invention is a density | concentration preferable at the time of grinding | polishing, it may be a density | concentration at the time of manufacture of this composition. Usually, the composition is produced as a concentrated solution and is often diluted before use or during use.
また、研磨液組成物は目的成分を任意の方法で添加、混合して製造することができる。 The polishing composition can be produced by adding and mixing the target components by any method.
研磨液組成物のｐＨは、被研磨物の種類や要求品質等に応じて適宜決定することが好ましい。ｐＨは研磨速度とうねり低減の観点から低ければ低いほど好ましいが、加工機械の腐食防止性及び作業者の安全性の観点からはｐH は７に近いほど好ましい。よって両者を加味した場合、0.1 以上６未満が好ましく、さらに好ましくは0.5 以上５未満であり、より好ましく１以上４未満であり、特に好ましくは１以上３未満である。研磨液組成物のｐＨは硝酸、硫酸等の無機酸、オキシカルボン酸、多価カルボン酸やアミノポリカルボン酸、アミノ酸等の有機酸、及びその金属塩やアンモニウム塩、アンモニア、水酸化ナトリウム、水酸化カリウム、アミン等の塩基性物質を適宜、所望量で配合することで調整することができる。 The pH of the polishing composition is preferably determined as appropriate according to the type of the object to be polished and the required quality. The pH is preferably as low as possible from the viewpoint of polishing rate and waviness reduction, but the pH is preferably closer to 7 from the viewpoint of corrosion prevention of processing machines and the safety of workers. Therefore, when both are taken into account, it is preferably 0.1 or more and less than 6, more preferably 0.5 or more and less than 5, more preferably 1 or more and less than 4, and particularly preferably 1 or more and less than 3. The pH of the polishing composition is inorganic acid such as nitric acid and sulfuric acid, organic acid such as oxycarboxylic acid, polyvalent carboxylic acid, aminopolycarboxylic acid and amino acid, and metal salt and ammonium salt thereof, ammonia, sodium hydroxide, water It can adjust by mix | blending basic substances, such as a potassium oxide and an amine, with a desired quantity suitably.
本発明の基板の製造方法は、前記研磨液組成物を用いて被研磨基板を研磨する工程を有する。 The manufacturing method of the board | substrate of this invention has the process of grind | polishing a to-be-polished board | substrate using the said polishing liquid composition.
本発明の対象とする被研磨基板である磁気ディスク基板とは、磁気記録用媒体の基板として使用されるものである。磁気ディスク基板の具体例としては、アルミニウム合金にＮｉ−Ｐ合金をメッキした基板が代表的であるが、アルミニウム合金の代わりにガラスやグラッシュカーボンを使用し、これにＮｉ−Ｐメッキを施した基板、あるいはＮｉ−Ｐメッキの代わりに、各種金属化合物をメッキや蒸着により被覆した基板を挙げることができる。 The magnetic disk substrate, which is the substrate to be polished, which is the subject of the present invention, is used as a substrate for a magnetic recording medium. As a specific example of the magnetic disk substrate, a substrate obtained by plating a Ni—P alloy on an aluminum alloy is typical. However, a glass or glassy carbon is used instead of the aluminum alloy, and a substrate obtained by applying Ni—P plating to the glass or glass. Alternatively, instead of Ni-P plating, a substrate in which various metal compounds are coated by plating or vapor deposition can be used.
前記研磨工程においては、多孔質の有機高分子系の研磨布等を貼り付けた研磨盤で基板を挟み込み、本発明の研磨液組成物を研磨面に供給し、圧力を加えながら研磨盤や基板を動かすことにより、被研磨基板を研磨することができる。したがって、本発明は、前記研磨液組成物を用いて、被研磨基板を研磨する方法に関する。研磨を行なう際の他の条件（研磨機の種類、研磨温度、研磨速度、研磨液の供給量等）については特に限定はない。 In the polishing step, the substrate is sandwiched by a polishing disk with a porous organic polymer polishing cloth or the like attached thereto, the polishing composition of the present invention is supplied to the polishing surface, and the polishing disk or the substrate is applied while applying pressure. The substrate to be polished can be polished by moving. Therefore, the present invention relates to a method for polishing a substrate to be polished using the polishing composition. There are no particular limitations on the other conditions for polishing (type of polishing machine, polishing temperature, polishing rate, supply amount of polishing liquid, etc.).
本発明の研磨液組成物は、ポリッシング工程において特に効果があるが、これ以外の研磨工程、例えば、ラッピング工程等にも同様に適用することができる。 The polishing composition of the present invention is particularly effective in the polishing process, but can be similarly applied to other polishing processes such as a lapping process.
実施例１〜６、比較例１〜２
１．研磨液の調製
表１に示すアルミナ（二次粒子の平均粒径0.2 μm 、純度約99.9％）、過酸化物、有機酸、他の添加剤等を所定量、残分をイオン交換水として配合、攪拌し、調製した。
Examples 1-6, Comparative Examples 1-2
1. Preparation of polishing liquid Alumina (average particle size of secondary particles 0.2 μm, purity of about 99.9%), peroxide, organic acid, other additives, etc. shown in Table 1 are mixed in the prescribed amount, and the remainder as ion-exchanged water. , Stirred and prepared.
２．研磨方法
厚さ1.27 mm 、直径3.5 インチのNi-Pメッキされたアルミニウム合金からなる基板（「Zygo NewView200 」で短波長うねり3.8nm 、長波長うねり1.6nm ）の表面を両面加工機により、以下の両面加工機の設定条件でポリッシングし、磁気記録媒体用基板として用いられるNi-Pメッキされたアルミニウム合金基板の研磨物を得た。
2. Polishing method The surface of a substrate made of Ni-P plated aluminum alloy with a thickness of 1.27 mm and a diameter of 3.5 inches ("Zygo NewView200", short wavelength waviness 3.8 nm, long wave waviness 1.6 nm) Polishing was performed under the setting conditions of the double-sided processing machine to obtain a polished product of a Ni-P plated aluminum alloy substrate used as a substrate for a magnetic recording medium.
両面加工機の設定条件を下記に示す。
＜両面加工機の設定条件＞
両面加工機：スピードファーム（株）製、9B型両面加工機
加工圧力：9.8kPa
研磨パッド：フジボウ（株）製「H9900 」（商品名）
定盤回転数：50r/min
研磨液組成物供給流量：100ml/min
研磨時間：4min
投入した基板の枚数：10枚
The setting conditions for the double-sided machine are shown below.
<Setting conditions of double-sided machine>
Double-sided processing machine: Speed Farm Co., Ltd., 9B type double-sided processing machine Processing pressure: 9.8kPa
Polishing pad: “H9900” (trade name) manufactured by Fujibow Corporation
Surface plate rotation speed: 50r / min
Polishing liquid composition supply flow rate: 100ml / min
Polishing time: 4min
Number of substrates loaded: 10
３．評価方法
（１）研磨速度
研磨前後の各基板の重さを計り（Sartorius 社製「BP-210S 」）を用いて測定し、各基板の重量変化を求め、１０枚の平均値を減少量とし、それを研磨時間で割った値を重量減少速度とした。重量の減少速度を下記の式に導入し、研磨速度（μm/min ）に変換した。比較例の研磨速度を基準値１として各実験例の研磨速度の相対値（相対速度）を求めた。
重量減少速度(g/min) ＝｛研磨前の重量(g) −研磨後の重量(g) ｝／研磨時間(min)
研磨速度（μm/min)＝重量減少速度(g/min) ／基板片面面積(mm2 )
／Ni-Pメッキ密度(g/cm3 )×1000000
3. Evaluation method (1) Polishing speed Each substrate before and after polishing is weighed (measured by “BP-210S” manufactured by Sartorius), and the change in the weight of each substrate is obtained. The value obtained by dividing the result by the polishing time was defined as the weight reduction rate. The weight reduction rate was introduced into the following equation and converted to a polishing rate (μm / min). The relative value (relative speed) of the polishing rate of each experimental example was determined with the polishing rate of the comparative example as the reference value 1.
Weight reduction rate (g / min) = {weight before polishing (g) −weight after polishing (g)} / polishing time (min)
Polishing rate (μm / min) = Weight reduction rate (g / min) / Substrate single side area (mm 2 )
/ Ni-P plating density (g / cm 3 ) × 1000000
（２）うねり
研磨後の各基板を下記の条件で測定した。
機器 ：Zygo NewView200
レンズ ：2.5 倍 Micheison
ズーム比 ：０．５
リムーブ ：Cylinder
フィルター：FFT Fixed Band Pass
短波長うねり：50〜500 μm
長波長うねり：0.5 〜5mm
エリア ：4.33mm×5.77mm
(2) Swelling Each substrate after polishing was measured under the following conditions.
Equipment: Zygo NewView200
Lens: 2.5 times Micheison
Zoom ratio: 0.5
Remove: Cylinder
Filter: FFT Fixed Band Pass
Short wavelength swell: 50 to 500 μm
Long wavelength swell: 0.5 to 5mm
Area: 4.33mm x 5.77mm
（３）表面汚れ
研磨後の各基板の表面を偏光光学顕微鏡にて３００倍で観察し、下記の５段階評価をした。１，２は実用上の不良である。
５：表面にアルミナ残留物や研磨クズ等が全く観察されないもの
４：極わずかしか見られなかったもの
３：少し観察されたもの
２：多く観察されたもの
１：非常に多く観察されたもの
(3) Surface contamination The surface of each substrate after polishing was observed with a polarizing optical microscope at 300 times, and the following five-level evaluation was performed. 1 and 2 are practical defects.
5: Alumina residue, polishing debris, etc. are not observed at all on the surface. 4: A very small amount is observed. 3: A small amount is observed. 2: A large amount is observed. 1: A very large amount is observed.
表１に結果を示す。 Table 1 shows the results.
表１の結果より、実施例１〜６で得られた研磨液組成物は、比較例１〜２のものに比べて、高い研磨速度を有し、短波長うねり、長波長うねりを共に低減することができ、さらに基板の表面汚れも顕著に低減しうるものであることがわかる。 From the results of Table 1, the polishing liquid compositions obtained in Examples 1 to 6 have a higher polishing rate than those of Comparative Examples 1 and 2, and reduce both short wavelength waviness and long wavelength waviness. It can also be seen that the surface contamination of the substrate can be significantly reduced.
本発明の研磨液組成物は、高品質のハードディスク等の磁気ディスク基板の製造に好適に使用することができる。 The polishing composition of the present invention can be suitably used for the production of a magnetic disk substrate such as a high-quality hard disk.
Claims (5)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003290690A JP4206313B2 (en) | 2003-08-08 | 2003-08-08 | Polishing liquid composition for magnetic disk |
| GB0415976A GB2404921B (en) | 2003-08-08 | 2004-07-16 | Polishing composition for magnetic disk |
| TW093121651A TWI343943B (en) | 2003-08-08 | 2004-07-20 | Polishing composition for magnetic disk |
| US10/896,873 US20050032463A1 (en) | 2003-08-08 | 2004-07-23 | Polishing composition for magnetic disk |
| MYPI20043152A MY139590A (en) | 2003-08-08 | 2004-08-04 | Polishing composition for magnetic disk |
| CNB2004100562306A CN100460478C (en) | 2003-08-08 | 2004-08-05 | Polishing composition for magnetic disk |
| US11/062,462 US20050136807A1 (en) | 2003-08-08 | 2005-02-22 | Polishing composition for magnetic disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003290690A JP4206313B2 (en) | 2003-08-08 | 2003-08-08 | Polishing liquid composition for magnetic disk |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005063531A true JP2005063531A (en) | 2005-03-10 |
| JP4206313B2 JP4206313B2 (en) | 2009-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2003290690A Expired - Lifetime JP4206313B2 (en) | 2003-08-08 | 2003-08-08 | Polishing liquid composition for magnetic disk |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20050032463A1 (en) |
| JP (1) | JP4206313B2 (en) |
| CN (1) | CN100460478C (en) |
| GB (1) | GB2404921B (en) |
| MY (1) | MY139590A (en) |
| TW (1) | TWI343943B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI506621B (en) * | 2005-12-22 | 2015-11-01 | Kao Corp | Polishing composition for hard disk substrate |
| US8247326B2 (en) | 2008-07-10 | 2012-08-21 | Cabot Microelectronics Corporation | Method of polishing nickel-phosphorous |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| JP6366308B2 (en) * | 2014-03-12 | 2018-08-01 | 株式会社ディスコ | Processing method |
| US10144850B2 (en) * | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6149696A (en) * | 1997-11-06 | 2000-11-21 | Komag, Inc. | Colloidal silica slurry for NiP plated disk polishing |
| US6569216B1 (en) * | 1998-11-27 | 2003-05-27 | Kao Corporation | Abrasive fluid compositions |
| JP2000212776A (en) * | 1999-01-18 | 2000-08-02 | Jsr Corp | Aqueous dispersion for mechanochemical polishing |
| KR20010087485A (en) * | 2000-03-07 | 2001-09-21 | 김순택 | Method for driving plasma display panel |
| US6569215B2 (en) * | 2000-04-17 | 2003-05-27 | Showa Denko Kabushiki Kaisha | Composition for polishing magnetic disk substrate |
| US6976905B1 (en) * | 2000-06-16 | 2005-12-20 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system |
| JP4009986B2 (en) * | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method for polishing memory hard disk using the same |
| EP1211024A3 (en) * | 2000-11-30 | 2004-01-02 | JSR Corporation | Polishing method |
| JP4231632B2 (en) * | 2001-04-27 | 2009-03-04 | 花王株式会社 | Polishing liquid composition |
| MY144587A (en) * | 2001-06-21 | 2011-10-14 | Kao Corp | Polishing composition |
| MY133305A (en) * | 2001-08-21 | 2007-11-30 | Kao Corp | Polishing composition |
| JP2003151928A (en) * | 2001-11-12 | 2003-05-23 | Sumitomo Bakelite Co Ltd | Polishing composition |
| KR100449614B1 (en) * | 2001-12-28 | 2004-09-22 | 제일모직주식회사 | Slurry composition of low erosion for chemical mechanical polishing of metal lines |
| JP2003218071A (en) * | 2002-01-28 | 2003-07-31 | Sumitomo Bakelite Co Ltd | Composition for polishing |
| US7147682B2 (en) * | 2002-12-26 | 2006-12-12 | Kao Corporation | Polishing composition |
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2003
- 2003-08-08 JP JP2003290690A patent/JP4206313B2/en not_active Expired - Lifetime
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- 2004-07-16 GB GB0415976A patent/GB2404921B/en not_active Expired - Fee Related
- 2004-07-20 TW TW093121651A patent/TWI343943B/en active
- 2004-07-23 US US10/896,873 patent/US20050032463A1/en not_active Abandoned
- 2004-08-04 MY MYPI20043152A patent/MY139590A/en unknown
- 2004-08-05 CN CNB2004100562306A patent/CN100460478C/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US20050136807A1 (en) | 2005-06-23 |
| GB2404921A (en) | 2005-02-16 |
| TW200517479A (en) | 2005-06-01 |
| JP4206313B2 (en) | 2009-01-07 |
| US20050032463A1 (en) | 2005-02-10 |
| TWI343943B (en) | 2011-06-21 |
| GB2404921B (en) | 2007-09-12 |
| MY139590A (en) | 2009-10-30 |
| GB0415976D0 (en) | 2004-08-18 |
| CN100460478C (en) | 2009-02-11 |
| CN1580173A (en) | 2005-02-16 |
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