GB2404921A - Polishing composition for magnetic disk - Google Patents
Polishing composition for magnetic disk Download PDFInfo
- Publication number
- GB2404921A GB2404921A GB0415976A GB0415976A GB2404921A GB 2404921 A GB2404921 A GB 2404921A GB 0415976 A GB0415976 A GB 0415976A GB 0415976 A GB0415976 A GB 0415976A GB 2404921 A GB2404921 A GB 2404921A
- Authority
- GB
- United Kingdom
- Prior art keywords
- polishing
- acid
- substrate
- polishing composition
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 142
- 239000000203 mixture Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 56
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 41
- 150000007524 organic acids Chemical class 0.000 claims abstract description 24
- 150000002978 peroxides Chemical class 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 235000005985 organic acids Nutrition 0.000 claims abstract description 10
- 238000007517 polishing process Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000001735 carboxylic acids Chemical class 0.000 claims abstract description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract 2
- 239000011574 phosphorus Substances 0.000 claims abstract 2
- 229910018104 Ni-P Inorganic materials 0.000 claims description 8
- 229910018536 Ni—P Inorganic materials 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 239000002253 acid Substances 0.000 abstract description 17
- 150000007513 acids Chemical class 0.000 abstract description 10
- 239000005864 Sulphur Substances 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 16
- 239000002245 particle Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 150000003460 sulfonic acids Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000003242 anti bacterial agent Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000000645 desinfectant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910017053 inorganic salt Inorganic materials 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- UTCHNZLBVKHYKC-UHFFFAOYSA-N 2-hydroxy-2-phosphonoacetic acid Chemical compound OC(=O)C(O)P(O)(O)=O UTCHNZLBVKHYKC-UHFFFAOYSA-N 0.000 description 1
- SZHQPBJEOCHCKM-UHFFFAOYSA-N 2-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P(O)(O)=O)(C(O)=O)CC(O)=O SZHQPBJEOCHCKM-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 239000004343 Calcium peroxide Substances 0.000 description 1
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 1
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 239000012935 ammoniumperoxodisulfate Substances 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- FJTUUPVRIANHEX-UHFFFAOYSA-N butan-1-ol;phosphoric acid Chemical compound CCCCO.OP(O)(O)=O FJTUUPVRIANHEX-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- IOMVESOOLNIYSU-UHFFFAOYSA-L dipotassium;oxido carbonate Chemical compound [K+].[K+].[O-]OC([O-])=O IOMVESOOLNIYSU-UHFFFAOYSA-L 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 229960004995 magnesium peroxide Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- NALMPLUMOWIVJC-UHFFFAOYSA-N n,n,4-trimethylbenzeneamine oxide Chemical compound CC1=CC=C([N+](C)(C)[O-])C=C1 NALMPLUMOWIVJC-UHFFFAOYSA-N 0.000 description 1
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 125000001297 nitrogen containing inorganic group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- UUZZMWZGAZGXSF-UHFFFAOYSA-N peroxynitric acid Chemical compound OON(=O)=O UUZZMWZGAZGXSF-UHFFFAOYSA-N 0.000 description 1
- 125000003703 phosphorus containing inorganic group Chemical group 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000011697 sodium iodate Substances 0.000 description 1
- 229940032753 sodium iodate Drugs 0.000 description 1
- 235000015281 sodium iodate Nutrition 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000002153 sulfur containing inorganic group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A polishing composition for a magnetic disk, comprising alumina, water, a peroxide and an organic acid; a polishing process for a substrate to be polished, comprising the step of polishing the substrate to be polished with the polishing composition; and a process for manufacturing a substrate, comprising the step of polishing a substrate to be polished with the polishing composition. The polishing composition can be suitably used for the manufacture of a magnetic disk substrate for high-quality hard disks and the like. The organic acid may be selected from sulphur-containing organic acids, carboxylic acids, and phosphorus containing acids. The polishing composition may further contain an inorganic acid.
Description
240492 1
POLISHING COMPOSITION FOR MAGNETIC DISK
FIELD OF THE INVENTION
The present invention relates to a polishing composition for a magnetic disk, a polishing process with the polishing composition, and a method for manufacturing a substrate with the polishing composition.
BACKGROUND OF THE INVENTION
In order to have a smaller unit recording area and promote higher storage capacity for hard disk drives, it has been desired to lower the flying height of the magnetic head and prevent surface defects (surface stains). In order to lower the flying height of the magnetic head, there have been earnestly desired a reduction of short-wavelength waviness (waviness having a wavelength of 50 to 500 m) and a reduction of long-wavelength waviness (waviness having a wavelength of 0.5 mm or more), and prevention of residual substances on the surface during the polishing step of the hard disk substrate. The "waviness" as used herein refers to dents and projections of a surface having a wavelength longer than that of roughness, and can be determined by using optical instruments represented by "Zygo" commercially available from Canon Sales Inc. In order to manufacture a substrate with reduced waviness and surface stains as described above, mechanical conditions such as the pore size control of a polishing pad, hardness control, polishing load during polishing and control of the number of rotations have been studied. However, although the mechanical conditions as mentioned above have some effects, they cannot be said to be satisfactory. On the other hand, an approach from a polishing composition has been studied. Japanese Patent Laid-Open No. 2003-14733 discloses a polishing composition containing an oxidizing agent, a phosphorus-containing inorganic acid, and other organic acid. Japanese Patent Laid-Open No. Hei 11-246849 discloses a slurry for a polishing step, containing abrasive particles, hydrogen peroxide, a metal nitrate and nitric acid. However, the approaches from these polishing compositions cannot be satisfactory from the viewpoint of satisfying both the polishing rate and reduction in waviness necessary for practical use, and also the prevention of surface stains.
SUMMARY OF THE INVENTION
The present invention relates to the followings: [1] a polishing composition for a magnetic disk, containing alumina, water, a peroxide and an organic acid; [2] a polishing process of a substrate to be polished, including the step of polishing the substrate to be polished with the polishing composition of the above [1]; and [3] a method for manufacturing a substrate, including the step of polishing a substrate to be polished with the polishing composition of the above [1].
DETAILED DESCRIPTION OF THE INVENTION
The present invention relates to a polishing composition capable of having a high polishing rate and reduced waviness. Also, the present invention relates to a polishing process for, for instance, reducing waviness of a substrate to be polished with the polishing composition; and a method for manufacturing a substrate with the polishing composition.
These and other advantages of the present invention will be apparent from
the following description.
By using the polishing composition of the present invention for the polishing of a magnetic disk, there are exhibited some effects that a high polishing rate and reduction in waviness of an object to be polished can be accomplished, and defects in a substrate, especially stains on a substrate can be reduced. Also, there are provided a polishing process for reducing waviness of a substrate to be polished with the polishing composition, and a method for manufacturing a substrate with the polishing composition.
One of the significant features of the polishing composition of the present invention resides in the combined use of an organic acid and a peroxide as polishing accelerators of the polishing composition, wherein an alumina is used as an abrasive. By using the polishing composition having the above features, a remarkable effect is exhibited such as achievement of a high polishing rate, reduction in waviness of a substrate to be polished, and sufficient reduction in surface defects such as scratches and pits, especially surface stains.
The details of the functional mechanism for polishing with the polishing composition of the present invention may not be certain. Although not wanting to be limited by theory, it is presumed that the lower the pH of the polishing composition during polishing, the higher the polishing rate, so that an etching effect on an object to be polished is caused by the hydrogen ion generated by the acid, whereby the polishing is accelerated. Accordingly, the higher the acid strength, the higher the polishing rate. In addition, the peroxide changes the surface of the object to be polished so that the polishing effect of the alumina is satisfactorily exhibited, thereby increasing the above-mentioned etching effect.
Consequently, the waviness can be reduced at the processing speed on the actual manufacturing level. Although not wanting to be limited by theory, it is presumed that the amplifying effect by the combination of the organic acid and the peroxide is simultaneously connected to the reduction of the substrate defect, especially the reduction of substrate stains.
The polishing composition of the present invention contains an alumina as an abrasive. As the alumina preferable in the present invention, the alumina has a purity as alumina of preferably 95% or more, more preferably 97% or more, and even more preferably 99% of more, from the viewpoints of reducing the waviness, reducing the surface roughness, increasing the polishing rate and preventing the surface defects. The a- alumina is preferable, from the viewpoint of the polishing rate, and the intermediate alumina such as y-alumina, 6-alumina, O-alumina, Tl-alumina, and K-alumina are preferable, from the viewpoints of the surface conditions and reduction in the waviness. The intermediate alumina in the present invention is a generic term referring to alumina particles other than the a-alumina particles, and concrete examples thereof include O- alumina particles, lo-alumina particles, O-alumina particles, q-alumina particles, K-alumina particles, and mixtures thereof. Among these intermediate aluminas, y-alumina, 6-alumina, O-alumina, and mixtures thereof are preferable, from the viewpoints of increasing the polishing rate and reducing the waviness, and y alumina and O-alumina are more preferable.
The alumina has an average primary particle size of preferably from O.OOS to 0.8 m, more preferably from 0.01 to 0.4 m, from the viewpoint of reducing the waviness, and an average secondary particle size of preferably from 0.01 to 2 m, more preferably from 0.05 to 1.0,um, and even more preferably from 0. 1 s to 0.5 m. The average primary particle size of the abrasive may be obtained by subjecting the abrasive to an image analysis by observing with a scanning electron microscope (preferably from 3000 to 30000 times) or a transmission electron microscope (preferably from 10000 to 300000 times), and determining the particle size. In addition, the average secondary particle size may be determined as a volume-average particle size by using a laser diffraction method.
Especially, when the alumina is an intermediate alumina, the specific surface area determined by the BET method is preferably from 30 to 300 m2/g, more preferably from 50 to 200 m2/g.
The content of the alumina is preferably 0.05% by weight or more, more preferably 0.1% by weight or more, even more preferably 0.5% by weight or more, and even more preferably 1% by weight or more, of the polishing composition, from the viewpoints of increasing the polishing rate and reducing the waviness. Also, the content is preferably 40% by weight or less, more preferably 30% by weight or less, even more preferably 25% by weight or less, and even more preferably 20% by weight or less, of the polishing composition, from the viewpoints of the surface quality and economic advantages.
Specifically, the content of the alumina is preferably from 0.05 to 40% by weight, more preferably from 0.1 to 30% by weight, even more preferably from 0.5 to 25% by weight, and even more preferably from 1 to 20% by weight, of the polishing composition.
The polishing composition of the present invention contains a peroxide, from the viewpoints of benefits such as increasing the polishing rate and reducing the waviness. The peroxide of the present invention is roughly classified into inorganic peroxides and organic peroxides according to their structures. Concrete examples of the peroxides are as follows. As the inorganic peroxides, hydrogen peroxide, peroxides of alkali metals or the alkaline earth metals, such as sodium peroxide, potassium peroxide, calcium peroxide, barium peroxide and magnesium peroxide; peroxocarbonates, such as sodium S peroxocarbonate and potassium peroxocarbonate; peroxosulfuric acids or salts thereof, such as ammonium peroxodisulfate, sodium peroxodisulfate, potassium peroxodisulfate and peroxomonosulfuric acid; peroxonitric acids and salts thereof, such as peroxonitric acid, sodium peroxonitrate and potassium peroxonitrate; peroxophosphoric acids or salts thereof, such as sodium peroxophosphate, potassium peroxophosphate and ammonium peroxophosphate; peroxoboric acids and salts thereof, such as sodium peroxoborate and potassium peroxoborate; peroxochromic acids and salts thereof, such as potassium peroxochromate and sodium peroxochromate; permanganates, such as potassium permanganate and sodium permanganate; halogen-containing oxyacids and derivatives thereof, such as sodium perchlorate, potassium perchlorate, chloric acid, sodium hypochlorite, sodium periodate, potassium periodate, iodic acid and sodium iodate may be used. As the organic peroxides, percarboxylic acids, such as peracetic acid, performic acid and perbenzoic acid; peroxides, such as t-butyl peroxide and cumene peroxide may be used. Among them, the inorganic peroxide is preferable, because of increase in the polishing rate and easy handling such as availability and water- solubility. Moreover, in consideration of the environmental problems, an inorganic peroxide which does not contain a heavy metal is preferable. From the above viewpoint, the inorganic peroxide is more preferable, and hydrogen peroxide, peroxosulfates, halogen-containing oxyacids and salts thereof are even more preferable, and hydrogen peroxide is even more preferable. These peroxides can be used alone or in admixture of two or more kinds.
The content of the peroxide is preferably 0.002% by weight or more, more preferably 0.005% by weight or more, even more preferably 0.007% by weight or more, and even more preferably 0.01% by weight or more, of the polishing composition, from the viewpoints of increasing the polishing rate and reducing the waviness. The content is preferably 20% by weight or less, more preferably 15% by weight or less, even more preferably 10% by weight or less, and even more preferably 5% by weight or less, of the polishing composition, from the viewpoints of the surface quality and economic advantages. Specifically, the content of the peroxide is preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition.
The polishing composition of the present invention contains an organic acid in addition to the alumina and the peroxide, from the viewpoints of benefits such as increasing the polishing rate and reducing the waviness. The organic acid usable in the present invention has a pK1 of preferably 7 or less, more preferably 5 or less, even more preferably 4 or less, and even more preferably 2 or less, from the viewpoints of increasing the polishing rate and reducing the waviness. Here, the pK1 is expressed as a logarithmic value of an inverse of a first acid dissociation constant at 25 C. The pK1 of each compound is listed in Kagaku Binran (Kilo-hen) II, Fourth Revision, pp. 316-325 (Edit. by Nippon Kagakukai), and the like.
As the organic acid preferable in the present invention, sulfurcontaining organic acids, carboxylic acids and phosphor-containing organic acids are preferable, from the viewpoints of increasing the polishing rate, reducing the waviness and preventing the surface stains. Concrete examples thereof are as follows: Monocarboxylic acids, such as formic acid, acetic acid, glycolic acid, lactic acid, propanoic acid, hydroxypropanoic acid, butyric acid, benzoic acid, and glycine; polycarboxylic acids, such as oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, itaconic acid, malic acid, tartaric acid, citric acid, isocitric acid, phthalic acid, nitrilotriacetic acid and ethylenediaminetetraacetic acid; sulfurcontaining organic acids, such as methanesulfonic acid and paratoluenesulfonic acid; phosphor-containing organic acids, such as ethylphosphoric acid, butylphosphoric acid, laurylphosphoric acid, phosphonohydroxyacetic acid, hydroxyethylidene-1,1-diphosphonic acid, phosphonobutane tricarboxylic acid and ethylenediaminetetramethylene phosphoric acid; and the like. Among them, the sulfur-containing organic acids or the phosphor-containing organic acids are preferable, more preferably organic sulfonic acids or organophosphonic acids, and even more preferably organic sulfonic acids, from the viewpoints of increasing the polishing rate and reducing the waviness. Additionally, the sulfurcontaining organic acids and carboxylic acids are preferable, more preferably organic sulfonic acids and polycarboxylic acids, from the viewpoints of preventing the surface stains of the object to be polished.
These compounds can be used alone or in admixture.
The content of the organic acid is preferably 0.002% by weight or more, more preferably 0.005% by weight or more, even more preferably 0.007% by weight or more, and even more preferably 0.01% by weight or more, of the polishing composition, from the viewpoints of increasing the polishing rate and reducing the waviness. Also, the content is preferably 20% by weight or less, more preferably 15% by weight or less, even more preferably 10% by weight or less, and even more preferably 5% by weight or less, of the polishing composition, from the viewpoints of the surface quality and economic advantages. Specifically, the content of the acid is preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition.
Water in the polishing composition of the present invention is used as a medium. The content of water is preferably from 55 to 99% by weight, more preferably from 60 to 97% by weight, and even more preferably from 70 to 95% by weight, from the viewpoint of efficiently polishing the object to be polished.
It is preferable that an inorganic acid is used together in the polishing composition of the present invention, from the viewpoints of further increasing the polishing rate and reducing the waviness. The inorganic acid includes nitrogen-containing inorganic acids, such as nitric acid and nitrous acid; sulfur containing inorganic acids, such as sulfuric acid, sulfurous acid and amide sulfuric acid; phosphor-containing inorganic acids, such as phosphoric acid, pyrophosphoric acid, polyphosphoric acid and phosphoric acid, and the like.
Among them, nitric acid, nitrous acid, sulfuric acid, sulfurous acid and amide sulfuric acid are preferable, more preferably sulfuric acid, sulfurous acid and amide sulfuric acid, and even more preferably sulfuric acid, from the viewpoint of increasing the polishing rate. When the inorganic acid is used together, the content of the inorganic acid is preferably 0.002% by weight or more, more preferably 0.005% by weight or more, even more preferably 0.007% by weight or more, and even more preferably 0.01% by weight or more, of the polishing composition. The content is preferably 20% by weight or less, more preferably 15% by weight or less, even more preferably 10% by weight or less, and even more preferably 5% by weight or less, of the polishing composition, from the viewpoints of the surface quality and economic advantages. Specifically, the content of the inorganic acid is preferably from 0.002 to 20% by weight, more preferably from 0.005 to 15% by weight, even more preferably from 0.007 to 10% by weight, and even more preferably from 0.01 to 5% by weight, of the polishing composition. I In addition, there can be added one or more components such as an inorganic salt, a thickener, an anticorrosive agent or a basic substance to the polishing composition of the present invention, as occasion demands. Especially, i the inorganic salt such as ammonium nitrate, ammonium sulfate, potassium sulfate, nickel sulfate, aluminum sulfate or ammonium sulfaminate has a subsidiary effect for increasing the polishing rate. These other components can be used alone or in admixture of two or more kinds. Also, the content of the I other components is preferably from 0.05 to 20% by weight, more preferably from 0.05 to 10% by weight, and even more preferably from 0.05 to 5% by weight, of the polishing composition, from the viewpoint of economic advantages.
There can be further added one or more components, such as a disinfectant or an antibacterial agent, as occasion demands. The content of the disinfectant or the antibacterial agent is preferably from 0.0001 to 0.1% by weight, more preferably from 0.001 to O.O5o by weight, and even more preferably from 0.002 to 0.02% by weight, of the polishing composition, from the viewpoint of exhibiting its function and from the viewpoints of the influence on polishing performance and economic advantages.
The concentration of each component of the polishing composition of the present invention is a concentration at which polishing is preferably carried out, and may be the concentration during the preparation of the composition. In many cases, the composition is usually prepared as a concentrate, which is diluted before use or upon use.
The polishing composition can be prepared by adding or mixing the intended components by an optional method.
It is preferable that the pH of the polishing composition is appropriately determined depending upon the kinds of the object to be polished and the required properties. The lower the pH, the more preferable, from the viewpoints of increasing the polishing rate and reducing the waviness, and the closer the pH of 7, the more preferable, from the viewpoints of prevention of the corrosion of the processing machine and safety for an operator. Accordingly, considering both viewpoints, the pH is preferably 0.1 or more and less than 6, more preferably 0.5 or more and less than 5, even more preferably 1 or more and less than 4, and even more preferably 1 or more and less than 3. The pH of the polishing composition can be adjusted by properly adding an inorganic acid, such as nitric acid or sulfuric acid; an organic acid, such as a hydroxycarboxylic acid or a polycarboxylic acid, an aminopolycarboxylic acid, an amino acid, a metal salt or an ammonium salt thereof; or a basic substance, such as, an aqueous ammonia, sodium hydroxide, potassium hydroxide or an amine, in a desired amount.
The method for manufacturing a substrate of the present invention includes the step of polishing a substrate to be polished with the above mentioned polishing composition.
The magnetic disk substrate which is the substrate to be polished as a subject for the present invention is used as the substrate for magnetic recording media. Concrete examples of the magnetic disk substrates include representatively a substrate made of an aluminum alloy plated with Ni-P, and there are also included a substrate made of glass or glassy carbon, instead of aluminum alloy, and plated with Ni-P thereon; or a substrate coated with various metallic compounds by plating or deposition, instead of the substrate plated with Ni-P.
In the above-mentioned polishing process, the object to be polished may be polished by clamping a substrate with polishing platens to which a polishing cloth made of a porous organic polymer and the like is pasted; feeding the polishing composition of the present invention to a surface to be polished of the substrate; and moving the polishing platens or the substrate, while applying pressure. Accordingly, the present invention relates to a polishing process for a substrate to be polished, including the step of polishing the substrate with the above-mentioned polishing composition. Other conditions such as the kind of polishing machine, polishing temperature, polishing rate and feed amount of the polishing composition are not particularly limited.
The polishing composition of the present invention is especially effective in the polishing step, and the polishing composition can be similarly applied to other steps than this, for instance, the lapping step, and the like.
s EXAMPLES
The following examples further describe and demonstrate embodiments of the present invention. The examples are given solely for the purposes of illustration and are not to be construed as limitations of the present invention.
Examples 1 to 6. Comparative Examples 1 and 2 1. Preparation of Polishing Composition Given amounts of alumina (average secondary particle size: 0.2 1lm, purity: about 99.9%), a peroxide, an organic acid, other additives as shown in Table 1, and balance ion- exchanged water were formulated while stirring, to give a polishing composition.
2. Polishing Process Each of the polishing compositions obtained in the Examples and Comparative Examples was evaluated for its polishing properties by polishing a Ni-P plated, aluminum alloy substrate having a thickness of 1.27 mm, and a diameter of 3.5 inch (95 mm) (shortwavelength waviness: 3.8 nm and long wavelength waviness: 1.6 nm, as determined by Zygo New-View 200), using a double-sided processing machine under the following setting conditions, to give an object to be polished made of Ni-P plated aluminum alloy substrate usable as a substrate for a magnetic recording medium.
The setting conditions for the double-sided processing machine are as follows.
<Setting Conditions for Double-Sided Processing Machine] Double-sided processing machine: Model 9B, commercially available from SPEEDFAM CO., LTD.
Processing pressure: 9.8 kPa Polishing pad: "H9900" (trade name, commercially available from FUJIBO) Rotational speed of a lower platen: 50 r/min.
Feeding amount for a polishing composition: 100 ml/min Polishing time period: 4 min. Number of substrates introduced: 10 3. Evaluation Methods (1) Polishing Rate Weights of each substrate before and after polishing were measured using a device commercially available from Sartorius under the trade name of BP-210S.
Change in weight of each substrate was obtained, and an average of 10 substrates was referred to as an amount reduced, and a value obtained by dividing the amount reduced by the polishing time is referred to as a rate of weight reduced.
The rate of weight reduced is introduced into the following equation and converted to a polishing rate (pm/min). A relative value of a polishing rate (relative rate) for each of the Examples and Comparative Examples was obtained, assuming that the polishing rate of Comparative Example 1 takes a standard value of 1.
Rate of Weight Reduced (g/min) = [Weight Before Polishing (g) - Weight After Polishing (g)]/ Polishing Time (min) Polishing Rate (pm/min) = Rate of Weight Reduced (g/min)/Area of One Side of Substrate (mm2)/Ni-P Plating Density (g/cm3) x 1000000 (2) Waviness The waviness of each substrate after the polishing was determined for short-wavelength waviness and long-wavelength waviness at two points of 180 intervals (total of 4 points) under the conditions mentioned below.
Device: Zygo New-View 200 commercially available from Canon Sales, Inc. Object Lens: Magnification, 2.5 times, Michelson Zooming Ratio: 0.5 Remove: Cylinder Filter type: FFT Fixed Band Pass - Short-Wavelength Waviness: Filter High Wavelength 50 lam Filter Low Wavelength 500,um Long-Wavelength Waviness: Filter High Wavelength 0.5 mm Filter Low Wavelength 5 mm Area: 4.33 mm x 5.77 mm (3) Surface Stains The surface of each substrate after the polishing was observed with a polarization optical microscope at a magnification of 300- folds, and the following S-rank evaluations were made. Here, those ranked in 1 and 2 are failures from the viewpoint of practical purposes.
S 5: no alumina residue and polishing debris are observed on the surface at all; 4: alumina residue and polishing debris are observed but in very little amounts; 3: alumina residue and polishing debris are observed but in slight amounts; 2: alumina residue and polishing debris are observed but in large amounts; and 1: alumina residue and polishing debris are observed but in very large amounts.
The results are shown in Table 1.
o o to Hi Hi O _1 Àg 3 1 o o 1 1 1 o o _ 'A 1 À= À .= 1 1 1 Ho.o.O 0 = a,, .c
Z _ ^ = 3
=% .= .= ,u =4 0 a - = l l c o.- .- C 2m '=o o= P4 eD_ up V) oc 3 o o o o o o o o :- a= 2 2 2 2 2 2 2 ÀX Pa Pa to 2 2 2 2 2 2 2 À er a.= .= . .5.c.5 as Cc z Z O Hi.
In ' an an Hi Hi Hi Hi om Amp us en = 8 o U) "_ o o o o o o C 6= 3 5= 8 o in, ._ o o o o o o = to o o 4) o l == o.
c en E a 0 Pi Hi i fat It can be seen from the results of Table 1 that the polishing compositions obtained in Examples 1 to 6 have high polishing rates, are capable of reducing both the short-wavelength waviness and the long-wavelength waviness, and further capable of remarkably reducing surface stains of a substrate. s
The polishing composition of the present invention can be suitably used for the manufacture of a magnetic disk substrate for high-quality hard disks and the like.
The present invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.
Claims (8)
- Claims 1. A polishing composition for a magnetic disk, comprising alumina,water, a peroxide and an organic acid. s
- 2. The polishing composition according to claim 1, wherein the organic acid is one or more members selected from sulfur-containing organic acids, carboxylic acids, and phosphorus-containing organic acids.
- 3. The polishing composition according to claim 1 or 2, further comprising an inorganic acid.
- 4. The polishing composition according to claim 1 or 3, wherein the composition has a pH of 0.1 or more and less than 6.
- 5. A polishing process for a substrate to be polished, comprising the step of polishing the substrate to be polished with the polishing composition of claim 1 or 3.
- 6. The polishing process according to claim 5, wherein the substrate to be polished is a substrate produced by plating an aluminum alloy with a Ni-P alloy.
- 7. A process for manufacturing a substrate, comprising the step of polishing a substrate to be polished with the polishing composition of claim 1 or 3.
- 8. The process according to claim 7, wherein the substrate to be polished is a substrate produced by plating an aluminum alloy with a Ni-P alloy.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003290690A JP4206313B2 (en) | 2003-08-08 | 2003-08-08 | Polishing liquid composition for magnetic disk |
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| GB0415976D0 GB0415976D0 (en) | 2004-08-18 |
| GB2404921A true GB2404921A (en) | 2005-02-16 |
| GB2404921B GB2404921B (en) | 2007-09-12 |
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| US (2) | US20050032463A1 (en) |
| JP (1) | JP4206313B2 (en) |
| CN (1) | CN100460478C (en) |
| GB (1) | GB2404921B (en) |
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| TW (1) | TWI343943B (en) |
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| GB2433515B (en) * | 2005-12-22 | 2011-05-04 | Kao Corp | Polishing composition for hard disk substrate |
| US8247326B2 (en) * | 2008-07-10 | 2012-08-21 | Cabot Microelectronics Corporation | Method of polishing nickel-phosphorous |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| JP6366308B2 (en) * | 2014-03-12 | 2018-08-01 | 株式会社ディスコ | Processing method |
| US10144850B2 (en) * | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
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| JP2003218071A (en) * | 2002-01-28 | 2003-07-31 | Sumitomo Bakelite Co Ltd | Composition for polishing |
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|---|---|---|---|---|
| US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6149696A (en) * | 1997-11-06 | 2000-11-21 | Komag, Inc. | Colloidal silica slurry for NiP plated disk polishing |
| WO2000032712A1 (en) * | 1998-11-27 | 2000-06-08 | Kao Corporation | Abrasive fluid compositions |
| KR20010087485A (en) * | 2000-03-07 | 2001-09-21 | 김순택 | Method for driving plasma display panel |
| JP4009986B2 (en) * | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method for polishing memory hard disk using the same |
| EP1211024A3 (en) * | 2000-11-30 | 2004-01-02 | JSR Corporation | Polishing method |
| CN100378145C (en) * | 2001-06-21 | 2008-04-02 | 花王株式会社 | Grinding liquid composition |
| MY133305A (en) * | 2001-08-21 | 2007-11-30 | Kao Corp | Polishing composition |
| MY134679A (en) * | 2002-12-26 | 2007-12-31 | Kao Corp | Polishing composition |
-
2003
- 2003-08-08 JP JP2003290690A patent/JP4206313B2/en not_active Expired - Lifetime
-
2004
- 2004-07-16 GB GB0415976A patent/GB2404921B/en not_active Expired - Fee Related
- 2004-07-20 TW TW093121651A patent/TWI343943B/en active
- 2004-07-23 US US10/896,873 patent/US20050032463A1/en not_active Abandoned
- 2004-08-04 MY MYPI20043152A patent/MY139590A/en unknown
- 2004-08-05 CN CNB2004100562306A patent/CN100460478C/en not_active Expired - Fee Related
-
2005
- 2005-02-22 US US11/062,462 patent/US20050136807A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000212776A (en) * | 1999-01-18 | 2000-08-02 | Jsr Corp | Aqueous dispersion for mechanochemical polishing |
| US20010049913A1 (en) * | 2000-04-17 | 2001-12-13 | Norihiko Miyata | Composition for polishing magnetic disk substrate |
| WO2001098201A2 (en) * | 2000-06-16 | 2001-12-27 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system |
| US20020194789A1 (en) * | 2001-04-27 | 2002-12-26 | Kao Corporation | Polishing composition |
| JP2003151928A (en) * | 2001-11-12 | 2003-05-23 | Sumitomo Bakelite Co Ltd | Polishing composition |
| KR20030057111A (en) * | 2001-12-28 | 2003-07-04 | 제일모직주식회사 | Slurry composition of low erosion for chemical mechanical polishing of metal lines |
| JP2003218071A (en) * | 2002-01-28 | 2003-07-31 | Sumitomo Bakelite Co Ltd | Composition for polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| MY139590A (en) | 2009-10-30 |
| CN1580173A (en) | 2005-02-16 |
| CN100460478C (en) | 2009-02-11 |
| TWI343943B (en) | 2011-06-21 |
| JP4206313B2 (en) | 2009-01-07 |
| GB2404921B (en) | 2007-09-12 |
| US20050136807A1 (en) | 2005-06-23 |
| JP2005063531A (en) | 2005-03-10 |
| TW200517479A (en) | 2005-06-01 |
| GB0415976D0 (en) | 2004-08-18 |
| US20050032463A1 (en) | 2005-02-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20120716 |