TW202140743A - Polishing composition for magnetic disk substrate - Google Patents

Polishing composition for magnetic disk substrate Download PDF

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TW202140743A
TW202140743A TW110113436A TW110113436A TW202140743A TW 202140743 A TW202140743 A TW 202140743A TW 110113436 A TW110113436 A TW 110113436A TW 110113436 A TW110113436 A TW 110113436A TW 202140743 A TW202140743 A TW 202140743A
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abrasive composition
polishing
magnetic disk
particle size
abrasive
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TW110113436A
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安藤順一郎
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日商山口精研工業股份有限公司
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  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

The present invention provides a polishing composition for a magnetic disk substrate, which can maintain high productivity while reducing polishing grains residues or polished debris on the surface of the substrate after a rough polishing step in a multi-stage polishing method, and further reducing fluctuations. The polishing composition is used in a subsequent rough polishing step, which includes colloidal silica, an organic sulfate ester salt compound and water, wherein in the volume-based particle size distribution of the colloidal silica measured by Haywood diameter, the volume cumulative frequency of the particle size of 50 nm is 35% or more, and the volume cumulative frequency of the particle size of 15nm is less than 90%, and the organic sulfate ester salt compound is composed of a specific structure.

Description

磁碟基板用研磨劑組合物Abrasive composition for magnetic disk substrate

本發明係關於一種磁碟基板用研磨劑組合物。特別是關於一種用於研磨半導體、硬碟等的磁記錄媒體等電子零件,特別是用於玻璃磁碟基板或鋁磁碟基板等磁記錄媒體用基板的表面研磨的研磨劑組合物。更詳細而言,係關於一種在以多段研磨方式進行於鋁合金製的基板表面上形成有無電解鎳-磷鍍覆薄膜之磁記錄媒體用鋁磁碟基板的研磨時,在最終研磨步驟之前的粗研磨步驟中使用的磁碟基板用研磨劑組合物。The present invention relates to an abrasive composition for magnetic disk substrates. In particular, it relates to an abrasive composition used for polishing electronic parts such as magnetic recording media such as semiconductors and hard disks, particularly for surface polishing of substrates for magnetic recording media such as glass magnetic disk substrates or aluminum magnetic disk substrates. In more detail, it relates to the polishing of an aluminum magnetic disk substrate for a magnetic recording medium on which an electroless nickel-phosphorus plating film is formed on the surface of an aluminum alloy substrate by a multi-stage polishing method, before the final polishing step. The abrasive composition for a magnetic disk substrate used in the rough polishing step.

近年來,磁碟驅動器邁向小型化、大容量化,而尋求高記錄密度化。於是,必須提升高記錄密度磁信號的檢測感度,而正在開發進一步降低磁頭之浮起高度、縮小單位記錄面積的技術。對於磁碟基板,為了應對磁頭之低浮起化與確保記錄面積,嚴格要求提升平滑性及平坦性(減少表面粗糙度、減少起伏)及減少表面缺陷(減少研磨粒殘渣或研磨屑等附著物、減少刮痕、減少凹陷)。In recent years, magnetic disk drives have been miniaturized and increased in capacity, and higher recording density has been sought. Therefore, it is necessary to improve the detection sensitivity of magnetic signals with high recording density, and technologies to further reduce the flying height of the magnetic head and reduce the unit recording area are being developed. For magnetic disk substrates, in order to cope with the low buoyancy of the magnetic head and ensure the recording area, it is strictly required to improve the smoothness and flatness (reduce surface roughness, reduce undulation) and reduce surface defects (reduce abrasive residues or abrasive debris and other attachments) , Reduce scratches, reduce dents).

對於這種要求,從兼顧減少研磨粒殘渣或減少研磨屑等附著物,並進一步減少起伏等的表面品質提升與生產性提升的觀點出發,提出了藉由使用包含α-氧化鋁、中間氧化鋁的研磨劑組合物,可達成高研磨速度並且減少起伏(專利文獻1)。然而,減少起伏效果並不充分,而正在尋求改善。又,在磁碟基板之研磨方法中,大多採用具有兩階段以上之研磨步驟的多段研磨方式(專利文獻2)。一般而言,多段研磨方式的最終研磨步驟、亦即精研磨步驟中,從減少表面粗糙度、減少刮痕、減少研磨粒殘渣或研磨屑等附著物、減少凹陷等的觀點來看,係使用包含二氧化矽粒子的研磨劑組合物。另一方面,其之前的研磨步驟(亦稱為粗研磨步驟)中,從提升生產性的觀點來看,大多使用包含氧化鋁粒子的研磨劑組合物。In response to this requirement, from the viewpoint of reducing abrasive residues or reducing abrasive swarf and other adhesions, and further reducing the surface quality and productivity such as fluctuations, it has been proposed to use α-alumina and intermediate alumina. The abrasive composition of, can achieve high polishing speed and reduce fluctuations (Patent Document 1). However, the effect of reducing fluctuations is not sufficient, and improvement is being sought. In addition, in the polishing method of magnetic disk substrates, a multi-stage polishing method having two or more polishing steps is often used (Patent Document 2). Generally speaking, in the final polishing step of the multi-stage polishing method, that is, the finishing polishing step, from the viewpoint of reducing surface roughness, reducing scratches, reducing abrasive residues or abrasive debris, and reducing dents, etc. An abrasive composition containing silicon dioxide particles. On the other hand, in the preceding polishing step (also referred to as a rough polishing step), from the viewpoint of improving productivity, a polishing composition containing alumina particles is often used.

然而,進行鋁硬碟基板的研磨時,相較於鋁合金基板,氧化鋁粒子的硬度相當高,因此研磨粒殘渣或研磨屑等附著於基板表面,甚至發生起伏加劇等,此情況對精研磨造成不良影響而成為問題。However, when polishing aluminum hard disk substrates, compared with aluminum alloy substrates, the hardness of aluminum oxide particles is quite high. Therefore, abrasive residues or grinding debris adhere to the surface of the substrate, and even increase the fluctuations. Cause adverse effects and become a problem.

作為此類問題的解決對策,有人揭示了一種研磨方法,係在粗研磨步驟中以同一研磨機進行使用含有氧化鋁之研磨劑組合物的研磨及使用含有膠質氧化矽之研磨劑組合物的研磨(專利文獻4)。 [先前技術文獻]As a solution to this problem, someone has disclosed a polishing method that uses the same grinder to perform polishing using an abrasive composition containing alumina and polishing using an abrasive composition containing colloidal silica in the rough grinding step. (Patent Document 4). [Prior Technical Literature]

專利文獻 專利文獻1:日本特開2005-23266號公報 專利文獻2:日本特開昭62-208869號公報 專利文獻3:日本特開2012-25873號公報 專利文獻4:日本特開2012-43493號公報Patent literature Patent Document 1: Japanese Patent Application Publication No. 2005-23266 Patent Document 2: Japanese Patent Application Laid-Open No. 62-208869 Patent Document 3: Japanese Patent Application Publication No. 2012-25873 Patent Document 4: JP 2012-43493 A

[發明所欲解決之課題][The problem to be solved by the invention]

近年來,隨著磁碟驅動器的大容量化,對基板之表面品質的要求特性變得更加嚴苛,而要求在磁碟基板的研磨步驟中維持高生產性的同時減少基板表面上的研磨粒殘渣或研磨屑等附著物,並進一步減少起伏。然而,上述專利文獻1~4中所提出的發明,難以充分應對所述要求性能。In recent years, with the increase in the capacity of disk drives, the requirements for the surface quality of the substrate have become more stringent, and it is required to maintain high productivity in the polishing step of the disk substrate while reducing the abrasive particles on the substrate surface. Residues or grinding debris and other attachments, and further reduce fluctuations. However, the inventions proposed in the above-mentioned Patent Documents 1 to 4 are difficult to sufficiently cope with the required performance.

於是,本發明之課題係鑒於上述情況,而提供一種磁碟基板用研磨劑組合物,其可實現維持高生產性,同時減少多段研磨方式中的粗研磨步驟後基板表面的研磨粒殘渣或研磨屑等附著物,並進一步減少起伏。 [解決課題之手段]Therefore, the subject of the present invention is to provide an abrasive composition for magnetic disk substrates in view of the above circumstances, which can maintain high productivity while reducing abrasive residues or polishing on the surface of the substrate after the rough polishing step in the multi-stage polishing method. Attachments such as crumbs, and further reduce fluctuations. [Means to solve the problem]

本案發明人對上述課題進行深入研究的結果,發現在多段研磨方式中的粗研磨步驟之後段研磨中,藉由使用以下的磁碟基板用研磨劑組合物,可解決上述課題,進而達成本發明。亦即,本發明係以下的磁碟基板用研磨劑組合物。The inventors of the present case have conducted in-depth research on the above-mentioned problems and found that in the subsequent stage polishing of the rough polishing step in the multi-stage polishing method, the above-mentioned problems can be solved by using the following abrasive composition for magnetic disk substrates, thereby achieving the present invention . That is, the present invention is the following abrasive composition for magnetic disk substrates.

[1] 一種磁碟基板用研磨劑組合物,係在具有下述步驟(1)~(3)且以同一研磨機進行各步驟(1)~(3)的磁碟基板之粗研磨中,用於該步驟(3)的研磨劑組合物B,其含有:膠質氧化矽、有機硫酸酯鹽化合物及水,其中該膠質氧化矽以海伍德(Heywood)直徑所測量的體積基準之粒度分布中,粒徑50nm之體積累積頻率為35%以上,且該粒度分布中,粒徑15nm之體積累積頻率為90%以下,該有機硫酸酯鹽化合物係以下列通式(1)表示: R-O-(AO)n -SO3 M   ・・・ 通式(1) 在上列通式(1)中,R表示碳數5~21的直鏈或分支之烷基、烯基、芳基或烷基芳基,AO表示碳數2或3之氧伸烷基,n表示1~30的自然數,M表示鹼金屬、鹼土金屬、銨離子或有機陽離子。 步驟(1)為將包含α-氧化鋁、中間氧化鋁及水的研磨劑組合物A供給至研磨機,對磁碟基板進行前段粗研磨的步驟 步驟(2)為將上述步驟(1)所得之磁碟基板進行沖洗的步驟 步驟(3)為將含有膠質氧化矽、有機硫酸酯鹽化合物及水的研磨劑組合物B供給至研磨機,對磁碟基板進行後段粗研磨的步驟[1] An abrasive composition for magnetic disk substrates, which has the following steps (1) to (3) and performs each step (1) to (3) with the same grinder for rough polishing of a magnetic disk substrate, The abrasive composition B used in this step (3) contains: colloidal silica, an organic sulfate compound and water, wherein the colloidal silica is in the particle size distribution on the volume basis measured by Heywood diameter , The cumulative volume frequency of the particle size of 50nm is 35% or more, and in the particle size distribution, the volume cumulative frequency of the particle size of 15nm is less than 90%, the organic sulfate ester salt compound is represented by the following general formula (1): RO-( AO) n -SO 3 M ・・・ General formula (1) In the above general formula (1), R represents a linear or branched alkyl, alkenyl, aryl or alkyl aryl group with 5 to 21 carbon atoms AO represents an oxyalkylene group with carbon number 2 or 3, n represents a natural number from 1 to 30, and M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation. Step (1) is the step of supplying the abrasive composition A containing α-alumina, intermediate alumina and water to the grinder, and performing the preliminary rough polishing of the magnetic disk substrate. The step (3) of rinsing the magnetic disk substrate is the step of supplying the abrasive composition B containing colloidal silica, organic sulfate ester salt compound and water to the grinder, and performing the subsequent rough grinding of the magnetic disk substrate

[2] 如上述[1]之磁碟基板用研磨劑組合物,進一步含有脂肪族胺化合物。[2] The abrasive composition for a magnetic disk substrate as in [1] above, further containing an aliphatic amine compound.

[3] 如上述[2]之磁碟基板用研磨劑組合物,其中該脂肪族胺化合物係選自由乙胺、正丙胺、異丙胺、正丁胺、異丁胺、二級丁胺、三級丁胺、環己胺、哌嗪、二乙胺、甲基丙胺、乙基丙胺、三乙胺、乙二胺、1,2-丙二胺、三亞甲二胺、四亞甲二胺、五亞甲二胺、六亞甲二胺、N,N-二甲基乙二胺、N,N’-二甲基乙二胺、N-乙基乙二胺、N,N,N’,N’-四甲基乙二胺、N-甲基-1,3-丙二胺、1,3-二胺戊烷、二伸乙三胺、雙(六亞甲基)三胺、三伸乙三胺、三伸乙四胺、四伸乙五胺、五伸乙六胺及四甲基六亞甲二胺所構成之群組的至少1種。[3] The abrasive composition for magnetic disk substrates as described in [2] above, wherein the aliphatic amine compound is selected from ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, secondary butylamine, tri Grade butylamine, cyclohexylamine, piperazine, diethylamine, methylpropylamine, ethylpropylamine, triethylamine, ethylenediamine, 1,2-propanediamine, trimethylenediamine, tetramethylenediamine, Pentamethylene diamine, hexamethylene diamine, N,N-dimethylethylenediamine, N,N'-dimethylethylenediamine, N-ethylethylenediamine, N,N,N', N'-tetramethylethylenediamine, N-methyl-1,3-propanediamine, 1,3-diaminepentane, diethylenetriamine, bis(hexamethylene)triamine, tertiary At least one of the group consisting of ethylenetriamine, ethylenetetramine, tetraethylenepentamine, pentaethylenehexamine and tetramethylhexamethylenediamine.

[4] 如上述[1]至[3]中任一項之磁碟基板用研磨劑組合物,其進一步含有酸及/或其鹽。[4] The abrasive composition for a magnetic disk substrate according to any one of [1] to [3] above, which further contains an acid and/or a salt thereof.

[5] 如上述[1]至[4]中任一項之磁碟基板用研磨劑組合物,其進一步含有氧化劑。[5] The abrasive composition for a magnetic disk substrate according to any one of [1] to [4] above, which further contains an oxidizing agent.

[6] 如上述[1]至[5]中任一項之磁碟基板用研磨劑組合物,其用於經無電解鎳-磷鍍覆之鋁磁碟基板的粗研磨。 [發明之效果][6] The abrasive composition for magnetic disk substrates according to any one of [1] to [5] above, which is used for rough polishing of aluminum magnetic disk substrates plated with electroless nickel-phosphorus. [Effects of the invention]

藉由使用本發明之磁碟基板用研磨劑組合物,而得到下述效果:可高生產性地製造多段研磨方式中的粗研磨步驟後基板表面上的研磨粒殘渣或研磨屑等附著物減少且起伏減少的基板。By using the abrasive composition for magnetic disk substrates of the present invention, the following effect can be obtained: after the rough polishing step in the multi-stage polishing method can be manufactured with high productivity, the abrasive residues or abrasive debris on the surface of the substrate can be reduced And the substrate with reduced undulation.

以下,對本發明之實施形態進行說明。本發明並不限定於以下實施形態,只要不脫離發明的範圍,可加以變更、修正、改良。Hereinafter, an embodiment of the present invention will be described. The present invention is not limited to the following embodiments, and changes, corrections, and improvements can be made without departing from the scope of the invention.

1.磁碟基板用研磨劑組合物 本發明之一實施形態的磁碟基板用研磨劑組合物(以下簡稱為「研磨劑組合物」)含有膠質氧化矽、有機硫酸酯鹽化合物及水。此處,本實施形態之研磨劑組合物相當於步驟(3)中使用的「研磨劑組合物B」。1. Abrasive composition for magnetic disk substrate The abrasive composition for magnetic disk substrates (hereinafter referred to as "abrasive composition") according to one embodiment of the present invention contains colloidal silica, an organic sulfate compound, and water. Here, the abrasive composition of this embodiment corresponds to the "abrasive composition B" used in step (3).

再者,膠質氧化矽以海伍德直徑所測量的體積基準之粒度分布中,粒徑50nm之體積累積頻率為35%以上,且粒度分布中,粒徑15nm之體積累積頻率為90%以下。Furthermore, in the particle size distribution of colloidal silica on the volume basis measured by the Haywood diameter, the volume accumulation frequency of the particle size 50nm is more than 35%, and in the particle size distribution, the volume accumulation frequency of the particle size 15nm is less than 90%.

另一方面,有機硫酸酯鹽化合物係以下列通式(1)表示的化合物。 R-O-(AO)n -SO3 M  ・・・通式(1)On the other hand, the organic sulfate ester salt compound is a compound represented by the following general formula (1). RO-(AO) n -SO 3 M ・・・General formula (1)

在上列通式(1)中,R表示碳數5~21的直鏈或分支之烷基、烯基、芳基或烷基芳基,AO表示碳數2或3之氧伸烷基,n表示1~30的自然數,M表示鹼金屬、鹼土金屬、銨離子或有機陽離子。In the above general formula (1), R represents a linear or branched alkyl, alkenyl, aryl or alkylaryl group having 5 to 21 carbons, and AO represents an oxyalkylene group with 2 or 3 carbons, n represents a natural number from 1 to 30, and M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation.

再者,本實施形態之研磨劑組合物亦可包含脂肪族胺化合物、酸及/或其鹽、氧化劑、其他添加劑作為任意成分。Furthermore, the abrasive composition of this embodiment may contain an aliphatic amine compound, an acid and/or its salt, an oxidizing agent, and other additives as optional components.

本實施形態之研磨劑組合物係在具有下述步驟(1)~(3)且以同一研磨機進行各步驟(1)~(3)的磁碟基板之粗研磨中,作為用於步驟(3)的研磨劑組合物B使用。 步驟(1)為將包含α-氧化鋁、中間氧化鋁及水的研磨劑組合物A供給至研磨機,對磁碟基板進行前段粗研磨的步驟。 步驟(2)為將上述步驟(1)所得之磁碟基板進行沖洗的步驟。 步驟(3)為將含有膠質氧化矽、有機硫酸酯鹽化合物及水的研磨劑組合物B供給至研磨機,對磁碟基板進行後段粗研磨的步驟。 以下分別詳細說明。The abrasive composition of this embodiment is used as the step ( 3) The abrasive composition B is used. Step (1) is a step of supplying the abrasive composition A containing α-alumina, intermediate alumina, and water to the grinder, and performing the preliminary rough polishing of the magnetic disk substrate. Step (2) is a step of washing the magnetic disk substrate obtained in the above step (1). Step (3) is a step of supplying the abrasive composition B containing colloidal silica, an organic sulfate ester salt compound, and water to the grinder, and performing the subsequent rough polishing on the magnetic disk substrate. Detailed descriptions are given below.

1-1.膠質氧化矽 本實施形態之研磨劑組合物(=研磨劑組合物B)中使用的膠質氧化矽,例如可由水玻璃法而得:以矽酸鈉、矽酸鉀等矽酸鹼金屬鹽為原料,使該原料在水溶液中進行縮合反應而使粒子成長。1-1. Colloidal silica The colloidal silica used in the abrasive composition (= abrasive composition B) of this embodiment can be obtained, for example, by the water glass method: using alkali metal silicates such as sodium silicate and potassium silicate as raw materials, the The raw material undergoes a condensation reaction in an aqueous solution to grow particles.

或者,亦可由利用烷氧矽烷法而得的方法或金屬矽與水的反應而得,該烷氧矽烷法係以四乙氧基矽烷等烷氧矽烷為原料,藉由使該原料在含有醇等水溶性有機溶劑的水中,以酸或鹼的水解進行縮合反應而使粒子成長。Alternatively, it can also be obtained by the method obtained by the alkoxysilane method or by the reaction of metal silicon with water. In water such as a water-soluble organic solvent, the condensation reaction proceeds by hydrolysis of acid or alkali to grow particles.

此處,已知膠質氧化矽有球狀、鏈狀、金平糖型、不規則狀等形狀,其一次粒子單分散於水中而形成膠狀。在本實施形態之研磨劑組合物中,該膠質氧化矽的形狀較佳為球狀或接近球狀。Here, it is known that colloidal silica has a spherical shape, a chain shape, a candy shape, an irregular shape, and the like, and its primary particles are monodispersed in water to form a colloidal shape. In the abrasive composition of this embodiment, the colloidal silica is preferably spherical or nearly spherical in shape.

使用之膠質氧化矽的平均粒徑(D50)較佳為10~100nm,更佳為20~80nm。再者,以海伍德直徑所測量的體積基準之粒度分布中,粒徑50nm之體積累積頻率為35%以上,且粒度分布中,粒徑15nm之體積累積頻率為90%以下。The average particle size (D50) of the colloidal silica used is preferably 10-100 nm, more preferably 20-80 nm. Furthermore, in the particle size distribution on the volume basis measured by the Haywood diameter, the volume accumulation frequency of the particle size 50nm is 35% or more, and in the particle size distribution, the volume accumulation frequency of the particle size 15nm is 90% or less.

本說明書中的體積累積頻率(%)與一般使用的定義相同,係表示在以作為對象之粒子集合體中粒徑最小的粒子為起點,依照粒徑大小的順序累積體積而成的分布中,具有某數值以下之粒徑的粒子之總體積相對於作為對象的全部粒子之總體積所占的比例(%)。The volume accumulation frequency (%) in this specification is the same as the generally used definition. It means that the volume is accumulated in the order of the particle size from the particle with the smallest particle size in the target particle assembly. The ratio (%) of the total volume of particles having a particle diameter below a certain value relative to the total volume of all the target particles.

例如,粒徑15nm之體積累積頻率為50%時,意為粒徑15nm以下之粒子的總體積占全部粒子總體積的50%。此外,海伍德直徑係分析藉由電子顯微鏡觀察而得的影像,並求出投射面積等效圓直徑所得的結果,以往已為習知。For example, when the cumulative frequency of the volume with a particle diameter of 15 nm is 50%, it means that the total volume of particles with a particle diameter of 15 nm or less accounts for 50% of the total volume of all particles. In addition, Haywood's diameter is the result of analyzing the image obtained by observation with an electron microscope and finding the equivalent circle diameter of the projected area, which has been conventionally known in the past.

本實施形態之研磨劑組合物所含有的膠質氧化矽,其粒徑50nm以上之大粒子與粒徑15nm以下之小粒子相對於粒子整體所占的比例被抑制為較少。將這種粒度分布的膠質氧化矽供給至藉由研磨墊進行研磨之對象物的表面時,容易充分地保持於研磨墊。In the colloidal silica contained in the abrasive composition of the present embodiment, the proportion of large particles with a particle size of 50 nm or more and small particles with a particle size of 15 nm or less relative to the entire particle is suppressed to be small. When colloidal silica having such a particle size distribution is supplied to the surface of an object to be polished by the polishing pad, it is easy to be sufficiently held in the polishing pad.

又,由於呈上述粒度分布,故膠質氧化矽與對象物表面之間所產生的間隙具有小於殘留研磨粒或研磨屑等的傾向。因此,殘留研磨粒或研磨屑不易逃入膠質氧化矽與對象物表面的間隙中,殘留研磨粒或研磨屑與膠質氧化矽的碰撞頻率變高,而能夠有效地從對象物表面去除殘留研磨粒或研磨屑等。In addition, due to the above-mentioned particle size distribution, the gap formed between the colloidal silica and the surface of the object tends to be smaller than the remaining abrasive grains or abrasive dust. Therefore, the residual abrasive grains or grinding debris cannot easily escape into the gap between the colloidal silica and the surface of the object, and the collision frequency between the residual abrasive grains or grinding debris and the colloidal silica becomes higher, and the residual abrasive particles can be effectively removed from the surface of the object. Or grinding scraps and so on.

再者,藉由確保相當數量的粒徑50nm以下之膠質氧化矽的粒子,容易形成在一膠質氧化矽與對象物表面之間的間隙中使另一小粒徑之膠質氧化矽進入的狀態。藉此,殘留研磨粒或研磨屑等不易逃入膠質氧化矽與對象物表面的間隙中,而容易從對象物表面去除。又,膠質氧化矽為球狀或接近球狀形狀,故有不易附著或扎入對象物表面的傾向。因此,膠質氧化矽本身不易殘留於對象物表面。Furthermore, by ensuring a considerable number of colloidal silica particles with a particle size of 50 nm or less, it is easy to form a state in which colloidal silica with a smaller particle size enters in the gap between one colloidal silica and the surface of the object. As a result, the remaining abrasive grains, abrasive dust, etc. are not likely to escape into the gap between the colloidal silica and the surface of the object, and are easily removed from the surface of the object. In addition, colloidal silica has a spherical or nearly spherical shape, so it tends to be difficult to adhere to or penetrate into the surface of an object. Therefore, colloidal silica itself does not easily remain on the surface of the object.

研磨劑組合物中的膠質氧化矽的濃度較佳為0.1~20質量%,更佳為0.2~10質量%。The concentration of colloidal silica in the abrasive composition is preferably 0.1-20% by mass, more preferably 0.2-10% by mass.

1-2.有機硫酸酯鹽化合物 用於研磨劑組合物的有機硫酸酯鹽化合物,如上文已顯示,係上列通式(1)所表示之化合物。1-2. Organic sulfate ester compound The organic sulfate ester salt compound used in the abrasive composition, as shown above, is the compound represented by the above general formula (1).

此處,在上列通式(1)中,n較佳為2~4的自然數。再者,作為上列通式(1)中的M的具體例,可列舉:鈉或鉀等鹼金屬、鈣或鎂等鹼土金屬、銨離子、4級銨離子或三乙醇胺等有機胺等。Here, in the above general formula (1), n is preferably a natural number from 2 to 4. In addition, specific examples of M in the above general formula (1) include alkali metals such as sodium or potassium, alkaline earth metals such as calcium or magnesium, ammonium ions, quaternary ammonium ions, or organic amines such as triethanolamine.

再者,作為上列通式(1)所表示之有機硫酸酯鹽化合物的具體例,可列舉:氧乙烯三癸醚硫酸鹽(每1分子中氧乙烯基為2個或3個)、氧乙烯月桂醚硫酸鹽(每1分子中氧乙烯基為2個或3個)、氧乙烯壬醚硫酸鹽(每1分子中氧乙烯基為3個)、氧乙烯辛基苯基醚硫酸鹽(每1分子中氧乙烯基為3個)、氧乙烯壬基苯基醚硫酸鹽(每1分子中氧乙烯基為3個)等,特佳為使用氧乙烯三癸醚硫酸鹽(每1分子中氧乙烯基為3個)、氧乙烯月桂醚硫酸鹽(每1分子中氧乙烯基為3個)、氧乙烯辛基苯基醚硫酸鹽(每1分子中氧乙烯基為3個)、氧乙烯壬基苯基醚硫酸鹽(每1分子中氧乙烯基為3個)。Furthermore, as specific examples of the organic sulfate ester compound represented by the general formula (1) above, oxyethylene tridecyl ether sulfate (2 or 3 oxyethylene groups per molecule), oxygen Ethylene lauryl ether sulfate (2 or 3 oxyethylene groups per molecule), oxyethylene nonyl ether sulfate (3 oxyethylene groups per molecule), oxyethylene octyl phenyl ether sulfate ( 3 oxyethylene groups per molecule), oxyethylene nonylphenyl ether sulfate (3 oxyethylene groups per molecule), etc. It is particularly preferable to use oxyethylene tridecyl ether sulfate (per molecule The number of oxyethylene groups is 3), oxyethylene lauryl ether sulfate (3 oxyethylene groups per molecule), oxyethylene octyl phenyl ether sulfate (3 oxyethylene groups per molecule), Oxyethylene nonylphenyl ether sulfate (3 oxyethylene groups per molecule).

再者,有機硫酸酯鹽化合物在本實施形態之研磨劑組合物中含有1種或組合2種以上皆無妨。In addition, it does not matter if the organic sulfate ester salt compound is contained in the abrasive composition of this embodiment singly or in combination of two or more kinds.

此外,有機硫酸酯鹽化合物在研磨劑組合物中的含量一般為0.0001~2.0質量%,較佳為0.0005~1.0質量%。In addition, the content of the organic sulfate ester salt compound in the abrasive composition is generally 0.0001 to 2.0% by mass, preferably 0.0005 to 1.0% by mass.

1-3.脂肪族胺化合物 本實施形態之研磨劑組合物可添加脂肪族胺化合物作為任意成分。作為脂肪族胺化合物的具體例,可列舉:乙胺、正丙胺、異丙胺、正丁胺、異丁胺、二級丁胺、三級丁胺、環己胺、哌嗪、二乙胺、甲基丙胺、乙基丙胺、三乙胺、乙二胺、1,2-丙二胺、三亞甲二胺、四亞甲二胺、五亞甲二胺、六亞甲二胺、N,N-二甲基乙二胺、N,N’-二甲基乙二胺、N-乙基乙二胺、N,N,N’,N’-四甲基乙二胺、N-甲基-1,3-丙二胺、1,3-二胺戊烷、二伸乙三胺、雙(六亞甲基)三胺、三伸乙三胺、三伸乙四胺、四伸乙五胺、五伸乙六胺、四甲基六亞甲二胺等。1-3. Aliphatic amine compounds The abrasive composition of this embodiment can add an aliphatic amine compound as an optional component. Specific examples of aliphatic amine compounds include ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, secondary butylamine, tertiary butylamine, cyclohexylamine, piperazine, diethylamine, Methylpropylamine, ethylpropylamine, triethylamine, ethylenediamine, 1,2-propanediamine, trimethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, N,N -Dimethylethylenediamine, N,N'-dimethylethylenediamine, N-ethylethylenediamine, N,N,N',N'-tetramethylethylenediamine, N-methyl- 1,3-propanediamine, 1,3-diaminepentane, ethylenetriamine, bis(hexamethylene)triamine, ethylenetriamine, ethylenetetramine, tetraethylenepentamine , Pentaethylenehexamine, tetramethylhexamethylenediamine, etc.

脂肪族胺化合物可含有選自上述之群組的1種或組合2種以上。研磨劑組合物中的脂肪族胺化合物的含量一般為0.00001~4.0質量%,較佳為0.0001~2.0質量%。The aliphatic amine compound may contain one kind selected from the above-mentioned group or a combination of two or more kinds. The content of the aliphatic amine compound in the abrasive composition is generally 0.00001 to 4.0% by mass, preferably 0.0001 to 2.0% by mass.

1-4.酸及/或其鹽 再者,本實施形態之研磨劑組合物亦可含有酸及/或其鹽,用於調整pH值或作為任意成分。此處,作為酸及/或其鹽,可列舉:無機酸及/或其鹽與有機酸及/或其鹽等。1-4. Acid and/or its salt Furthermore, the abrasive composition of the present embodiment may also contain acid and/or its salt for adjusting the pH value or as an optional component. Here, as an acid and/or its salt, an inorganic acid and/or its salt, an organic acid and/or its salt, etc. are mentioned.

作為無機酸及/或其鹽的具體例,可列舉:硝酸、硫酸、鹽酸、磷酸、膦酸、焦磷酸及三聚磷酸等。該等酸及/或其鹽可使用1種或2種以上。Specific examples of inorganic acids and/or their salts include nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, phosphonic acid, pyrophosphoric acid, tripolyphosphoric acid, and the like. One kind or two or more kinds of these acids and/or their salts can be used.

另一方面,作為有機酸及/或其鹽的具體例,可列舉:麩胺酸、天冬胺酸等胺基羧酸及/或其鹽、檸檬酸、酒石酸、草酸、硝乙酸、馬來酸、蘋果酸、琥珀酸等羧酸及/或其鹽、有機膦酸及/或其鹽。該等酸及/或其鹽可使用1種或2種以上。On the other hand, specific examples of organic acids and/or their salts include amino carboxylic acids such as glutamic acid and aspartic acid and/or their salts, citric acid, tartaric acid, oxalic acid, nitroacetic acid, and maleic acid. Carboxylic acids such as acid, malic acid, and succinic acid and/or their salts, organic phosphonic acid and/or their salts. One kind or two or more kinds of these acids and/or their salts can be used.

再者,作為有機膦酸及/或其鹽的具體例,可列舉選自2-胺基乙基膦酸、1-羥基亞乙基-1,1-二膦酸、胺基三(亞甲基膦酸)、乙二胺四(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、乙烷-1,1-二膦酸、乙烷-1,1,2-三膦酸、乙烷-1-羥基-1,1,2-三膦酸、乙烷-1,2-二羧基-1,2-二膦酸、甲烷羥基膦酸、2-膦醯基丁烷-1,2-二羧酸、1-膦醯基丁烷-2,3,4-三羧酸、α-甲基膦醯基琥珀酸及其鹽的至少1種以上的化合物。Furthermore, as specific examples of the organic phosphonic acid and/or its salt, it may be selected from the group consisting of 2-aminoethylphosphonic acid, 1-hydroxyethylene-1,1-diphosphonic acid, aminotri(methylene) Phosphonic acid), ethylene diamine tetra (methylene phosphonic acid), diethylene triamine penta (methylene phosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2 -Triphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methane hydroxyphosphonic acid, 2-phosphonic acid At least one compound of butane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, α-methylphosphonosuccinic acid and salts thereof.

將上述化合物組合2種以上使用亦為較佳實施態樣,具體而言,可列舉:硫酸及/或其鹽與有機膦酸及/或其鹽的組合、磷酸及/或其鹽與有機膦酸及/或其鹽的組合等。Combining two or more of the above-mentioned compounds is also a preferred embodiment. Specifically, examples include: a combination of sulfuric acid and/or its salt and organophosphonic acid and/or its salt, phosphoric acid and/or its salt and organophosphine Combinations of acids and/or their salts, etc.

1-5.氧化劑 本實施形態之研磨劑組合物亦可進一步含有氧化劑作為研磨促進劑。作為氧化劑的具體例,可使用過氧化物、過錳酸或其鹽、鉻酸或其鹽、過氧酸或其鹽、鹵素含氧酸或其鹽、氧酸或其鹽及將該等氧化劑2種以上混合而成者等。1-5. Oxidizer The abrasive composition of this embodiment may further contain an oxidizing agent as a polishing accelerator. As specific examples of the oxidizing agent, peroxide, permanganic acid or its salt, chromic acid or its salt, peroxy acid or its salt, halogen oxyacid or its salt, oxyacid or its salt, and such oxidizing agents can be used. A mixture of two or more types, etc.

若進一步具體說明,可列舉:過氧化氫、過氧化鈉、過氧化鋇、過氧化鉀、過錳酸鉀、鉻酸之金屬鹽、二鉻酸之金屬鹽、過硫酸、過硫酸鈉、過硫酸鉀、過硫酸銨、過氧磷酸、過氧硼酸鈉、過甲酸、過醋酸、次氯酸、次氯酸鈉及次氯酸鈣等。該等之中,尤其較佳為使用過氧化氫、過硫酸及其鹽及次氯酸及其鹽等,再佳為使用過氧化氫。If further specified, it can be enumerated: hydrogen peroxide, sodium peroxide, barium peroxide, potassium peroxide, potassium permanganate, metal salt of chromic acid, metal salt of dichromic acid, persulfuric acid, sodium persulfate, persulfate Potassium sulfate, ammonium persulfate, peroxyphosphoric acid, sodium peroxyborate, performic acid, peracetic acid, hypochlorous acid, sodium hypochlorite and calcium hypochlorite, etc. Among these, hydrogen peroxide, persulfuric acid and its salts, hypochlorous acid and its salts, etc. are particularly preferred, and hydrogen peroxide is even more preferred.

研磨劑組合物中的氧化劑含量較佳為0.01~10.0質量%。更佳為0.1~5.0質量%。The content of the oxidizing agent in the abrasive composition is preferably 0.01 to 10.0% by mass. More preferably, it is 0.1 to 5.0% by mass.

2. 研磨劑組合物的物性(pH值) 研磨劑組合物的pH值(25℃)的範圍較佳為0.1~4.0。更佳為0.5~3.0。藉由使研磨劑組合物的pH值(25℃)為0.1以上,可抑制表面粗糙。藉由使研磨劑組合物的pH值(25℃)為4.0以下,可抑制研磨速度降低。2. The physical properties of the abrasive composition (pH value) The pH value (25°C) of the abrasive composition is preferably in the range of 0.1 to 4.0. More preferably, it is 0.5 to 3.0. By making the pH value (25°C) of the polishing agent composition 0.1 or more, surface roughness can be suppressed. By setting the pH value (25°C) of the polishing agent composition to 4.0 or less, it is possible to suppress a decrease in polishing rate.

本實施形態之研磨劑組合物可用於研磨硬碟等的磁記錄媒體等各種電子零件。特別適合用於研磨鋁磁碟基板。更可適用於研磨經無電解鎳-磷鍍覆之鋁磁碟基板。無電解鎳-磷鍍覆,一般係在pH值(25℃)為4~6的條件下進行鍍覆。若在pH值(25℃)為4以下的條件下,則有鎳溶解的傾向,而難以鍍覆。另一方面,關於研磨,例如,若在pH值(25℃)為4以下的條件下,則具有鎳溶解的傾向,故可期待藉由使用本實施形態之研磨劑組合物來提高研磨速度。The abrasive composition of this embodiment can be used to polish various electronic parts such as magnetic recording media such as hard disks. It is especially suitable for grinding aluminum magnetic disk substrates. It is more suitable for grinding aluminum magnetic disk substrates plated with electroless nickel-phosphorus. Electroless nickel-phosphorus plating is generally carried out at a pH value (25°C) of 4-6. If the pH value (25°C) is 4 or less, nickel tends to dissolve, making plating difficult. On the other hand, regarding polishing, for example, if the pH (25°C) is 4 or less, nickel tends to dissolve. Therefore, it can be expected that the polishing rate can be increased by using the polishing composition of this embodiment.

3. 磁碟基板之研磨方法 本實施形態之研磨劑組合物適合用於研磨鋁磁碟基板或玻璃磁碟基板等磁碟基板。特別適合用於研磨經無電解鎳-磷鍍覆之鋁磁碟基板。3. Grinding method of disk substrate The abrasive composition of this embodiment is suitable for polishing magnetic disk substrates such as aluminum magnetic disk substrates or glass magnetic disk substrates. It is especially suitable for grinding aluminum magnetic disk substrates coated with electroless nickel-phosphorus.

研磨劑組合物係在包含多段研磨方式中的粗研磨步驟與精加工步驟的磁碟基板之研磨方法中,利用以下步驟(1)至步驟(3)的三個階段進行粗研磨步驟時,於步驟(3)中使用的研磨劑組合物B。作為具體的研磨方法,例如有:將研磨墊貼附於研磨機的壓板,並將研磨劑組合物供給至研磨對象物之研磨表面或研磨墊,以研磨墊摩擦研磨表面的方法。例如,同時研磨磁碟基板的正面與背面時,有使用雙面研磨機,於上壓板及下壓板分別貼附研磨墊的方法。此方法中係以貼附於上壓板及下壓板之研磨墊夾住磁碟基板,並將研磨劑組合物供給至研磨面與研磨墊之間,使兩個研磨墊同時旋轉,藉此研磨磁碟基板的正面與背面。研磨墊亦可使用胺基甲酸酯型、麂皮絨(suede)型、不織布型、其他任意類型。The abrasive composition is a method for polishing a magnetic disk substrate that includes a rough polishing step and a finishing step in a multi-stage polishing method. When the rough polishing step is performed in the following three stages from step (1) to step (3), The abrasive composition B used in step (3). As a specific polishing method, for example, there is a method of attaching a polishing pad to a platen of a polishing machine, supplying the polishing agent composition to the polishing surface or polishing pad of the object to be polished, and rubbing the polishing surface with the polishing pad. For example, when polishing the front and back sides of a magnetic disk substrate at the same time, there is a method of using a double-sided polishing machine to attach polishing pads to the upper pressing plate and the lower pressing plate, respectively. In this method, the magnetic disk substrate is clamped by polishing pads attached to the upper and lower pressing plates, and the abrasive composition is supplied between the polishing surface and the polishing pad, and the two polishing pads are rotated at the same time, thereby polishing the magnetic The front and back of the disc substrate. The polishing pad can also be of urethane type, suede type, non-woven type, and any other types.

步驟(1):前段粗研磨 其係將含有α-氧化鋁、中間氧化鋁及水的研磨劑組合物A供給至研磨機,進行前段粗研磨的步驟,係使被研磨對象基板的研磨對象面與研磨墊接觸,移動研磨墊及/或被研磨對象基板來將該研磨對象面進行研磨的步驟。Step (1): rough grinding of the front section This is to supply the abrasive composition A containing α-alumina, intermediate alumina, and water to the polishing machine, and perform the first rough polishing step. The polishing target surface of the substrate to be polished is brought into contact with the polishing pad, and the polishing pad is moved. And/or the step of polishing the surface to be polished by the substrate to be polished.

此步驟中使用的研磨劑組合物A係含有α-氧化鋁、中間氧化鋁及水的研磨劑組合物,再者,與研磨劑組合物B(本實施形態之研磨劑組合物)相同,可視需求適當包含有機硫酸酯鹽化合物、酸及/或其鹽、氧化劑等作為任意成分。The abrasive composition A used in this step is an abrasive composition containing α-alumina, intermediate alumina, and water. Furthermore, it is the same as the abrasive composition B (the abrasive composition of this embodiment). It is necessary to appropriately include an organic sulfate ester salt compound, an acid and/or its salt, an oxidizing agent, etc. as optional components.

用於步驟(1)之研磨劑組合物A含有α-氧化鋁及中間氧化鋁,再者,作為中間氧化鋁,可列舉:γ-氧化鋁、δ-氧化鋁、θ-氧化鋁等。又,α-氧化鋁與中間氧化鋁的混合比,較佳為中間氧化鋁/α-氧化鋁(質量比)=0.05~2.0的範圍,更佳為0.1~1.0的範圍,再佳為0.15~0.5的範圍。The abrasive composition A used in the step (1) contains α-alumina and intermediate alumina, and as intermediate alumina, γ-alumina, δ-alumina, θ-alumina, etc. can be mentioned. In addition, the mixing ratio of α-alumina and intermediate alumina is preferably in the range of intermediate alumina/α-alumina (mass ratio)=0.05 to 2.0, more preferably in the range of 0.1 to 1.0, and still more preferably 0.15 to The range of 0.5.

此處,氧化鋁的平均粒徑較佳為0.1~2.0μm的範圍,更佳為0.2~1.0μm的範圍。藉由使氧化鋁的平均粒徑為0.1μm以上,可抑制研磨速度降低。另一方面,藉由使氧化鋁的平均粒徑為2.0μm以下,可抑制研磨後的起伏加劇。Here, the average particle diameter of alumina is preferably in the range of 0.1 to 2.0 μm, more preferably in the range of 0.2 to 1.0 μm. By setting the average particle diameter of alumina to be 0.1 μm or more, it is possible to suppress a decrease in the polishing rate. On the other hand, by setting the average particle size of alumina to 2.0 μm or less, it is possible to suppress the increase in fluctuations after polishing.

再者,研磨劑組合物A中的氧化鋁的濃度較佳為1~50質量%的範圍,更佳為2~40質量%的範圍。藉由使研磨劑組合物A中的氧化鋁的濃度為1質量%以上,可抑制研磨速度降低。另一方面,藉由使氧化鋁的濃度為50質量%以下,可避免使用不必要的氧化鋁,以節省研磨劑組合物A的成本,而可更經濟地進行研磨。Furthermore, the concentration of alumina in the abrasive composition A is preferably in the range of 1 to 50% by mass, and more preferably in the range of 2 to 40% by mass. By making the concentration of alumina in the polishing agent composition A 1% by mass or more, it is possible to suppress a decrease in the polishing rate. On the other hand, by setting the alumina concentration to 50% by mass or less, unnecessary alumina can be avoided, the cost of the abrasive composition A can be saved, and the polishing can be performed more economically.

再者,研磨劑組合物A中的氧化劑含量較佳為0.01~10.0質量%的範圍,更佳為0.1~5.0質量%的範圍。Furthermore, the content of the oxidizing agent in the abrasive composition A is preferably in the range of 0.01 to 10.0% by mass, and more preferably in the range of 0.1 to 5.0% by mass.

另一方面,研磨劑組合物A的pH值(25℃)較佳為0.1~4.0的範圍,再佳為0.5~3.0的範圍。On the other hand, the pH value (25°C) of the abrasive composition A is preferably in the range of 0.1 to 4.0, and more preferably in the range of 0.5 to 3.0.

步驟(2):將步驟(1)所得之基板進行沖洗的步驟 從減少多段研磨方式中的粗研磨步驟後基板表面之起伏的觀點來看,於上述步驟(1)後,在同一的研磨機中實施將該步驟(1)所得之基板進行沖洗的步驟(2)。此處,用於沖洗基板的沖洗液並無特別限制,但從經濟性的觀點來看,主要使用蒸餾水、離子交換水、純水及超純水等水。此時,步驟(2)中,從生產性的觀點來看,不將被研磨基板從步驟(1)中使用之研磨機取出,而在相同的研磨機內進行。Step (2): the step of washing the substrate obtained in step (1) From the viewpoint of reducing the fluctuation of the substrate surface after the rough polishing step in the multi-stage polishing method, after the above step (1), the step (2) of washing the substrate obtained in the step (1) is carried out in the same polishing machine. ). Here, the rinsing liquid used for rinsing the substrate is not particularly limited, but from an economical point of view, water such as distilled water, ion-exchanged water, pure water, and ultrapure water is mainly used. At this time, in step (2), from the viewpoint of productivity, the substrate to be polished is not taken out from the grinder used in step (1), but is performed in the same grinder.

步驟(3):後段粗研磨 從減少多段研磨方式中的粗研磨步驟後研磨粒殘渣或研磨屑等附著物及減少起伏的觀點出發,將含有膠質氧化矽、有機硫酸酯鹽化合物及水的研磨劑組合物B(相當於本實施形態之研磨劑組合物)供給至經由上述步驟(2)之沖洗步驟的基板之研磨對象面,在研磨對象面上移動研磨墊及/或被研磨對象基板來實施將研磨對象面進行研磨的步驟(3)。此時,從提升生產性的觀點及減少粗研磨步驟後研磨粒殘渣或研磨屑等附著物及減少起伏的觀點來看出發,上述步驟(1)~(3)皆在同一研磨機中實施。 [實施例]Step (3): After-stage rough grinding From the viewpoint of reducing the adhesion of abrasive residues or abrasive dusts after the rough polishing step in the multi-stage polishing method and reducing undulations, the abrasive composition B (corresponding to this The polishing composition of the embodiment) is supplied to the polishing target surface of the substrate after the rinsing step of the above step (2), and the polishing pad and/or the substrate to be polished are moved on the polishing target surface to perform polishing of the polishing target surface Step (3). At this time, from the viewpoint of improving productivity and reducing the adhesion of abrasive residues or grinding chips after the rough grinding step, and reducing fluctuations, the above steps (1) to (3) are all implemented in the same grinding machine. [Example]

以下,根據實施例具體說明本發明,但本發明並不限定於該等實施例,只要屬於本發明的技術範圍,則能夠以各種態樣實施,此自不待言。Hereinafter, the present invention will be described in detail based on embodiments, but the present invention is not limited to these embodiments. As long as it falls within the technical scope of the present invention, it can be implemented in various ways, and it goes without saying.

研磨劑組合物的製備 下述所示之實施例1~7及比較例1~5所使用的研磨劑組合物,係藉由以下列表1所記載之含量包含表1所記載之材料而構成的研磨劑組合物(=研磨劑組合物B)。此處,平均粒徑的測量方法、步驟(1)中的前段研磨條件、步驟(2)中的沖洗條件及步驟(3)中的後段粗研磨條件如下所示。Preparation of abrasive composition The abrasive composition used in Examples 1 to 7 and Comparative Examples 1 to 5 shown below is an abrasive composition composed of the content described in Table 1 below and the material described in Table 1 (= Abrasive composition B). Here, the measurement method of the average particle size, the first-stage grinding conditions in step (1), the rinsing conditions in step (2), and the latter rough grinding conditions in step (3) are as follows.

表1 使用材料 研磨劑組合物中的含量 使用實驗例 α-氧化鋁(平均粒徑(D50):0.43μm) 4.0質量% 實施例1~7、比較例1~5 中間氧化鋁(平均粒徑(D50):0.45μm) 1.0質量% 實施例1~7、比較例1~5 膠質氧化矽(平均粒徑(D50):50nm)、粒度特性範圍內 4.0質量% 實施例1~5、比較例3~5 體積累積頻率(50nm)=49%       體積累積頻率(15nm)=1% 膠質氧化矽(平均粒徑(D50):11nm)、粒度特性範圍內 4.0質量% 實施例6 體積累積頻率(50nm)=94%       體積累積頻率(15nm)=81% 膠質氧化矽(平均粒徑(D50):56nm)、粒度特性範圍內 4.0質量% 實施例7 體積累積頻率(50nm)=43%       體積累積頻率(15nm)=8% 膠質氧化矽(平均粒徑(D50):10nm)、粒度特性範圍外 4.0質量% 比較例1 體積累積頻率(50nm)=100%      體積累積頻率(15nm)=99% 膠質氧化矽(平均粒徑(D50):105nm)、粒度特性範圍外 4.0質量% 比較例2 體積累積頻率(50nm)=30%       體積累積頻率(15nm)=24% 聚氧乙烯三癸醚硫酸鈉(第一工業製藥製:HITENOL 330T) 0.005質量% 實施例1、4~7、比較例1、2 聚氧乙烯三癸醚硫酸鈉(第一工業製藥製:HITENOL 330T) 0.02質量% 實施例2 聚氧乙烯三癸醚硫酸鈉(第一工業製藥製:HITENOL 330T) 0.05質量% 實施例3 月桂基硫酸鈉(東邦化學製:Alscope LS-30) 0.005質量% 比較例4 月桂基硫酸鈉(東邦化學製:Alscope LS-30) 0.05質量% 比較例5 五伸乙六胺 0.005質量% 實施例4 五伸乙六胺 0.02質量% 實施例5 硫酸(前段研磨:研磨劑組合物A) 1.4質量% 實施例1~7、比較例1~5 硫酸(後段研磨:研磨劑組合物B) 0.3質量% 實施例1~7、比較例1~5 過氧化氫(前段研磨:研磨劑組合物A) 1.3質量% 實施例1~7、比較例1~5 過氧化氫(後段研磨:研磨劑組合物B) 0.3質量% 實施例1~7、比較例1~5 Table 1 Materials used Content in abrasive composition Use experimental examples α-Alumina (average particle size (D50): 0.43μm) 4.0 mass% Examples 1~7, Comparative Examples 1~5 Intermediate alumina (average particle size (D50): 0.45μm) 1.0 mass% Examples 1~7, Comparative Examples 1~5 Colloidal silica (average particle size (D50): 50nm), within the range of particle size characteristics 4.0 mass% Examples 1~5, Comparative Examples 3~5 Volume accumulation frequency (50nm)=49% Volume accumulation frequency (15nm)=1% Colloidal silica (average particle size (D50): 11nm), within the range of particle size characteristics 4.0 mass% Example 6 Volume accumulation frequency (50nm)=94% Volume accumulation frequency (15nm)=81% Colloidal silica (average particle size (D50): 56nm), within the range of particle size characteristics 4.0 mass% Example 7 Volume accumulation frequency (50nm)=43% Volume accumulation frequency (15nm)=8% Colloidal silica (average particle size (D50): 10nm), outside the range of particle size characteristics 4.0 mass% Comparative example 1 Volume accumulation frequency (50nm)=100% Volume accumulation frequency (15nm)=99% Colloidal silica (average particle size (D50): 105nm), outside the range of particle size characteristics 4.0 mass% Comparative example 2 Volume accumulation frequency (50nm)=30% Volume accumulation frequency (15nm)=24% Polyoxyethylene tridecyl ether sodium sulfate (manufactured by Daiichi Kogyo Pharmaceutical: HITENOL 330T) 0.005 mass% Examples 1, 4~7, Comparative Examples 1, 2 Polyoxyethylene tridecyl ether sodium sulfate (manufactured by Daiichi Kogyo Pharmaceutical: HITENOL 330T) 0.02% by mass Example 2 Polyoxyethylene tridecyl ether sodium sulfate (manufactured by Daiichi Kogyo Pharmaceutical: HITENOL 330T) 0.05 mass% Example 3 Sodium Lauryl Sulfate (Toho Chemicals: Alscope LS-30) 0.005 mass% Comparative example 4 Sodium Lauryl Sulfate (Toho Chemicals: Alscope LS-30) 0.05 mass% Comparative example 5 Pentaethylenehexamine 0.005 mass% Example 4 Pentaethylenehexamine 0.02% by mass Example 5 Sulfuric acid (pre-grinding: abrasive composition A) 1.4% by mass Examples 1~7, Comparative Examples 1~5 Sulfuric acid (post-grinding: abrasive composition B) 0.3% by mass Examples 1~7, Comparative Examples 1~5 Hydrogen peroxide (pre-polishing: abrasive composition A) 1.3% by mass Examples 1~7, Comparative Examples 1~5 Hydrogen peroxide (post-polishing: abrasive composition B) 0.3% by mass Examples 1~7, Comparative Examples 1~5

平均粒徑 氧化鋁的平均粒徑係使用雷射繞射式粒度分布測量裝置(島津製作所股份有限公司製SALD2200)所測量。氧化鋁的平均粒徑係以體積為基準而從小粒徑側開始的累積粒徑分布成為50%的平均粒徑(D50)。The average particle size The average particle size of alumina was measured using a laser diffraction particle size distribution measuring device (SALD2200 manufactured by Shimadzu Corporation). The average particle size of alumina is the average particle size (D50) at which the cumulative particle size distribution from the small particle size side is 50% based on the volume.

膠質氧化矽的粒徑(海伍德直徑)係使用穿透式電子顯微鏡(TEM)(日本電子股份有限公司製,穿透式電子顯微鏡 JEM2000FX(200kV))拍攝倍率10萬倍的視野,並使用分析軟體(Mountech Co.,Ltd.股份有限公司製,Mac-View Ver. 4.0)分析該影像,藉此測量海伍德直徑(投射面積等效圓直徑)。膠質氧化矽的平均粒徑係在上述方法中分析2000個左右的膠質氧化矽的粒子,其係使用上述分析軟體(Mountech Co.,Ltd.製,Mac-View Ver. 4.0),算出小粒徑側開始的累積粒徑分布(累積體積基準)成為50%的粒徑所算出的平均粒徑(D50)。The particle size (Haywood diameter) of colloidal silica was taken using a transmission electron microscope (TEM) (manufactured by JEOL Co., Ltd., a transmission electron microscope JEM2000FX (200kV)) with a field of view of 100,000 times magnification and used for analysis. The software (made by Mountech Co., Ltd., Mac-View Ver. 4.0) analyzes the image, thereby measuring the Haywood diameter (equivalent circle diameter of the projected area). The average particle size of colloidal silica is analyzed by the above method of about 2000 colloidal silica particles, which is calculated by using the above analysis software (manufactured by Mountech Co., Ltd., Mac-View Ver. 4.0) The cumulative particle size distribution (accumulated volume basis) starting from the side becomes the average particle size (D50) calculated from the particle size of 50%.

前段粗研磨條件 將無電解鎳-磷鍍覆的外徑95mm之鋁磁碟基板(以下簡稱鋁碟)作為研磨對象,在下述研磨條件下進行研磨。 研磨機:SpeedFam Company Limited製,9B雙面研磨機 研磨墊:FILWEL CO.,LTD.製,P1墊片 壓板旋轉數:  上壓板         -7.5rpm 下壓板         22.5rpm 研磨劑組合物供給量:        100ml/min 研磨時間:                      4.5分 加工壓力:                      100g/cm2 此外,前段研磨中使用研磨劑組合物A。The first rough polishing conditions used an electroless nickel-phosphorus-plated aluminum disk substrate with an outer diameter of 95 mm (hereinafter referred to as aluminum disk) as the polishing object, and polished under the following polishing conditions. Grinding machine: manufactured by SpeedFam Company Limited, 9B double-sided grinder Polishing pad: manufactured by FILWEL CO., LTD., P1 gasket platen rotation number: upper plate-7.5 rpm lower plate 22.5 rpm Abrasive composition supply: 100ml/min Grinding time: 4.5 minutes Processing pressure: 100 g/cm 2 In addition, the abrasive composition A was used in the first-stage grinding.

沖洗條件 研磨機:與前段粗研磨相同 研磨墊:與前段粗研磨相同 壓板旋轉數:與前段粗研磨相同 沖洗液供給量:3L/min 沖洗時間:20秒 加工壓力:15g/cm2 此外,沖洗液使用純水。Washing conditions: Grinding machine: same as the previous rough grinding. Grinding pad: same as the previous rough grinding. Number of platen rotations: same as the previous rough grinding. Washing fluid supply: 3L/min. Washing time: 20 seconds. Processing pressure: 15g/cm 2 In addition, washing Use pure water for the liquid.

後段粗研磨條件 研磨機:與前段粗研磨相同 研磨墊:與前段粗研磨相同 壓板旋轉數:與前段粗研磨相同 研磨劑組合物供給量:100ml/min 研磨時間:80秒 加工壓力:100g/cm2 此外,後段研磨中使用研磨劑組合物B。Rear rough grinding conditions: Grinding machine: the same as the previous rough grinding. Grinding pad: the same as the previous rough grinding. Number of rotations of the platen: the same as the previous rough grinding. Supply amount of abrasive composition: 100ml/min. Grinding time: 80 seconds. Processing pressure: 100g/cm 2 In addition, the abrasive composition B was used in the subsequent polishing.

根據上述條件,以實施例1~7及比較例1~5的研磨劑組合物進行研磨試驗的結果分別顯示於下述表2。此處,關於根據研磨試驗結果而得的研磨速度比、附著物計數比及起伏比的評價項目,係根據下述進行評價。According to the above conditions, the results of the polishing test with the abrasive compositions of Examples 1 to 7 and Comparative Examples 1 to 5 are shown in Table 2 below, respectively. Here, the evaluation items of the polishing speed ratio, the attached matter count ratio, and the undulation ratio obtained from the results of the polishing test were evaluated according to the following.

表2 實施例    /比較例 前段研磨(氧化鋁研磨粒) 後段研磨(二氧化矽研磨粒) 研磨試驗結果 研磨劑組合物A 研磨劑組合物B α-氧化鋁 中間氧化鋁 膠質氧化矽 有機硫酸酯鹽化合物 脂肪族胺化合物 研磨速度比 附著物計數比 起伏比 平均粒徑 D50(μm) 濃度 質量% 平均粒徑 D50(μm) 濃度 質量% 平均粒徑 D50(nm) 體積累積頻率 體積累積頻率 種類 濃度 質量% 種類 濃度 質量% (比較例3=1) (比較例3=1) (比較例3=1)   50nm(%) 15nm(%)   實施例1 0.43 4.0 0.45 1.0 50 49 1 330T 0.005 - - 1.00 0.89 0.98     實施例2 0.43 4.0 0.45 1.0 50 49 1 330T 0.02 - - 1.00 0.81 0.98     實施例3 0.43 4.0 0.45 1.0 50 49 1 330T 0.05 - - 0.98 0.70 0.93     實施例4 0.43 4.0 0.45 1.0 50 49 1 330T 0.005 PEHA 0.005 1.01 0.10 0.98     實施例5 0.43 4.0 0.45 1.0 50 49 1 330T 0.005 PEHA 0.02 0.98 0.08 0.98     實施例6 0.43 4.0 0.45 1.0 11 94 81 330T 0.005 - - 0.94 0.22 1.00     實施例7 0.43 4.0 0.45 1.0 56 43 8 330T 0.005 - - 0.96 0.78 0.98     比較例1 0.43 4.0 0.45 1.0 10 100 99 330T 0.005 - - 0.81 2.60 1.10   × × ×   比較例2 0.43 4.0 0.45 1.0 105 30 24 330T 0.005 - - 0.84 0.62 1.12   × ×   比較例3 0.43 4.0 0.45 1.0 50 49 1 - - - - 1.00 (0.184μm/min) 1.00 (8755) 1.00 (0.92Å)   - - -   比較例4 0.43 4.0 0.45 1.0 50 49 1 LS-30 0.005 - - 1.02 1.09 1.00   ×   比較例5 0.43 4.0 0.45 1.0 50 49 1 LS-30 0.05 - - 0.99 1.52 0.97   ×   330T:聚氧乙烯三癸醚硫酸鈉(第一工業製藥製:HITENOL 330T)   LS-30:月桂基硫酸鈉(東邦化學製:Alscope LS-30)   PEHA:五伸乙六胺   Table 2 Examples/Comparative Examples Front grinding (alumina abrasive grains) Post-polishing (silica abrasive grains) Grinding test results Abrasive composition A Abrasive composition B α-alumina Intermediate alumina Colloidal silica Organic Sulfate Compound Aliphatic amine compound Grinding speed ratio Attachment count ratio Fluctuation ratio Average particle size D50 (μm) Concentration mass% Average particle size D50 (μm) Concentration mass% Average particle size D50 (nm) Volume accumulation frequency Volume accumulation frequency type Concentration mass% type Concentration mass% (Comparative example 3=1) (Comparative example 3=1) (Comparative example 3=1) 50nm(%) 15nm(%) Example 1 0.43 4.0 0.45 1.0 50 49 1 330T 0.005 - - 1.00 0.89 0.98 Example 2 0.43 4.0 0.45 1.0 50 49 1 330T 0.02 - - 1.00 0.81 0.98 Example 3 0.43 4.0 0.45 1.0 50 49 1 330T 0.05 - - 0.98 0.70 0.93 Example 4 0.43 4.0 0.45 1.0 50 49 1 330T 0.005 PEHA 0.005 1.01 0.10 0.98 Example 5 0.43 4.0 0.45 1.0 50 49 1 330T 0.005 PEHA 0.02 0.98 0.08 0.98 Example 6 0.43 4.0 0.45 1.0 11 94 81 330T 0.005 - - 0.94 0.22 1.00 Example 7 0.43 4.0 0.45 1.0 56 43 8 330T 0.005 - - 0.96 0.78 0.98 Comparative example 1 0.43 4.0 0.45 1.0 10 100 99 330T 0.005 - - 0.81 2.60 1.10 X X X Comparative example 2 0.43 4.0 0.45 1.0 105 30 twenty four 330T 0.005 - - 0.84 0.62 1.12 X X Comparative example 3 0.43 4.0 0.45 1.0 50 49 1 - - - - 1.00 (0.184μm/min) 1.00 (8755) 1.00 (0.92Å) - - - Comparative example 4 0.43 4.0 0.45 1.0 50 49 1 LS-30 0.005 - - 1.02 1.09 1.00 X Comparative example 5 0.43 4.0 0.45 1.0 50 49 1 LS-30 0.05 - - 0.99 1.52 0.97 X 330T: Polyoxyethylene tridecyl ether sodium sulfate (manufactured by Daiichi Kogyo Pharmaceutical: HITENOL 330T) LS-30: Sodium Lauryl Sulfate (Toho Chemicals: Alscope LS-30) PEHA: Pentaethylenehexamine

研磨速度的評價(研磨速度比) 研磨速度係測量研磨後減少的鋁碟質量,再根據下式而算出。 研磨速度(μm/min)=鋁碟質量減少量(g)/研磨時間(min)/鋁碟單面的面積(cm2 )/無電解鎳-磷鍍覆薄膜的密度(g/cm3 )/2×104 (其中,上式中,鋁碟單面的面積為65.9cm2 ,無電解鎳-磷鍍覆薄膜的密度為8.0g/cm3 )Evaluation of polishing rate (polishing rate ratio) The polishing rate is calculated by measuring the mass of the aluminum disc reduced after polishing, and then calculating it according to the following formula. Grinding speed (μm/min) = reduction in mass of aluminum disc (g) / grinding time (min) / area of one side of aluminum disc (cm 2 ) / density of electroless nickel-phosphorus coating film (g/cm 3 ) /2×10 4 (In the above formula, the area of one side of the aluminum dish is 65.9cm 2 , and the density of the electroless nickel-phosphorus coating film is 8.0g/cm 3 )

將依據上式所求出的比較例3之研磨速度的實測值(0.184μm/min)設為1(基準),根據此時的相對值,依照下述基準評價實施例1~7及比較例1~5之研磨劑組合物的研磨速度比。 ○:相對於比較例3(=1),研磨速度比為0.95以上 ∆:相對於比較例3(=1),研磨速度比在0.85以上且小於0.95的範圍 ×:相對於比較例3(=1),研磨速度比小於0.85 上述中分別表示下述評價:「○」為具有與比較例3同等或其以上的研磨速度,「∆」為具有實用上沒有問題的研磨速度,「×」為研磨速度拙劣。The actual measurement value (0.184μm/min) of the polishing speed of Comparative Example 3 obtained from the above formula is set to 1 (reference), and the relative values at this time are used to evaluate Examples 1 to 7 and the comparative example according to the following standards The polishing rate ratio of the abrasive composition from 1 to 5. ○: Compared to Comparative Example 3 (=1), the polishing rate ratio is 0.95 or more ∆: Compared to Comparative Example 3 (=1), the polishing rate ratio is in the range of 0.85 or more and less than 0.95 ×: Compared to Comparative Example 3 (=1), the polishing rate ratio is less than 0.85 The above indicates the following evaluations respectively: "○" means having a polishing speed equal to or higher than that of Comparative Example 3, "Δ" means having a practically no problem polishing speed, and "×" means a poor polishing speed.

附著物的評價(附著物計數比) 為了評價研磨後鋁碟基板表面上有無研磨粒殘渣或研磨屑等附著物,使用掃描式電子顯微鏡,根據下述條件評價為附著物計數。 測量裝置:日本電子股份有限公司製,場發射型掃描式電子顯微鏡「JSM-7100」 測量條件:加速電壓 15kV、觀測倍率 2萬倍 測量方法:將進行至後段研磨為止的鋁磁碟基板在上述裝置及條件下,以基板上的研磨粒殘渣或研磨屑等附著物看起來呈白色的對比度讀取二次電子影像。使用照片修飾軟體,將讀取之影像進行黑白二值化後,計算白色部分的像素,計數為附著物個數。Evaluation of attachments (attachment count ratio) In order to evaluate the presence or absence of abrasive residues or abrasive debris on the surface of the aluminum disc substrate after polishing, a scanning electron microscope was used to evaluate the attached matter count according to the following conditions. Measuring device: Field emission scanning electron microscope "JSM-7100" manufactured by JEOL Ltd. Measurement conditions: acceleration voltage 15kV, observation magnification 20,000 times Measurement method: Under the above-mentioned equipment and conditions, the aluminum magnetic disk substrate that has been polished until the later stage is used to read the secondary electron image with the contrast that the abrasive residues or abrasive debris on the substrate appear white. Use photo retouching software to convert the read image into black and white binarization, then count the pixels in the white part and count as the number of attachments.

將使用上述方法所求出的比較例3之附著物計數值(8755)設為1(基準),根據此時的相對值,依照下述基準評價實施例1~7及比較例1~5的研磨劑組合物而得的附著物計數比。 ◎:相對於比較例3(=1),附著物計數比小於0.2 ○:相對於比較例3(=1),附著物計數比在0.2以上且小於0.9的範圍 ∆:相對於比較例3(=1),附著物計數比在0.9以上且小於1.0的範圍 ×:相對於比較例3(=1),附著物計數比為1.0以上 上述中分別表示下述評價:◎為附著物計數明顯少於比較例3,「○」為比較例3以下而附著物計數較少者,「∆」為與比較例3為相同程度但實用上沒有問題,「×」為實用上出現問題。The attached matter count value (8755) of Comparative Example 3 obtained by the above method is set to 1 (reference), and based on the relative value at this time, the following standards are used to evaluate the values of Examples 1 to 7 and Comparative Examples 1 to 5 Adhesion count ratio obtained from the abrasive composition. ◎: Compared to Comparative Example 3 (=1), the attached matter count ratio is less than 0.2 ○: Relative to Comparative Example 3 (=1), the attached matter count ratio is in the range of 0.2 or more and less than 0.9 ∆: Compared with Comparative Example 3 (=1), the attachment count ratio is in the range of 0.9 or more and less than 1.0 ×: Relative to Comparative Example 3 (=1), the attached matter count ratio is 1.0 or more The above respectively indicate the following evaluations: ◎ means that the count of attachments is significantly less than that of Comparative Example 3, "○" means that the count of attachments is less than that of Comparative Example 3, and "∆" is the same level as that of Comparative Example 3 but practically No problem, "×" means a practical problem.

起伏比的評價 鋁碟的起伏係使用利用AMETEK, Inc.公司製掃描式白光干涉法的三維表面結構分析顯微鏡進行測量。測量條件為AMETEK, Inc.公司製測量裝置(New View 8300(透鏡:1.4倍、變焦:1.0倍)),波長為500~1000μm,測量區域為6mm×6mm,使用AMETEK, Inc.公司製分析軟體(Mx)進行分析。Evaluation of fluctuation ratio The undulation of the aluminum dish was measured using a three-dimensional surface structure analysis microscope using a scanning white light interferometry manufactured by AMETEK, Inc. The measurement conditions are the measuring device made by AMETEK, Inc. (New View 8300 (lens: 1.4 times, zoom: 1.0 times)), the wavelength is 500~1000μm, the measurement area is 6mm×6mm, and the analysis software made by AMETEK, Inc. is used. (Mx) for analysis.

將使用上述方法所求出的比較例3之起伏的實測值的值(0.92Å)設為1(基準),根據此時的相對值,依照下述基準評價實施例1~7及比較例1~5的研磨劑組合物而得的起伏比。 ○:相對於比較例3(=1),起伏比小於1.01 ∆:相對於比較例3(=1),起伏比在1.01以上且小於1.10的範圍 ×:相對於比較例3(=1),起伏比為1.10以上 上述中分別表示下述評價:「○」為具有與比較例3同等或更好的起伏,「∆」為具有實用上沒有問題的起伏,「×」為起伏拙劣。The actual measured value (0.92Å) of the undulation of Comparative Example 3 obtained using the above method was set to 1 (reference), and the relative values at this time were used to evaluate Examples 1 to 7 and Comparative Example 1 according to the following standards ~5 undulation ratio of the abrasive composition. ○: Relative to Comparative Example 3 (=1), the undulation ratio is less than 1.01 ∆: Compared with Comparative Example 3 (=1), the fluctuation ratio is in the range of 1.01 or more and less than 1.10 ×: Compared to Comparative Example 3 (=1), the fluctuation ratio is 1.10 or more The above respectively indicate the following evaluations: "○" means having undulations equal to or better than that of Comparative Example 3, "∆" means having undulations that are not problematic for practical use, and "×" means undulations are inferior.

研究 關於比較例3,其膠質氧化矽的粒度分布在本發明之範圍內,但使用不含特定有機硫酸酯鹽化合物的研磨劑組合物,因此在研磨速度、附著物計數、起伏等研磨性能的平衡上,結果不及含有具有特定結構之有機硫酸酯鹽化合物的實施例1~3。換言之,本發明的效果除了膠質氧化矽的粒度分布在特定範圍內以外,作為一態樣,係藉由使用含有具有特定結構之有機硫酸酯鹽化合物的研磨劑組合物而得以發揮。此外,實施例6、7係相對於實施例1的研磨劑組合物,使用膠質氧化矽的粒度特性不同之研磨劑組合物的結果。Research Regarding Comparative Example 3, the particle size distribution of colloidal silica is within the scope of the present invention, but an abrasive composition that does not contain a specific organic sulfate salt compound is used, so the balance of polishing performance, such as polishing speed, adhesion count, and fluctuations, is used. Above, the results are inferior to Examples 1 to 3 containing organic sulfate ester salt compounds with specific structures. In other words, the effect of the present invention is achieved by using an abrasive composition containing an organic sulfate compound having a specific structure, except that the particle size distribution of colloidal silica is within a specific range. In addition, Examples 6 and 7 are the results of using abrasive compositions with different particle size characteristics of colloidal silica compared to the abrasive composition of Example 1.

然而,使用與本發明之研磨劑組合物不同、含有不具特定結構之有機硫酸酯鹽化合物的研磨劑組合物的比較例4、5,相對於比較例3,尤其呈現附著物計數比未改善的結果。However, Comparative Examples 4 and 5 using abrasive compositions that are different from the abrasive composition of the present invention and contain organic sulfate ester salt compounds with no specific structure, compared to Comparative Example 3, particularly show that the adhesion count ratio is not improved result.

另一方面,即使係含有具有特定結構之有機硫酸酯鹽化合物的研磨劑組合物,膠質氧化矽的粒度特性不滿足本發明之研磨劑組合物中所規定之條件的比較例1、2,相對於實施例1,亦呈現研磨速度及起伏的平衡不佳的結果。On the other hand, even if it is an abrasive composition containing an organic sulfate ester salt compound with a specific structure, the particle size characteristics of colloidal silica do not satisfy the conditions specified in the abrasive composition of the present invention in Comparative Examples 1 and 2, compared to In Example 1, there is also a poor balance between the polishing speed and the fluctuations.

使用在實施例1的研磨劑組合物中進一步加入脂肪族胺化合物作為任意成分之研磨劑組合物的實施例4、5的情況,確認相對於實施例1的附著物計數比(0.89)大幅減少(實施例4=0.10及實施例5=0.08),可知基板表面上的研磨粒殘渣或研磨屑等附著物大幅減少。亦即表示添加脂肪族胺化合物有助於大幅減少附著物。In the case of Examples 4 and 5 in which an aliphatic amine compound was further added as an optional component to the abrasive composition of Example 1, it was confirmed that the adhesion count ratio (0.89) was significantly reduced compared to Example 1. (Example 4=0.10 and Example 5=0.08), it can be seen that adhesions such as abrasive residues or abrasive swarf on the surface of the substrate are greatly reduced. This means that the addition of aliphatic amine compounds helps greatly reduce adhesions.

由以上結論明顯可知,藉由使用本發明之研磨劑組合物,能夠平衡地達成提升研磨速度、減少基板表面上的研磨粒殘渣或研磨屑等附著物、改善起伏。此外,同時達成提升研磨速度、減少基板表面上的研磨粒殘渣或研磨屑等附著物、改善起伏並不容易。藉由本發明之研磨劑組合物而發揮下述優異的效果:可高生產性地製造多段研磨方式中的粗研磨步驟後基板表面上的研磨粒殘渣或研磨屑等附著物以及起伏減少的基板。 [產業上的可利用性]From the above conclusions, it is obvious that by using the abrasive composition of the present invention, it is possible to achieve a balanced increase in the polishing speed, reduction of abrasive residues or abrasive debris on the surface of the substrate, and improvement of undulation. In addition, it is not easy to simultaneously increase the polishing speed, reduce the abrasive residues or abrasive debris on the substrate surface, and improve the undulation. The abrasive composition of the present invention exerts the following excellent effects: it is possible to produce a substrate with reduced undulations, such as abrasive residues or abrasive dust, on the surface of the substrate after the rough polishing step in the multi-stage polishing method with high productivity. [Industrial availability]

本發明之研磨劑組合物可用於半導體、硬碟等的磁記錄媒體等電子零件的研磨。特別可用於玻璃磁碟基板或鋁磁碟基板等的磁記錄媒體用基板的表面研磨。再者,可用於在鋁合金製基板表面上形成有無電解鎳-磷鍍覆薄膜之磁記錄媒體用鋁磁碟基板的表面研磨。The abrasive composition of the present invention can be used for polishing electronic parts such as magnetic recording media such as semiconductors and hard disks. Particularly, it can be used to polish the surface of magnetic recording medium substrates such as glass magnetic disk substrates and aluminum magnetic disk substrates. Furthermore, it can be used to polish the surface of an aluminum magnetic disk substrate for a magnetic recording medium on which an electroless nickel-phosphorus plating film is formed on the surface of an aluminum alloy substrate.

無。none.

無。none.

Claims (6)

一種磁碟基板用研磨劑組合物,係在具有下述步驟(1)~(3)且以同一研磨機進行各步驟(1)~(3)的磁碟基板之粗研磨中,用於該步驟(3)的研磨劑組合物B,其含有:膠質氧化矽、有機硫酸酯鹽化合物及水, 其中該膠質氧化矽以海伍德直徑所測量的體積基準之粒度分布中,粒徑50nm之體積累積頻率為35%以上,且該粒度分布中,粒徑15nm之體積累積頻率為90%以下, 該有機硫酸酯鹽化合物係以下列通式(1)表示: R-O-(AO)n -SO3 M   ・・・ 通式(1) 在上列通式(1)中,R表示碳數5~21的直鏈或分支之烷基、烯基、芳基或烷基芳基,AO表示碳數2或3之氧伸烷基,n表示1~30的自然數,M表示鹼金屬、鹼土金屬、銨離子或有機陽離子; 步驟(1)為將包含α-氧化鋁、中間氧化鋁及水的研磨劑組合物A供給至研磨機,對磁碟基板進行前段粗研磨的步驟; 步驟(2)為將上述步驟(1)所得之磁碟基板進行沖洗的步驟; 步驟(3)為將含有膠質氧化矽、有機硫酸酯鹽化合物及水的研磨劑組合物B供給至研磨機,對磁碟基板進行後段粗研磨的步驟。An abrasive composition for magnetic disk substrates, which is used in the rough grinding of magnetic disk substrates with the following steps (1) to (3) and each step (1) to (3) performed by the same grinder The abrasive composition B of step (3), which contains: colloidal silica, organic sulfate ester salt compound and water, wherein the colloidal silica has a volume of 50 nm in the particle size distribution based on the volume measured by the Haywood diameter The cumulative frequency is more than 35%, and in the particle size distribution, the volume cumulative frequency of 15nm particle size is less than 90%. The organic sulfate ester salt compound is represented by the following general formula (1): RO-(AO) n -SO 3 M ・・・ General formula (1) In the above general formula (1), R represents a linear or branched alkyl, alkenyl, aryl or alkylaryl group with 5 to 21 carbon atoms, and AO represents the carbon number 2 or 3 oxyalkylene groups, n represents a natural number from 1 to 30, and M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation; step (1) is to combine α-alumina, intermediate alumina and water The abrasive composition A is supplied to the grinder, and the disk substrate is subjected to the first rough polishing step; step (2) is the step of washing the disk substrate obtained in the above step (1); step (3) is the step of rinsing the disk substrate The abrasive composition B of silicon oxide, an organic sulfate ester salt compound, and water is supplied to a grinder, and the magnetic disk substrate is subjected to a subsequent rough polishing step. 如請求項1之磁碟基板用研磨劑組合物,其進一步含有脂肪族胺化合物。The abrasive composition for magnetic disk substrates of claim 1, which further contains an aliphatic amine compound. 如請求項2之磁碟基板用研磨劑組合物,其中該脂肪族胺化合物係選自由乙胺、正丙胺、異丙胺、正丁胺、異丁胺、二級丁胺、三級丁胺、環己胺、哌嗪、二乙胺、甲基丙胺、乙基丙胺、三乙胺、乙二胺、1,2-丙二胺、三亞甲二胺、四亞甲二胺、五亞甲二胺、六亞甲二胺、N,N-二甲基乙二胺、N,N’-二甲基乙二胺、N-乙基乙二胺、N,N,N’,N’-四甲基乙二胺、N-甲基-1,3-丙二胺、1,3-二胺戊烷、二伸乙三胺、雙(六亞甲基)三胺、三伸乙三胺、三伸乙四胺、四伸乙五胺、五伸乙六胺及四甲基六亞甲二胺所構成之群組的至少1種。According to claim 2, the abrasive composition for magnetic disk substrates, wherein the aliphatic amine compound is selected from ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, secondary butylamine, tertiary butylamine, Cyclohexylamine, piperazine, diethylamine, methylpropylamine, ethylpropylamine, triethylamine, ethylenediamine, 1,2-propanediamine, trimethylenediamine, tetramethylenediamine, pentamethylenediamine Amine, hexamethylenediamine, N,N-dimethylethylenediamine, N,N'-dimethylethylenediamine, N-ethylethylenediamine, N,N,N',N'-tetra Methylethylenediamine, N-methyl-1,3-propanediamine, 1,3-diaminepentane, diethylenetriamine, bis(hexamethylene)triamine, triethylenetriamine, At least one of the group consisting of ethylenetetramine, tetraethylenepentamine, pentaethylenehexamine and tetramethylhexamethylenediamine. 如請求項1至3中任一項之磁碟基板用研磨劑組合物,其進一步含有酸及/或其鹽。The abrasive composition for a magnetic disk substrate according to any one of claims 1 to 3, which further contains an acid and/or a salt thereof. 如請求項1至4中任一項之磁碟基板用研磨劑組合物,其進一步含有氧化劑。The abrasive composition for a magnetic disk substrate according to any one of claims 1 to 4, which further contains an oxidizing agent. 如請求項1至5中任一項之磁碟基板用研磨劑組合物,其用於經無電解鎳-磷鍍覆之鋁磁碟基板的粗研磨。The abrasive composition for a magnetic disk substrate according to any one of claims 1 to 5, which is used for rough polishing of an aluminum magnetic disk substrate plated with electroless nickel-phosphorus.
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