JP2009245580A - Polishing liquid composition - Google Patents

Polishing liquid composition Download PDF

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JP2009245580A
JP2009245580A JP2009119022A JP2009119022A JP2009245580A JP 2009245580 A JP2009245580 A JP 2009245580A JP 2009119022 A JP2009119022 A JP 2009119022A JP 2009119022 A JP2009119022 A JP 2009119022A JP 2009245580 A JP2009245580 A JP 2009245580A
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JP4949432B2 (en
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Shigeo Fujii
滋夫 藤井
Kenichi Suenaga
憲一 末永
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Kao Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing liquid composition with which abrasive grains and polishing residues produced during polishing scarcely remain on a polished substrate after the finish of polishing, which has high polishing speed, and with which the smoothness of the substrate is maintained, and to provide a method of manufacturing the substrate for which the polishing liquid composition is used. <P>SOLUTION: The method of manufacturing the substrate for a hard disk has steps to supply the polishing liquid composition comprising an organic nitrogen compound having two or more amino groups and/or imino groups in the molecule, an organic polybasic acid, an abrasive, and water to the substrate, and to polish the substrate by using a polishing pad. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、研磨液組成物、及び該研磨液組成物を用いる基板の製造方法に関する。   The present invention relates to a polishing liquid composition and a method for producing a substrate using the polishing liquid composition.

近年、ハードディスクは、最小記録面積を小さくし高容量化を推進するために、磁気ヘッドの浮上量を小さくすることや表面欠陥(表面汚れ)防止が求められている。   In recent years, hard disks have been required to reduce the flying height of the magnetic head and prevent surface defects (surface contamination) in order to reduce the minimum recording area and increase the capacity.

そこで、従来では、研磨時において、ハードディスク用基板の表面をより平滑に研磨でき、かつ表面欠陥が生じにくい研磨液について検討が行われてきた(例えば、特許文献1)。また、最近では、一定時間に目的とする表面品質の基板を得るために2段階以上の研磨工程を用いた検討がなされている。   Therefore, conventionally, a polishing liquid that can polish the surface of the hard disk substrate more smoothly and hardly causes surface defects during polishing has been studied (for example, Patent Document 1). Recently, in order to obtain a substrate having a desired surface quality for a certain period of time, studies using two or more stages of polishing processes have been made.

しかしながら、1段階目の研磨工程で得られたハードディスク用基板に、その工程で使用した砥粒や研磨カスが残留していると、それらの大部分は2段階目の研磨工程において除去されるが、取りきれずに残留してしまったものは欠陥となってしまう。また、2段階目の研磨工程で除去されるとはいえ、1段階目の残留砥粒や研磨カスは、2段階目の研磨工程に悪影響をおよぼし、スクラッチやピットの誘発をし、好ましくない。また、1段階のみで行う研磨や最終仕上げ工程で行う研磨においては、なおさらである。   However, if the abrasive grains and polishing residue used in the hard disk substrate obtained in the first stage polishing process remain, most of them are removed in the second stage polishing process. Anything left unremoved becomes a defect. Further, although it is removed in the second stage polishing process, the residual abrasive grains and polishing residue in the first stage adversely affect the second stage polishing process and cause scratches and pits, which is not preferable. This is especially true in polishing performed in only one stage or polishing performed in the final finishing process.

これらの問題点を解決するには、各段階で行われる研磨工程終了時において砥粒や研磨カスが基板上から除去されていることが重要であるが、かかる基板の表面汚れが少ない研磨液組成物についての検討はほとんど行われておらず、かかる課題を十分に解決したものはいまだ知られていなかった。   In order to solve these problems, it is important that abrasive grains and polishing debris are removed from the substrate at the end of the polishing process performed in each stage, but the polishing composition with less surface contamination of the substrate There has been almost no examination of things, and no one has yet been known that sufficiently solves this problem.

特開2002−164307号公報JP 2002-164307 A

本発明の目的は、研磨で生じる砥粒や研磨カスの研磨終了後の研磨基板上における残留が少なく、且つ、高い研磨速度を持ち、基板の平滑性も保つことができる研磨液組成物、及び該研磨液組成物を用いる基板の製造方法を提供することにある。   An object of the present invention is to provide a polishing composition that has little residue on a polishing substrate after polishing of abrasive grains and polishing residue generated in polishing, has a high polishing rate, and can maintain the smoothness of the substrate, and It is providing the manufacturing method of the board | substrate using this polishing liquid composition.

即ち、本発明の要旨は、
〔1〕 アミノ基及び/又はイミノ基を分子内に2つ以上有する有機窒素化合物、有機多塩基酸、研磨材、及び水を含有してなる研磨液組成物を基板に供給し、研磨パッドを用い基板を研磨する工程を有する、ハードディスク用基板の製造方法、
〔2〕 有機窒素化合物が、ポリアルキレンイミン類、ジエチレントリアミン、トリエチレンテトラミン、テトラエチレンペンタミン、ビス(3−アミノプロピル)アミン、及び1,3−プロパンジアミンからなる群より選ばれる、前記〔1〕記載の製造方法、
〔3〕 前記ポリアルキレンイミン類の分子量が150〜2000である、前記〔2〕記載の製造方法、
〔4〕 有機多塩基酸が、コハク酸、クエン酸、リンゴ酸、酒石酸、ヒドロキシエチリデン-1,1- ジホスホン酸、及びエチレンジアミンテトラメチレンホスホン酸からなる群より選ばれる、前記〔1〕〜〔3〕いずれか記載の製造方法、
〔5〕 前記有機窒素化合物の含有量が0.001〜0.5重量%である、前記〔1〕〜〔4〕いずれか記載の製造方法、
〔6〕 前記多塩基酸の含有量が0.002〜20重量%である、前記〔1〕〜〔5〕いずれか記載の製造方法、
〔7〕 前記有機窒素化合物と前記有機多塩基酸との含有量の重量比(有機窒素化合物/有機多塩基酸)が1/10000〜1/1である、前記〔1〕〜〔6〕いずれか記載の製造方法、
〔8〕 前記研磨材の含有量が0.05〜40重量%である、前記〔1〕〜〔7〕いずれか記載の製造方法、
〔9〕 pHが1〜7である、前記〔1〕〜〔8〕いずれか記載の製造方法、
〔10〕 研磨圧力が2〜30kPaである、前記〔1〕〜〔9〕いずれか記載の製造方法、
〔11〕 前記研磨液組成物を被研磨基板1cm当たり、0.01〜0.5mL/分で基板に供給する、前記〔1〕〜〔10〕いずれか記載の製造方法
に関する。
That is, the gist of the present invention is as follows.
[1] A polishing composition comprising an organic nitrogen compound having two or more amino groups and / or imino groups in the molecule, an organic polybasic acid, an abrasive, and water is supplied to a substrate, and a polishing pad is prepared. A method for producing a substrate for a hard disk, comprising a step of polishing the substrate used;
[2] The organic nitrogen compound is selected from the group consisting of polyalkyleneimines, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, bis (3-aminopropyl) amine, and 1,3-propanediamine. The production method according to the above,
[3] The production method according to [2], wherein the polyalkyleneimines have a molecular weight of 150 to 2000.
[4] The above [1] to [3], wherein the organic polybasic acid is selected from the group consisting of succinic acid, citric acid, malic acid, tartaric acid, hydroxyethylidene-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid. Any one of the production methods,
[5] The method according to any one of [1] to [4], wherein the content of the organic nitrogen compound is 0.001 to 0.5% by weight,
[6] The production method according to any one of [1] to [5], wherein the content of the polybasic acid is 0.002 to 20% by weight,
[7] Any of [1] to [6] above, wherein the weight ratio of the organic nitrogen compound to the organic polybasic acid (organic nitrogen compound / organic polybasic acid) is 1/10000 to 1/1. Or manufacturing method according to
[8] The production method according to any one of [1] to [7], wherein the content of the abrasive is 0.05 to 40% by weight,
[9] The method according to any one of [1] to [8], wherein the pH is 1 to 7,
[10] The production method according to any one of [1] to [9], wherein the polishing pressure is 2 to 30 kPa,
[11] The method according to any one of [1] to [10], wherein the polishing liquid composition is supplied to the substrate at a rate of 0.01 to 0.5 mL / min per 1 cm 2 of the substrate to be polished.

本発明の研磨液組成物を用いることにより、表面欠陥(表面汚れ)が少なく、表面平滑性に優れた基板を効率的に製造することができるという効果が奏される。   By using the polishing composition of the present invention, there is an effect that a substrate having few surface defects (surface contamination) and excellent surface smoothness can be efficiently produced.

本発明の研磨液組成物は、前記のように、アミノ基及び/又はイミノ基を分子内に2つ以上有する有機窒素化合物、有機多塩基酸、研磨材、及び水を含有してなる点に特徴があり、かかる特徴を有することで、表面欠陥(表面汚れ)が少なく、表面平滑性に優れた基板を効率的に製造することができるという効果が奏される。   As described above, the polishing liquid composition of the present invention contains an organic nitrogen compound having two or more amino groups and / or imino groups in the molecule, an organic polybasic acid, an abrasive, and water. There are characteristics, and by having such characteristics, there is an effect that it is possible to efficiently manufacture a substrate with few surface defects (surface contamination) and excellent surface smoothness.

なお、本発明の研磨液組成物の砥粒や研磨カスの残留を防止する作用機構については、未だ不明であるが、以下に説明するように特定の有機窒素化合物と有機多塩基酸とを併用することの相乗効果によるものと考えられる。
即ち、研磨速度向上のために使用される有機多塩基酸により、砥粒や研磨カスが基板に残留しやすくなるのを、有機窒素化合物が砥粒や研磨カスに吸着することによって、研磨基板への付着と残留を防止しているものと推測する。
In addition, although it is still unclear about the action mechanism for preventing the abrasive grains and polishing residue of the polishing composition of the present invention from remaining, a specific organic nitrogen compound and an organic polybasic acid are used in combination as described below. It is thought to be due to the synergistic effect of doing.
That is, the organic polybasic acid used for improving the polishing rate makes it easy for the abrasive grains and polishing residue to remain on the substrate, and the organic nitrogen compound adsorbs to the polishing particles and polishing residue to the polishing substrate. Presumed to prevent adhesion and residue of

本発明に用いられる有機窒素化合物とは、その分子内にアミノ基及び/又はイミノ基を合計2つ以上有する化合物を言う。分子内のアミノ基及びイミノ基の数としては、特に限定はないが、研磨速度及び基板汚れ防止の観点から、2〜2000が好ましく、2〜1000がより好ましく、2〜50が更に好ましい。具体的には、ポリアルキレンイミン類、ジエチレントリアミン、トリエチレンテトラミン、テトラエチレンペンタミン、ビス(3−アミノプロピル)アミン、1,3−プロパンジアミン等が挙げられる。   The organic nitrogen compound used in the present invention refers to a compound having two or more amino groups and / or imino groups in the molecule. The number of amino groups and imino groups in the molecule is not particularly limited, but is preferably 2 to 2000, more preferably 2 to 1000, and still more preferably 2 to 50, from the viewpoint of polishing rate and prevention of substrate contamination. Specific examples include polyalkyleneimines, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, bis (3-aminopropyl) amine, 1,3-propanediamine and the like.

ポリアルキレンイミン類とは、代表的には、ポリエチレンイミン、ポリプロピレンイミン、ポリブタジエンイミン等が挙げられ、直鎖状、分岐したもの、シクロ構造のものが挙げられる。これらの中でも、研磨速度及び汚れ防止の観点から、ポリエチレンイミンが好ましい。その分子量としては、研磨速度、表面汚れ低減の観点から、150〜100000が好ましく、200〜30000がより好ましく、200〜10000がさらに好ましく、300〜2000が特に好ましい。   The polyalkyleneimines typically include polyethyleneimine, polypropyleneimine, polybutadieneimine, and the like, and examples include linear, branched, and cyclostructured ones. Among these, polyethyleneimine is preferable from the viewpoint of polishing rate and prevention of contamination. The molecular weight is preferably from 150 to 100,000, more preferably from 200 to 30,000, still more preferably from 200 to 10,000, and particularly preferably from 300 to 2,000 from the viewpoint of polishing rate and reduction of surface contamination.

また、有機窒素化合物の研磨液組成物中の含有量としては、研磨速度及び基板の汚れ防止の観点から、0.001〜0.5重量%が好ましく、0.001〜0.3重量%がより好ましく、0.001〜0.1重量%がさらに好ましい。   In addition, the content of the organic nitrogen compound in the polishing composition is preferably 0.001 to 0.5% by weight, and 0.001 to 0.3% by weight from the viewpoint of polishing rate and prevention of contamination of the substrate. More preferred is 0.001 to 0.1% by weight.

本発明に用いられる有機多塩基酸としては、含硫黄有機酸、カルボン酸、及び含リン有機酸が好ましい。その具体例としては、メタンジスルホン酸、エタンジスルホン酸、フェノールジスルホン酸、ナフタレンジスルホン酸等の有機ホスホン酸、シュウ酸、コハク酸、グルタル酸、アジピン酸、マレイン酸、フマル酸、イタコン酸、リンゴ酸、酒石酸、クエン酸、イソクエン酸、フタル酸、ニトロトリ酢酸、エチレンジアミンテトラ酢酸等の多価カルボン酸、ヒドロキシエチリデン-1,1- ジホスホン酸、ホスホノブタントリカルボン酸、エチレンジアミンテトラメチレンホスホン酸等の含リン有機酸等が挙げられる。これらの中でも研磨速度の向上、うねり低減、ロールオフ低減の観点からコハク酸、クエン酸、リンゴ酸、酒石酸、ヒドロキシエチリデン-1,1- ジホスホン酸、エチレンジアミンテトラメチレンホスホン酸が好ましく、クエン酸、リンゴ酸、酒石酸がさらに好ましく、クエン酸が特に好ましい。これらの化合物は単独で用いても良いし、混合して用いても良い。   As the organic polybasic acid used in the present invention, a sulfur-containing organic acid, a carboxylic acid, and a phosphorus-containing organic acid are preferable. Specific examples thereof include organic phosphonic acids such as methanedisulfonic acid, ethanedisulfonic acid, phenoldisulfonic acid, naphthalenedisulfonic acid, oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, itaconic acid, malic acid. Polycarboxylic acids such as tartaric acid, citric acid, isocitric acid, phthalic acid, nitrotriacetic acid, ethylenediaminetetraacetic acid, phosphorus-containing compounds such as hydroxyethylidene-1,1-diphosphonic acid, phosphonobutanetricarboxylic acid, ethylenediaminetetramethylenephosphonic acid An organic acid etc. are mentioned. Of these, succinic acid, citric acid, malic acid, tartaric acid, hydroxyethylidene-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid are preferred from the viewpoint of improving the polishing rate, reducing waviness, and reducing roll-off. Acid and tartaric acid are more preferable, and citric acid is particularly preferable. These compounds may be used alone or in combination.

有機多塩基酸の含有量は、研磨速度の向上及びうねり低減の観点から、研磨液組成物中において好ましくは0.002重量%以上、より好ましくは0.005重量%以上、さらに好ましくは0.007重量%以上、さらに好ましくは0.01重量%以上である。また、表面品質及び経済性の観点から、好ましくは20重量%以下、より好ましくは15重量%以下、さらに好ましくは10重量%以下、さらに好ましくは5重量%以下である。即ち、研磨液組成物中の有機多塩基酸の含有量は好ましくは0.002〜20重量%、より好ましくは0.005〜15重量%、さらに好ましくは0.007〜10重量%、さらに好ましくは0.01〜5重量%である。   The content of the organic polybasic acid is preferably 0.002% by weight or more, more preferably 0.005% by weight or more, more preferably 0.007% by weight or more, and more preferably 0.007% by weight or more in the polishing composition from the viewpoint of improving the polishing rate and reducing waviness. Preferably it is 0.01 weight% or more. From the viewpoint of surface quality and economy, it is preferably 20% by weight or less, more preferably 15% by weight or less, still more preferably 10% by weight or less, and further preferably 5% by weight or less. That is, the content of the organic polybasic acid in the polishing composition is preferably 0.002 to 20% by weight, more preferably 0.005 to 15% by weight, still more preferably 0.007 to 10% by weight, and still more preferably 0.01 to 5% by weight. It is.

また、本発明の研磨液組成物においては、前記有機窒素化合物と有機多塩基酸との含有量の重量比(有機窒素化合物/有機多塩基酸)は、研磨速度及び基板汚れ防止の観点から、1/10000〜1/1が好ましく、1/1000〜1/2がより好ましく、1/500〜1/5が更に好ましい。   In the polishing composition of the present invention, the weight ratio of the content of the organic nitrogen compound and the organic polybasic acid (organic nitrogen compound / organic polybasic acid) is determined from the viewpoint of polishing rate and prevention of substrate contamination. 1/10000 to 1/1 is preferable, 1/1000 to 1/2 is more preferable, and 1/500 to 1/5 is still more preferable.

本発明に用いられる研磨材は、研磨用に一般的に使用されている研磨材を使用することができる。該研磨材の例としては、金属;金属又は半金属の炭化物、窒化物、酸化物、ホウ化物;ダイヤモンド等が挙げられる。金属又は半金属元素は、周期律表(長周期型)の2A、2B、3A、3B、4A、4B、5A、6A、7A又は8族由来のものである。研磨材の具体例として、α−アルミナ粒子、中間アルミナ粒子等の酸化アルミニウム粒子、炭化ケイ素粒子、ダイヤモンド粒子、酸化マグネシウム粒子、酸化亜鉛粒子、酸化セリウム粒子、酸化チタン粒子、酸化ジルコニウム粒子、コロイダルシリカ粒子、ヒュームドシリカ粒子等が挙げられる。中でも、α−アルミナ粒子、中間アルミナ粒子、酸化セリウム粒子、酸化ジルコニウム粒子、コロイダルシリカ粒子、ヒュームドシリカ粒子等がさらに好ましく、α−アルミナ粒子、中間アルミナ粒子、コロイダルシリカ粒子、ヒュームドシリカ粒子が特に好ましく、α−アルミナ粒子、中間アルミナ粒子が最も好ましい。さらに、α―アルミナと中間アルミナを併用することによって一層の研磨速度とうねり低減の効果が得られる。   As the abrasive used in the present invention, an abrasive generally used for polishing can be used. Examples of the abrasive include metals; metal or metalloid carbides, nitrides, oxides, borides; diamond and the like. The metal or metalloid element is derived from Group 2A, 2B, 3A, 3B, 4A, 4B, 5A, 6A, 7A or Group 8 of the periodic table (long period type). Specific examples of abrasives include aluminum oxide particles such as α-alumina particles and intermediate alumina particles, silicon carbide particles, diamond particles, magnesium oxide particles, zinc oxide particles, cerium oxide particles, titanium oxide particles, zirconium oxide particles, colloidal silica. Examples thereof include particles and fumed silica particles. Among these, α-alumina particles, intermediate alumina particles, cerium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like are more preferable, and α-alumina particles, intermediate alumina particles, colloidal silica particles, fumed silica particles are more preferable. Particularly preferred are α-alumina particles and intermediate alumina particles. Furthermore, by using α-alumina and intermediate alumina in combination, a further polishing rate and waviness reduction effect can be obtained.

前記α―アルミナ及び中間アルミナの中でも、うねり低減、表面粗さ低減、研磨速度向上及び表面欠陥防止の観点から、アルミナとしての純度が95%以上のアルミナが好ましく、より好ましくは97%以上、さらに好ましくは99%以上のアルミナである。また、研磨速度の観点からは、α−アルミナが好ましく、表面性状及びうねり低減の観点からは、γ−アルミナ、δ−アルミナ、θ―アルミナ、η−アルミナ、κ−アルミナ等の中間アルミナが好ましい。なお、本発明に用いられる中間アルミナとは、α−アルミナ粒子以外のアルミナ粒子の総称であり、具体的にはγ−アルミナ、δ−アルミナ、θ−アルミナ、η−アルミナ、κ−アルミナ、これらの混合物等が挙げられる。その中間アルミナの中でも、研磨速度向上及びうねり低減の観点から、γ−アルミナ、δ−アルミナ、θ−アルミナ及びこれらの混合物が好ましく、特に好ましくはγ−アルミナ及びθ−アルミナである。
特に、中間アルミナの場合、BET 法で測定された比表面積としては、好ましくは30〜300m2/g、より好ましくは50〜200m2/gである。
Among the α-alumina and the intermediate alumina, from the viewpoint of reducing waviness, reducing the surface roughness, improving the polishing rate and preventing surface defects, alumina having a purity of 95% or more is preferable, more preferably 97% or more, 99% or more of alumina is preferred. Further, α-alumina is preferable from the viewpoint of polishing rate, and intermediate alumina such as γ-alumina, δ-alumina, θ-alumina, η-alumina, and κ-alumina is preferable from the viewpoint of surface properties and waviness reduction. . The intermediate alumina used in the present invention is a general term for alumina particles other than α-alumina particles. Specifically, γ-alumina, δ-alumina, θ-alumina, η-alumina, κ-alumina, these And the like. Among the intermediate aluminas, γ-alumina, δ-alumina, θ-alumina and a mixture thereof are preferable from the viewpoint of improving the polishing rate and reducing waviness, and γ-alumina and θ-alumina are particularly preferable.
In particular, in the case of intermediate alumina, the specific surface area measured by the BET method is preferably 30 to 300 m 2 / g, more preferably 50 to 200 m 2 / g.

前記研磨材の一次粒子の平均粒径は、研磨速度向上とうねり低減の観点から、好ましくは0.001〜2μm、より好ましくは0.005〜0.8μm、さらに好ましくは0.01〜0.5μmである。さらに、一次粒子が凝集して二次粒子を形成している場合は、研磨速度向上とうねり低減、表面欠陥を発生させない観点から、その二次粒子の平均粒径は、好ましくは0.02〜3μm、より好ましくは0.05〜1μm、さらに好ましくは0.1〜0.8μmである。研磨材の一次粒子の平均粒径は、走査型電子顕微鏡で観察(好適には3000〜30000倍)又は透過型電子顕微鏡で観察(好適には10000〜500000倍)して画像解析を行い、粒径を測定することにより求めることができる。また、二次粒子の平均粒径はレーザー光回折法を用いて体積平均粒径として測定することができる。   The average particle size of the primary particles of the abrasive is preferably 0.001 to 2 μm, more preferably 0.005 to 0.8 μm, and still more preferably 0.01 to 0.5 μm, from the viewpoint of improving the polishing rate and reducing waviness. Furthermore, when primary particles are aggregated to form secondary particles, the average particle size of the secondary particles is preferably 0.02 to 3 μm, from the viewpoint of improving polishing rate and reducing waviness and not generating surface defects. More preferably, it is 0.05-1 micrometer, More preferably, it is 0.1-0.8 micrometer. The average particle size of the primary particles of the abrasive is observed with a scanning electron microscope (preferably 3000 to 30000 times) or observed with a transmission electron microscope (preferably 10,000 to 500000 times), and image analysis is performed. It can be determined by measuring the diameter. The average particle size of the secondary particles can be measured as a volume average particle size using a laser beam diffraction method.

研磨材の比重は、分散性及び研磨装置への供給性や回収再利用性の観点から、その比重は1.5〜8であることが好ましく、1.5〜5であることがより好ましい。   The specific gravity of the abrasive is preferably 1.5 to 8, and more preferably 1.5 to 5, from the viewpoints of dispersibility, supply to a polishing apparatus and recovery and reusability.

研磨材の含有量は、経済性及び研磨速度向上の観点から、研磨液組成物中において好ましくは0.05〜40重量%、より好ましくは0.1〜30重量%、さらに好ましくは0.5〜25重量%、さらに好ましくは1〜20重量%である。   The content of the abrasive is preferably 0.05 to 40% by weight, more preferably 0.1 to 30% by weight, and still more preferably 0.5% in the polishing composition from the viewpoints of economy and improvement in polishing rate. -25% by weight, more preferably 1-20% by weight.

本発明の研磨液組成物中の水は、媒体として使用されるものであり、その含有量は被研磨物を効率良く研磨する観点から、好ましくは55〜99重量%、より好ましくは60〜97重量%、さらに好ましくは70〜95重量%である。   The water in the polishing composition of the present invention is used as a medium, and the content thereof is preferably 55 to 99% by weight, more preferably 60 to 97, from the viewpoint of efficiently polishing an object to be polished. % By weight, more preferably 70 to 95% by weight.

また、本発明の研磨液剤組成物には、必要に応じて他の成分を配合することができる。   Moreover, other components can be mix | blended with the polishing liquid composition of this invention as needed.

本発明の研磨液組成物には更なる研磨速度向上及びうねり低減の観点から無機酸を併用することが好ましい。研磨速度向上の観点から、好ましくは硝酸、亜硝酸、硫酸、亜硫酸及びアミド硫酸であり、より好ましくは硫酸、亜硫酸及びアミド硫酸、さらに好ましくは硫酸である。研磨液組成物中の無機酸の含有量は、研磨速度、表面品質及び経済性の観点から、好ましくは0.002〜20重量%、より好ましくは0.005〜15重量%、さらに好ましくは0.007〜10重量%、さらに好ましくは0.01〜5重量%である。   It is preferable to use an inorganic acid in combination with the polishing composition of the present invention from the viewpoint of further improving the polishing rate and reducing waviness. From the viewpoint of improving the polishing rate, nitric acid, nitrous acid, sulfuric acid, sulfurous acid and amidosulfuric acid are preferred, sulfuric acid, sulfurous acid and amidosulfuric acid are more preferred, and sulfuric acid is more preferred. The content of the inorganic acid in the polishing composition is preferably 0.002 to 20% by weight, more preferably 0.005 to 15% by weight, and still more preferably 0.007 to 10% by weight from the viewpoints of polishing rate, surface quality and economy. More preferably, it is 0.01 to 5% by weight.

また、本発明の研磨液組成物は、研磨速度の向上の観点から、酸化剤を含有することが好ましい。酸化剤は無機系酸化剤と有機系酸化剤に大別される。無機系酸化剤としては、過酸化水素、アルカリ金属又はアルカリ土類金属の過酸化物類、ペルオキソ硫酸又はその塩類、ペルオキソ硝酸又はその塩類、ペルオキソリン酸又はその塩類、ペルオキソホウ酸塩類、ペルオキソクロム酸塩類、過マンガン酸塩類、ハロゲン酸又はその誘導体類、無機酸金属塩等を用いることができる。有機系酸化剤としては、過カルボン酸類、パーオキサイド類、クエン酸鉄(III)等を用いることができる。これらの内、研磨速度向上性や入手
性、水溶性等の取り扱い性を比較した場合、無機系酸化剤の方が好ましく、中でも環境問題の点を考慮すると重金属を含まない無機過酸化物が好ましい。また、被研磨基板の表面汚れ防止の観点からは、より好ましくは過酸化水素、ペルオキソ硫酸塩類、ハロゲン酸又はその誘導体であり、さらに好ましくは過酸化水素である。また、これらの酸化剤は1種でもよいが、2種以上を混合して用いても良い。
Moreover, it is preferable that the polishing liquid composition of this invention contains an oxidizing agent from a viewpoint of the improvement of polishing rate. The oxidizing agent is roughly classified into an inorganic oxidizing agent and an organic oxidizing agent. Inorganic oxidants include hydrogen peroxide, alkali metal or alkaline earth metal peroxides, peroxosulfuric acid or salts thereof, peroxonitric acid or salts thereof, peroxophosphoric acid or salts thereof, peroxoborate salts, peroxochrome. Acid salts, permanganates, halogen acids or derivatives thereof, inorganic acid metal salts, and the like can be used. As the organic oxidizing agent, percarboxylic acids, peroxides, iron (III) citrate and the like can be used. Among these, when comparing handling properties such as polishing rate improvement, availability, and water solubility, an inorganic oxidizer is preferable, and an inorganic peroxide containing no heavy metal is preferable in consideration of environmental issues. . Further, from the viewpoint of preventing surface contamination of the substrate to be polished, hydrogen peroxide, peroxosulfates, halogen acids or derivatives thereof are more preferable, and hydrogen peroxide is more preferable. These oxidizing agents may be used alone or in combination of two or more.

酸化剤の含有量は、研磨速度の向上、うねり低減、表面品質、及び経済性の観点から、研磨液組成物中において、好ましくは0.002〜20重量%、より好ましくは0.005〜15重量%、さらに好ましくは0.007〜10重量%、特に好ましくは0.01〜5重量%である。   The content of the oxidizing agent is preferably 0.002 to 20% by weight, more preferably 0.005 to 15% by weight, and more preferably 0.005 to 15% by weight in the polishing composition from the viewpoints of improvement in polishing rate, reduction of waviness, surface quality, and economy. Preferably it is 0.007-10 weight%, Most preferably, it is 0.01-5 weight%.

また、その他の成分としては、セルロース類、たとえばセルロース、カルボキシメチルセルロース、ヒドロキシエチルセルロース等が、また水溶性アルコール類たとえばエタノール、プロパノール、エチレングリコール等が挙げられ、また、界面活性剤、たとえばアルキルベンセンスルホン酸塩、ナフタレンスルホン酸のホルマリン縮合物、ポリアクリル酸塩、リグニンスルホン酸塩等が挙げられ、またポリビニルアルコール等の水溶性高分子等が挙げられる。これらの成分は単独で用いても良いし、2種以上を混合して用いても良い。また、その含有量は、それぞれの機能を発現させる観点及び経済性の観点から、好ましくは研磨液組成物中0.001〜20重量%、より好ましくは0.01〜5重量%、さらに好ましくは0.01〜2重量%である。   Examples of other components include celluloses such as cellulose, carboxymethyl cellulose, and hydroxyethyl cellulose; water-soluble alcohols such as ethanol, propanol, and ethylene glycol; and surfactants such as alkyl benzene sulfonic acid. Examples thereof include salts, formalin condensates of naphthalenesulfonic acid, polyacrylates, lignin sulfonates, and the like, and water-soluble polymers such as polyvinyl alcohol. These components may be used alone or in combination of two or more. In addition, the content is preferably 0.001 to 20% by weight, more preferably 0.01 to 5% by weight, and still more preferably, in the polishing liquid composition, from the viewpoint of developing each function and from the viewpoint of economy. 0.01 to 2% by weight.

尚、研磨液組成物の前記各成分の濃度は、研磨する際の好ましい濃度であるが、該組成物製造時の濃度は、これらの濃度より高濃度であってもよい。通常、濃縮液として組成物は製造され、これを使用時に希釈して用いる場合が多い。   In addition, although the density | concentration of each said component of polishing liquid composition is a density | concentration preferable at the time of grinding | polishing, the density | concentration at the time of this composition manufacture may be higher than these density | concentrations. Usually, the composition is produced as a concentrated liquid, and it is often used after being diluted at the time of use.

本発明の研磨液組成物は、被研磨基板としてハードディスク用基板の研磨に好適に用いられる。ハードディスク用基板としては、通常公知のものであれば特に限定はなく、例えば、Ni−Pメッキされたアルミニウム合金基板、Ni−Pメッキされたガラス基板、アルミニウムディスク等の表面層に金属層を有する基板、カーボンディスク、ガラス基板等のガラス状の物質又はセラミック材料を有する基板、またそれらが複合された基板等を挙げることができる。その中でも、Ni−Pメッキされたアルミニウム合金基板、Ni−Pメッキされたガラス基板、アルミニウムディスク等の表面層に金属層を有する基板に本発明の研磨液組成物を用いた場合、砥粒や研磨カスが特に低減できるので好ましい。   The polishing composition of the present invention is suitably used for polishing a hard disk substrate as a substrate to be polished. The hard disk substrate is not particularly limited as long as it is a generally known substrate. For example, a Ni-P plated aluminum alloy substrate, a Ni-P plated glass substrate, and a metal layer on the surface layer of an aluminum disk or the like. Examples thereof include a substrate, a substrate having a glassy substance such as a carbon disk and a glass substrate, or a ceramic material, and a substrate in which they are combined. Among them, when the polishing composition of the present invention is used for a substrate having a metal layer on a surface layer such as a Ni-P plated aluminum alloy substrate, a Ni-P plated glass substrate, an aluminum disk, etc., abrasive grains and This is preferable because the polishing residue can be particularly reduced.

研磨液組成物のpHは、研磨を施す基板の種類に応じて適宜決定することが好ましい。例えば、基板のリンス性及び加工機械の腐食防止性、作業者の安全性の観点から、1〜12が好ましい。また被リンス基板がNi-Pメッキされたアルミニウム合金基板、Ni−Pメッキされたガラス基板、アルミニウムディスク等の表面層に金属層を有する基板を主対象とした場合、研磨速度の向上の観点からは、pHは1〜7が好ましく、より好ましくは1〜5、更に好ましくは1〜4、更に好ましくは2〜4、更に好ましくは2以上3未満である。該pHは、必要により、無機酸、有機酸、及びそれらの塩、又はアンモニア、水酸化
ナトリウム、水酸化カリウム、アミン等の塩基性物質を適宜配合することで調整することができる。
The pH of the polishing composition is preferably appropriately determined according to the type of substrate to be polished. For example, 1 to 12 is preferable from the viewpoint of the rinse property of the substrate, the corrosion prevention property of the processing machine, and the safety of the operator. In addition, when the substrate to be rinsed is mainly an aluminum alloy substrate plated with Ni-P, a glass substrate plated with Ni-P, or a substrate having a metal layer on a surface layer such as an aluminum disk, from the viewpoint of improving the polishing rate. The pH is preferably 1-7, more preferably 1-5, still more preferably 1-4, still more preferably 2-4, still more preferably 2 or more and less than 3. The pH can be adjusted by appropriately blending an inorganic acid, an organic acid, and a salt thereof, or a basic substance such as ammonia, sodium hydroxide, potassium hydroxide, or an amine as necessary.

本発明において研磨液組成物の砥粒や研磨カスの残留防止効果は、例えば、研磨後に得られる基板表面の顕微鏡観察、走査型電子顕微鏡観察等により評価することができ、特に、ハードディスク用基板においては、洗浄しにくい内径エッジ部分のそれら機器での観察によって評価することができる。また、さらに研磨基板表面をグロー放電分光分析(GDOES)等で評価することもできる。   In the present invention, the residual prevention effect of abrasive grains and polishing residue of the polishing liquid composition can be evaluated by, for example, microscopic observation of a substrate surface obtained after polishing, observation by a scanning electron microscope, etc. Can be evaluated by observing the inner edge portion which is difficult to clean with these instruments. Further, the polishing substrate surface can be evaluated by glow discharge spectroscopic analysis (GDOES) or the like.

かかる構成を有する本発明の研磨液組成物は、ハードディスク用基板等の基板の製造方法において、研磨する工程に使用することにより、研磨で生じる砥粒や研磨カスの基板上における残留を防止することによって基板表面に表面欠陥(スクラッチ、ピット)がなく、砥粒や研磨カスのない基板を製造することができる。したがって、本発明は、基板の製造方法に関する。   The polishing liquid composition of the present invention having such a configuration can be used in a polishing process in a method for manufacturing a substrate such as a hard disk substrate, thereby preventing abrasive grains and polishing residue generated on the substrate from remaining on the substrate. As a result, it is possible to manufacture a substrate having no surface defects (scratches, pits) on the substrate surface and no abrasive grains or polishing residue. Accordingly, the present invention relates to a method for manufacturing a substrate.

本発明の基板の製造方法は、前記研磨液組成物を用いて被研磨基板を研磨する工程を有する。この工程においては、例えば、多孔質の有機高分子系の研磨布(研磨パッド)等を貼り付けた研磨定盤で基板を挟み込み、本発明の研磨液組成物を研磨面に供給し、圧力を加えながら研磨定盤や基板を動かすことにより、被研磨基板を研磨することができる。したがって、本発明は、前記研磨液組成物を用いて、基板を研磨する方法にも関する。   The manufacturing method of the board | substrate of this invention has the process of grind | polishing a to-be-polished board | substrate using the said polishing liquid composition. In this step, for example, the substrate is sandwiched with a polishing surface plate to which a porous organic polymer polishing cloth (polishing pad) or the like is attached, the polishing composition of the present invention is supplied to the polishing surface, and the pressure is applied. The substrate to be polished can be polished by moving the polishing platen and the substrate while adding. Therefore, this invention relates also to the method of grind | polishing a board | substrate using the said polishing liquid composition.

本発明の基板の製造方法においては、研磨速度向上及び経済的な観点から、被研磨基板1cm当たり、好ましくは0.01〜0.5mL/分、より好ましくは0.02〜0.3mL/分、更に好ましくは0.03〜0.2mL/分で、研磨液組成物を基板に供給し、研磨パッドを用いて研磨する工程を有することが好ましい。 In the substrate manufacturing method of the present invention, from the viewpoint of improving the polishing rate and economically, it is preferably 0.01 to 0.5 mL / min, more preferably 0.02 to 0.3 mL / min per 1 cm 2 of the substrate to be polished. It is preferable to have a step of supplying the polishing composition to the substrate and polishing with a polishing pad at a rate of 0.03 to 0.2 mL / min.

また、本発明の基板の製造方法においては、基板と研磨パッドの間に供給された研磨液組成物を研磨する際の研磨圧力を、研磨速度向上及びうねり低減の観点から、2〜30kPa、好ましくは2〜20kPa、より好ましくは4〜15kPaに調整することが望ましい。   In the method for producing a substrate of the present invention, the polishing pressure when polishing the polishing composition supplied between the substrate and the polishing pad is preferably 2 to 30 kPa, preferably from the viewpoint of improving the polishing rate and reducing waviness. Is preferably adjusted to 2 to 20 kPa, more preferably 4 to 15 kPa.

また、研磨を行なう際の他の条件(研磨機の種類、研磨パッドの種類、研磨温度、研磨速度等)については特に限定はない。   There are no particular limitations on other conditions (type of polishing machine, type of polishing pad, polishing temperature, polishing rate, etc.) when polishing.

本発明の研磨液組成物は、ポリッシング工程において特に効果があるが、これ以外の研磨工程、例えば、ラッピング工程等にも同様に適用することができる。   The polishing composition of the present invention is particularly effective in the polishing process, but can be similarly applied to other polishing processes such as a lapping process.

実施例1〜13、比較例1〜5
表1に示すα−アルミナ(一次粒子の平均粒径0.07μm、二次粒子の平均粒径0.3μm、比表面積15m2/g、純度99.9%)、θ−アルミナ(二次粒子の平均粒径0.2μm、比表面積120m2/g、純度99.9%)、有機多塩基酸、有機窒素化合物及びその他の添加物を所定量、残分をイオン交換水として攪拌混合して研磨液組成物を得た。
Examples 1-13, Comparative Examples 1-5
Α-alumina shown in Table 1 (average primary particle size 0.07 μm, secondary particle average particle size 0.3 μm, specific surface area 15 m 2 / g, purity 99.9%), θ-alumina (secondary particle average particle size) 0.2 μm, specific surface area 120 m 2 / g, purity 99.9%), a predetermined amount of organic polybasic acid, organic nitrogen compound and other additives, and the remainder is stirred and mixed with ion-exchanged water to obtain a polishing composition. It was.

1.研磨方法
厚さ1.27mm、直径3.5インチのNi-Pメッキされたアルミニウム合金からなる基板(「ZygoNewView5032」で短波長うねり3.8nm、長波長うねり1.6nm)の表面を両面加工機により、以下の両面加工機の設定条件で上記研磨液組成物を用いポリッシングし、磁気記録媒体用基板として用いられるNi-Pメッキされたアルミニウム合金基板の研磨物を得た。
両面加工機の設定条件を下記に示す。
1. Polishing method The surface of a substrate made of Ni-P plated aluminum alloy with a thickness of 1.27mm and a diameter of 3.5 inches ("ZygoNewView5032", short wavelength undulation 3.8nm, long wavelength undulation 1.6nm) is processed by the double-sided processing machine as follows. Polishing was performed using the above polishing composition under the setting conditions of the processing machine to obtain a polished product of a Ni—P plated aluminum alloy substrate used as a substrate for a magnetic recording medium.
The setting conditions for the double-sided machine are shown below.

<両面加工機の設定条件>
両面加工機:スピードファーム(株)製、9B型両面加工機
加工圧力 :9.8kPa
研磨パッド:フジボウ製 ハードディスク基板用研磨パッド
定盤回転数:50r/min
研磨液組成物供給流量:100mL/min(被研磨基板1cm当たり、0.076mL/min)
研磨時間:4min
投入した基板の枚数:10枚
<Setting conditions of double-sided machine>
Double-sided processing machine: 9B type double-sided processing machine made by Speed Farm Co., Ltd. Processing pressure: 9.8kPa
Polishing pad: Fujibow Hard disk substrate polishing pad Surface plate rotation speed: 50r / min
Polishing liquid composition supply flow rate: 100 mL / min (0.076 mL / min per 1 cm 2 of substrate to be polished)
Polishing time: 4min
Number of substrates loaded: 10

2.評価方法
(1)研磨速度
研磨前後の各基板の重さを計り(Sartorius 社製「BP-210S 」)を用いて測定し、各基板の重量変化を求め、10枚の平均値を減少量とし、それを研磨時間で割った値を重量減少速度とした。重量の減少速度を下記の式に導入し、研磨速度(μm/min)に変換した。
重量減少速度(g/min)={研磨前の重量(g)−研磨後の重量(g)}/研磨時間(min)
研磨速度(μm/min)=重量減少速度(g/min)/基板片面面積(mm2)
/Ni-Pメッキ密度(g/cm3)×1000000
なお、比較例1の研磨速度を基準値1として各実施例、比較例の研磨速度の相対値(相対速度)を表1に示した。
2. Evaluation method (1) Polishing speed Each substrate before and after polishing is weighed (measured using “BP-210S” manufactured by Sartorius) to determine the weight change of each substrate, and the average value of 10 substrates is taken as the reduction amount. The value obtained by dividing the result by the polishing time was defined as the weight reduction rate. The weight reduction rate was introduced into the following equation and converted to a polishing rate (μm / min).
Weight reduction rate (g / min) = {weight before polishing (g) −weight after polishing (g)} / polishing time (min)
Polishing rate (μm / min) = Weight reduction rate (g / min) / Substrate single side area (mm 2 )
/ Ni-P plating density (g / cm 3 ) × 1000000
Table 1 shows the relative values (relative speeds) of the polishing rates of the examples and comparative examples, with the polishing rate of comparative example 1 being the reference value 1.

(2)表面汚れ
研磨後の各基板の表面を走査型電子顕微鏡((株)日立製作所製:S-4000)にて1万倍で観察し、下記の5段階評価をした。1,2は実用上の不良である。
5:表面にアルミナ残留物や研磨クズ等が全く観察されないもの
4:極わずかしか見られなかったもの
3:少し観察されたもの
2:多く観察されたもの
1:非常に多く観察されたもの
(2) Surface contamination The surface of each substrate after polishing was observed with a scanning electron microscope (manufactured by Hitachi, Ltd .: S-4000) at a magnification of 10,000, and the following five-level evaluation was performed. 1 and 2 are practical defects.
5: Alumina residue, polishing debris, etc. are not observed at all on the surface. 4: A very small amount is observed. 3: A small amount is observed. 2: A large amount is observed. 1: A very large amount is observed.

(3)うねり
研磨後の各基板のうねりについては下記の条件に従い、短波長うねりと長波長うねりの2種類について測定した。比較例1のうねりを基準値1として、各実施例、比較例のうねりの相対値を表1に示した。数値が低い方がうねりが低減されていることを示す。
機器 :Zygo NewView5032
レンズ :2.5倍 Micheison
ズーム比 :0.5
リムーブ :Cylinder
フィルター:FFT Fixed Band Pass
短波長うねり:50〜500μm
長波長うねり:0.5 〜5mm
エリア :4.33mm×5.77mm
(3) Waviness Regarding the waviness of each substrate after polishing, two types of waviness of short wavelength and long wavelength were measured according to the following conditions. Table 1 shows the relative values of the swells of the examples and comparative examples, with the swell of Comparative Example 1 as the reference value 1. A lower value indicates less waviness.
Equipment: Zygo NewView5032
Lens: 2.5x Micheison
Zoom ratio: 0.5
Remove: Cylinder
Filter: FFT Fixed Band Pass
Short wavelength swell: 50-500μm
Long wavelength swell: 0.5 to 5mm
Area: 4.33mm x 5.77mm

Figure 2009245580
Figure 2009245580

表1に示す結果より、実施例1〜13で得られた研磨液組成物は、比較例1〜5のものに比べて、研磨後の基板の表面汚れが有意に少なく、基板にうねりが生じにくいものであることがわかる。   From the results shown in Table 1, the polishing liquid compositions obtained in Examples 1 to 13 have significantly less surface contamination of the substrate after polishing than those of Comparative Examples 1 to 5, and the substrate is wavy. It turns out that it is difficult.

本発明の研磨液組成物は、例えば、メモリーハードディスク等のハードディスク用基板の製造工程に好適に用いることができる。   The polishing composition of the present invention can be suitably used, for example, in the production process of a substrate for a hard disk such as a memory hard disk.

Claims (11)

アミノ基及び/又はイミノ基を分子内に2つ以上有する有機窒素化合物、有機多塩基酸、研磨材、及び水を含有してなる研磨液組成物を基板に供給し、研磨パッドを用い基板を研磨する工程を有する、ハードディスク用基板の製造方法。   A polishing composition comprising an organic nitrogen compound having two or more amino groups and / or imino groups in the molecule, an organic polybasic acid, an abrasive, and water is supplied to the substrate, and the substrate is prepared using a polishing pad. A method for producing a hard disk substrate, comprising a polishing step. 有機窒素化合物が、ポリアルキレンイミン類、ジエチレントリアミン、トリエチレンテトラミン、テトラエチレンペンタミン、ビス(3−アミノプロピル)アミン、及び1,3−プロパンジアミンからなる群より選ばれる、請求項1記載の製造方法。 The production according to claim 1, wherein the organic nitrogen compound is selected from the group consisting of polyalkyleneimines, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, bis (3-aminopropyl) amine, and 1,3-propanediamine. Method. 前記ポリアルキレンイミン類の分子量が150〜2000である、請求項2記載の製造方法。 The manufacturing method of Claim 2 whose molecular weight of the said polyalkyleneimines is 150-2000. 有機多塩基酸が、コハク酸、クエン酸、リンゴ酸、酒石酸、ヒドロキシエチリデン-1,1- ジホスホン酸、及びエチレンジアミンテトラメチレンホスホン酸からなる群より選ばれる、請求項1〜3いずれか記載の製造方法。   The production according to any one of claims 1 to 3, wherein the organic polybasic acid is selected from the group consisting of succinic acid, citric acid, malic acid, tartaric acid, hydroxyethylidene-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid. Method. 前記有機窒素化合物の含有量が0.001〜0.5重量%である、請求項1〜4いずれか記載の製造方法。   The manufacturing method in any one of Claims 1-4 whose content of the said organic nitrogen compound is 0.001-0.5 weight%. 前記多塩基酸の含有量が0.002〜20重量%である、請求項1〜5いずれか記載の製造方法。   The manufacturing method in any one of Claims 1-5 whose content of the said polybasic acid is 0.002 to 20 weight%. 前記有機窒素化合物と前記有機多塩基酸との含有量の重量比(有機窒素化合物/有機多塩基酸)が1/10000〜1/1である、請求項1〜6いずれか記載の製造方法。   The manufacturing method in any one of Claims 1-6 whose weight ratio (organic nitrogen compound / organic polybasic acid) of content of the said organic nitrogen compound and the said organic polybasic acid is 1/10000-1/1. 前記研磨材の含有量が0.05〜40重量%である、請求項1〜7いずれか記載の製造方法。   The manufacturing method in any one of Claims 1-7 whose content of the said abrasives is 0.05 to 40 weight%. pHが1〜7である、請求項1〜8いずれか記載の製造方法。   The manufacturing method in any one of Claims 1-8 whose pH is 1-7. 研磨圧力が2〜30kPaである、請求項1〜9いずれか記載の製造方法。   The manufacturing method in any one of Claims 1-9 whose polishing pressure is 2-30 kPa. 前記研磨液組成物を被研磨基板1cm当たり、0.01〜0.5mL/分で基板に供給する、請求項1〜10いずれか記載の製造方法。 The manufacturing method according to claim 1, wherein the polishing liquid composition is supplied to the substrate at a rate of 0.01 to 0.5 mL / min per 1 cm 2 of the substrate to be polished.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012000734A (en) * 2010-06-18 2012-01-05 Yamaguchi Seiken Kogyo Kk Abrasive composition and method for polishing magnetic disk substrate
JP2013089262A (en) * 2011-10-13 2013-05-13 Asahi Glass Co Ltd Glass substrate for magnetic recording medium and magnetic recording medium

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Publication number Priority date Publication date Assignee Title
JP2002012855A (en) * 2000-04-28 2002-01-15 Kao Corp Abrasive liquid composition
JP2002164307A (en) * 2000-11-24 2002-06-07 Fujimi Inc Composition for polishing, and polishing method using the composition
WO2003072671A1 (en) * 2002-02-22 2003-09-04 Saint-Gobain Ceramics & Plastics, Inc. Cmp formulations for the use on nickel-phosphorus alloys
JP2004277615A (en) * 2003-03-18 2004-10-07 Nihon Micro Coating Co Ltd Polishing slurry and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002012855A (en) * 2000-04-28 2002-01-15 Kao Corp Abrasive liquid composition
JP2002164307A (en) * 2000-11-24 2002-06-07 Fujimi Inc Composition for polishing, and polishing method using the composition
WO2003072671A1 (en) * 2002-02-22 2003-09-04 Saint-Gobain Ceramics & Plastics, Inc. Cmp formulations for the use on nickel-phosphorus alloys
JP2004277615A (en) * 2003-03-18 2004-10-07 Nihon Micro Coating Co Ltd Polishing slurry and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012000734A (en) * 2010-06-18 2012-01-05 Yamaguchi Seiken Kogyo Kk Abrasive composition and method for polishing magnetic disk substrate
JP2013089262A (en) * 2011-10-13 2013-05-13 Asahi Glass Co Ltd Glass substrate for magnetic recording medium and magnetic recording medium

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