JP2005049667A - 液晶表示装置とその製造方法 - Google Patents
液晶表示装置とその製造方法 Download PDFInfo
- Publication number
- JP2005049667A JP2005049667A JP2003282303A JP2003282303A JP2005049667A JP 2005049667 A JP2005049667 A JP 2005049667A JP 2003282303 A JP2003282303 A JP 2003282303A JP 2003282303 A JP2003282303 A JP 2003282303A JP 2005049667 A JP2005049667 A JP 2005049667A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- scanning line
- electrode
- amorphous silicon
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 228
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 190
- 230000008569 process Effects 0.000 claims abstract description 138
- 238000007743 anodising Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 312
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 307
- 239000011347 resin Substances 0.000 claims description 292
- 229920005989 resin Polymers 0.000 claims description 292
- 229910052751 metal Inorganic materials 0.000 claims description 231
- 239000002184 metal Substances 0.000 claims description 231
- 239000004065 semiconductor Substances 0.000 claims description 172
- 230000015572 biosynthetic process Effects 0.000 claims description 138
- 239000012535 impurity Substances 0.000 claims description 125
- 230000001681 protective effect Effects 0.000 claims description 123
- 238000002161 passivation Methods 0.000 claims description 75
- 238000005530 etching Methods 0.000 claims description 69
- 238000000151 deposition Methods 0.000 claims description 60
- 239000003870 refractory metal Substances 0.000 claims description 49
- 239000011159 matrix material Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000010407 anodic oxide Substances 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 230000003647 oxidation Effects 0.000 claims description 20
- 238000007254 oxidation reaction Methods 0.000 claims description 20
- 238000004070 electrodeposition Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000007261 regionalization Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 2
- 238000007687 exposure technique Methods 0.000 abstract description 32
- 238000005516 engineering process Methods 0.000 abstract description 16
- 230000009979 protective mechanism Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 1137
- 239000010408 film Substances 0.000 description 165
- 239000010409 thin film Substances 0.000 description 86
- 238000003860 storage Methods 0.000 description 66
- 239000011521 glass Substances 0.000 description 65
- 239000003990 capacitor Substances 0.000 description 47
- 229910004205 SiNX Inorganic materials 0.000 description 46
- 239000010936 titanium Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 30
- 238000012545 processing Methods 0.000 description 28
- 229910052715 tantalum Inorganic materials 0.000 description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 26
- 229910052760 oxygen Inorganic materials 0.000 description 26
- 239000001301 oxygen Substances 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 25
- 230000005611 electricity Effects 0.000 description 20
- 230000003068 static effect Effects 0.000 description 20
- 238000001259 photo etching Methods 0.000 description 18
- 230000009467 reduction Effects 0.000 description 18
- 238000004380 ashing Methods 0.000 description 16
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 14
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000002048 anodisation reaction Methods 0.000 description 12
- 210000002858 crystal cell Anatomy 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 11
- 239000002356 single layer Substances 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 230000001678 irradiating effect Effects 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 239000009719 polyimide resin Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910016048 MoW Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000010094 polymer processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000005068 transpiration Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229920006127 amorphous resin Polymers 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003282303A JP2005049667A (ja) | 2003-07-30 | 2003-07-30 | 液晶表示装置とその製造方法 |
| TW093109980A TW200510884A (en) | 2003-07-30 | 2004-04-09 | Liquid crystal display and its manufacturing method |
| CN 200410055707 CN1591141A (zh) | 2003-07-30 | 2004-07-30 | 液晶显示装置及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003282303A JP2005049667A (ja) | 2003-07-30 | 2003-07-30 | 液晶表示装置とその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2005049667A true JP2005049667A (ja) | 2005-02-24 |
Family
ID=34267553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003282303A Pending JP2005049667A (ja) | 2003-07-30 | 2003-07-30 | 液晶表示装置とその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2005049667A (enrdf_load_stackoverflow) |
| CN (1) | CN1591141A (enrdf_load_stackoverflow) |
| TW (1) | TW200510884A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007040194A1 (ja) | 2005-10-05 | 2007-04-12 | Idemitsu Kosan Co., Ltd. | Ｔｆｔ基板及びｔｆｔ基板の製造方法 |
| WO2007088722A1 (ja) | 2006-01-31 | 2007-08-09 | Idemitsu Kosan Co., Ltd. | Ｔｆｔ基板及び反射型ｔｆｔ基板並びにそれらの製造方法 |
| WO2007091405A1 (ja) | 2006-02-09 | 2007-08-16 | Idemitsu Kosan Co., Ltd. | 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法 |
| US7291439B2 (en) | 2005-07-08 | 2007-11-06 | Samsung Electronics Co., Ltd. | Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same |
| US8263977B2 (en) | 2005-12-02 | 2012-09-11 | Idemitsu Kosan Co., Ltd. | TFT substrate and TFT substrate manufacturing method |
| US8481351B2 (en) | 2008-12-19 | 2013-07-09 | Sharp Kabushiki Kaisha | Active matrix substrate manufacturing method and liquid crystal display device manufacturing method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405194C (zh) * | 2004-11-29 | 2008-07-23 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
| CN100465747C (zh) * | 2005-09-30 | 2009-03-04 | 乐金显示有限公司 | 液晶显示器件及其制造方法 |
| CN101656232B (zh) * | 2008-08-19 | 2011-10-12 | 北京京东方光电科技有限公司 | 薄膜晶体管阵列基板制造方法 |
-
2003
- 2003-07-30 JP JP2003282303A patent/JP2005049667A/ja active Pending
-
2004
- 2004-04-09 TW TW093109980A patent/TW200510884A/zh not_active IP Right Cessation
- 2004-07-30 CN CN 200410055707 patent/CN1591141A/zh active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7291439B2 (en) | 2005-07-08 | 2007-11-06 | Samsung Electronics Co., Ltd. | Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same |
| WO2007040194A1 (ja) | 2005-10-05 | 2007-04-12 | Idemitsu Kosan Co., Ltd. | Ｔｆｔ基板及びｔｆｔ基板の製造方法 |
| US7982215B2 (en) | 2005-10-05 | 2011-07-19 | Idemitsu Kosan Co., Ltd. | TFT substrate and method for manufacturing TFT substrate |
| US8030195B2 (en) | 2005-10-05 | 2011-10-04 | Idemitsu Kosan Co., Ltd. | TFT substrate and method for manufacturing TFT substrate |
| US8263977B2 (en) | 2005-12-02 | 2012-09-11 | Idemitsu Kosan Co., Ltd. | TFT substrate and TFT substrate manufacturing method |
| US8778722B2 (en) | 2005-12-02 | 2014-07-15 | Idemitsu Kosan Co., Ltd. | TFT substrate and method for producing TFT substrate |
| WO2007088722A1 (ja) | 2006-01-31 | 2007-08-09 | Idemitsu Kosan Co., Ltd. | Ｔｆｔ基板及び反射型ｔｆｔ基板並びにそれらの製造方法 |
| WO2007091405A1 (ja) | 2006-02-09 | 2007-08-16 | Idemitsu Kosan Co., Ltd. | 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法 |
| US8481351B2 (en) | 2008-12-19 | 2013-07-09 | Sharp Kabushiki Kaisha | Active matrix substrate manufacturing method and liquid crystal display device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1591141A (zh) | 2005-03-09 |
| TW200510884A (en) | 2005-03-16 |
| TWI305288B (enrdf_load_stackoverflow) | 2009-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005108912A (ja) | 液晶表示装置とその製造方法 | |
| JP4646539B2 (ja) | 液晶表示装置とその製造方法 | |
| JP2005215275A (ja) | 液晶表示装置とその製造方法 | |
| JP2004317685A (ja) | 液晶表示装置とその製造方法 | |
| JP2005283690A (ja) | 液晶表示装置とその製造方法 | |
| TWI281999B (en) | LCD device and manufacturing method thereof | |
| JP2005049667A (ja) | 液晶表示装置とその製造方法 | |
| JP2005019664A (ja) | 液晶表示装置とその製造方法 | |
| JP2005017669A (ja) | 液晶表示装置とその製造方法 | |
| JP2005106881A (ja) | 液晶表示装置とその製造方法 | |
| JP4538218B2 (ja) | 液晶表示装置とその製造方法 | |
| CN100543569C (zh) | 液晶显示装置及其制造方法 | |
| JP4538219B2 (ja) | 液晶表示装置とその製造方法 | |
| CN100416389C (zh) | 液晶显示装置及其制造方法 | |
| JP5342731B2 (ja) | 液晶表示装置とその製造方法 | |
| JP2005215276A (ja) | 液晶表示装置とその製造方法 | |
| JP4846227B2 (ja) | 液晶表示装置とその製造方法 | |
| JP4871507B2 (ja) | 液晶表示装置とその製造方法 | |
| CN100501549C (zh) | 液晶显示装置及其制造方法 | |
| JP2002190600A (ja) | 液晶画像表示装置と画像表示装置用半導体装置の製造方法 | |
| CN100357817C (zh) | 液晶显示装置及其制造方法 | |
| JP2002184991A (ja) | 液晶画像表示装置と画像表示装置用半導体装置の製造方法 | |
| CN100405194C (zh) | 液晶显示装置及其制造方法 | |
| JP4863667B2 (ja) | 液晶表示装置とその製造方法 | |
| JP2002076363A (ja) | 液晶表示装置 |