CN1591141A - 液晶显示装置及其制造方法 - Google Patents
液晶显示装置及其制造方法 Download PDFInfo
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- CN1591141A CN1591141A CN 200410055707 CN200410055707A CN1591141A CN 1591141 A CN1591141 A CN 1591141A CN 200410055707 CN200410055707 CN 200410055707 CN 200410055707 A CN200410055707 A CN 200410055707A CN 1591141 A CN1591141 A CN 1591141A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 201
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 84
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 138
- 238000000034 method Methods 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims description 342
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 306
- 229910052710 silicon Inorganic materials 0.000 claims description 306
- 239000010703 silicon Substances 0.000 claims description 306
- 229920002120 photoresistant polymer Polymers 0.000 claims description 295
- 238000009413 insulation Methods 0.000 claims description 293
- 229910052751 metal Inorganic materials 0.000 claims description 287
- 239000002184 metal Substances 0.000 claims description 287
- 239000012212 insulator Substances 0.000 claims description 236
- 239000004065 semiconductor Substances 0.000 claims description 171
- 238000005530 etching Methods 0.000 claims description 95
- 230000000052 comparative effect Effects 0.000 claims description 84
- 238000002161 passivation Methods 0.000 claims description 71
- 230000003647 oxidation Effects 0.000 claims description 58
- 238000007254 oxidation reaction Methods 0.000 claims description 58
- 238000003475 lamination Methods 0.000 claims description 55
- 239000011248 coating agent Substances 0.000 claims description 50
- 238000000576 coating method Methods 0.000 claims description 50
- 239000010407 anodic oxide Substances 0.000 claims description 49
- 230000036961 partial effect Effects 0.000 claims description 35
- 239000011159 matrix material Substances 0.000 claims description 30
- 238000011049 filling Methods 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 230000008569 process Effects 0.000 abstract description 13
- 230000002829 reductive effect Effects 0.000 abstract description 7
- 239000011241 protective layer Substances 0.000 abstract description 6
- 238000007687 exposure technique Methods 0.000 abstract description 4
- 238000002048 anodisation reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 614
- 239000010408 film Substances 0.000 description 80
- 238000005516 engineering process Methods 0.000 description 72
- 238000003860 storage Methods 0.000 description 65
- 239000011521 glass Substances 0.000 description 64
- 238000012545 processing Methods 0.000 description 61
- 229910004205 SiNX Inorganic materials 0.000 description 46
- 239000003990 capacitor Substances 0.000 description 43
- 239000010936 titanium Substances 0.000 description 34
- 238000001259 photo etching Methods 0.000 description 28
- 229910052715 tantalum Inorganic materials 0.000 description 27
- 230000003068 static effect Effects 0.000 description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 24
- 239000001301 oxygen Substances 0.000 description 24
- 229910052760 oxygen Inorganic materials 0.000 description 24
- 239000004744 fabric Substances 0.000 description 21
- 238000004380 ashing Methods 0.000 description 18
- 230000006870 function Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 239000004411 aluminium Substances 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- 230000009849 deactivation Effects 0.000 description 10
- 238000004088 simulation Methods 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 229910001936 tantalum oxide Inorganic materials 0.000 description 9
- 238000009832 plasma treatment Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000012467 final product Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 241000270722 Crocodylidae Species 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- LNNWVNGFPYWNQE-GMIGKAJZSA-N desomorphine Chemical compound C1C2=CC=C(O)C3=C2[C@]24CCN(C)[C@H]1[C@@H]2CCC[C@@H]4O3 LNNWVNGFPYWNQE-GMIGKAJZSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 229910016048 MoW Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 240000007643 Phytolacca americana Species 0.000 description 4
- 235000009074 Phytolacca americana Nutrition 0.000 description 4
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 4
- 235000011613 Pinus brutia Nutrition 0.000 description 4
- 241000018646 Pinus brutia Species 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 239000004922 lacquer Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- -1 phenolic aldehyde Chemical class 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- OIJMIQIDIZASII-UHFFFAOYSA-N benzene;benzoic acid Chemical compound C1=CC=CC=C1.OC(=O)C1=CC=CC=C1 OIJMIQIDIZASII-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003282303 | 2003-07-30 | ||
| JP2003282303A JP2005049667A (ja) | 2003-07-30 | 2003-07-30 | 液晶表示装置とその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1591141A true CN1591141A (zh) | 2005-03-09 |
Family
ID=34267553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410055707 Pending CN1591141A (zh) | 2003-07-30 | 2004-07-30 | 液晶显示装置及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2005049667A (enrdf_load_stackoverflow) |
| CN (1) | CN1591141A (enrdf_load_stackoverflow) |
| TW (1) | TW200510884A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405194C (zh) * | 2004-11-29 | 2008-07-23 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
| CN100465747C (zh) * | 2005-09-30 | 2009-03-04 | 乐金显示有限公司 | 液晶显示器件及其制造方法 |
| CN101656232B (zh) * | 2008-08-19 | 2011-10-12 | 北京京东方光电科技有限公司 | 薄膜晶体管阵列基板制造方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101240643B1 (ko) | 2005-07-08 | 2013-03-08 | 삼성디스플레이 주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 |
| US7982215B2 (en) | 2005-10-05 | 2011-07-19 | Idemitsu Kosan Co., Ltd. | TFT substrate and method for manufacturing TFT substrate |
| CN101336485B (zh) | 2005-12-02 | 2012-09-26 | 出光兴产株式会社 | Tft基板及tft基板的制造方法 |
| CN102244103A (zh) | 2006-01-31 | 2011-11-16 | 出光兴产株式会社 | Tft基板 |
| JP2007212699A (ja) | 2006-02-09 | 2007-08-23 | Idemitsu Kosan Co Ltd | 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法 |
| US8481351B2 (en) | 2008-12-19 | 2013-07-09 | Sharp Kabushiki Kaisha | Active matrix substrate manufacturing method and liquid crystal display device manufacturing method |
-
2003
- 2003-07-30 JP JP2003282303A patent/JP2005049667A/ja active Pending
-
2004
- 2004-04-09 TW TW093109980A patent/TW200510884A/zh not_active IP Right Cessation
- 2004-07-30 CN CN 200410055707 patent/CN1591141A/zh active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405194C (zh) * | 2004-11-29 | 2008-07-23 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
| CN100465747C (zh) * | 2005-09-30 | 2009-03-04 | 乐金显示有限公司 | 液晶显示器件及其制造方法 |
| CN101656232B (zh) * | 2008-08-19 | 2011-10-12 | 北京京东方光电科技有限公司 | 薄膜晶体管阵列基板制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005049667A (ja) | 2005-02-24 |
| TW200510884A (en) | 2005-03-16 |
| TWI305288B (enrdf_load_stackoverflow) | 2009-01-11 |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |