JP2005019664A - 液晶表示装置とその製造方法 - Google Patents

液晶表示装置とその製造方法 Download PDF

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Publication number
JP2005019664A
JP2005019664A JP2003182107A JP2003182107A JP2005019664A JP 2005019664 A JP2005019664 A JP 2005019664A JP 2003182107 A JP2003182107 A JP 2003182107A JP 2003182107 A JP2003182107 A JP 2003182107A JP 2005019664 A JP2005019664 A JP 2005019664A
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JP
Japan
Prior art keywords
layer
insulating layer
electrode
scanning line
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003182107A
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English (en)
Japanese (ja)
Inventor
Kiyohiro Kawasaki
清弘 川崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quanta Display Japan Inc
Quanta Display Inc
Original Assignee
Quanta Display Japan Inc
Quanta Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quanta Display Japan Inc, Quanta Display Inc filed Critical Quanta Display Japan Inc
Priority to JP2003182107A priority Critical patent/JP2005019664A/ja
Priority to TW093109963A priority patent/TW200506511A/zh
Publication of JP2005019664A publication Critical patent/JP2005019664A/ja
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2003182107A 2003-06-26 2003-06-26 液晶表示装置とその製造方法 Pending JP2005019664A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003182107A JP2005019664A (ja) 2003-06-26 2003-06-26 液晶表示装置とその製造方法
TW093109963A TW200506511A (en) 2003-06-26 2004-04-09 Liquid crystal display unit and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003182107A JP2005019664A (ja) 2003-06-26 2003-06-26 液晶表示装置とその製造方法

Publications (1)

Publication Number Publication Date
JP2005019664A true JP2005019664A (ja) 2005-01-20

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ID=34182581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003182107A Pending JP2005019664A (ja) 2003-06-26 2003-06-26 液晶表示装置とその製造方法

Country Status (2)

Country Link
JP (1) JP2005019664A (enExample)
TW (1) TW200506511A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006301560A (ja) * 2005-03-25 2006-11-02 Quanta Display Japan Inc 液晶表示装置とその製造方法
WO2007040194A1 (ja) 2005-10-05 2007-04-12 Idemitsu Kosan Co., Ltd. Ｔｆｔ基板及びｔｆｔ基板の製造方法
WO2007088722A1 (ja) 2006-01-31 2007-08-09 Idemitsu Kosan Co., Ltd. Ｔｆｔ基板及び反射型ｔｆｔ基板並びにそれらの製造方法
WO2007091405A1 (ja) 2006-02-09 2007-08-16 Idemitsu Kosan Co., Ltd. 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法
KR20120060745A (ko) * 2010-12-01 2012-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8263977B2 (en) 2005-12-02 2012-09-11 Idemitsu Kosan Co., Ltd. TFT substrate and TFT substrate manufacturing method
US8748879B2 (en) 2007-05-08 2014-06-10 Idemitsu Kosan Co., Ltd. Semiconductor device, thin film transistor and a method for producing the same
KR101808016B1 (ko) * 2008-08-08 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006301560A (ja) * 2005-03-25 2006-11-02 Quanta Display Japan Inc 液晶表示装置とその製造方法
WO2007040194A1 (ja) 2005-10-05 2007-04-12 Idemitsu Kosan Co., Ltd. Ｔｆｔ基板及びｔｆｔ基板の製造方法
US7982215B2 (en) 2005-10-05 2011-07-19 Idemitsu Kosan Co., Ltd. TFT substrate and method for manufacturing TFT substrate
US8030195B2 (en) 2005-10-05 2011-10-04 Idemitsu Kosan Co., Ltd. TFT substrate and method for manufacturing TFT substrate
US8778722B2 (en) 2005-12-02 2014-07-15 Idemitsu Kosan Co., Ltd. TFT substrate and method for producing TFT substrate
US8263977B2 (en) 2005-12-02 2012-09-11 Idemitsu Kosan Co., Ltd. TFT substrate and TFT substrate manufacturing method
WO2007088722A1 (ja) 2006-01-31 2007-08-09 Idemitsu Kosan Co., Ltd. Ｔｆｔ基板及び反射型ｔｆｔ基板並びにそれらの製造方法
WO2007091405A1 (ja) 2006-02-09 2007-08-16 Idemitsu Kosan Co., Ltd. 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法
US8748879B2 (en) 2007-05-08 2014-06-10 Idemitsu Kosan Co., Ltd. Semiconductor device, thin film transistor and a method for producing the same
KR101808016B1 (ko) * 2008-08-08 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2012178545A (ja) * 2010-12-01 2012-09-13 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
KR20120060745A (ko) * 2010-12-01 2012-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2017022389A (ja) * 2010-12-01 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
KR101961486B1 (ko) * 2010-12-01 2019-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

Also Published As

Publication number Publication date
TWI300873B (enExample) 2008-09-11
TW200506511A (en) 2005-02-16

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