JP2004531079A5 - - Google Patents
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- Publication number
- JP2004531079A5 JP2004531079A5 JP2003507877A JP2003507877A JP2004531079A5 JP 2004531079 A5 JP2004531079 A5 JP 2004531079A5 JP 2003507877 A JP2003507877 A JP 2003507877A JP 2003507877 A JP2003507877 A JP 2003507877A JP 2004531079 A5 JP2004531079 A5 JP 2004531079A5
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- supplying
- oxygen
- oxide layer
- partial pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 14
- 238000006243 chemical reaction Methods 0.000 claims 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 9
- 239000001301 oxygen Substances 0.000 claims 9
- 229910052760 oxygen Inorganic materials 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 5
- 230000003647 oxidation Effects 0.000 claims 5
- 238000007254 oxidation reaction Methods 0.000 claims 5
- 230000001590 oxidative effect Effects 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 239000011261 inert gas Substances 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- 239000003054 catalyst Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01115213A EP1271636A1 (en) | 2001-06-22 | 2001-06-22 | Thermal oxidation process control by controlling oxidation agent partial pressure |
| PCT/EP2002/006908 WO2003001580A1 (en) | 2001-06-22 | 2002-06-21 | Thermal oxidation process control by controlling oxidation agent partial pressure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004531079A JP2004531079A (ja) | 2004-10-07 |
| JP2004531079A5 true JP2004531079A5 (enExample) | 2005-09-02 |
| JP3895326B2 JP3895326B2 (ja) | 2007-03-22 |
Family
ID=8177797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003507877A Expired - Fee Related JP3895326B2 (ja) | 2001-06-22 | 2002-06-21 | 酸化剤の分圧の制御による熱酸化プロセス制御 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040219800A1 (enExample) |
| EP (1) | EP1271636A1 (enExample) |
| JP (1) | JP3895326B2 (enExample) |
| WO (1) | WO2003001580A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7727904B2 (en) | 2005-09-16 | 2010-06-01 | Cree, Inc. | Methods of forming SiC MOSFETs with high inversion layer mobility |
| US20100227083A1 (en) * | 2006-12-18 | 2010-09-09 | President And Fellows Of Harvard College | Nanoscale Oxide Coatings |
| JP5792972B2 (ja) * | 2011-03-22 | 2015-10-14 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| US9984894B2 (en) | 2011-08-03 | 2018-05-29 | Cree, Inc. | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| CN110678973B (zh) | 2017-06-02 | 2023-09-19 | 应用材料公司 | 碳化硼硬掩模的干式剥除 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
| US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| US10854483B2 (en) | 2017-11-16 | 2020-12-01 | Applied Materials, Inc. | High pressure steam anneal processing apparatus |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| TW202321493A (zh) * | 2017-12-20 | 2023-06-01 | 美商應用材料股份有限公司 | 金屬薄膜之高壓氧化 |
| CN111699549B (zh) | 2018-01-24 | 2025-03-28 | 应用材料公司 | 使用高压退火的接缝弥合 |
| JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
| KR20210077779A (ko) | 2018-11-16 | 2021-06-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 강화된 확산 프로세스를 사용한 막 증착 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6060730A (ja) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | 半導体装置の製造法 |
| JP3202401B2 (ja) * | 1993-03-26 | 2001-08-27 | 株式会社リコー | Ｍｏｓ型半導体装置におけるゲート酸化膜の製造方法 |
| JPH0774166A (ja) * | 1993-09-02 | 1995-03-17 | Seiko Epson Corp | 熱処理装置 |
| JPH08172084A (ja) * | 1994-12-19 | 1996-07-02 | Kokusai Electric Co Ltd | 半導体成膜方法及びその装置 |
| US6106676A (en) * | 1998-04-16 | 2000-08-22 | The Boc Group, Inc. | Method and apparatus for reactive sputtering employing two control loops |
| US6372663B1 (en) * | 2000-01-13 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Dual-stage wet oxidation process utilizing varying H2/O2 ratios |
| JP2001274154A (ja) * | 2000-01-18 | 2001-10-05 | Applied Materials Inc | 成膜方法、成膜装置、半導体装置及びその製造方法 |
-
2001
- 2001-06-22 EP EP01115213A patent/EP1271636A1/en not_active Withdrawn
-
2002
- 2002-06-21 US US10/481,426 patent/US20040219800A1/en not_active Abandoned
- 2002-06-21 WO PCT/EP2002/006908 patent/WO2003001580A1/en not_active Ceased
- 2002-06-21 JP JP2003507877A patent/JP3895326B2/ja not_active Expired - Fee Related
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