JP2004530897A5 - - Google Patents

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Publication number
JP2004530897A5
JP2004530897A5 JP2003505634A JP2003505634A JP2004530897A5 JP 2004530897 A5 JP2004530897 A5 JP 2004530897A5 JP 2003505634 A JP2003505634 A JP 2003505634A JP 2003505634 A JP2003505634 A JP 2003505634A JP 2004530897 A5 JP2004530897 A5 JP 2004530897A5
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JP
Japan
Prior art keywords
cover plate
proof mass
electrode
physical force
annular
Prior art date
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Pending
Application number
JP2003505634A
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English (en)
Japanese (ja)
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JP2004530897A (ja
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Publication date
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Priority claimed from PCT/US2002/010581 external-priority patent/WO2002103369A1/en
Publication of JP2004530897A publication Critical patent/JP2004530897A/ja
Publication of JP2004530897A5 publication Critical patent/JP2004530897A5/ja
Pending legal-status Critical Current

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JP2003505634A 2001-06-18 2002-04-05 小型で容量表示値が高いシリコン系ｍｅｍｓ加速度計 Pending JP2004530897A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29916201P 2001-06-18 2001-06-18
PCT/US2002/010581 WO2002103369A1 (en) 2001-06-18 2002-04-05 Small size, high capacitance readout silicon based mems accelerometer

Publications (2)

Publication Number Publication Date
JP2004530897A JP2004530897A (ja) 2004-10-07
JP2004530897A5 true JP2004530897A5 (enExample) 2005-12-22

Family

ID=23153561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003505634A Pending JP2004530897A (ja) 2001-06-18 2002-04-05 小型で容量表示値が高いシリコン系ｍｅｍｓ加速度計

Country Status (6)

Country Link
US (1) US6705166B2 (enExample)
EP (1) EP1397692A1 (enExample)
JP (1) JP2004530897A (enExample)
KR (1) KR20040010746A (enExample)
CN (1) CN1543573A (enExample)
WO (1) WO2002103369A1 (enExample)

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KR100919477B1 (ko) * 2009-06-16 2009-09-28 박흥준 측정 오차를 제거하기 위한 유도 전압을 이용한 하중 측정 트랜스듀서 및 그 트랜스듀서를 이용한 하중 측정 시스템
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US8445324B2 (en) * 2009-12-16 2013-05-21 Oakland University Method of wafer-level fabrication of MEMS devices
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US9003899B2 (en) 2012-03-23 2015-04-14 Honeywell International Inc. Force sensor
US8806964B2 (en) 2012-03-23 2014-08-19 Honeywell International Inc. Force sensor
US9027403B2 (en) 2012-04-04 2015-05-12 Analog Devices, Inc. Wide G range accelerometer
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US9341646B2 (en) * 2012-12-19 2016-05-17 Northrop Grumman Guidance And Electronics Company, Inc. Bias reduction in force rebalanced accelerometers
CN104280160B (zh) * 2013-07-03 2016-10-05 中芯国际集成电路制造(上海)有限公司 压力传感器及其形成方法
FI126598B (en) 2014-02-26 2017-03-15 Murata Manufacturing Co Microelectromechanical device with motion limitation devices
US10241129B1 (en) * 2014-08-01 2019-03-26 Faez Ba-Tis MEMS piston-tube based capacitive accelerometer
US9810535B2 (en) 2015-02-10 2017-11-07 Northrop Grumman Systems Corporation Vibrating-mass gyroscope systems and method
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CN105172489B (zh) * 2015-07-28 2018-06-29 安徽工程大学 基于圆环接触式三维压力传感器的胎压检测装置
JP6330777B2 (ja) * 2015-10-13 2018-05-30 株式会社豊田中央研究所 容量式ｍｅｍｓセンサ
FR3052765B1 (fr) * 2016-06-17 2021-06-04 Commissariat Energie Atomique Dispositif microelectromecanique et/ou nanoelectromecanique a deplacement hors-plan comportant des moyens capacitifs a variation de surface
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US11754591B2 (en) * 2019-11-07 2023-09-12 Honeywell International Inc. Vibrating beam accelerometer with pressure damping
CN111141811B (zh) * 2019-12-26 2020-10-16 中国科学院地质与地球物理研究所 一种离子探针的靶托组件及其样品靶制备的方法
US12129167B1 (en) * 2021-05-17 2024-10-29 National Technology & Engineering Solutions Of Sandia, Llc Interlocking proof mass for mems inertial sensing device
CN114279599A (zh) * 2021-12-27 2022-04-05 北京京东方技术开发有限公司 柔性压力传感器、柔性压力应变传感组件及压力检测方法
CN117686130B (zh) * 2024-02-04 2024-04-19 华中科技大学 一种基于扭摆的预紧力地面模拟标定装置及方法
CN119197864B (zh) * 2024-10-10 2025-12-19 中国南方电网有限责任公司 Mems电容式压力传感器及其制备方法

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