JP2004529497A5 - - Google Patents

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Publication number
JP2004529497A5
JP2004529497A5 JP2002581563A JP2002581563A JP2004529497A5 JP 2004529497 A5 JP2004529497 A5 JP 2004529497A5 JP 2002581563 A JP2002581563 A JP 2002581563A JP 2002581563 A JP2002581563 A JP 2002581563A JP 2004529497 A5 JP2004529497 A5 JP 2004529497A5
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JP
Japan
Prior art keywords
heating
reactor
temperature
heating element
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002581563A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004529497A (ja
Filing date
Publication date
Priority claimed from EP01109164A external-priority patent/EP1256973B1/en
Application filed filed Critical
Publication of JP2004529497A publication Critical patent/JP2004529497A/ja
Publication of JP2004529497A5 publication Critical patent/JP2004529497A5/ja
Pending legal-status Critical Current

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JP2002581563A 2001-04-12 2002-04-11 堆積または酸化リアクタを加熱するための加熱システムおよび方法 Pending JP2004529497A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01109164A EP1256973B1 (en) 2001-04-12 2001-04-12 Heating system and method for heating a reactor
PCT/EP2002/004060 WO2002084711A1 (en) 2001-04-12 2002-04-11 Heating system and method for heating an atmospheric reactor

Publications (2)

Publication Number Publication Date
JP2004529497A JP2004529497A (ja) 2004-09-24
JP2004529497A5 true JP2004529497A5 (https=) 2005-06-23

Family

ID=8177130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002581563A Pending JP2004529497A (ja) 2001-04-12 2002-04-11 堆積または酸化リアクタを加熱するための加熱システムおよび方法

Country Status (8)

Country Link
US (1) US6802712B2 (https=)
EP (1) EP1256973B1 (https=)
JP (1) JP2004529497A (https=)
KR (1) KR100561120B1 (https=)
CN (1) CN1288713C (https=)
DE (1) DE60108078T2 (https=)
TW (1) TW541576B (https=)
WO (1) WO2002084711A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
FR2847714B1 (fr) 2002-11-27 2005-02-18 Soitec Silicon On Insulator Procede et dispositif de recuit de tranche de semiconducteur
FR2858715B1 (fr) 2003-08-04 2005-12-30 Soitec Silicon On Insulator Procede de detachement de couche de semiconducteur
US8053324B2 (en) * 2007-08-01 2011-11-08 Texas Instruments Incorporated Method of manufacturing a semiconductor device having improved transistor performance
CN102969220A (zh) * 2011-09-02 2013-03-13 上海华虹Nec电子有限公司 使用炉管进行工艺加工的方法
US10741426B2 (en) * 2017-09-27 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for controlling temperature of furnace in semiconductor fabrication process
EP3647459A1 (en) * 2018-10-31 2020-05-06 Petroceramics S.p.A. Method and an assembly by chemical vapor infiltration of porous components
TWI750749B (zh) * 2020-07-28 2021-12-21 華邦電子股份有限公司 化學氣相沉積製程及膜層的形成方法
CN114308947A (zh) * 2020-09-30 2022-04-12 中国科学院微电子研究所 多晶硅生产设备的清洗方法、清洗装置及多晶硅生产设备
CN112941489A (zh) * 2021-01-27 2021-06-11 长鑫存储技术有限公司 薄膜沉积方法以及薄膜沉积装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960001160B1 (ko) * 1987-07-31 1996-01-19 도오교오 에레구토론 가부시끼가이샤 가열로(加熱爐)
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
US5775889A (en) * 1994-05-17 1998-07-07 Tokyo Electron Limited Heat treatment process for preventing slips in semiconductor wafers
JP2002515648A (ja) * 1998-05-11 2002-05-28 セミトゥール・インコーポレイテッド 加熱反応炉の温度制御システム
JP2002533952A (ja) 1998-12-17 2002-10-08 ヴィシェイ セミコンダクター イッツェホーエ ゲゼルシャフト ミット ベシュレンクテル ハフツング 垂直炉の投入の下におけるウェハのホウ素ドーピング方法
WO2001061736A1 (fr) * 2000-02-18 2001-08-23 Tokyo Electron Limited Procede de traitement d'une plaquette
US6495805B2 (en) * 2000-06-30 2002-12-17 Tokyo Electron Limited Method of determining set temperature trajectory for heat treatment system
US6572371B1 (en) * 2002-05-06 2003-06-03 Messier-Bugatti Gas preheater and process for controlling distribution of preheated reactive gas in a CVI furnace for densification of porous annular substrates

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