JP2004528722A5 - - Google Patents

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Publication number
JP2004528722A5
JP2004528722A5 JP2003500963A JP2003500963A JP2004528722A5 JP 2004528722 A5 JP2004528722 A5 JP 2004528722A5 JP 2003500963 A JP2003500963 A JP 2003500963A JP 2003500963 A JP2003500963 A JP 2003500963A JP 2004528722 A5 JP2004528722 A5 JP 2004528722A5
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JP
Japan
Prior art keywords
process layer
reflection profile
conformality
grating structure
determining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003500963A
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English (en)
Japanese (ja)
Other versions
JP4505786B2 (ja
JP2004528722A (ja
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Publication date
Priority claimed from US09/865,286 external-priority patent/US6479309B1/en
Application filed filed Critical
Publication of JP2004528722A publication Critical patent/JP2004528722A/ja
Publication of JP2004528722A5 publication Critical patent/JP2004528722A5/ja
Application granted granted Critical
Publication of JP4505786B2 publication Critical patent/JP4505786B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003500963A 2001-05-25 2002-04-02 プロセス層の共形性を決定する方法および装置 Expired - Fee Related JP4505786B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/865,286 US6479309B1 (en) 2001-05-25 2001-05-25 Method and apparatus for determining process layer conformality
PCT/US2002/012827 WO2002097878A2 (en) 2001-05-25 2002-04-02 Method and apparatus for determining process layer conformality

Publications (3)

Publication Number Publication Date
JP2004528722A JP2004528722A (ja) 2004-09-16
JP2004528722A5 true JP2004528722A5 (enExample) 2006-01-05
JP4505786B2 JP4505786B2 (ja) 2010-07-21

Family

ID=25345132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003500963A Expired - Fee Related JP4505786B2 (ja) 2001-05-25 2002-04-02 プロセス層の共形性を決定する方法および装置

Country Status (8)

Country Link
US (1) US6479309B1 (enExample)
EP (1) EP1393365B1 (enExample)
JP (1) JP4505786B2 (enExample)
KR (1) KR100970492B1 (enExample)
CN (1) CN1254863C (enExample)
AU (1) AU2002307499A1 (enExample)
TW (1) TW557474B (enExample)
WO (1) WO2002097878A2 (enExample)

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US6639663B1 (en) * 2001-05-23 2003-10-28 Advanced Micro Devices, Inc. Method and apparatus for detecting processing faults using scatterometry measurements
US6785638B2 (en) * 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US6660539B1 (en) * 2001-11-07 2003-12-09 Advanced Micro Devices, Inc. Methods for dynamically controlling etch endpoint time, and system for accomplishing same
US6451621B1 (en) * 2002-01-16 2002-09-17 Advanced Micro Devices, Inc. Using scatterometry to measure resist thickness and control implant
US6960416B2 (en) * 2002-03-01 2005-11-01 Applied Materials, Inc. Method and apparatus for controlling etch processes during fabrication of semiconductor devices
US7225047B2 (en) * 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US6862545B1 (en) * 2003-04-03 2005-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Linewidth measurement tool calibration method employing linewidth standard
US6911399B2 (en) * 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US20060154388A1 (en) * 2005-01-08 2006-07-13 Richard Lewington Integrated metrology chamber for transparent substrates
US7601272B2 (en) * 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing
DE102005049365A1 (de) 2005-03-18 2006-09-21 BAM Bundesanstalt für Materialforschung und -prüfung Kalibriereinrichtung und Farbstoffkit sowie ihre Verwendung zur Charakterisierung von Lumineszenzmesssystemen
US7962113B2 (en) * 2005-10-31 2011-06-14 Silicon Laboratories Inc. Receiver with multi-tone wideband I/Q mismatch calibration and method therefor
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
US20080248598A1 (en) * 2007-04-09 2008-10-09 Rohit Pal Method and apparatus for determining characteristics of a stressed material using scatterometry
US7663766B2 (en) * 2007-09-05 2010-02-16 Advanced Micro Devices, Inc. Incorporating film optical property measurements into scatterometry metrology
US7598099B2 (en) * 2007-11-07 2009-10-06 Tokyo Electron Limited Method of controlling a fabrication process using an iso-dense bias
KR20170138207A (ko) 2016-06-07 2017-12-15 삼성전자주식회사 표면 검사 방법
US11189614B2 (en) 2018-03-16 2021-11-30 Intel Corporation Process etch with reduced loading effect
CN112729133B (zh) * 2020-12-18 2023-02-24 广东省大湾区集成电路与系统应用研究院 一种基于探测光栅衍射强度测量薄膜厚度的方法及装置

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US4600597A (en) * 1984-10-29 1986-07-15 Rca Corporation Method and device for determining the contour of spin-coated thin films of material on substrate topography
US5393624A (en) 1988-07-29 1995-02-28 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device
JP3993888B2 (ja) * 1993-12-28 2007-10-17 ウォレス ティー．ワイ． タング 薄膜を監視するための方法および装置
US5880838A (en) 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
JP2970555B2 (ja) * 1996-10-28 1999-11-02 日本電気株式会社 半導体装置の製造方法及び製造装置
US5867276A (en) 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
JPH10303262A (ja) * 1997-04-25 1998-11-13 Sony Corp 多層膜の膜厚測定方法及び測定装置
JPH1180974A (ja) * 1997-09-03 1999-03-26 Matsushita Electron Corp エッチング速度測定方法
JP3037922B2 (ja) * 1997-11-07 2000-05-08 松下電子工業株式会社 シリコン含有層の評価方法及びシリサイド層の形成工程の管理方法
JPH11162954A (ja) * 1997-12-01 1999-06-18 Sony Corp 光学的手段による薄膜測定方法及び装置並びに成膜装置
JP2000241126A (ja) * 1999-02-25 2000-09-08 Nikon Corp 測定装置及び測定方法
US6245584B1 (en) 1999-07-01 2001-06-12 Advanced Micro Devices Method for detecting adjustment error in photolithographic stepping printer
US6051348A (en) 1999-08-17 2000-04-18 Advanced Micro Devices Method for detecting malfunction in photolithographic fabrication track
JP2002093871A (ja) 2000-09-20 2002-03-29 Hitachi Ltd 半導体製造装置および半導体装置の製造方法
JP2002198410A (ja) 2000-12-27 2002-07-12 Mitsubishi Electric Corp 半導体装置の製造方法及び製造システム

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