KR100970492B1 - 처리층 컨포멀리티의 결정을 위한 방법 및 장치 - Google Patents

처리층 컨포멀리티의 결정을 위한 방법 및 장치 Download PDF

Info

Publication number
KR100970492B1
KR100970492B1 KR1020037015073A KR20037015073A KR100970492B1 KR 100970492 B1 KR100970492 B1 KR 100970492B1 KR 1020037015073 A KR1020037015073 A KR 1020037015073A KR 20037015073 A KR20037015073 A KR 20037015073A KR 100970492 B1 KR100970492 B1 KR 100970492B1
Authority
KR
South Korea
Prior art keywords
processing layer
reflection profile
conformality
determining
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037015073A
Other languages
English (en)
Korean (ko)
Other versions
KR20040004632A (ko
Inventor
롸이트마릴린아이.
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20040004632A publication Critical patent/KR20040004632A/ko
Application granted granted Critical
Publication of KR100970492B1 publication Critical patent/KR100970492B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95684—Patterns showing highly reflecting parts, e.g. metallic elements

Landscapes

  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020037015073A 2001-05-25 2002-04-02 처리층 컨포멀리티의 결정을 위한 방법 및 장치 Expired - Fee Related KR100970492B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/865,286 US6479309B1 (en) 2001-05-25 2001-05-25 Method and apparatus for determining process layer conformality
US09/865,286 2001-05-25
PCT/US2002/012827 WO2002097878A2 (en) 2001-05-25 2002-04-02 Method and apparatus for determining process layer conformality

Publications (2)

Publication Number Publication Date
KR20040004632A KR20040004632A (ko) 2004-01-13
KR100970492B1 true KR100970492B1 (ko) 2010-07-16

Family

ID=25345132

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037015073A Expired - Fee Related KR100970492B1 (ko) 2001-05-25 2002-04-02 처리층 컨포멀리티의 결정을 위한 방법 및 장치

Country Status (8)

Country Link
US (1) US6479309B1 (enExample)
EP (1) EP1393365B1 (enExample)
JP (1) JP4505786B2 (enExample)
KR (1) KR100970492B1 (enExample)
CN (1) CN1254863C (enExample)
AU (1) AU2002307499A1 (enExample)
TW (1) TW557474B (enExample)
WO (1) WO2002097878A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6639663B1 (en) * 2001-05-23 2003-10-28 Advanced Micro Devices, Inc. Method and apparatus for detecting processing faults using scatterometry measurements
US6785638B2 (en) * 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US6660539B1 (en) * 2001-11-07 2003-12-09 Advanced Micro Devices, Inc. Methods for dynamically controlling etch endpoint time, and system for accomplishing same
US6451621B1 (en) * 2002-01-16 2002-09-17 Advanced Micro Devices, Inc. Using scatterometry to measure resist thickness and control implant
US6960416B2 (en) * 2002-03-01 2005-11-01 Applied Materials, Inc. Method and apparatus for controlling etch processes during fabrication of semiconductor devices
US7225047B2 (en) * 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US6862545B1 (en) * 2003-04-03 2005-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Linewidth measurement tool calibration method employing linewidth standard
US6911399B2 (en) * 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US20060154388A1 (en) * 2005-01-08 2006-07-13 Richard Lewington Integrated metrology chamber for transparent substrates
US7601272B2 (en) * 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing
DE102005049365A1 (de) 2005-03-18 2006-09-21 BAM Bundesanstalt für Materialforschung und -prüfung Kalibriereinrichtung und Farbstoffkit sowie ihre Verwendung zur Charakterisierung von Lumineszenzmesssystemen
US7962113B2 (en) * 2005-10-31 2011-06-14 Silicon Laboratories Inc. Receiver with multi-tone wideband I/Q mismatch calibration and method therefor
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
US20080248598A1 (en) * 2007-04-09 2008-10-09 Rohit Pal Method and apparatus for determining characteristics of a stressed material using scatterometry
US7663766B2 (en) * 2007-09-05 2010-02-16 Advanced Micro Devices, Inc. Incorporating film optical property measurements into scatterometry metrology
US7598099B2 (en) * 2007-11-07 2009-10-06 Tokyo Electron Limited Method of controlling a fabrication process using an iso-dense bias
KR20170138207A (ko) 2016-06-07 2017-12-15 삼성전자주식회사 표면 검사 방법
US11189614B2 (en) 2018-03-16 2021-11-30 Intel Corporation Process etch with reduced loading effect
CN112729133B (zh) * 2020-12-18 2023-02-24 广东省大湾区集成电路与系统应用研究院 一种基于探测光栅衍射强度测量薄膜厚度的方法及装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135296A (ja) * 1996-10-28 1998-05-22 Nec Corp 半導体装置の製造方法及び製造装置
JPH11145231A (ja) * 1997-11-07 1999-05-28 Matsushita Electron Corp シリコン含有層の評価方法及びシリサイド層の形成工程の管理方法
JP2002093871A (ja) 2000-09-20 2002-03-29 Hitachi Ltd 半導体製造装置および半導体装置の製造方法
JP2002198410A (ja) 2000-12-27 2002-07-12 Mitsubishi Electric Corp 半導体装置の製造方法及び製造システム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4600597A (en) * 1984-10-29 1986-07-15 Rca Corporation Method and device for determining the contour of spin-coated thin films of material on substrate topography
US5393624A (en) 1988-07-29 1995-02-28 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device
JP3993888B2 (ja) * 1993-12-28 2007-10-17 ウォレス ティー．ワイ． タング 薄膜を監視するための方法および装置
US5880838A (en) 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
US5867276A (en) 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
JPH10303262A (ja) * 1997-04-25 1998-11-13 Sony Corp 多層膜の膜厚測定方法及び測定装置
JPH1180974A (ja) * 1997-09-03 1999-03-26 Matsushita Electron Corp エッチング速度測定方法
JPH11162954A (ja) * 1997-12-01 1999-06-18 Sony Corp 光学的手段による薄膜測定方法及び装置並びに成膜装置
JP2000241126A (ja) * 1999-02-25 2000-09-08 Nikon Corp 測定装置及び測定方法
US6245584B1 (en) 1999-07-01 2001-06-12 Advanced Micro Devices Method for detecting adjustment error in photolithographic stepping printer
US6051348A (en) 1999-08-17 2000-04-18 Advanced Micro Devices Method for detecting malfunction in photolithographic fabrication track

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135296A (ja) * 1996-10-28 1998-05-22 Nec Corp 半導体装置の製造方法及び製造装置
JPH11145231A (ja) * 1997-11-07 1999-05-28 Matsushita Electron Corp シリコン含有層の評価方法及びシリサイド層の形成工程の管理方法
JP2002093871A (ja) 2000-09-20 2002-03-29 Hitachi Ltd 半導体製造装置および半導体装置の製造方法
JP2002198410A (ja) 2000-12-27 2002-07-12 Mitsubishi Electric Corp 半導体装置の製造方法及び製造システム

Also Published As

Publication number Publication date
JP4505786B2 (ja) 2010-07-21
WO2002097878A3 (en) 2003-10-16
EP1393365A2 (en) 2004-03-03
EP1393365B1 (en) 2012-01-11
CN1515030A (zh) 2004-07-21
JP2004528722A (ja) 2004-09-16
WO2002097878A2 (en) 2002-12-05
TW557474B (en) 2003-10-11
US6479309B1 (en) 2002-11-12
KR20040004632A (ko) 2004-01-13
CN1254863C (zh) 2006-05-03
AU2002307499A1 (en) 2002-12-09

Similar Documents

Publication Publication Date Title
KR100970492B1 (ko) 처리층 컨포멀리티의 결정을 위한 방법 및 장치
US7456110B2 (en) Method and apparatus for controlling etch selectivity
US7939450B2 (en) Method and apparatus for spacer-optimization (S-O)
US8346506B2 (en) Transforming metrology data from a semiconductor treatment system using multivariate analysis
US7713758B2 (en) Method and apparatus for optimizing a gate channel
US7899637B2 (en) Method and apparatus for creating a gate optimization evaluation library
US6650423B1 (en) Method and apparatus for determining column dimensions using scatterometry
US7765077B2 (en) Method and apparatus for creating a Spacer-Optimization (S-O) library
WO2002080264A2 (en) Method and apparatus for controlling feature critical dimensions based on scatterometry derived profile
US6773939B1 (en) Method and apparatus for determining critical dimension variation in a line structure
US7262864B1 (en) Method and apparatus for determining grid dimensions using scatterometry
KR100964001B1 (ko) 반도체 제조 공정을 제어하기 위한 고수율의 분광 스케테로메트리측정을 사용하는 방법과 이를 구현하는 시스템
US20080248598A1 (en) Method and apparatus for determining characteristics of a stressed material using scatterometry
US7663766B2 (en) Incorporating film optical property measurements into scatterometry metrology
US6875622B1 (en) Method and apparatus for determining electromagnetic properties of a process layer using scatterometry measurements
US6804014B1 (en) Method and apparatus for determining contact opening dimensions using scatterometry

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20090114

Effective date: 20100531

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20100531

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2003 7015073

Appeal request date: 20090114

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2009101000304

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20130621

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20140702

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20150617

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160709

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160709