JP2004510328A - 感光性半導体層を有する光センサ用のｔｆｔアクティブマトリックスおよび該マトリックスを有する光センサ - Google Patents

感光性半導体層を有する光センサ用のｔｆｔアクティブマトリックスおよび該マトリックスを有する光センサ Download PDF

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Publication number
JP2004510328A
JP2004510328A JP2002529812A JP2002529812A JP2004510328A JP 2004510328 A JP2004510328 A JP 2004510328A JP 2002529812 A JP2002529812 A JP 2002529812A JP 2002529812 A JP2002529812 A JP 2002529812A JP 2004510328 A JP2004510328 A JP 2004510328A
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JP
Japan
Prior art keywords
lines
matrix
pixel
electrode
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2002529812A
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English (en)
Japanese (ja)
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JP2004510328A5 (https=
Inventor
サンソン，　エリック
シドロ，　ニコラス
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Thales Avionics LCD SA
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Thales Avionics LCD SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Thales Avionics LCD SA filed Critical Thales Avionics LCD SA
Publication of JP2004510328A publication Critical patent/JP2004510328A/ja
Publication of JP2004510328A5 publication Critical patent/JP2004510328A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
JP2002529812A 2000-09-19 2001-09-18 感光性半導体層を有する光センサ用のｔｆｔアクティブマトリックスおよび該マトリックスを有する光センサ Pending JP2004510328A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0011927A FR2814281B1 (fr) 2000-09-19 2000-09-19 Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
PCT/FR2001/002900 WO2002025699A2 (fr) 2000-09-19 2001-09-18 Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice

Publications (2)

Publication Number Publication Date
JP2004510328A true JP2004510328A (ja) 2004-04-02
JP2004510328A5 JP2004510328A5 (https=) 2005-09-15

Family

ID=8854450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002529812A Pending JP2004510328A (ja) 2000-09-19 2001-09-18 感光性半導体層を有する光センサ用のｔｆｔアクティブマトリックスおよび該マトリックスを有する光センサ

Country Status (7)

Country Link
US (1) US6815716B2 (https=)
EP (1) EP1332519B1 (https=)
JP (1) JP2004510328A (https=)
AU (1) AU2001293910A1 (https=)
DE (1) DE60121785T2 (https=)
FR (1) FR2814281B1 (https=)
WO (1) WO2002025699A2 (https=)

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US7009663B2 (en) 2003-12-17 2006-03-07 Planar Systems, Inc. Integrated optical light sensitive active matrix liquid crystal display
US7408598B2 (en) 2002-02-20 2008-08-05 Planar Systems, Inc. Light sensitive display with selected interval of light sensitive elements
US7053967B2 (en) 2002-05-23 2006-05-30 Planar Systems, Inc. Light sensitive display
US6738178B2 (en) * 2002-06-27 2004-05-18 Koninklijke Philips Electronics N.V. Electrically configurable photonic crystal
US20080084374A1 (en) 2003-02-20 2008-04-10 Planar Systems, Inc. Light sensitive display
US7773139B2 (en) * 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
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EP2232589B1 (en) * 2007-12-18 2013-11-20 Marek T. Michalewicz Quantum tunneling photodetector array
JP5596145B2 (ja) 2009-08-06 2014-09-24 ルメクシス・コーポレーション 直列ネットワーキングファイバーツーザシート機内エンターテイメントシステム
WO2011020071A1 (en) 2009-08-14 2011-02-17 Lumexis Corp. Video display unit docking assembly for fiber-to-the-screen inflight entertainment system
WO2011022708A1 (en) 2009-08-20 2011-02-24 Lumexis Corp. Serial networking fiber optic inflight entertainment system network configuration
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10845901B2 (en) 2013-07-31 2020-11-24 Apple Inc. Touch controller architecture
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
US12153764B1 (en) 2020-09-25 2024-11-26 Apple Inc. Stylus with receive architecture for position determination

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US6323490B1 (en) * 1998-03-20 2001-11-27 Kabushiki Kaisha Toshiba X-ray semiconductor detector
JP3447947B2 (ja) * 1998-03-20 2003-09-16 株式会社東芝 Ｘ線撮像装置
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
JP3916823B2 (ja) * 1999-04-07 2007-05-23 シャープ株式会社 アクティブマトリクス基板およびその製造方法、並びにフラットパネル型イメージセンサ
FR2796211B1 (fr) 1999-07-09 2001-10-12 Thomson Csf Cavite optique instable pour faisceau laser
FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice

Also Published As

Publication number Publication date
WO2002025699A3 (fr) 2002-05-16
AU2001293910A1 (en) 2002-04-02
DE60121785T2 (de) 2007-10-18
FR2814281B1 (fr) 2003-08-29
EP1332519B1 (fr) 2006-07-26
WO2002025699A2 (fr) 2002-03-28
FR2814281A1 (fr) 2002-03-22
US20040036092A1 (en) 2004-02-26
US6815716B2 (en) 2004-11-09
DE60121785D1 (de) 2006-09-07
EP1332519A2 (fr) 2003-08-06

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