JP2004503089A - 銅のメタライゼーションに関するビアファーストのデュアルダマシン法 - Google Patents
銅のメタライゼーションに関するビアファーストのデュアルダマシン法 Download PDFInfo
- Publication number
- JP2004503089A JP2004503089A JP2002507438A JP2002507438A JP2004503089A JP 2004503089 A JP2004503089 A JP 2004503089A JP 2002507438 A JP2002507438 A JP 2002507438A JP 2002507438 A JP2002507438 A JP 2002507438A JP 2004503089 A JP2004503089 A JP 2004503089A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- forming
- vias
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 239000010949 copper Substances 0.000 title claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000009977 dual effect Effects 0.000 title description 6
- 238000001465 metallisation Methods 0.000 title description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 230000003667 anti-reflective effect Effects 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000005380 borophosphosilicate glass Substances 0.000 claims 2
- 239000006117 anti-reflective coating Substances 0.000 abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 114
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60854000A | 2000-06-30 | 2000-06-30 | |
| US09/608,541 | 2000-06-30 | ||
| PCT/US2001/021161 WO2002003457A2 (en) | 2000-06-30 | 2001-07-02 | Via first dual damascene process for copper metallization |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004503089A true JP2004503089A (ja) | 2004-01-29 |
| JP2004503089A6 JP2004503089A6 (ja) | 2004-08-05 |
| JP2004503089A5 JP2004503089A5 (enrdf_load_stackoverflow) | 2005-02-03 |
Family
ID=24436949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002507438A Pending JP2004503089A (ja) | 2000-06-30 | 2001-07-02 | 銅のメタライゼーションに関するビアファーストのデュアルダマシン法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2004503089A (enrdf_load_stackoverflow) |
| KR (1) | KR100474605B1 (enrdf_load_stackoverflow) |
| TW (1) | TW519725B (enrdf_load_stackoverflow) |
| WO (1) | WO2002003457A2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102454363B1 (ko) | 2020-08-24 | 2022-10-14 | 주식회사 세움피엔에프 | 운동기구의 수평 이동 장치 |
| KR102491980B1 (ko) | 2021-01-05 | 2023-01-27 | 최순복 | 필라테스용 레더바렐 |
| CN113394184B (zh) * | 2021-06-09 | 2022-06-17 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
| US11876047B2 (en) | 2021-09-14 | 2024-01-16 | International Business Machines Corporation | Decoupled interconnect structures |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904565A (en) * | 1997-07-17 | 1999-05-18 | Sharp Microelectronics Technology, Inc. | Low resistance contact between integrated circuit metal levels and method for same |
| US6057239A (en) * | 1997-12-17 | 2000-05-02 | Advanced Micro Devices, Inc. | Dual damascene process using sacrificial spin-on materials |
| US6127258A (en) * | 1998-06-25 | 2000-10-03 | Motorola Inc. | Method for forming a semiconductor device |
| US6380096B2 (en) * | 1998-07-09 | 2002-04-30 | Applied Materials, Inc. | In-situ integrated oxide etch process particularly useful for copper dual damascene |
| US6245662B1 (en) * | 1998-07-23 | 2001-06-12 | Applied Materials, Inc. | Method of producing an interconnect structure for an integrated circuit |
| JP2000150644A (ja) * | 1998-11-10 | 2000-05-30 | Mitsubishi Electric Corp | 半導体デバイスの製造方法 |
| IL147301A0 (en) * | 1999-06-30 | 2002-08-14 | Intel Corp | Method of projecting an underlying wiring layer during dual damascene processing |
-
2001
- 2001-07-02 JP JP2002507438A patent/JP2004503089A/ja active Pending
- 2001-07-02 KR KR10-2002-7018006A patent/KR100474605B1/ko not_active Expired - Lifetime
- 2001-07-02 WO PCT/US2001/021161 patent/WO2002003457A2/en active IP Right Grant
- 2001-07-02 TW TW090116395A patent/TW519725B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002003457A3 (en) | 2002-06-06 |
| WO2002003457A2 (en) | 2002-01-10 |
| TW519725B (en) | 2003-02-01 |
| KR20030020324A (ko) | 2003-03-08 |
| KR100474605B1 (ko) | 2005-03-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060626 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060829 |
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| A601 | Written request for extension of time |
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| A602 | Written permission of extension of time |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070109 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080819 |