JP2004319814A5 - - Google Patents

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Publication number
JP2004319814A5
JP2004319814A5 JP2003112568A JP2003112568A JP2004319814A5 JP 2004319814 A5 JP2004319814 A5 JP 2004319814A5 JP 2003112568 A JP2003112568 A JP 2003112568A JP 2003112568 A JP2003112568 A JP 2003112568A JP 2004319814 A5 JP2004319814 A5 JP 2004319814A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003112568A
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JP2004319814A (ja
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Publication date
Application filed filed Critical
Priority to JP2003112568A priority Critical patent/JP2004319814A/ja
Priority claimed from JP2003112568A external-priority patent/JP2004319814A/ja
Priority to US10/648,223 priority patent/US6838777B2/en
Publication of JP2004319814A publication Critical patent/JP2004319814A/ja
Publication of JP2004319814A5 publication Critical patent/JP2004319814A5/ja
Pending legal-status Critical Current

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JP2003112568A 2003-04-17 2003-04-17 半導体装置及びその製造方法 Pending JP2004319814A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003112568A JP2004319814A (ja) 2003-04-17 2003-04-17 半導体装置及びその製造方法
US10/648,223 US6838777B2 (en) 2003-04-17 2003-08-27 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003112568A JP2004319814A (ja) 2003-04-17 2003-04-17 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2004319814A JP2004319814A (ja) 2004-11-11
JP2004319814A5 true JP2004319814A5 (ja) 2006-04-06

Family

ID=33157011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003112568A Pending JP2004319814A (ja) 2003-04-17 2003-04-17 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US6838777B2 (ja)
JP (1) JP2004319814A (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485516B2 (en) * 2005-11-21 2009-02-03 International Business Machines Corporation Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation
JP5130834B2 (ja) * 2007-09-05 2013-01-30 ソニー株式会社 半導体装置およびその製造方法
US20100155860A1 (en) * 2008-12-24 2010-06-24 Texas Instruments Incorporated Two step method to create a gate electrode using a physical vapor deposited layer and a chemical vapor deposited layer
KR101175148B1 (ko) * 2010-10-14 2012-08-20 주식회사 유진테크 3차원 구조의 메모리 소자를 제조하는 방법 및 장치
CN103311109B (zh) * 2012-03-12 2016-02-10 上海华虹宏力半导体制造有限公司 侧墙的形成方法和用侧墙定义图形结构的方法
US9520474B2 (en) * 2013-09-12 2016-12-13 Taiwan Semiconductor Manufacturing Company Limited Methods of forming a semiconductor device with a gate stack having tapered sidewalls
US10811320B2 (en) 2017-09-29 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Footing removal in cut-metal process

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH053209A (ja) * 1990-09-25 1993-01-08 Matsushita Electron Corp 半導体装置およびその製造方法
JPH04155932A (ja) * 1990-10-19 1992-05-28 Nec Corp 半導体装置の製造方法
JP3125359B2 (ja) * 1991-10-07 2001-01-15 株式会社デンソー 半導体装置の製造方法
JPH0832058A (ja) * 1994-07-11 1996-02-02 Sony Corp 半導体装置の製造方法
JPH08204184A (ja) * 1995-01-27 1996-08-09 Sony Corp Ｍｏｓトランジスタ及びｍｏｓトランジスタの形成方法
JPH08264784A (ja) * 1995-03-28 1996-10-11 Sony Corp 電界効果型半導体装置の製造方法
US5877530A (en) * 1996-07-31 1999-03-02 Lsi Logic Corporation Formation of gradient doped profile region between channel region and heavily doped source/drain contact region of MOS device in integrated circuit structure using a re-entrant gate electrode and a higher dose drain implantation
US5863824A (en) * 1997-12-18 1999-01-26 Advanced Micro Devices Method of forming semiconductor devices using gate electrode length and spacer width for controlling drivecurrent strength
US20010009792A1 (en) * 1998-09-28 2001-07-26 Subhas Bothra Reduced gate length transistor structures and methods for fabricating the same
JP2001021906A (ja) * 1999-07-12 2001-01-26 Canon Inc 液晶素子
JP4932087B2 (ja) * 2001-01-29 2012-05-16 三菱電機株式会社 半導体装置およびその製造方法
JP2002289841A (ja) * 2001-03-27 2002-10-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6433871B1 (en) * 2001-05-25 2002-08-13 Advanced Micron Devices, Inc. Method of using scatterometry measurements to determine and control gate electrode profiles
US6703648B1 (en) * 2002-10-29 2004-03-09 Advanced Micro Devices, Inc. Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication

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