JP2004319060A - 薄膜磁気ヘッドおよびその製造方法 - Google Patents
薄膜磁気ヘッドおよびその製造方法 Download PDFInfo
- Publication number
- JP2004319060A JP2004319060A JP2003409417A JP2003409417A JP2004319060A JP 2004319060 A JP2004319060 A JP 2004319060A JP 2003409417 A JP2003409417 A JP 2003409417A JP 2003409417 A JP2003409417 A JP 2003409417A JP 2004319060 A JP2004319060 A JP 2004319060A
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- JP
- Japan
- Prior art keywords
- film
- layer
- domain control
- magnetic
- magnetic domain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 292
- 239000010409 thin film Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 289
- 230000005381 magnetic domain Effects 0.000 claims abstract description 284
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 25
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 59
- 230000005415 magnetization Effects 0.000 claims description 47
- 230000000694 effects Effects 0.000 claims description 22
- 230000005294 ferromagnetic effect Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 claims description 4
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 2
- 239000010952 cobalt-chrome Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 35
- 239000010410 layer Substances 0.000 description 417
- 230000004048 modification Effects 0.000 description 25
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- 238000009826 distribution Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 8
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000001747 exhibiting effect Effects 0.000 description 5
- 229910003321 CoFe Inorganic materials 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
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- 230000010485 coping Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 230000005303 antiferromagnetism Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMUXBDSQTCDPJZ-UHFFFAOYSA-N chromium titanium Chemical compound [Ti].[Cr] UMUXBDSQTCDPJZ-UHFFFAOYSA-N 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
- Y10T29/49052—Machining magnetic material [e.g., grinding, etching, polishing] by etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003409417A JP2004319060A (ja) | 2003-03-28 | 2003-12-08 | 薄膜磁気ヘッドおよびその製造方法 |
| US10/809,529 US7193821B2 (en) | 2003-03-28 | 2004-03-26 | Thin film magnetic head and method for manufacturing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003092842 | 2003-03-28 | ||
| JP2003409417A JP2004319060A (ja) | 2003-03-28 | 2003-12-08 | 薄膜磁気ヘッドおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004319060A true JP2004319060A (ja) | 2004-11-11 |
| JP2004319060A5 JP2004319060A5 (https=) | 2005-06-09 |
Family
ID=32993070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003409417A Pending JP2004319060A (ja) | 2003-03-28 | 2003-12-08 | 薄膜磁気ヘッドおよびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7193821B2 (https=) |
| JP (1) | JP2004319060A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005167236A (ja) * | 2003-11-20 | 2005-06-23 | Headway Technologies Inc | 膜面直交電流型巨大磁気抵抗効果センサおよびその製造方法 |
| US7154714B2 (en) * | 2002-09-10 | 2006-12-26 | Hitachi Global Storage Technologies Japan, Ltd. | Recording/reproducing separated type magnetic head having differential bias type magnetic domain control structure |
| US8149546B2 (en) | 2007-10-26 | 2012-04-03 | Tdk Corporation | Magnetic field detecting element including tri-layer stack with stepped portion |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022614A (ja) * | 2002-06-13 | 2004-01-22 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| US7764469B2 (en) * | 2004-10-29 | 2010-07-27 | Hitachi Global Storage Technologies Netherlands B.V. | Notched shield and pole structure with slanted wing for perpendicular recording |
| US7616403B2 (en) * | 2004-10-29 | 2009-11-10 | Hitachi Global Storage Technologies Netherlands B.V. | Winged design for reducing corner stray magnetic fields |
| US7419610B2 (en) * | 2005-08-05 | 2008-09-02 | Hitachi Global Storage Technologies Netherlands B.V. | Method of partial depth material removal for fabrication of CPP read sensor |
| JP2007280567A (ja) * | 2006-04-11 | 2007-10-25 | Hitachi Global Storage Technologies Netherlands Bv | 薄膜磁気ヘッド及びその製造方法 |
| JP2007287239A (ja) * | 2006-04-17 | 2007-11-01 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッドとその形成方法 |
| JP2008021896A (ja) * | 2006-07-14 | 2008-01-31 | Tdk Corp | Cpp構造のgmr素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置 |
| JP2008084373A (ja) * | 2006-09-26 | 2008-04-10 | Tdk Corp | 薄膜磁気ヘッドの製造方法及び薄膜磁気ヘッド |
| US20080088985A1 (en) * | 2006-10-16 | 2008-04-17 | Driskill-Smith Alexander Adria | Magnetic head having CPP sensor with partially milled stripe height |
| JP2008192222A (ja) * | 2007-02-02 | 2008-08-21 | Hitachi Global Storage Technologies Netherlands Bv | 磁気検出素子及びその製造方法 |
| US8822046B2 (en) | 2012-04-30 | 2014-09-02 | Seagate Technology Llc | Stack with wide seed layer |
| US20160365104A1 (en) * | 2015-06-15 | 2016-12-15 | Seagate Technology Llc | Magnetoresistive sensor fabrication |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6636396B1 (en) * | 1999-04-08 | 2003-10-21 | International Business Machines Corporation | Spin value read head stabilized without hard bias layers |
| JP3699000B2 (ja) | 2001-04-09 | 2005-09-21 | アルプス電気株式会社 | スピンバルブ型薄膜素子およびその製造方法 |
| JP2002329905A (ja) | 2001-05-02 | 2002-11-15 | Fujitsu Ltd | Cpp構造磁気抵抗効果素子およびその製造方法 |
| US6754056B2 (en) * | 2002-01-18 | 2004-06-22 | International Business Machines Corporation | Read head having a tunnel junction sensor with a free layer biased by exchange coupling with insulating antiferromagnetic (AFM) layers |
| JP4270797B2 (ja) * | 2002-03-12 | 2009-06-03 | Tdk株式会社 | 磁気検出素子 |
| US6865062B2 (en) * | 2002-03-21 | 2005-03-08 | International Business Machines Corporation | Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer |
| US7016168B2 (en) * | 2003-11-20 | 2006-03-21 | Headway Technologies, Inc. | Method of increasing CPP GMR in a spin valve structure |
-
2003
- 2003-12-08 JP JP2003409417A patent/JP2004319060A/ja active Pending
-
2004
- 2004-03-26 US US10/809,529 patent/US7193821B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7154714B2 (en) * | 2002-09-10 | 2006-12-26 | Hitachi Global Storage Technologies Japan, Ltd. | Recording/reproducing separated type magnetic head having differential bias type magnetic domain control structure |
| JP2005167236A (ja) * | 2003-11-20 | 2005-06-23 | Headway Technologies Inc | 膜面直交電流型巨大磁気抵抗効果センサおよびその製造方法 |
| US8149546B2 (en) | 2007-10-26 | 2012-04-03 | Tdk Corporation | Magnetic field detecting element including tri-layer stack with stepped portion |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040190205A1 (en) | 2004-09-30 |
| US7193821B2 (en) | 2007-03-20 |
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