JP2004314289A - マイクロマシンの製造方法 - Google Patents
マイクロマシンの製造方法 Download PDFInfo
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- JP2004314289A JP2004314289A JP2004068325A JP2004068325A JP2004314289A JP 2004314289 A JP2004314289 A JP 2004314289A JP 2004068325 A JP2004068325 A JP 2004068325A JP 2004068325 A JP2004068325 A JP 2004068325A JP 2004314289 A JP2004314289 A JP 2004314289A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 77
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 14
- 238000012545 processing Methods 0.000 abstract description 10
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 75
- 229910004298 SiO 2 Inorganic materials 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000010354 integration Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0012—Protection against reverse engineering, unauthorised use, use in unintended manner, wrong insertion or pin assignment
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
【解決手段】振動子4を備えたマイクロマシン1の製造方法において、振動子4の可動部周囲に犠牲層を形成する工程と、犠牲層上をオーバーコート膜8で覆うとともにそのオーバーコート膜8に犠牲層へ通じる貫通口10を形成する工程と、可動部周囲に空間を形成するために貫通口10を用いて犠牲層を取り除く犠牲層エッチングを行う工程と、犠牲層エッチングの後に減圧下における成膜処理を行って貫通口10を封止する工程とを含む。
【選択図】図1
Description
また、犠牲層エッチングの後に減圧下における成膜処理を行って貫通口を封止する工程とを含むことから、その工程にて、振動子の可動部周囲の空間が減圧状態で封止される。しかも、減圧下における成膜処理により貫通口を封止するため、半導体プロセス(例えば、CMOSプロセス)における成膜技術をそのまま利用して実現することが可能となり、当該半導体プロセスにおける他の工程と連続的に行えるとともに、真空封止のための特殊なパッケージング技術を要することもない。
Claims (5)
- 振動子を備えたマイクロマシンの製造方法であって、
前記振動子の可動部周囲に犠牲層を形成する工程と、
前記犠牲層上をオーバーコート膜で覆うとともに、当該オーバーコート膜に前記犠牲層へ通じる貫通口を形成する工程と、
前記可動部周囲に空間を形成するために前記貫通口を用いて前記犠牲層を取り除く犠牲層エッチングを行う工程と、
前記犠牲層エッチングの後に減圧下における成膜処理を行って前記貫通口を封止する工程と
を含むことを特徴とするマイクロマシンの製造方法。 - 前記振動子に振動を励起する手段を有したマイクロマシンに適用されることを特徴とする請求項1記載のマイクロマシンの製造方法。
- 前記振動を励起する手段に静電を用いることを特徴とする請求項2記載のマイクロマシンの製造方法。
- 前記振動を励起する手段にピエゾを用いることを特徴とする請求項2記載のマイクロマシンの製造方法。
- 前記減圧下における成膜処理は、スパッタリングによる成膜処理である
ことを特徴とする請求項1記載のマイクロマシンの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004068325A JP4333417B2 (ja) | 2003-04-02 | 2004-03-11 | マイクロマシンの製造方法 |
TW093109159A TWI245020B (en) | 2003-04-02 | 2004-04-02 | Process for fabricating micromachine |
US10/551,271 US8268660B2 (en) | 2003-04-02 | 2004-04-02 | Process for fabricating micromachine |
KR1020057018242A KR101127167B1 (ko) | 2003-04-02 | 2004-04-02 | 마이크로머신의 제조방법 |
PCT/JP2004/004822 WO2004089812A1 (ja) | 2003-04-02 | 2004-04-02 | マイクロマシンの製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003098782 | 2003-04-02 | ||
JP2004068325A JP4333417B2 (ja) | 2003-04-02 | 2004-03-11 | マイクロマシンの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004314289A true JP2004314289A (ja) | 2004-11-11 |
JP4333417B2 JP4333417B2 (ja) | 2009-09-16 |
Family
ID=33161486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004068325A Expired - Fee Related JP4333417B2 (ja) | 2003-04-02 | 2004-03-11 | マイクロマシンの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8268660B2 (ja) |
JP (1) | JP4333417B2 (ja) |
KR (1) | KR101127167B1 (ja) |
TW (1) | TWI245020B (ja) |
WO (1) | WO2004089812A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007222956A (ja) * | 2006-02-21 | 2007-09-06 | Seiko Epson Corp | Memsデバイスおよびmemsデバイスの製造方法 |
JP2010082797A (ja) * | 2007-10-22 | 2010-04-15 | Toshiba Corp | マイクロマシン装置及びマイクロマシン装置の製造方法 |
US8921951B2 (en) | 2009-06-04 | 2014-12-30 | Kabushiki Kaisha Toshiba | MEMS device and manufacturing method thereof |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008188711A (ja) * | 2007-02-05 | 2008-08-21 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
US8569091B2 (en) * | 2009-08-27 | 2013-10-29 | International Business Machines Corporation | Integrated circuit switches, design structure and methods of fabricating the same |
DE102010000666A1 (de) * | 2010-01-05 | 2011-07-07 | Robert Bosch GmbH, 70469 | Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung |
JP5485714B2 (ja) * | 2010-01-07 | 2014-05-07 | セイコーインスツル株式会社 | パッケージの製造方法 |
US20130106875A1 (en) * | 2011-11-02 | 2013-05-02 | Qualcomm Mems Technologies, Inc. | Method of improving thin-film encapsulation for an electromechanical systems assembly |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4262399A (en) * | 1978-11-08 | 1981-04-21 | General Electric Co. | Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit |
JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
US5198716A (en) * | 1991-12-09 | 1993-03-30 | The United States Of America As Represented By The United States Department Of Energy | Micro-machined resonator |
JPH0646207A (ja) * | 1992-01-14 | 1994-02-18 | Matsushita Electric Ind Co Ltd | 圧電駆動マイクロスキャナ |
WO1994014240A1 (en) * | 1992-12-11 | 1994-06-23 | The Regents Of The University Of California | Microelectromechanical signal processors |
JPH07131280A (ja) * | 1993-10-28 | 1995-05-19 | Toyota Motor Corp | 振動子の支持構造 |
JPH09148467A (ja) | 1995-11-24 | 1997-06-06 | Murata Mfg Co Ltd | 動作素子の真空封止の構造およびその製造方法 |
DE19844686A1 (de) * | 1998-09-29 | 2000-04-06 | Fraunhofer Ges Forschung | Mikromechanischer Drehratensensor und Verfahren zur Herstellung |
WO2001063645A2 (en) * | 2000-02-23 | 2001-08-30 | National Center For Scientific Research 'demokrit Os Institute Of Microelectronics | Capacitive pressure-responsive devices and their fabrication |
US7008812B1 (en) * | 2000-05-30 | 2006-03-07 | Ic Mechanics, Inc. | Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation |
US6448604B1 (en) * | 2000-09-12 | 2002-09-10 | Robert Bosch Gmbh | Integrated adjustable capacitor |
WO2002073673A1 (en) * | 2001-03-13 | 2002-09-19 | Rochester Institute Of Technology | A micro-electro-mechanical switch and a method of using and making thereof |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
US6621134B1 (en) * | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
US6635509B1 (en) * | 2002-04-12 | 2003-10-21 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
JP3731750B2 (ja) | 2002-06-24 | 2006-01-05 | 松下電器産業株式会社 | 赤外線センサの製造方法 |
US7364932B2 (en) | 2002-12-27 | 2008-04-29 | Matsushita Electric Industrial Co., Ltd. | Electronic device and method of manufacturing the same |
-
2004
- 2004-03-11 JP JP2004068325A patent/JP4333417B2/ja not_active Expired - Fee Related
- 2004-04-02 TW TW093109159A patent/TWI245020B/zh not_active IP Right Cessation
- 2004-04-02 WO PCT/JP2004/004822 patent/WO2004089812A1/ja active Application Filing
- 2004-04-02 KR KR1020057018242A patent/KR101127167B1/ko active IP Right Grant
- 2004-04-02 US US10/551,271 patent/US8268660B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007222956A (ja) * | 2006-02-21 | 2007-09-06 | Seiko Epson Corp | Memsデバイスおよびmemsデバイスの製造方法 |
JP2010082797A (ja) * | 2007-10-22 | 2010-04-15 | Toshiba Corp | マイクロマシン装置及びマイクロマシン装置の製造方法 |
US8921951B2 (en) | 2009-06-04 | 2014-12-30 | Kabushiki Kaisha Toshiba | MEMS device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
US20060216847A1 (en) | 2006-09-28 |
KR101127167B1 (ko) | 2012-03-21 |
KR20050119154A (ko) | 2005-12-20 |
WO2004089812A1 (ja) | 2004-10-21 |
US8268660B2 (en) | 2012-09-18 |
JP4333417B2 (ja) | 2009-09-16 |
TW200510241A (en) | 2005-03-16 |
TWI245020B (en) | 2005-12-11 |
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