JP2004311243A5 - - Google Patents
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- JP2004311243A5 JP2004311243A5 JP2003104161A JP2003104161A JP2004311243A5 JP 2004311243 A5 JP2004311243 A5 JP 2004311243A5 JP 2003104161 A JP2003104161 A JP 2003104161A JP 2003104161 A JP2003104161 A JP 2003104161A JP 2004311243 A5 JP2004311243 A5 JP 2004311243A5
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003104161A JP4219724B2 (ja) | 2003-04-08 | 2003-04-08 | 冷陰極発光素子の製造方法 |
| TW093105675A TWI257117B (en) | 2003-04-08 | 2004-03-04 | Cold cathode light emitting device, image display and method of manufacturing cold cathode light emitting device |
| US10/811,980 US7372193B2 (en) | 2003-04-08 | 2004-03-30 | Cold cathode light emitting device with nano-fiber structure layer, manufacturing method thereof and image display |
| KR1020040023775A KR100610984B1 (ko) | 2003-04-08 | 2004-04-07 | 냉음극 발광 소자 및 냉음극 발광 소자의 제조 방법 |
| CN2004100325230A CN1536609B (zh) | 2003-04-08 | 2004-04-08 | 冷阴极发光元件、图像显示装置及冷阴极发光元件的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003104161A JP4219724B2 (ja) | 2003-04-08 | 2003-04-08 | 冷陰極発光素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004311243A JP2004311243A (ja) | 2004-11-04 |
| JP2004311243A5 true JP2004311243A5 (ja) | 2006-05-25 |
| JP4219724B2 JP4219724B2 (ja) | 2009-02-04 |
Family
ID=33127781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003104161A Expired - Fee Related JP4219724B2 (ja) | 2003-04-08 | 2003-04-08 | 冷陰極発光素子の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7372193B2 (ja) |
| JP (1) | JP4219724B2 (ja) |
| KR (1) | KR100610984B1 (ja) |
| CN (1) | CN1536609B (ja) |
| TW (1) | TWI257117B (ja) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4763973B2 (ja) * | 2004-05-12 | 2011-08-31 | 日本放送協会 | 冷陰極素子及びその製造方法 |
| US20060292297A1 (en) * | 2004-07-06 | 2006-12-28 | Nano-Proprietary, Inc. | Patterning CNT emitters |
| KR20070043391A (ko) * | 2005-10-21 | 2007-04-25 | 삼성에스디아이 주식회사 | 전자 방출 디바이스, 이를 이용한 전자 방출 표시 디바이스및 이의 제조 방법 |
| KR20070046650A (ko) * | 2005-10-31 | 2007-05-03 | 삼성에스디아이 주식회사 | 전자 방출 디바이스 |
| KR20070083112A (ko) | 2006-02-20 | 2007-08-23 | 삼성에스디아이 주식회사 | 전자 방출 디바이스와 이를 이용한 전자 방출 표시디바이스 |
| JP2007311329A (ja) | 2006-05-19 | 2007-11-29 | Samsung Sdi Co Ltd | 発光装置、発光装置の電子放出ユニット製造方法、及び表示装置 |
| KR20080045016A (ko) * | 2006-11-17 | 2008-05-22 | 삼성에스디아이 주식회사 | 전자 방출 디바이스, 전자 방출 디바이스의 제조 방법, 및전자 방출 디바이스를 구비한 발광 장치 |
| TWI340985B (en) * | 2007-07-06 | 2011-04-21 | Chunghwa Picture Tubes Ltd | Field emission device array substrate and fabricating method thereof |
| JP4303308B2 (ja) * | 2007-11-20 | 2009-07-29 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、および電子放出素子の製造方法 |
| JP4314307B1 (ja) * | 2008-02-21 | 2009-08-12 | シャープ株式会社 | 熱交換装置 |
| US8299700B2 (en) | 2009-02-05 | 2012-10-30 | Sharp Kabushiki Kaisha | Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device |
| CN101814405B (zh) | 2009-02-24 | 2012-04-25 | 夏普株式会社 | 电子发射元件及其制造方法、使用电子发射元件的各装置 |
| JP2010225297A (ja) * | 2009-03-19 | 2010-10-07 | Futaba Corp | 冷陰極電子源の製造方法及び冷陰極電子源。 |
| JP4732533B2 (ja) * | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
| JP5073721B2 (ja) * | 2009-05-19 | 2012-11-14 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、電子放出素子の製造方法 |
| JP4732534B2 (ja) * | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
| CN101930884B (zh) * | 2009-06-25 | 2012-04-18 | 夏普株式会社 | 电子发射元件及其制造方法、电子发射装置、自发光设备、图像显示装置 |
| JP4880740B2 (ja) | 2009-12-01 | 2012-02-22 | シャープ株式会社 | 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
| KR20130101839A (ko) * | 2012-03-06 | 2013-09-16 | 삼성전자주식회사 | 엑스레이 소스 |
| US9064669B2 (en) * | 2013-07-15 | 2015-06-23 | National Defense University | Field emission cathode and field emission light using the same |
| CN103943441B (zh) * | 2014-05-10 | 2016-05-04 | 福州大学 | 一种场致发射激发气体放电显示装置及其驱动方法 |
| KR102568252B1 (ko) * | 2016-07-21 | 2023-08-22 | 삼성디스플레이 주식회사 | 발광 장치 및 그의 제조방법 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229331A (en) * | 1992-02-14 | 1993-07-20 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
| EP0700063A1 (en) | 1994-08-31 | 1996-03-06 | International Business Machines Corporation | Structure and method for fabricating of a field emission device |
| JP3070469B2 (ja) * | 1995-03-20 | 2000-07-31 | 日本電気株式会社 | 電界放射冷陰極およびその製造方法 |
| US5683282A (en) * | 1995-12-04 | 1997-11-04 | Industrial Technology Research Institute | Method for manufacturing flat cold cathode arrays |
| JP3171121B2 (ja) * | 1996-08-29 | 2001-05-28 | 双葉電子工業株式会社 | 電界放出型表示装置 |
| US5929560A (en) * | 1996-10-31 | 1999-07-27 | Motorola, Inc. | Field emission display having an ion shield |
| CN1251204A (zh) * | 1997-03-25 | 2000-04-19 | 纳幕尔杜邦公司 | 显示板的场致发射体阴极的背板结构 |
| FR2769751B1 (fr) * | 1997-10-14 | 1999-11-12 | Commissariat Energie Atomique | Source d'electrons a micropointes, a grille de focalisation et a densite elevee de micropointes, et ecran plat utilisant une telle source |
| TW403931B (en) * | 1998-01-16 | 2000-09-01 | Sony Corp | Electron emitting apparatus, manufacturing method therefor and method of operating electron emitting apparatus |
| US6211608B1 (en) * | 1998-06-11 | 2001-04-03 | Micron Technology, Inc. | Field emission device with buffer layer and method of making |
| US6369596B1 (en) * | 1999-08-04 | 2002-04-09 | Agere Systems Guardian Corp. | Vacuum-assisted integrated circuit test socket |
| US20020036452A1 (en) * | 1999-12-21 | 2002-03-28 | Masakazu Muroyama | Electron emission device, cold cathode field emission device and method for the production thereof, and cold cathode field emission display and method for the production thereof |
| KR100316780B1 (ko) * | 2000-02-15 | 2001-12-12 | 김순택 | 격벽 리브를 이용한 3극관 탄소나노튜브 전계 방출 소자및 그 제작 방법 |
| EP1134771B1 (en) * | 2000-03-16 | 2009-08-05 | Hitachi, Ltd. | Apparatus for producing a flux of charge carriers |
| JP2001266735A (ja) * | 2000-03-22 | 2001-09-28 | Lg Electronics Inc | 電界放出型冷陰極構造及びこの陰極を備えた電子銃 |
| JP3639808B2 (ja) * | 2000-09-01 | 2005-04-20 | キヤノン株式会社 | 電子放出素子及び電子源及び画像形成装置及び電子放出素子の製造方法 |
| JP2002110073A (ja) | 2000-09-28 | 2002-04-12 | Hitachi Ltd | 平面表示装置 |
| JP3774682B2 (ja) | 2001-06-29 | 2006-05-17 | キヤノン株式会社 | 電子放出素子、電子源および画像形成装置 |
| WO2003063120A1 (en) * | 2002-01-15 | 2003-07-31 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Method and apparatus for regulating electron emission in field emitter devices |
| US6835947B2 (en) * | 2002-01-31 | 2004-12-28 | Hewlett-Packard Development Company, L.P. | Emitter and method of making |
| KR100519754B1 (ko) * | 2003-01-13 | 2005-10-07 | 삼성에스디아이 주식회사 | 이중 게이트 구조를 가진 전계방출소자 및 그 제조방법 |
-
2003
- 2003-04-08 JP JP2003104161A patent/JP4219724B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-04 TW TW093105675A patent/TWI257117B/zh active
- 2004-03-30 US US10/811,980 patent/US7372193B2/en not_active Expired - Fee Related
- 2004-04-07 KR KR1020040023775A patent/KR100610984B1/ko not_active IP Right Cessation
- 2004-04-08 CN CN2004100325230A patent/CN1536609B/zh not_active Expired - Fee Related