JP2004300576A - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- JP2004300576A JP2004300576A JP2004075363A JP2004075363A JP2004300576A JP 2004300576 A JP2004300576 A JP 2004300576A JP 2004075363 A JP2004075363 A JP 2004075363A JP 2004075363 A JP2004075363 A JP 2004075363A JP 2004300576 A JP2004300576 A JP 2004300576A
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- Prior art keywords
- substrate
- plating
- pretreatment
- substrate processing
- processing method
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- 239000000758 substrate Substances 0.000 title claims abstract description 402
- 238000000034 method Methods 0.000 title claims description 69
- 238000007747 plating Methods 0.000 claims abstract description 161
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 238000007772 electroless plating Methods 0.000 claims abstract description 58
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 46
- 239000000956 alloy Substances 0.000 claims abstract description 46
- 238000002203 pretreatment Methods 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims description 139
- 238000012545 processing Methods 0.000 claims description 83
- 239000000243 solution Substances 0.000 claims description 78
- 238000004140 cleaning Methods 0.000 claims description 60
- 230000008569 process Effects 0.000 claims description 59
- 238000003672 processing method Methods 0.000 claims description 40
- 239000003054 catalyst Substances 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 21
- 238000007781 pre-processing Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 13
- 238000002156 mixing Methods 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- 230000003197 catalytic effect Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 238000012805 post-processing Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims description 2
- 238000005868 electrolysis reaction Methods 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract description 8
- 238000009434 installation Methods 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 27
- 239000010949 copper Substances 0.000 description 27
- 239000007921 spray Substances 0.000 description 13
- 238000012546 transfer Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
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- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
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- 238000007726 management method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 101150003085 Pdcl gene Proteins 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000012487 rinsing solution Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910020674 Co—B Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- HIJDQYZZPATXAO-UHFFFAOYSA-N palladium hydrochloride Chemical compound Cl.[Pd] HIJDQYZZPATXAO-UHFFFAOYSA-N 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004075363A JP2004300576A (ja) | 2003-03-20 | 2004-03-16 | 基板処理方法及び基板処理装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003078485 | 2003-03-20 | ||
| JP2004075363A JP2004300576A (ja) | 2003-03-20 | 2004-03-16 | 基板処理方法及び基板処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007028541A Division JP2007126756A (ja) | 2003-03-20 | 2007-02-07 | 無電解めっき装置及び無電解めっき方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004300576A true JP2004300576A (ja) | 2004-10-28 |
| JP2004300576A5 JP2004300576A5 (enExample) | 2006-07-20 |
Family
ID=33421955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004075363A Withdrawn JP2004300576A (ja) | 2003-03-20 | 2004-03-16 | 基板処理方法及び基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004300576A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005105322A1 (ja) * | 2004-04-28 | 2005-11-10 | Ebara Corporation | 基板処理ユニット及び基板処理装置 |
| WO2006095881A1 (ja) * | 2005-03-07 | 2006-09-14 | Ebara Corporation | 基板処理方法及び基板処理装置 |
| WO2007111127A1 (ja) * | 2006-03-27 | 2007-10-04 | Tokyo Electron Limited | 基板処理方法、半導体装置の製造方法、基板処理装置、および記録媒体 |
| JP2008038215A (ja) * | 2006-08-08 | 2008-02-21 | Ebara Corp | 基板処理方法及び基板処理装置 |
| JP2011519393A (ja) * | 2008-03-28 | 2011-07-07 | ラム リサーチ コーポレーション | 基板洗浄及び無電解析出のプロセス及び溶液 |
| TWI645915B (zh) * | 2016-11-10 | 2019-01-01 | 辛耘企業股份有限公司 | 基板溼處理裝置 |
| CN111180369A (zh) * | 2020-02-20 | 2020-05-19 | 天津中环领先材料技术有限公司 | 一种半导体抛光片清洗设备及清洗方法 |
| JP2022063026A (ja) * | 2020-10-09 | 2022-04-21 | 株式会社荏原製作所 | めっき方法 |
| WO2024004682A1 (ja) * | 2022-06-28 | 2024-01-04 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置 |
-
2004
- 2004-03-16 JP JP2004075363A patent/JP2004300576A/ja not_active Withdrawn
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7368016B2 (en) | 2004-04-28 | 2008-05-06 | Ebara Corporation | Substrate processing unit and substrate processing apparatus |
| WO2005105322A1 (ja) * | 2004-04-28 | 2005-11-10 | Ebara Corporation | 基板処理ユニット及び基板処理装置 |
| US7735450B2 (en) | 2004-04-28 | 2010-06-15 | Ebara Corporation | Substrate holding apparatus |
| JPWO2005105322A1 (ja) * | 2004-04-28 | 2008-03-13 | 株式会社荏原製作所 | 基板処理ユニット及び基板処理装置 |
| WO2006095881A1 (ja) * | 2005-03-07 | 2006-09-14 | Ebara Corporation | 基板処理方法及び基板処理装置 |
| KR101061675B1 (ko) * | 2006-03-27 | 2011-09-01 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 기록 매체 |
| WO2007111127A1 (ja) * | 2006-03-27 | 2007-10-04 | Tokyo Electron Limited | 基板処理方法、半導体装置の製造方法、基板処理装置、および記録媒体 |
| US8138095B2 (en) | 2006-03-27 | 2012-03-20 | Tokyo Electron Limited | Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium |
| JP2008038215A (ja) * | 2006-08-08 | 2008-02-21 | Ebara Corp | 基板処理方法及び基板処理装置 |
| JP2011519393A (ja) * | 2008-03-28 | 2011-07-07 | ラム リサーチ コーポレーション | 基板洗浄及び無電解析出のプロセス及び溶液 |
| JP2013243376A (ja) * | 2008-03-28 | 2013-12-05 | Lam Research Corporation | 基板の洗浄溶液 |
| US9048088B2 (en) | 2008-03-28 | 2015-06-02 | Lam Research Corporation | Processes and solutions for substrate cleaning and electroless deposition |
| TWI645915B (zh) * | 2016-11-10 | 2019-01-01 | 辛耘企業股份有限公司 | 基板溼處理裝置 |
| CN111180369A (zh) * | 2020-02-20 | 2020-05-19 | 天津中环领先材料技术有限公司 | 一种半导体抛光片清洗设备及清洗方法 |
| JP2022063026A (ja) * | 2020-10-09 | 2022-04-21 | 株式会社荏原製作所 | めっき方法 |
| JP7542391B2 (ja) | 2020-10-09 | 2024-08-30 | 株式会社荏原製作所 | めっき方法 |
| WO2024004682A1 (ja) * | 2022-06-28 | 2024-01-04 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置 |
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