JP2004288347A5 - - Google Patents

Download PDF

Info

Publication number
JP2004288347A5
JP2004288347A5 JP2003314052A JP2003314052A JP2004288347A5 JP 2004288347 A5 JP2004288347 A5 JP 2004288347A5 JP 2003314052 A JP2003314052 A JP 2003314052A JP 2003314052 A JP2003314052 A JP 2003314052A JP 2004288347 A5 JP2004288347 A5 JP 2004288347A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003314052A
Other versions
JP2004288347A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003314052A priority Critical patent/JP2004288347A/ja
Priority claimed from JP2003314052A external-priority patent/JP2004288347A/ja
Priority to US10/768,036 priority patent/US6917558B2/en
Publication of JP2004288347A publication Critical patent/JP2004288347A/ja
Publication of JP2004288347A5 publication Critical patent/JP2004288347A5/ja
Pending legal-status Critical Current

Links

JP2003314052A 2003-03-03 2003-09-05 連想メモリ Pending JP2004288347A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003314052A JP2004288347A (ja) 2003-03-03 2003-09-05 連想メモリ
US10/768,036 US6917558B2 (en) 2003-03-03 2004-02-02 Content addressable memory with redundant repair function

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003056100 2003-03-03
JP2003314052A JP2004288347A (ja) 2003-03-03 2003-09-05 連想メモリ

Publications (2)

Publication Number Publication Date
JP2004288347A JP2004288347A (ja) 2004-10-14
JP2004288347A5 true JP2004288347A5 (ja) 2006-10-05

Family

ID=32929682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003314052A Pending JP2004288347A (ja) 2003-03-03 2003-09-05 連想メモリ

Country Status (2)

Country Link
US (1) US6917558B2 (ja)
JP (1) JP2004288347A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4861012B2 (ja) * 2005-03-31 2012-01-25 ルネサスエレクトロニクス株式会社 Cam装置
JP2006331571A (ja) 2005-05-27 2006-12-07 Matsushita Electric Ind Co Ltd 半導体装置
US7375999B2 (en) * 2005-09-29 2008-05-20 Infineon Technologies Ag Low equalized sense-amp for twin cell DRAMs
JP2008257835A (ja) * 2007-03-13 2008-10-23 Renesas Technology Corp 半導体装置
US7848130B1 (en) * 2008-12-19 2010-12-07 Suvolta, Inc. Method and apparatus for improving SRAM write operations
US9287004B2 (en) 2011-11-07 2016-03-15 Samsung Electronics Co., Ltd. Semiconductor memory device and system having redundancy cells
JP6592310B2 (ja) * 2015-09-01 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置
US10714181B2 (en) 2016-11-30 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell
CN113892138A (zh) 2021-03-24 2022-01-04 长江存储科技有限责任公司 具有使用冗余库的故障主库修复的存储器器件
WO2022198491A1 (en) * 2021-03-24 2022-09-29 Yangtze Memory Technologies Co., Ltd. Memory device with failed main bank repair using redundant bank

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03276495A (ja) * 1990-03-27 1991-12-06 Nippon Telegr & Teleph Corp <Ntt> 連想メモリ装置
JP2863619B2 (ja) * 1990-10-03 1999-03-03 株式会社東芝 半導体メモリ
JPH05128844A (ja) * 1991-11-01 1993-05-25 Mitsubishi Electric Corp 半導体記憶装置
JP2636159B2 (ja) * 1994-01-07 1997-07-30 ハル・コンピュータ・システムズ,インコーポレイテッド 連想メモリセルに「ドントケア」を記憶するための装置
JP2751821B2 (ja) * 1994-02-16 1998-05-18 日本電気株式会社 不揮発性半導体記憶装置
JP3602172B2 (ja) * 1994-11-16 2004-12-15 川崎マイクロエレクトロニクス株式会社 半導体集積回路
JP3816560B2 (ja) * 1995-12-25 2006-08-30 株式会社ルネサステクノロジ 連想メモリ回路のテスト方法及び連想メモリ回路のテスト回路
JPH09251796A (ja) * 1996-03-15 1997-09-22 Fujitsu Ltd 半導体記憶装置及び半導体集積回路装置
US6042241A (en) * 1997-07-31 2000-03-28 Litton Systems, Inc. Backlight with integral illumination source
US6441811B1 (en) * 1997-10-29 2002-08-27 Sharp Kabushiki Kaisha Display control device and reproduction display device for electronic books
US6034891A (en) * 1997-12-01 2000-03-07 Micron Technology, Inc. Multi-state flash memory defect management
JP3478749B2 (ja) * 1999-02-05 2003-12-15 インターナショナル・ビジネス・マシーンズ・コーポレーション 連想メモリ(cam)のワードマッチラインのプリチャージ回路および方法
JP3814464B2 (ja) * 2000-06-09 2006-08-30 株式会社東芝 半導体メモリ集積回路
JP2002260389A (ja) * 2001-03-01 2002-09-13 Kawasaki Microelectronics Kk 連想メモリ
JP2004071093A (ja) * 2002-08-08 2004-03-04 Fujitsu Ltd 出荷試験が簡単で消費電力を削減した冗長メモリセルアレイ付きメモリ回路
JP4012474B2 (ja) * 2003-02-18 2007-11-21 富士通株式会社 シフト冗長回路、シフト冗長回路の制御方法及び半導体記憶装置

Similar Documents

Publication Publication Date Title
BE2014C055I2 (ja)
BE2014C027I2 (ja)
BE2014C003I2 (ja)
BE2013C075I2 (ja)
BE2013C070I2 (ja)
BE2013C067I2 (ja)
BE2013C038I2 (ja)
BE2013C034I2 (ja)
JP2004129191A5 (ja)
JP2004220450A5 (ja)
IN2005KO02345A (ja)
JP2003322656A5 (ja)
BE2015C005I2 (ja)
JP2003317186A5 (ja)
JP2004209847A5 (ja)
JP2004088093A5 (ja)
JP2004288347A5 (ja)
JP2004005398A5 (ja)
JP2003260867A5 (ja)
JP2003265814A5 (ja)
JP2004147287A5 (ja)
JP2004006734A5 (ja)
DZ3505A1 (ja)
AU2002253451A1 (ja)
AU2002324323A1 (ja)