JP2004274077A - 半導体集積回路装置およびその製造方法 - Google Patents
半導体集積回路装置およびその製造方法 Download PDFInfo
- Publication number
- JP2004274077A JP2004274077A JP2004144257A JP2004144257A JP2004274077A JP 2004274077 A JP2004274077 A JP 2004274077A JP 2004144257 A JP2004144257 A JP 2004144257A JP 2004144257 A JP2004144257 A JP 2004144257A JP 2004274077 A JP2004274077 A JP 2004274077A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- pair
- integrated circuit
- semiconductor integrated
- misfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 70
- 239000010410 layer Substances 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 46
- 239000003990 capacitor Substances 0.000 claims description 36
- 239000011229 interlayer Substances 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 65
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 65
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 65
- 230000005669 field effect Effects 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000003068 static effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 68
- 238000003860 storage Methods 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 16
- 239000012535 impurity Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 101150110971 CIN7 gene Proteins 0.000 description 5
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 5
- 101150110298 INV1 gene Proteins 0.000 description 5
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 5
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910019001 CoSi Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004144257A JP2004274077A (ja) | 2001-01-30 | 2004-05-14 | 半導体集積回路装置およびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001022132 | 2001-01-30 | ||
| JP2004144257A JP2004274077A (ja) | 2001-01-30 | 2004-05-14 | 半導体集積回路装置およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002561287A Division JP4056392B2 (ja) | 2001-01-30 | 2001-12-26 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004274077A true JP2004274077A (ja) | 2004-09-30 |
| JP2004274077A5 JP2004274077A5 (enExample) | 2005-06-30 |
Family
ID=33133411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004144257A Pending JP2004274077A (ja) | 2001-01-30 | 2004-05-14 | 半導体集積回路装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004274077A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008072044A (ja) * | 2006-09-15 | 2008-03-27 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP2008311457A (ja) * | 2007-06-15 | 2008-12-25 | Renesas Technology Corp | 半導体装置の製造方法 |
-
2004
- 2004-05-14 JP JP2004144257A patent/JP2004274077A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008072044A (ja) * | 2006-09-15 | 2008-03-27 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP2008311457A (ja) * | 2007-06-15 | 2008-12-25 | Renesas Technology Corp | 半導体装置の製造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4056392B2 (ja) | 半導体集積回路装置 | |
| JP4044721B2 (ja) | 半導体集積回路装置の製造方法 | |
| US6870231B2 (en) | Layouts for CMOS SRAM cells and devices | |
| JP4083397B2 (ja) | 半導体集積回路装置 | |
| CN100420011C (zh) | 集成电路的内连线结构以及静态随机存取存储单元 | |
| JP2002329798A (ja) | 半導体装置 | |
| US7045864B2 (en) | Semiconductor integrated circuit device | |
| JP2689923B2 (ja) | 半導体装置およびその製造方法 | |
| US20090152641A1 (en) | Semiconductor memory device and method for manufacturing | |
| JP4535506B2 (ja) | 半導体集積回路装置の製造方法 | |
| JP2004274077A (ja) | 半導体集積回路装置およびその製造方法 | |
| JP2004241403A (ja) | 半導体集積回路装置の製造方法 | |
| JP4231212B2 (ja) | 半導体集積回路装置およびその製造方法 | |
| JP2006004959A (ja) | 半導体装置およびその製造方法 | |
| JP4083770B2 (ja) | 半導体集積回路装置の製造方法 | |
| JP3839418B2 (ja) | 半導体集積回路装置の製造方法 | |
| JP2002289702A (ja) | 半導体集積回路装置の製造方法および半導体集積回路装置 | |
| KR101036158B1 (ko) | Ｓｒａｍ 및 로직 복합 소자의 제조 방법 | |
| JP2004146844A (ja) | 半導体集積回路装置の製造方法 | |
| JP2004288951A (ja) | 半導体集積回路装置およびその製造方法 | |
| JP2008085350A (ja) | 半導体集積回路装置の製造方法および半導体集積回路装置 | |
| JPH1079440A (ja) | 半導体集積回路装置およびその製造方法 | |
| JP2009044183A (ja) | 半導体集積回路装置およびその製造方法 | |
| KR20060072253A (ko) | 씨모스 트랜지스터를 채택하는 반도체 소자들 및 그제조방법들 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041221 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041221 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080826 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20081224 |