JP2004274040A - 発光ダイオードの製作方法 - Google Patents

発光ダイオードの製作方法 Download PDF

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Publication number
JP2004274040A
JP2004274040A JP2004039760A JP2004039760A JP2004274040A JP 2004274040 A JP2004274040 A JP 2004274040A JP 2004039760 A JP2004039760 A JP 2004039760A JP 2004039760 A JP2004039760 A JP 2004039760A JP 2004274040 A JP2004274040 A JP 2004274040A
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JP
Japan
Prior art keywords
light
wavelength
medium
led
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004039760A
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English (en)
Japanese (ja)
Other versions
JP2004274040A5 (enExample
Inventor
Kheng Leng Tan
レン タン ケン
Abdul Karim Aizar
カリム アジール アブドゥル
Su Lin Oon
リン ウーン スー
Boon Chun Tan
チュン タン ブーン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32908216&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2004274040(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2004274040A publication Critical patent/JP2004274040A/ja
Publication of JP2004274040A5 publication Critical patent/JP2004274040A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Landscapes

  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2004039760A 2003-03-07 2004-02-17 発光ダイオードの製作方法 Withdrawn JP2004274040A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/383,443 US6806658B2 (en) 2003-03-07 2003-03-07 Method for making an LED

Publications (2)

Publication Number Publication Date
JP2004274040A true JP2004274040A (ja) 2004-09-30
JP2004274040A5 JP2004274040A5 (enExample) 2007-04-05

Family

ID=32908216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004039760A Withdrawn JP2004274040A (ja) 2003-03-07 2004-02-17 発光ダイオードの製作方法

Country Status (3)

Country Link
US (1) US6806658B2 (enExample)
JP (1) JP2004274040A (enExample)
DE (1) DE102004006513A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009096947A (ja) * 2007-10-19 2009-05-07 Mitsubishi Chemicals Corp 蛍光体含有組成物の製造方法
US7663307B2 (en) 2005-07-15 2010-02-16 Kabushiki Kaisha Toshiba Light-emitting device

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6922024B2 (en) * 2002-11-25 2005-07-26 Matsushita Electric Industrial Co., Ltd. LED lamp
US7128442B2 (en) * 2003-05-09 2006-10-31 Kian Shin Lee Illumination unit with a solid-state light generating source, a flexible substrate, and a flexible and optically transparent encapsulant
US20050077535A1 (en) * 2003-10-08 2005-04-14 Joinscan Electronics Co., Ltd LED and its manufacturing process
US6933535B2 (en) * 2003-10-31 2005-08-23 Lumileds Lighting U.S., Llc Light emitting devices with enhanced luminous efficiency
TW200522387A (en) * 2003-12-26 2005-07-01 Ind Tech Res Inst High-power LED planarization encapsulation structure
US20070045777A1 (en) * 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
US20060082297A1 (en) * 2004-10-19 2006-04-20 Eastman Kodak Company Method of preparing a lens-less LED
US7192795B2 (en) * 2004-11-18 2007-03-20 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7314770B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7115428B2 (en) * 2005-03-07 2006-10-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method for fabricating light-emitting devices utilizing a photo-curable epoxy
US20060226772A1 (en) * 2005-04-06 2006-10-12 Tan Kheng L Increased light output light emitting device using multiple phosphors
CN1848463A (zh) * 2005-04-15 2006-10-18 南京汉德森科技股份有限公司 基于金属线路板的led白光光源
US20070092737A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20070092736A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7595515B2 (en) 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
CN101297411B (zh) * 2005-10-24 2010-05-19 3M创新有限公司 发光器件的制造方法及发光器件
US20070128745A1 (en) * 2005-12-01 2007-06-07 Brukilacchio Thomas J Phosphor deposition method and apparatus for making light emitting diodes
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
US7655486B2 (en) * 2006-05-17 2010-02-02 3M Innovative Properties Company Method of making light emitting device with multilayer silicon-containing encapsulant
US8092735B2 (en) 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
US20090159915A1 (en) * 2007-12-19 2009-06-25 Shaul Branchevsky Led insert module and multi-layer lens

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19952932C1 (de) * 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit breitbandiger Anregung
US6635363B1 (en) * 2000-08-21 2003-10-21 General Electric Company Phosphor coating with self-adjusting distance from LED chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663307B2 (en) 2005-07-15 2010-02-16 Kabushiki Kaisha Toshiba Light-emitting device
JP2009096947A (ja) * 2007-10-19 2009-05-07 Mitsubishi Chemicals Corp 蛍光体含有組成物の製造方法

Also Published As

Publication number Publication date
DE102004006513A1 (de) 2004-09-23
US20040183471A1 (en) 2004-09-23
US6806658B2 (en) 2004-10-19

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