JP2004266112A5 - - Google Patents

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Publication number
JP2004266112A5
JP2004266112A5 JP2003055286A JP2003055286A JP2004266112A5 JP 2004266112 A5 JP2004266112 A5 JP 2004266112A5 JP 2003055286 A JP2003055286 A JP 2003055286A JP 2003055286 A JP2003055286 A JP 2003055286A JP 2004266112 A5 JP2004266112 A5 JP 2004266112A5
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JP
Japan
Prior art keywords
distance
target
substrate
collimator
sputtered
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JP2003055286A
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JP2004266112A (ja
JP4497447B2 (ja
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Priority claimed from JP2003055286A external-priority patent/JP4497447B2/ja
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Publication of JP2004266112A5 publication Critical patent/JP2004266112A5/ja
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Publication of JP4497447B2 publication Critical patent/JP4497447B2/ja
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なお、上記したスパッタ粒子の略垂直入射は、その一例として、ターゲットと基板との距離を、用いるウェハ直径を上回る離間距離に設定し、且つ、スパッタされた粒子の平均自由工程がこの離間距離を上回るような真空度を用いてスパッタ成膜することで実現できる。また、基板とターゲットの間にコリメータを挿入する場合もあるが、この方法は、コリメータそのものがスパッタされ、ダストの発生源ともなるので注意が必要である。
JP2003055286A 2003-03-03 2003-03-03 パルス状直流スパッタ成膜方法及び該方法のための成膜装置 Expired - Lifetime JP4497447B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003055286A JP4497447B2 (ja) 2003-03-03 2003-03-03 パルス状直流スパッタ成膜方法及び該方法のための成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003055286A JP4497447B2 (ja) 2003-03-03 2003-03-03 パルス状直流スパッタ成膜方法及び該方法のための成膜装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009165987A Division JP4613243B2 (ja) 2009-07-14 2009-07-14 パルス状直流スパッタ成膜方法及び該方法のための成膜装置

Publications (3)

Publication Number Publication Date
JP2004266112A JP2004266112A (ja) 2004-09-24
JP2004266112A5 true JP2004266112A5 (ja) 2006-03-09
JP4497447B2 JP4497447B2 (ja) 2010-07-07

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ID=33119338

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JP2003055286A Expired - Lifetime JP4497447B2 (ja) 2003-03-03 2003-03-03 パルス状直流スパッタ成膜方法及び該方法のための成膜装置

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JP (1) JP4497447B2 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007308727A (ja) * 2006-05-16 2007-11-29 Bridgestone Corp 結晶性薄膜の成膜方法
WO2008071732A2 (en) * 2006-12-12 2008-06-19 Oc Oerlikon Balzers Ag Rf substrate bias with high power impulse magnetron sputtering (hipims)
JP5058642B2 (ja) * 2007-03-26 2012-10-24 財団法人神奈川科学技術アカデミー 半導体基板の製造方法
EP2268844B1 (en) 2008-04-03 2020-11-25 Evatec AG Apparatus for sputtering and a method of fabricating a metallization structure
JP6329839B2 (ja) 2014-07-29 2018-05-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN106811726A (zh) * 2015-11-30 2017-06-09 北京北方微电子基地设备工艺研究中心有限责任公司 溅射沉积工艺及溅射沉积设备
JPWO2018186038A1 (ja) * 2017-04-03 2019-04-18 株式会社アルバック 成膜装置及び成膜方法
CN117418208A (zh) * 2023-08-10 2024-01-19 等离子体装备科技(广州)有限公司 连接器镀膜方法及其制备工艺

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684539B2 (ja) * 1984-12-25 1994-10-26 日電アネルバ株式会社 スパッタリングによる薄膜形成方法
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
JP2598062B2 (ja) * 1988-01-29 1997-04-09 株式会社日立製作所 基板バイアス方式のマグネトロンスパッタリング方法及びその装置
US6193855B1 (en) * 1999-10-19 2001-02-27 Applied Materials, Inc. Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage

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