JP2004228561A5 - - Google Patents

Download PDF

Info

Publication number
JP2004228561A5
JP2004228561A5 JP2003415801A JP2003415801A JP2004228561A5 JP 2004228561 A5 JP2004228561 A5 JP 2004228561A5 JP 2003415801 A JP2003415801 A JP 2003415801A JP 2003415801 A JP2003415801 A JP 2003415801A JP 2004228561 A5 JP2004228561 A5 JP 2004228561A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003415801A
Other versions
JP2004228561A (ja
JP4651075B2 (ja
Filing date
Publication date
Priority claimed from US10/350,643 external-priority patent/US6875651B2/en
Application filed filed Critical
Publication of JP2004228561A publication Critical patent/JP2004228561A/ja
Publication of JP2004228561A5 publication Critical patent/JP2004228561A5/ja
Application granted granted Critical
Publication of JP4651075B2 publication Critical patent/JP4651075B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

JP2003415801A 2003-01-23 2003-12-12 デュアルトレンチで隔離されたクロスポイントメモリアレイとその製造方法 Expired - Fee Related JP4651075B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/350,643 US6875651B2 (en) 2003-01-23 2003-01-23 Dual-trench isolated crosspoint memory array and method for fabricating same

Publications (3)

Publication Number Publication Date
JP2004228561A JP2004228561A (ja) 2004-08-12
JP2004228561A5 true JP2004228561A5 (ja) 2005-05-26
JP4651075B2 JP4651075B2 (ja) 2011-03-16

Family

ID=32594948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003415801A Expired - Fee Related JP4651075B2 (ja) 2003-01-23 2003-12-12 デュアルトレンチで隔離されたクロスポイントメモリアレイとその製造方法

Country Status (7)

Country Link
US (2) US6875651B2 (ja)
EP (1) EP1441391B1 (ja)
JP (1) JP4651075B2 (ja)
KR (1) KR100580901B1 (ja)
CN (1) CN1303665C (ja)
DE (1) DE60324888D1 (ja)
TW (1) TWI239591B (ja)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6962648B2 (en) * 2003-09-15 2005-11-08 Global Silicon Net Corp. Back-biased face target sputtering
JP2006049772A (ja) * 2004-08-09 2006-02-16 Nec Electronics Corp 半導体記憶装置及びその製造方法
KR101031398B1 (ko) * 2004-08-27 2011-04-25 주식회사 하이닉스반도체 반도체 소자 및 그 소자의 형성 방법
US20060081466A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima High uniformity 1-D multiple magnet magnetron source
US7425504B2 (en) * 2004-10-15 2008-09-16 4D-S Pty Ltd. Systems and methods for plasma etching
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
KR100593750B1 (ko) * 2004-11-10 2006-06-28 삼성전자주식회사 이성분계 금속 산화막을 데이터 저장 물질막으로 채택하는교차점 비휘발성 기억소자 및 그 제조방법
JP4880894B2 (ja) * 2004-11-17 2012-02-22 シャープ株式会社 半導体記憶装置の構造及びその製造方法
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US20070084717A1 (en) * 2005-10-16 2007-04-19 Makoto Nagashima Back-biased face target sputtering based high density non-volatile caching data storage
US20070084716A1 (en) * 2005-10-16 2007-04-19 Makoto Nagashima Back-biased face target sputtering based high density non-volatile data storage
KR100723419B1 (ko) * 2006-02-17 2007-05-30 삼성전자주식회사 불휘발성 메모리소자 및 그 동작방법
US8395199B2 (en) 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
KR100785509B1 (ko) * 2006-06-19 2007-12-13 한양대학교 산학협력단 ＲｅＲＡＭ 소자 및 그 제조 방법
US20080011603A1 (en) * 2006-07-14 2008-01-17 Makoto Nagashima Ultra high vacuum deposition of PCMO material
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
TWI299162B (en) * 2006-07-18 2008-07-21 Ind Tech Res Inst Sensing memory device
TWI328871B (en) * 2006-09-04 2010-08-11 Ind Tech Res Inst Resistance type memory device
US8308915B2 (en) 2006-09-14 2012-11-13 4D-S Pty Ltd. Systems and methods for magnetron deposition
KR100780964B1 (ko) * 2006-11-13 2007-12-03 삼성전자주식회사 셀 다이오드를 구비하는 상변화 메모리 소자 및 그의제조방법
JP4137994B2 (ja) * 2006-11-20 2008-08-20 松下電器産業株式会社 不揮発性記憶素子、不揮発性記憶素子アレイおよびその製造方法
KR100791008B1 (ko) * 2006-12-26 2008-01-04 삼성전자주식회사 서로 인접하는 셀들에 공유된 상변화 물질 패턴을 구비하는상변화 메모리 소자 및 이를 구비하는 전자제품
US8513637B2 (en) * 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
US8154005B2 (en) * 2008-06-13 2012-04-10 Sandisk 3D Llc Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
KR20100070557A (ko) * 2008-12-18 2010-06-28 주식회사 동부하이텍 반도체 소자의 제조 방법
US8357601B2 (en) 2010-02-09 2013-01-22 Micron Technology, Inc. Cross-hair cell wordline formation
US20120012897A1 (en) * 2010-07-16 2012-01-19 Unity Semiconductor Corporation Vertically Fabricated BEOL Non-Volatile Two-Terminal Cross-Trench Memory Array with Two-Terminal Memory Elements and Method of Fabricating the Same
US8377718B2 (en) 2010-11-10 2013-02-19 Micron Technology, Inc. Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO
CN102201359B (zh) * 2011-05-27 2015-04-01 上海华虹宏力半导体制造有限公司 双沟槽隔离结构的形成方法
JP5671413B2 (ja) * 2011-06-07 2015-02-18 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその製造方法
CN102254854B (zh) * 2011-08-01 2016-06-01 上海华虹宏力半导体制造有限公司 双沟槽隔离结构的形成方法
CN102280404B (zh) * 2011-08-01 2016-06-29 上海华虹宏力半导体制造有限公司 双沟槽隔离结构的形成方法
US8610099B2 (en) 2011-08-15 2013-12-17 Unity Semiconductor Corporation Planar resistive memory integration
US9806129B2 (en) 2014-02-25 2017-10-31 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
US11223014B2 (en) 2014-02-25 2022-01-11 Micron Technology, Inc. Semiconductor structures including liners comprising alucone and related methods
US9577010B2 (en) 2014-02-25 2017-02-21 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
US9484196B2 (en) 2014-02-25 2016-11-01 Micron Technology, Inc. Semiconductor structures including liners comprising alucone and related methods
US10249819B2 (en) 2014-04-03 2019-04-02 Micron Technology, Inc. Methods of forming semiconductor structures including multi-portion liners
US9768378B2 (en) 2014-08-25 2017-09-19 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
US9748311B2 (en) 2014-11-07 2017-08-29 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
TWI572074B (zh) * 2015-02-04 2017-02-21 力晶科技股份有限公司 電阻式隨機存取記憶體及其製造方法
KR102511693B1 (ko) * 2016-03-22 2023-03-20 삼성전자주식회사 반도체 메모리 소자 및 이의 제조 방법
US11495293B2 (en) * 2020-02-04 2022-11-08 Micron Technology, Inc. Configurable resistivity for lines in a memory device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721856A (en) * 1980-07-15 1982-02-04 Nec Corp Semiconductor memory cell
US4818717A (en) * 1986-06-27 1989-04-04 Energy Conversion Devices, Inc. Method for making electronic matrix arrays
US4896293A (en) * 1988-06-09 1990-01-23 Texas Instruments Incorporated Dynamic ram cell with isolated trench capacitors
US5238855A (en) * 1988-11-10 1993-08-24 Texas Instruments Incorporated Cross-point contact-free array with a high-density floating-gate structure
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5629889A (en) * 1995-12-14 1997-05-13 Nec Research Institute, Inc. Superconducting fault-tolerant programmable memory cell incorporating Josephson junctions
US6653733B1 (en) * 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US5874760A (en) * 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
KR100268419B1 (ko) * 1998-08-14 2000-10-16 윤종용 고집적 반도체 메모리 장치 및 그의 제조 방법
JP2000206220A (ja) * 1999-01-11 2000-07-28 Mitsubishi Electric Corp 磁界検出素子
JP2002280528A (ja) * 1999-05-14 2002-09-27 Toshiba Corp 半導体装置及びその製造方法
JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
JP3839239B2 (ja) * 2000-10-05 2006-11-01 株式会社ルネサステクノロジ 半導体集積回路装置
US6437383B1 (en) * 2000-12-21 2002-08-20 Intel Corporation Dual trench isolation for a phase-change memory cell and method of making same
US6747286B2 (en) * 2001-06-30 2004-06-08 Ovonyx, Inc. Pore structure for programmable device
WO2004017437A1 (en) * 2002-08-14 2004-02-26 Ovonyx, Inc. Modified contact for programmable devices
US6746910B2 (en) * 2002-09-30 2004-06-08 Sharp Laboratories Of America, Inc. Method of fabricating self-aligned cross-point memory array

Similar Documents

Publication Publication Date Title
BE2015C007I2 (ja)
BE2014C055I2 (ja)
BE2014C027I2 (ja)
BE2014C003I2 (ja)
BE2013C075I2 (ja)
BE2013C070I2 (ja)
BE2013C067I2 (ja)
BE2013C038I2 (ja)
BE2013C036I2 (ja)
BE2011C030I2 (ja)
DE602004028019D1 (ja)
JP2003338833A5 (ja)
JP2004228561A5 (ja)
BE2015C005I2 (ja)
BE2012C053I2 (ja)
JP2004213641A5 (ja)
JP2003255077A5 (ja)
JP2004052755A5 (ja)
JP2004228327A5 (ja)
JP2003274334A5 (ja)
JP2004220662A5 (ja)
JP2003326688A5 (ja)
JP2004204848A5 (ja)
BE2015C024I2 (ja)
AU2001282632A1 (ja)