JP2004224692A - 結晶成長方法 - Google Patents

結晶成長方法 Download PDF

Info

Publication number
JP2004224692A
JP2004224692A JP2004016598A JP2004016598A JP2004224692A JP 2004224692 A JP2004224692 A JP 2004224692A JP 2004016598 A JP2004016598 A JP 2004016598A JP 2004016598 A JP2004016598 A JP 2004016598A JP 2004224692 A JP2004224692 A JP 2004224692A
Authority
JP
Japan
Prior art keywords
temperature
fluoride
crystal
less
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004016598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004224692A5 (enExample
Inventor
Qiao Li
リ キアオ
William Rogers Rosch
ロジャース ロッシュ ウィリアム
Paul Maynard Schermerhorn
メイナード シャーマーホーン ポール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of JP2004224692A publication Critical patent/JP2004224692A/ja
Publication of JP2004224692A5 publication Critical patent/JP2004224692A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2004016598A 2003-01-24 2004-01-26 結晶成長方法 Pending JP2004224692A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44219403P 2003-01-24 2003-01-24

Publications (2)

Publication Number Publication Date
JP2004224692A true JP2004224692A (ja) 2004-08-12
JP2004224692A5 JP2004224692A5 (enExample) 2007-03-01

Family

ID=32655736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004016598A Pending JP2004224692A (ja) 2003-01-24 2004-01-26 結晶成長方法

Country Status (3)

Country Link
US (1) US7033433B2 (enExample)
JP (1) JP2004224692A (enExample)
DE (1) DE102004003831A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005239542A (ja) * 2004-02-23 2005-09-08 Schott Ag 減じられた応力複屈折及びより均質な屈折率をもつ低応力大容積の非（１１１）配向結晶の製造方法及び同方法により製造される結晶
JP2005239540A (ja) * 2004-02-23 2005-09-08 Schott Ag 減じられた応力複屈折性及び均質な屈折率をもつ低応力大容積結晶の製造方法、及び同方法により製造される結晶
JP2005239543A (ja) * 2004-02-23 2005-09-08 Schott Ag （１００）結晶軸あるいは（１１０）結晶軸に平行な光学軸を備えた光学素子用の大容積ＣａＦ２単結晶を製造する方法及びそれにより製造されたＣａＦ２単結晶

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040099205A1 (en) * 2002-09-03 2004-05-27 Qiao Li Method of growing oriented calcium fluoride single crystals
DE102004008749A1 (de) * 2004-02-23 2005-09-08 Schott Ag Verfahren zur Herstellung eines großvolumigen CaF2-Einkristalles mit geringer Streuung und verbesserter Laserstabilität, sowie ein solcher Kristall und dessen Verwendung
US20060201412A1 (en) * 2005-03-08 2006-09-14 Christian Poetisch Method of making highly uniform low-stress single crystals with reduced scattering
DE102005010654A1 (de) * 2005-03-08 2006-09-14 Schott Ag Verfahren zur Herstellung von hochhomogenen, spannungsarmen Einkristallen mit geringer Streuung
CA2636033A1 (en) * 2006-01-20 2007-07-26 Bp Corporation North America Inc. Methods and apparatuses for manufacturing geometric multi-crystalline cast silicon and geometric multi-crystalline cast silicon bodies for photovoltaics
US8252208B2 (en) 2008-10-31 2012-08-28 Corning Incorporated Calcium fluoride optics with improved laser durability
RU2400573C1 (ru) * 2009-03-16 2010-09-27 Закрытое акционерное общество (ЗАО) "ИНКРОМ" Способ изготовления монокристаллов фторидов кальция и бария
US8986572B2 (en) 2009-10-21 2015-03-24 Corning Incorporated Calcium fluoride optics with improved laser durability
EP2610373A4 (en) 2010-07-22 2013-12-04 Nihon Kessho Kogaku Co Ltd FLUORIT
CN106435730A (zh) * 2016-09-08 2017-02-22 中国科学院上海光学精密机械研究所 多坩埚下降法制备氟化镁晶体的生长设备及其生长方法
CN115896922B (zh) * 2023-02-16 2023-05-16 杭州天桴光电技术有限公司 一种大尺寸氟化钙单晶生长与在位退火的装置
CN119292384B (zh) * 2024-12-10 2025-05-30 江西联创光电超导应用有限公司 一种晶体生长过程热量管理优化方法及系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10010484A1 (de) * 2000-03-03 2001-09-13 Schott Glas Verfahren und Vorrichtung zur Züchtung von großvolumigen orientierten Einkristallen
US6332922B1 (en) * 1998-02-26 2001-12-25 Nikon Corporation Manufacturing method for calcium fluoride and calcium fluoride for photolithography
JP2000081367A (ja) * 1998-09-07 2000-03-21 Nikon Corp 光透過性光学部材、その製造方法、その評価方法、および光リソグラフィー装置
US6377332B1 (en) * 1999-02-03 2002-04-23 Nikon Corporation Optical member for photolithography and photolithography apparatus
US6350310B1 (en) * 1999-06-07 2002-02-26 Sandia Corporation Crystal growth and annealing for minimized residual stress
US6620347B1 (en) * 1999-10-06 2003-09-16 Coherent, Inc. Crystalline filters for ultraviolet light sensors
FR2806743B1 (fr) * 2000-03-24 2002-06-28 Corning Inc PROCEDE ET DISPOSITIF DE CROISSANCE DE MONOCRISTAUX, NOTAMMENT DE CaF2
WO2002031232A1 (en) * 2000-10-13 2002-04-18 Corning Incorporated Method and device for producing optical fluoride crystals
US6850371B2 (en) * 2001-03-15 2005-02-01 Nikon Corporation Optical member and method of producing the same, and projection aligner
RU2001111056A (ru) * 2001-04-16 2003-04-10 Репкина Тать на Александровна Способ выращивания монокристаллов фторида кальция
US20040099205A1 (en) * 2002-09-03 2004-05-27 Qiao Li Method of growing oriented calcium fluoride single crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005239542A (ja) * 2004-02-23 2005-09-08 Schott Ag 減じられた応力複屈折及びより均質な屈折率をもつ低応力大容積の非（１１１）配向結晶の製造方法及び同方法により製造される結晶
JP2005239540A (ja) * 2004-02-23 2005-09-08 Schott Ag 減じられた応力複屈折性及び均質な屈折率をもつ低応力大容積結晶の製造方法、及び同方法により製造される結晶
JP2005239543A (ja) * 2004-02-23 2005-09-08 Schott Ag （１００）結晶軸あるいは（１１０）結晶軸に平行な光学軸を備えた光学素子用の大容積ＣａＦ２単結晶を製造する方法及びそれにより製造されたＣａＦ２単結晶

Also Published As

Publication number Publication date
US7033433B2 (en) 2006-04-25
DE102004003831A1 (de) 2004-07-29
US20040154527A1 (en) 2004-08-12

Similar Documents

Publication Publication Date Title
JP2004224692A (ja) 結晶成長方法
US6309461B1 (en) Crystal growth and annealing method and apparatus
JP2004262742A (ja) 配向された弗化カルシウム単結晶を成長させる方法
JP2004511409A (ja) 光学フッ化物結晶を生産する方法及び装置
US20120057222A1 (en) Single crystal of magnesium fluoride, optical member and optical element comprising the same
US6350310B1 (en) Crystal growth and annealing for minimized residual stress
US6736893B2 (en) Process for growing calcium fluoride monocrystals
JP2005503313A (ja) フォトリソグラフィ用ｕｖ光透過フッ化物結晶
JP2005239543A (ja) （１００）結晶軸あるいは（１１０）結晶軸に平行な光学軸を備えた光学素子用の大容積ＣａＦ２単結晶を製造する方法及びそれにより製造されたＣａＦ２単結晶
JP4017863B2 (ja) アニール炉及び光学用合成石英ガラスの製造方法
JP4839205B2 (ja) 蛍石の製造方法
JP2004339053A (ja) 光学フッ化物結晶を製造する方法
JP2004131368A (ja) 光学リソグラフィ用フッ化物結晶のアニール炉
JPH11240787A (ja) 蛍石の製造方法及び光リソグラフィー用の蛍石
JP2005001933A (ja) 金属フッ化物体とその製造方法
TW200303941A (en) Dispersion management optical lithography crystals for below 160nm optical lithography & method thereof
JP4839204B2 (ja) 蛍石
JP2007161565A (ja) フッ化物単結晶の熱処理方法及びフッ化物単結晶
JP2001335398A (ja) 光リソグラフィ用大口径蛍石単結晶およびその製造方法
JP3698848B2 (ja) 蛍石単結晶の熱処理装置および熱処理方法
Mouchovski et al. Laser grade CaF2 with controllable properties: growing conditions and structural imperfection
RU2421552C1 (ru) Способ отжига кристаллов фторидов металлов группы iia
Hatanaka et al. Properties of ultra-large CaF2 crystals for the high NA optics
JP2007261942A (ja) 光学用合成石英ガラス
JPH07247132A (ja) 石英ガラスの製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070112

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100209

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100706