JP2004207444A5 - - Google Patents

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Publication number
JP2004207444A5
JP2004207444A5 JP2002373882A JP2002373882A JP2004207444A5 JP 2004207444 A5 JP2004207444 A5 JP 2004207444A5 JP 2002373882 A JP2002373882 A JP 2002373882A JP 2002373882 A JP2002373882 A JP 2002373882A JP 2004207444 A5 JP2004207444 A5 JP 2004207444A5
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JP
Japan
Prior art keywords
semiconductor device
semiconductor
thin film
substrate
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002373882A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004207444A (ja
JP3813123B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2002373882A priority Critical patent/JP3813123B2/ja
Priority claimed from JP2002373882A external-priority patent/JP3813123B2/ja
Priority to US10/734,676 priority patent/US7122834B2/en
Publication of JP2004207444A publication Critical patent/JP2004207444A/ja
Publication of JP2004207444A5 publication Critical patent/JP2004207444A5/ja
Application granted granted Critical
Publication of JP3813123B2 publication Critical patent/JP3813123B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002373882A 2002-12-25 2002-12-25 半導体装置及びｌｅｄヘッド Expired - Fee Related JP3813123B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002373882A JP3813123B2 (ja) 2002-12-25 2002-12-25 半導体装置及びｌｅｄヘッド
US10/734,676 US7122834B2 (en) 2002-12-25 2003-12-15 Semiconductor apparatus having adhesion layer and semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002373882A JP3813123B2 (ja) 2002-12-25 2002-12-25 半導体装置及びｌｅｄヘッド

Publications (3)

Publication Number Publication Date
JP2004207444A JP2004207444A (ja) 2004-07-22
JP2004207444A5 true JP2004207444A5 (cg-RX-API-DMAC7.html) 2005-07-28
JP3813123B2 JP3813123B2 (ja) 2006-08-23

Family

ID=32677274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002373882A Expired - Fee Related JP3813123B2 (ja) 2002-12-25 2002-12-25 半導体装置及びｌｅｄヘッド

Country Status (2)

Country Link
US (1) US7122834B2 (cg-RX-API-DMAC7.html)
JP (1) JP3813123B2 (cg-RX-API-DMAC7.html)

Families Citing this family (30)

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JP2004047691A (ja) * 2002-07-11 2004-02-12 Seiko Epson Corp 半導体装置の製造方法、電気光学装置、及び電子機器
JP4601464B2 (ja) * 2005-03-10 2010-12-22 株式会社沖データ 半導体装置、プリントヘッド、及びそれを用いた画像形成装置
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4817774B2 (ja) 2005-09-14 2011-11-16 株式会社沖データ 半導体複合装置光プリントヘッドおよび画像形成装置
DE102006015606A1 (de) * 2006-04-04 2007-10-18 Noctron Holding S.A. Halbleiter-Leuchtmittel und Leuchtpaneel mit solchen
JP4302720B2 (ja) * 2006-06-28 2009-07-29 株式会社沖データ 半導体装置、ｌｅｄヘッド及び画像形成装置
JP2008235318A (ja) * 2007-03-16 2008-10-02 Oki Data Corp 窒化物半導体ウェハ及び薄膜半導体装置の製造方法
CN101690403A (zh) * 2007-07-04 2010-03-31 旭硝子欧洲平板玻璃股份有限公司 玻璃产品
JP2010045230A (ja) 2008-08-13 2010-02-25 Fuji Xerox Co Ltd 発光素子チップ、露光装置および画像形成装置
US8134585B2 (en) * 2008-12-18 2012-03-13 Fuji Xerox Co., Ltd. Light-emitting element head, image forming apparatus and light-emission control method
JP2011054760A (ja) * 2009-09-02 2011-03-17 Oki Data Corp 半導体複合装置、この製造方法、光プリントヘッド及び画像形成装置
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US9646869B2 (en) * 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
WO2013025748A1 (en) * 2011-08-15 2013-02-21 King Abdullah University Of Science And Technology Method for producing mechanically flexible silicon substrate
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
JP5510469B2 (ja) * 2012-01-20 2014-06-04 富士ゼロックス株式会社 論理演算回路、発光素子チップ、露光装置および画像形成装置
EP2850667B1 (en) * 2012-07-31 2017-10-25 Hewlett-Packard Development Company, L.P. Thin film stack
US9881962B2 (en) * 2013-12-10 2018-01-30 Sony Corporation Semiconductor apparatus, solid state imaging device, imaging apparatus and electronic equipment, and manufacturing method thereof
JP2015126189A (ja) * 2013-12-27 2015-07-06 株式会社沖データ 半導体装置、半導体装置の製造方法、光プリントヘッド及び画像形成装置
CN103791439B (zh) * 2014-01-27 2015-05-06 上海三思电子工程有限公司 新型led照明装置
CN113991003B (zh) 2015-12-01 2025-05-06 夏普株式会社 图像形成元件及其制造方法
JP6740374B2 (ja) 2016-12-22 2020-08-12 シャープ株式会社 表示装置および製造方法
CN107293627A (zh) * 2017-07-25 2017-10-24 中国南玻集团股份有限公司 一种阻隔膜及其制备方法
JP6431631B1 (ja) 2018-02-28 2018-11-28 株式会社フィルネックス 半導体素子の製造方法
WO2020121649A1 (ja) 2018-12-10 2020-06-18 株式会社フィルネックス 半導体基板、半導体基板の製造方法及び半導体素子の製造方法

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Publication number Priority date Publication date Assignee Title
US5211761A (en) * 1990-06-29 1993-05-18 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method thereof
US5081513A (en) * 1991-02-28 1992-01-14 Xerox Corporation Electronic device with recovery layer proximate to active layer
JPH1063807A (ja) 1996-08-23 1998-03-06 Hitachi Ltd カード型情報制御装置
DE69836216T2 (de) * 1997-12-09 2007-08-30 Seiko Epson Corp. Herstellungsverfahren einer elektrooptischen Vorrichtung
JP2001056403A (ja) * 1999-06-10 2001-02-27 Canon Inc ロッドレンズアレイ及びそれを用いた画像形成装置
JP2001111109A (ja) * 1999-10-07 2001-04-20 Sharp Corp 窒化ガリウム系化合物半導体発光素子
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
US6429070B1 (en) * 2000-08-30 2002-08-06 Micron Technology, Inc. DRAM cell constructions, and methods of forming DRAM cells

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