JP2004186735A - 半導体素子用バイアス回路 - Google Patents
半導体素子用バイアス回路 Download PDFInfo
- Publication number
- JP2004186735A JP2004186735A JP2002347827A JP2002347827A JP2004186735A JP 2004186735 A JP2004186735 A JP 2004186735A JP 2002347827 A JP2002347827 A JP 2002347827A JP 2002347827 A JP2002347827 A JP 2002347827A JP 2004186735 A JP2004186735 A JP 2004186735A
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- Prior art keywords
- circuit
- bias
- terminal
- voltage
- power supply
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 230000005669 field effect Effects 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002347827A JP2004186735A (ja) | 2002-11-29 | 2002-11-29 | 半導体素子用バイアス回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002347827A JP2004186735A (ja) | 2002-11-29 | 2002-11-29 | 半導体素子用バイアス回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004186735A true JP2004186735A (ja) | 2004-07-02 |
JP2004186735A5 JP2004186735A5 (enrdf_load_stackoverflow) | 2005-09-02 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002347827A Pending JP2004186735A (ja) | 2002-11-29 | 2002-11-29 | 半導体素子用バイアス回路 |
Country Status (1)
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JP (1) | JP2004186735A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7262668B2 (en) | 2004-06-10 | 2007-08-28 | Kabushiki Kaisha Toshiba | Semiconductor amplifier |
JP2015061205A (ja) * | 2013-09-19 | 2015-03-30 | 三菱電機株式会社 | 増幅器 |
WO2020001522A1 (zh) * | 2018-06-29 | 2020-01-02 | 南京中兴新软件有限责任公司 | 一种放大器偏置电压保护电路及电子设备 |
CN110838825A (zh) * | 2019-11-27 | 2020-02-25 | 珠海复旦创新研究院 | 一种cmos功放的过压保护电路及过压保护方法 |
-
2002
- 2002-11-29 JP JP2002347827A patent/JP2004186735A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7262668B2 (en) | 2004-06-10 | 2007-08-28 | Kabushiki Kaisha Toshiba | Semiconductor amplifier |
US7423491B2 (en) | 2004-06-10 | 2008-09-09 | Kabushiki Kaisha Toshiba | Semiconductor amplifier |
JP2015061205A (ja) * | 2013-09-19 | 2015-03-30 | 三菱電機株式会社 | 増幅器 |
WO2020001522A1 (zh) * | 2018-06-29 | 2020-01-02 | 南京中兴新软件有限责任公司 | 一种放大器偏置电压保护电路及电子设备 |
CN110661496A (zh) * | 2018-06-29 | 2020-01-07 | 中兴通讯股份有限公司 | 一种放大器偏置电压保护电路及电子设备 |
CN110838825A (zh) * | 2019-11-27 | 2020-02-25 | 珠海复旦创新研究院 | 一种cmos功放的过压保护电路及过压保护方法 |
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