JP2004179583A5 - - Google Patents
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- Publication number
- JP2004179583A5 JP2004179583A5 JP2002346928A JP2002346928A JP2004179583A5 JP 2004179583 A5 JP2004179583 A5 JP 2004179583A5 JP 2002346928 A JP2002346928 A JP 2002346928A JP 2002346928 A JP2002346928 A JP 2002346928A JP 2004179583 A5 JP2004179583 A5 JP 2004179583A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- etching
- film
- manufacturing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000000243 solution Substances 0.000 claims 3
- 239000007864 aqueous solution Substances 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- -1 fluorine ions Chemical class 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002346928A JP3974028B2 (ja) | 2002-11-29 | 2002-11-29 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002346928A JP3974028B2 (ja) | 2002-11-29 | 2002-11-29 | 半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007079440A Division JP2007184639A (ja) | 2007-03-26 | 2007-03-26 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004179583A JP2004179583A (ja) | 2004-06-24 |
| JP2004179583A5 true JP2004179583A5 (enExample) | 2005-11-04 |
| JP3974028B2 JP3974028B2 (ja) | 2007-09-12 |
Family
ID=32707671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002346928A Expired - Fee Related JP3974028B2 (ja) | 2002-11-29 | 2002-11-29 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3974028B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4542869B2 (ja) | 2004-10-19 | 2010-09-15 | 東京エレクトロン株式会社 | 処理方法およびその処理方法を実施するコンピュータプログラム |
| US7902082B2 (en) * | 2007-09-20 | 2011-03-08 | Samsung Electronics Co., Ltd. | Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers |
| JP7250566B2 (ja) | 2019-02-26 | 2023-04-03 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| CN114256130A (zh) * | 2020-09-21 | 2022-03-29 | 中国科学院微电子研究所 | 一种形成浅沟槽隔离的方法 |
| JP7656569B2 (ja) * | 2022-05-17 | 2025-04-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
-
2002
- 2002-11-29 JP JP2002346928A patent/JP3974028B2/ja not_active Expired - Fee Related
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