JP3974028B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3974028B2
JP3974028B2 JP2002346928A JP2002346928A JP3974028B2 JP 3974028 B2 JP3974028 B2 JP 3974028B2 JP 2002346928 A JP2002346928 A JP 2002346928A JP 2002346928 A JP2002346928 A JP 2002346928A JP 3974028 B2 JP3974028 B2 JP 3974028B2
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Prior art keywords
etching
film
insulating film
sin
semiconductor device
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Expired - Fee Related
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JP2002346928A
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Japanese (ja)
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JP2004179583A (ja
JP2004179583A5 (enExample
Inventor
真美 齋藤
基之 佐藤
寿史 大口
義宏 小川
寛 冨田
浩 川本
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Toshiba Corp
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Toshiba Corp
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Publication of JP2004179583A5 publication Critical patent/JP2004179583A5/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002346928A 2002-11-29 2002-11-29 半導体装置の製造方法 Expired - Fee Related JP3974028B2 (ja)

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JP2002346928A JP3974028B2 (ja) 2002-11-29 2002-11-29 半導体装置の製造方法

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JP2002346928A JP3974028B2 (ja) 2002-11-29 2002-11-29 半導体装置の製造方法

Related Child Applications (1)

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JP2007079440A Division JP2007184639A (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

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JP2004179583A JP2004179583A (ja) 2004-06-24
JP2004179583A5 JP2004179583A5 (enExample) 2005-11-04
JP3974028B2 true JP3974028B2 (ja) 2007-09-12

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JP2002346928A Expired - Fee Related JP3974028B2 (ja) 2002-11-29 2002-11-29 半導体装置の製造方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4542869B2 (ja) 2004-10-19 2010-09-15 東京エレクトロン株式会社 処理方法およびその処理方法を実施するコンピュータプログラム
US7902082B2 (en) * 2007-09-20 2011-03-08 Samsung Electronics Co., Ltd. Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers
JP7250566B2 (ja) 2019-02-26 2023-04-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN114256130A (zh) * 2020-09-21 2022-03-29 中国科学院微电子研究所 一种形成浅沟槽隔离的方法
JP7656569B2 (ja) * 2022-05-17 2025-04-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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