JP2004165677A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2004165677A JP2004165677A JP2003409386A JP2003409386A JP2004165677A JP 2004165677 A JP2004165677 A JP 2004165677A JP 2003409386 A JP2003409386 A JP 2003409386A JP 2003409386 A JP2003409386 A JP 2003409386A JP 2004165677 A JP2004165677 A JP 2004165677A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor device
- peltier effect
- effect element
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Electrodes Of Semiconductors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】 リードフレーム1上に熱伝導性の高い絶縁膜3が形成され、この絶縁膜3上にペルチェ効果素子5が形成され、このペルチェ効果素子5の上に更に熱伝導性の高い絶縁膜4が形成されて、この上にLSIチップ6が搭載される。
【選択図】 図1
Description
Claims (4)
- リードフレーム上に薄膜からなる絶縁膜が形成され、この絶縁膜上にペルチェ効果素子を介して半導体素子チップが搭載されていることを特徴とする半導体装置であって、
前記ペルチェ効果素子は、
前記絶縁膜上にパターン形成された下部電極と、
前記下部電極上に形成され選択エッチングにより設けられた前記下部電極に達する孔を有する電極間絶縁膜と、
前記孔にのみ残された熱電半導体材料膜と、
前記電極間絶縁膜及び前記熱電半導体材料膜上にパターン形成された上部電極と
を備えたことを特徴とする半導体装置。 - 前記熱電半導体材料膜はBi2Te3系材料である請求項1記載の半導体装置。
- 電気熱電半導体材料膜は高周波スパッタ法により堆積されたものである請求項1又は2記載の半導体装置。
- 前記半導体チップから発生した熱が、前記ペルチェ効果素子、前記絶縁膜及び前記リードフレームに伝わった後放散されるよう構成された請求項1乃至3いずれか1項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003409386A JP4001104B2 (ja) | 1994-06-20 | 2003-12-08 | 半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16058494 | 1994-06-20 | ||
JP2003409386A JP4001104B2 (ja) | 1994-06-20 | 2003-12-08 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1975095A Division JP3521521B2 (ja) | 1994-06-20 | 1995-01-12 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004165677A true JP2004165677A (ja) | 2004-06-10 |
JP4001104B2 JP4001104B2 (ja) | 2007-10-31 |
Family
ID=32827193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003409386A Expired - Fee Related JP4001104B2 (ja) | 1994-06-20 | 2003-12-08 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4001104B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100759015B1 (ko) | 2006-05-30 | 2007-09-17 | 서울반도체 주식회사 | 방열 기판과 이를 포함하는 발광 소자 |
CN100365844C (zh) * | 2004-08-10 | 2008-01-30 | 浙江大学 | 基于珀耳帕热循环原理的聚合物微芯片热键合封装方法 |
JP2008526035A (ja) * | 2004-12-27 | 2008-07-17 | インテル・コーポレーション | 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 |
JP2011508411A (ja) * | 2007-12-17 | 2011-03-10 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 光起電力変換器と、光起電力変換器の支持基板内に含まれる熱電変換器とを備えるエネルギー生成デバイス |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101343049B1 (ko) | 2010-06-10 | 2013-12-18 | 에스티에스반도체통신 주식회사 | 방열 기능을 가지는 반도체 패키지 |
-
2003
- 2003-12-08 JP JP2003409386A patent/JP4001104B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100365844C (zh) * | 2004-08-10 | 2008-01-30 | 浙江大学 | 基于珀耳帕热循环原理的聚合物微芯片热键合封装方法 |
JP2008526035A (ja) * | 2004-12-27 | 2008-07-17 | インテル・コーポレーション | 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 |
JP4922947B2 (ja) * | 2004-12-27 | 2012-04-25 | インテル・コーポレーション | 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 |
JP2012099836A (ja) * | 2004-12-27 | 2012-05-24 | Intel Corp | 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 |
US8686277B2 (en) | 2004-12-27 | 2014-04-01 | Intel Corporation | Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same |
KR100759015B1 (ko) | 2006-05-30 | 2007-09-17 | 서울반도체 주식회사 | 방열 기판과 이를 포함하는 발광 소자 |
JP2011508411A (ja) * | 2007-12-17 | 2011-03-10 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 光起電力変換器と、光起電力変換器の支持基板内に含まれる熱電変換器とを備えるエネルギー生成デバイス |
Also Published As
Publication number | Publication date |
---|---|
JP4001104B2 (ja) | 2007-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4416376B2 (ja) | 半導体装置及びその製造方法 | |
US3872496A (en) | High frequency diode having simultaneously formed high strength bonds with respect to a diamond heat sink and said diode | |
EP1154476B1 (en) | Substrate for element-mounted device | |
JP3948377B2 (ja) | 圧接型半導体装置 | |
CN107534019B (zh) | 具有金刚石和金属或含金属合金的交替图案的复合衬底 | |
JPH0778908A (ja) | 改良された放熱能力を有する基板構造の製造方法 | |
JP3144377B2 (ja) | 半導体装置の製造方法 | |
TWI416675B (zh) | 具有增加熱傳導之積體電路 | |
JPH09260539A (ja) | サブマウント装置および半導体装置ならびにそれらの製造方法 | |
JP2614868B2 (ja) | 電界効果トランジスタの製造法 | |
JP4001104B2 (ja) | 半導体装置 | |
US5695670A (en) | Diamond heater | |
JP3521521B2 (ja) | 半導体装置の製造方法 | |
US3071854A (en) | Method of producing a broad area low resistance contact to a silicon semiconductor body | |
TWI638435B (zh) | 半導體裝置 | |
JP2018174195A (ja) | 放熱体、放熱体の製造方法、及び電子装置 | |
JP2915433B2 (ja) | 半導体集積回路装置 | |
JP2007012897A (ja) | 半導体装置およびその製造方法 | |
JP2003163409A (ja) | 半導体レーザーモジュール | |
JP7009800B2 (ja) | 電子装置の製造方法 | |
JPH06252300A (ja) | 冷却装置を備えた集積回路チップ及びその製造方法 | |
JPH1032213A (ja) | 半導体素子 | |
JP2002100773A (ja) | 半導体装置及びその製造方法 | |
JP2001217333A (ja) | 気密封止型半導体パッケージ | |
JPH09266215A (ja) | 高周波高出力用半導体デバイスおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070312 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070724 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070806 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100824 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100824 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110824 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120824 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130824 Year of fee payment: 6 |
|
LAPS | Cancellation because of no payment of annual fees |